VBsemi-Elec-IRLI540GPBF-VB
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IRLI540GPBF
N-Channel 100-V (D-S)
MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
•
TrenchFET
®
Power MOSFET
175 °C Junction Temperature
Low Thermal Resistance Package
100 % R
g
Tested
V
(BR)DSS
(V)
r
DS(on)
(
Ω
)
I
D
(A)
50
a
RoHS
0.034 at V
GS
= 10 V
100
COMPLIANT
APPLICATIONS
•
Isolated DC/DC Converters
D
TO-220 FULLPAK
G
S
S
D
G
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
C
Parameter
Symbol
Limit
100
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
± 20
50
a
T
C
= 25 °C
Continuous Drain Current (T
J
= 175 °C)
I
D
28
a
120
31
T
C
= 125 °C
A
I
DM
I
AS
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy
b
L = 0.1 mH
E
AS
61
mJ
W
360
c
3.70
T
C
= 25 °C
T
A
= 25 °C
d
Maximum Power Dissipation
b
P
D
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
40
Unit
PCB Mount (TO-263)
d
R
thJA
Junction-to-Ambient
°C/W
R
thJC
Junction-to-Case (Drain)
0.4
Notes:
a. Package limited.
b. Duty cycle
≤
1 %.
c. See SOA curve for voltage derating.
d. When Mounted on 1″ square PCB (FR-4 material).
服务热线：400-655-8788
1
IRLI540GPBF
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
(BR)DSS
V
GS(th)
I
GSS
V
DS
= 0
V
,
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
Drain-Source Breakdown Voltage
100
1.5
V
Gate-Threshold Voltage
Gate-Body Leakage
2.5
± 100
1
V
DS
= 0
V
,
V
GS
= ± 20 V
nA
V
DS
= 100
V
,
V
GS
= 0 V
I
DSS
I
D(on)
r
DS(on)
g
fs
V
DS
= 100
V
,
V
GS
= 0
V
,
T
J
= 125 °C
Zero Gate Voltage Drain Current
On-State Drain Current
a
50
µA
A
V
DS
= 100
V
,
V
GS
= 0
V
,
T
J
= 175 °C
V
DS
≥
5
V
,
V
GS
= 10 V
250
120
25
V
GS
= 10
V
,
I
D
= 30 A
0.034
0.063
0.084
Drain-Source On-State Resistance
a
V
GS
= 10
V
,
I
D
= 30 A, T
J
= 125 °C
Ω
S
V
GS
= 10
V
,
I
D
= 30 A, T
J
= 175 °C
V
DS
= 15
V
,
I
D
= 30 A
Forward
T
r
ansconductance
a
Dynamic
b
C
iss
C
oss
C
rss
Q
g
Input Capacitance
5100
480
210
90
V
GS
= 0
V
,
V
DS
= 25
V
, f = 1
M
Hz
V
DS
= 100
V
,
V
GS
= 10
V
,
I
D
= 65 A
Output Capacitance
Reverse
T
r
ansfer Capacitance
pF
T
o
tal Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
T
u
rn-On Delay Time
c
Rise Time
c
130
Q
gs
Q
gd
R
g
23
nC
34
0.5
1.7
24
3.3
35
Ω
t
d(on)
t
r
t
d(off)
t
f
220
45
330
70
V
DD
= 100
V
,
R
L
= 1.5
Ω
ns
T
u
rn-Off Delay Time
c
Fall Time
c
I
D
≅
65 A, V
GEN
= 10
V
,
R
g
= 2.5
Ω
200
300
Source-Drain Diode Ratings and Characteristics
T
C
= 25 °C
b
I
S
I
SM
Continuous Current
50
120
1.0
130
8
A
Pulsed Current
Forward Voltage
a
V
SD
t
rr
I
F
= 65 A, V
GS
= 0 V
1.5
200
12
V
ns
A
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
RM(REC)
Q
rr
I
F
= 50 A, di/dt = 100 A/µs
0.52
1.2
µC
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
服务热线：400-655-8788
2
IRLI540GPBF
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
140
140
120
100
80
V
GS
= 10 thru 5 V
4 V
120
100
80
60
40
20
0
60
T
= 125 °C
40
C
3V
25 °C
3
20
2 V
– 55 °C
0
0
2
4
6
8
10
0
1
2
4
5
6
7
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
180
150
120
90
0.060
0.045
0.030
0.015
0.000
T
= – 55 °C
25 °C
C
V
GS
= 10 V
125 °C
60
30
0
0
20
40
I
60
80
100
120
0
20
40
60
80
100
120
– Drain Current (A)
I
D
