VBsemi-Elec-IRLML0100TRPBF-VB
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IRLML0100TRPBF
N-Channel 100 V (D-S) MOSFET
FEATURES
MOSFET PRODUCT SUMMARY
•
•
•
•
TrenchFET
®
Power MOSFET
I
D
(A)
a
V
DS
(V)
R
DS(on)
(
)
Q
g
(Typ.)
100 % R
Tested
100 % UIS Tested
Material categorization:
g
0.
240
at V
GS
= 10 V
0.
2
5
0
at V
GS
= 6 V
0.
2
6
0
at V
GS
= 4.5 V
2.0
100
1.8
2.9 nC
1.7
APPLICATIONS
•
•
•
DC/DC Converters
Load Switch
LED Backlighting in LCD TVs
G
S
1
2
3
D
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
100
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
± 20
2
T
C
= 25 °C
T
C
= 70 °C
A
= 25 °C
1.8
Continuous Drain Current (T
J
= 150 °C)
I
D
1.6
b, c
1.3
b, c
7
T
T
A
= 70 °C
A
I
DM
I
S
Pulsed Drain Current (t = 300 µs)
T
C
= 25 °C
A
= 25 °C
2.1
1.0
b, c
Continuous Source-Drain Diode Current
T
I
AS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
5
L = 0.1 mH
E
AS
mJ
W
1.25
2.5
T
C
= 25 °C
T
C
= 70 °C
1.6
P
D
Maximum Power Dissipation
1.25
b, c
0.8
b, c
– 55 to 150
T
A
= 25 °C
T
A
= 70 °C
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
R
thJA
Typical
75
Maximum
Unit
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
5 s
Steady State
100
50
°C/W
R
thJF
40
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1″ x 1″ FR4 board.
c. t
= 5 s.
d. Maximum
under steady state conditions is 166 °C/W.
服务热线：400-655-8788
1
IRLML0100TRPBF
MOSFET SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
V
DS
= 0
V
,
I
D
= 250 µA
I
D
= 250 µA
Drain-Source Breakdown Voltage
100
V
V
DS
T
e
mperature Coefficient
V
DS
/T
J
105
mV/°C
V
GS(th)
T
e
mperature Coefficient
V
/T
– 5.2
GS(th) J
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0
V
,
V
GS
= ± 20 V
V
DS
= 100
V
,
V
GS
= 0 V
DS
= 100
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
5
V
,
V
GS
= 4.5 V
Gate-Source Threshold Voltage
Gate-Source Leakage
1.2
2.8
± 100
– 1
V
nA
I
DSS
Zero Gate Voltage Drain Current
On-State Drain Current
a
µA
A
V
– 10
I
D(on)
5
V
GS
= 10
V
,
I
D
= 1.5 A
0.240
0.250
0.
2
6
0
2.0
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 6
V
,
I
D
= 1 A
V
GS
= 4.5
V
,
I
D
= 0.5 A
V
DS
= 20
V
,
I
D
= 1.5 A
Forward
T
r
ansconductance
a
g
fs
S
Dynamic
b
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
190
22
13
5.2
2.9
0.75
1.4
1.4
30
26
17
12
6
V
DS
= 50
V
,
V
GS
= 0
V
, f = 1
M
Hz
pF
V
DS
= 50
V
,
V
GS
= 10
V
,
I
D
= 1.6 A
10.4
5.8
Q
g
T
o
tal Gate Charge
nC
Q
gs
Q
gd
R
g
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
T
u
rn-On Delay Time
Rise Time
V
DS
= 50
V
,
V
GS
= 4.5
V
,
I
D
= 1.6 A
f = 1 MHz
0.3
2.8
45
39
26
20
12
20
20
12
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 50
V
,
R
L
= 39
I
D
= 1.3 A, V
GEN
= 4.5
V
,
R
g
= 1
T
u
rn-Off Delay Time
Fall Time
ns
T
u
rn-On Delay Time
Rise Time
10
10
6
V
DD
= 50
V
,
R
L
= 39
I
D
= 1.3 A, V
GEN
= 10
V
,
R
g
= 1
T
u
rn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
I
S
= 1.3 A
Continuous Source-Drain Diode Current
– 2.1
– 20
– 1.2
33
A
Pulse Diode Forward Current
a
Body Diode Voltage
– 0.8
22
21
16
6
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
32
I
F
= 1.3 A, dI/dt = 100 A/µs, T
J
= 25 °C
ns
t
b
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
IRLML0100TRPBF
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
5
3
2.4
1.8
1.2
0.6
0
V
GS
= 10 V thru 5 V
V
GS
= 4.5V
4
3
2
T
C
= 25
°
C
1
0
V
GS
= 3 V
T
C
= 125
°
C
T
C
= – 55
°
C
0
0.5
1
1.5
2
0
1
2
3
4
V
GS
– Gate-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
300
240
180
120
60
0.3
5
0
0.300
0
.
2
5
0
0
.
