VBsemi-Elec-IRLU2905ZPBF-VB
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IRLU2905ZPBF
N
-Channel 60 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
175 °C Junction Temperature
TrenchFET
®
Power MOSFET
I
D
(A)
a
55
V
DS
(V)
R
DS(on)
(
)
0.0
11
at V
GS
= 10 V
0.01
2
at V
GS
= 4.5 V
•
Material categorization:
60
47
TO-251
D
G
S
N-Channel MOSFET
G
D
S
Top View
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
C
Parameter
Symbol
Limit
± 20
55
Unit
V
GS
Gate-Source Voltage
V
T
C
= 25 °C
Continuous Drain Current (T
J
= 175 °C)
b
I
D
46
a
110
T
C
= 100 °C
I
DM
I
S
Pulsed Drain Current
A
50
a
50
Continuous Source Current (Diode Conduction)
Avalanche Current
I
AS
E
AS
Single Avalanche Energy (Duty Cycle
1 %)
L = 0.1 mH
T
C
= 25 °C
125
136
mJ
W
P
D
Maximum Power Dissipation
3
b
, 8.3
b, c
T
A
= 25 °C
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
10 sec
15
40
18
50
Maximum Junction-to-Ambient
a
R
thJA
Steady State
°C/W
R
thJC
Maximum Junction-to-Case
0.85
1.1
Notes:
a. Package limited.
b. Surface mounted on 1″ x 1″ FR4 board.
c. t
10 s.
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1
IRLU2905ZPBF
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Typ.
a
Parameter
Symbol
Test Conditions
Min.
Max.
Unit
Static
V
DS
V
GS(th)
I
GSS
V
GS
= 0
V
,
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
60
1
V
3
± 100
1
V
DS
= 0
V
,
V
GS
= ± 20 V
V
DS
= 60
V
,
V
GS
= 0 V
nA
I
DSS
V
DS
= 60
V
,
V
GS
= 0
V
,
T
J
= 125 °C
Zero Gate Voltage Drain Current
On-State Drain Current
b
50
µA
A
V
DS
= 60
V
,
V
GS
= 0
V
,
T
J
= 175 °C
V
DS
=
5
V
,
V
GS
= 10 V
250
I
D(on)
6
0
V
GS
= 10
V
,
I
D
= 20 A
0.0
10
0.013
0.017
0.01
2
60
V
GS
= 10
V
,
I
D
= 20 A, T
J
= 125 °C
GS
= 10
V
,
I
D
= 20 A, T
J
= 175 °C
GS
= 4.5
V
,
I
D
= 15 A
V
DS
= 15
V
,
I
D
= 20 A
Drain-Source On-State Resistance
b
R
DS(on)
V
V
Forward
T
r
ansconductance
b
g
fs
S
Dynamic
C
iss
C
oss
C
rss
Q
g
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
T
o
tal Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
T
u
rn-On Delay Time
c
Rise Time
c
3650
570
325
46
V
GS
= 0
V
,
V
DS
= 25
V
, f = 1
M
Hz
V
DS
= 30
V
,
V
GS
= 10
V
,
I
D
= 50 A
pF
nC
Q
gs
Q
gd
t
d(on)
t
r
10
12
10
20
25
50
30
15
V
DD
= 30
V
,
R
L
= 0.6
ns
T
u
rn-Off Delay Time
c
Fall Time
c
I
D
50 A, V
GEN
= 10
V
,
R
g
= 2.5
t
d(off)
t
f
35
20
Source-Drain Diode Ratings and Characteristics
(T
C
= 25 °C)
I
SM
V
SD
t
rr
A
V
Pulsed Current
6
0
1.5
100
I
F
= 20 A, V
GS
= 0 V
Diode Forward Voltage
Reverse Recovery Time
1
I
F
= 20 A, di/dt = 100 A/µs
45
ns
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width
300 µs, duty cycle
2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
IRLU2905ZPBF
TYPICAL CHARACTERISTICS
(25 °C unless noted)
100
80
60
40
20
0
100
V
= 10 thru 5 V
GS
80
60
40
20
0
4 V
T
= 125 °C
C
25 °C
2
2 V, 3 V
8
– 55 °C
0
1
3
4
5
0
2
4
6
10
V
GS
– Gate-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
120
100
80
60
40
20
0
0.020
0.016
0.012
0.008
0.004
0.000
T
= – 55 °C
25 °C
C
V
GS
= 4.5 V
V
GS
= 10 V
125 °C
0
20
40
60
80
100
0
10
20
30
40
50
I
– Drain Current (A)
I
D
– Drain Current (A)
D
Transconductance
On-Resistance vs. Drain Current
10
8
4800
4200
3600
3000
2400
1800
1200
600
V
= 30 V
= 50 A
DS
I
D
C
iss
6
4
2
C
oss
C
rss
0
0
0
10
20
30
40
50
0
10
20
30
40
50
60
V
DS
– Drain-to-Source Voltage (V)
Q
– Total Gate Charge (nC)
g
Capacitance
Gate Charge
服务热线：400-655-8788
3
IRLU2905ZPBF
TYPICAL CHARACTERISTICS
(25 °C unless noted)
100
10
1
2.5
V
= 10 V
= 20 A
GS
I
D
2.0
1.5
1.0
0.5
0.0
T
= 150 °C
J
T
= 25 °C
J
– 50
– 25
0
25
50
75 100
125 150 175
0.3
V
0.6
0.9
1.2
1.5
0
T
– Junction Temperature (°C)
– Source-to-Drain Voltage (V)
J
SD
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
服务热线：400-655-8788
4
IRLU2905ZPBF
THERMAL RATINGS
1000
100
60
Limited by
R
DS(on)
*
50
40
30
20
10
0
10 µs
100 µs
10
1
1 ms
10 ms
100 ms
DC
T
= 25 °C
C
0.1
Single Pulse
0.01
0.1
1
10
100
0
25
50
75
100
125
150
175
V
DS
– Drain-to-Source Voltage (V)
T
– Ambient Temperature
(
°
C)
A
* V
> minimum
V
GS
at which R
is specified
DS(on)
GS
Maximum Drain Current vs. Ambient Temperature
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–
4
10
–
3
10
–
2
10
–
1
10
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
服务热线：400-655-8788
5
IRLU2905ZPBF
TOĆ251AA (DPAK)
E
A
L2
b2
c1
MILLIMETERS
INCHES
Dim
A
A1
b
b1
b2
c
c1
D
Min
2.21
0.89
0.71
0.76
5.23
0.46
0.46
5.97
6.48
Max
2.38
1.14
0.89
1.14
5.43
0.58
0.58
6.22
6.73
Min
Max
0.094
0.045
0.035
0.045
0.214
0.023
0.023
0.245
0.265
0.087
0.035
0.028
0.030
0.206
0.018
0.018
0.235
0.255
D
L3
L1
b1
E
L
2.28 BSC
0.090 BSC
e
8.89
1.91
0.89
1.15
9.53
2.28
1.27
1.52
0.350
0.075
0.035
0.045
0.375
0.090
0.050
0.060
L
L1
L2
L3
b
e
c
ECN: S-03946—Rev. E, 09-Jul-01
DWG: 5346
A1
Note: Dimension
L3 is for reference only.
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6
IRLU2905ZPBF
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aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
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aiwan
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