– Drain Current (A)
D
Transconductance
On-Resistance vs. Drain Current
7000
6000
5000
4000
3000
2000
1000
0
20
16
12
8
V
= 100 V
= 50A
DS
I
D
C
iss
4
C
rss
C
oss
0
0
25
50
75
100
125
150
125
150
0
25
50
75
100
V
DS
– Drain-to-Source Voltage (V)
Q
– Total Gate Charge (nC)
g
Capacitance
Gate Charge
服务热线：400-655-8788
3
IRLI540GPBF
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
3.0
100
10
1
V
= 10 V
= 30 A
GS
I
D
2.5
2.0
1.5
1.0
0.5
0.0
T =
150 °C
J
T =
25 °C
J
– 50
– 25
0
25
50
75 100
125 150 175
0
0.3
0.6
0.9
1.2
T –
Junction Temperature
(
°
C)
J
V
SD
– Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1000
100
240
230
220
210
200
190
180
I
D
= 1.0 mA
I
(A) at T
= 25 °C
A
AV
10
1
I
AV
(A) at T
= 150 °C
A
0.1
– 50
– 25
0
25
50
75 100
125 150 175
0.00001
0.0001
0.001
0.01
0.1
1
t
in
(s)
T –
Junction Temperature (°C)
J
Drain Source Breakdown
vs. Junction Temperature
Avalanche Current vs. Time
服务热线：400-655-8788
4
IRLI540GPBF
THERMAL RATINGS
1000
75
r
DS(on)
Limited*
60
45
30
15
0
10 µs
100
10
100 µs
1 ms
10 ms
100 ms
DC
1
T
= 25 °C
C
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
1000
V
DS
– Drain-to-Source Voltage (V)
T
– Ambient Temperature
(
°
C)
C
* V
>
minimum V
at which r
is specified
GS
GS
DS(on)
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–
4
–
3
10
–
2
10
–
1
10
10
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
服务热线：400-655-8788
5
IRLI540GPBF
TO-220 FULLPAK (HIGH VOLTAGE)
A
E
A1
Ø P
n
d1
d3
D
u
L1
V
L
b
3
A2
b
2
c
b
e
MILLIMETERS
INCHES
DIM.
A
MIN.
4.570
2.570
2.510
0.622
1.229
1.229
0.440
8.650
15.88
12.300
10.360
MAX.
4.830
2.830
2.850
0.890
1.400
1.400
0.629
9.800
16.120
12.920
10.630
MIN.
0.180
0.101
0.099
0.024
0.048
0.048
0.017
0.341
0.622
0.484
0.408
MAX.
0.190
0.111
0.112
0.035
0.055
0.055
0.025
0.386
0.635
0.509
0.419
A1
A2
b
b2
b3
c
D
d1
d3
E
e
2.54 BSC
0.100 BSC
L
13.200
3.100
6.050
3.050
2.400
0.400
13.730
3.500
6.150
3.450
2.500
0.500
0.520
0.122
0.238
0.120
0.094
0.016
0.541
0.138
0.242
0.136
0.098
0.020
L1
n
Ø P
u
v
ECN: X09-0126-Rev. B, 26-Oct-09
DWG: 5972
Notes
1. To be used only for process drawing.
2. These dimensions apply to all TO-220, FULLPAK leadframe versions 3 leads.
3. All critical dimensions should C meet C
pk
> 1.33.
4. All dimensions include burrs and plating thickness.
5. No chipping or package damage.
服务热线：400-655-8788
6
IRLI540GPBF
Disclaimer
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aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
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any goods or continuous production.
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t
he maximum extent permitted by applicable law on
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Statement on certain types of applications are based on knowledge of the product is often used in a typical
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aiwan demand that the Taiwan VBsemi of. Statement on whether the
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product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
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aiwan
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