200
0
.1
50
V
GS
= 4.5 V
C
iss
V
GS
= 6 V
V
GS
= 10 V
C
oss
C
rss
0
0
1
2
3
4
5
0
20
40
60
80
100
V
DS
– Drain-to-Source Voltage (V)
I
D
– Drain Current (A)
Capacitance
On-Resistance vs. Drain Current and Gate Voltage
10
8
2.2
1.75
1.3
I
D
= 1.6 A
I
D
= 1.5 A
V
DS
= 25 V
V
GS
= 6 V
6
V
DS
= 50 V
4
V
DS
= 80 V
0.85
0.4
2
V
GS
= 10 V
0
0
– 50
– 25
25
50
75
100 125 150
0
1.5
3
4.5
6
T
J
– Junction Temperature (
°
C)
Q
g
– Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
Gate Charge
服务热线：400-655-8788
3
IRLML0100TRPBF
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
0.
4
0.3
0.2
I
D
= 1.5 A
T
J
= 150
°
C
T
J
= 125
°
C
1
T =
25
°
C
0.15
0
T
J
= 25
°
C
0.1
0.0
2
4
6
8
10
0.3
0.6
0.9
1.2
V
GS
– Gate-to-Source Voltage (V)
V
SD
– Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
2.8
2.5
2.2
1.9
1.6
10
8
6
I
D
= 250 μA
4
2
T =
25 °C
A
0
0.01
– 50
– 25
0
25
50
75
100 125 150
0.1
1
10
100
1000
T
J
– Temperature (
°
C)
Time (s)
Single Pulse Power
Threshold Voltage
10
Limited by R
DS(on)
*
100 μs
1
0.1
1 ms
10 ms
100 ms
1 s, 10 s
DC
0.01
T
A
= 25
°
C
Single Pulse
BVDSS Limited
0.001
0.1
1
10
100
1000
V
DS
– Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area
服务热线：400-655-8788
4
IRLML0100TRPBF
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
2.8
2.1
1.4
0.7
0.0
0
25
50
75
100
125
150
T
C
– Case Temperature (
°
C)
Current Derating*
3
2.4
1.8
1.2
0.6
0
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
A
– Ambient Temperature (
°
C)
T
C
– Case Temperature (
°
C)
Power, Junction-to-Ambient
Power, Junction-to-Foot
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
服务热线：400-655-8788
5
IRLML0100TRPBF
A
= 25 °C, unless otherwise noted)
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
N
otes:
P
DM
0.05
t
1
0.02
t
2
t
t
1
2
1. D
u
ty Cycle, D =
2. Per Unit Base = R
= 166 °C/
W
thJA
(t)
= P
Z
3. T
– T
A
DM thJA
JM
4. S
u
rface Mo
u
nted
Single P
u
lse
0.01
-4
-3
-2
-1
10
10
10
10
S
qu
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P
u
lse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
S
qu
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
No
t
e
•
The characteristics shown in the two graphs
– Normalized Transient Thermal Impedance Junction-to-Ambient
– Normalized Transient Thermal Impedance Junction-to-Foot
25
°
C
(
25
°C)
)
(
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the
part
mounted on printed circuit board – FR4, size 1″ x 1″ x 0.062″, double sided with 2 oz. copper, 100 % on both sides. The part ca
pab
ili
can widely vary depending on actual application parameters and operating
co
nditio
ns.
t
i
es
服务热线：400-655-8788
6
IRLML0100TRPBF
SOT-23 (TO-236): 3-LEAD
b
3
E
1
E
1
2
e
S
e
1
D
0.10 mm
0.004″
C
C
0.25 mm
q
A
2
A
G
au
ge Pl
a
ne
S
e
a
ting Pl
a
ne
S
e
a
ting Pl
a
ne
C
A
1
L
1
L
MILLIMETERS
INCHES
Dim
Min
0.89
0.01
Max
1.12
0.10
Min
0.0
3
5
0.0004
Max
0.044
0.004
A
A
1
A
2
0.88
0.
3
5
0.085
2.80
2.10
1.20
1.02
0.50
0.18
3
.04
2.64
1.40
0.0
3
46
0.014
0.00
3
0.110
0.08
3
0.047
0.040
0.020
0.007
0.120
0.104
0.055
b
c
D
E
E
1
e
0.95 BSC
1.90 BSC
0.0
3
74 Ref
e
1
0.0748 Ref
L
0.40
0.60
8°
0.016
0.024
8°
L
1
0.64 Ref
0.50 Ref
0.025 Ref
0.020 Ref
S
q
3
°
3
°
ECN: S-0
3
946-Rev. K, 09-Jul-01
DWG: 5479
服务热线：400-655-8788
7
IRLML0100TRPBF
RECOMMENDED MINIMUM
P
A
DS FOR SO
T
–
23
0.037
0.022
(0.950)
(0.559)
0.053
(1.341)
0.097
(2.459)
Recommended Minimum Pads
Dimensions in Inches/(mm)
服务热线：400-655-8788
8
IRLML0100TRPBF
Disclaimer
All products due to improve reliability, function or design or for other reasons, product specifications and
data are subject to change without notice.
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representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
product.(www.VBsemi.com)
Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of
any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
T
aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
including a particular purpose, non-infringement and merchantability guarantee.
Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
T
aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
Unless expressly stated in writing,
T
aiwan VBsemi products are not intended for use in medical, life saving,
or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal
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T
aiwan VBsemi such applications using client did not express their
own risk. Contact your authorized
T
aiwan VBsemi people who are related to product design applications and
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The information provided in this document and the company’s products without a license, express or implied,
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Material Category Policy
Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be
RoHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) – modification, unless otherwise specified as inconsistent.(www.VBsemi.com)
Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
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halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products
conform to confirm compliance with IEC 61249-2-21 standard level JS709A.
