VBsemi-Elec-IRLZ34NSTRPBF-VB
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IRLZ34NSTRPBF
N-Channel 60 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
V
DS
(V)
R
DS(on)
(
)
Q
g
(Max)
I
D
(A)
a, e
50
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Logic-Level Gate Drive
0.023 at V
GS
= 10 V
0.027 at V
GS
= 4.5 V
60
66 nC
40
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC
D
D
2
PAK (TO-263)
G
D
G
S
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
V
DS
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
60
10
V
V
GS
Continuous Drain Current
f
Continuous Drain Current
Pulsed Drain Current
a
T
C
= 25 °C
50
V
GS
at 10 V
I
D
T
C
= 100 °C
36
A
I
DM
200
Linear Derating Factor
1.0
W/°C
mJ
Linear Derating Factor (PCB Mount)
e
Single Pulse Avalanche Energy
b
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
e
Peak Diode Recovery dV/dt
c
0.025
400
E
AS
P
D
T
C
= 25 °C
150
W
T
A
= 25 °C
3.7
dV/dt
4.5
V/ns
°C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d
T
J
, T
stg
– 55 to + 175
300
d
for 10 s
Notes
a. Repetitive
rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 179 μH, R
g
= 25
, I
AS
= 51 A (see fig. 12).
c. I
SD
51 A, dI/dt
250 A/μs, V
DD
V
DS
, T
J
175 °C.
d. 1.6
mm from case.
e. When
mounted on 1″ square PCB (FR-4 or G-10 material).
f. Current
limited by the package, (die current = 51 A).
服务热线：400-655-8788
1
IRLZ34NSTRPBF
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
R
thJA
R
thJA
R
thJC
–
62
Maximum Junction-to-Ambient
(PCB Mount)
a
–
–
40
°C/W
Maximum Junction-to-Case (Drain)
1.0
Note
a. When
mounted on 1″ square PCB (FR-4 or G-10 material).
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
V
GS
= 0, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
60
–
–
–
–
V
V/°C
V
V
DS
Temperature Coefficient
0.070
Gate-Source Threshold Voltage
Gate-Source Leakage
1.0
–
–
3.0
100
25
250
–
V
GS
V
DS
= 60 V, V
GS
= 0 V
DS
= 48 V, V
GS
= 0 V, T
J
= 150 °C
=
10 V
–
nA
–
–
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
I
DSS
μA
V
–
–
V
GS
= 10 V
V
GS
= 4.5 V
I
D
= 21 A
b
I
D
= 15
A
b
–
23
27
–
R
DS(on)
g
fs
–
–
Forward Transconductance
Dynamic
V
DS
= 25 V, I
D
= 21A
b
23
–
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
C
iss
C
oss
C
rss
Q
g
–
–
–
–
–
–
–
–
–
–
3000
1000
200
–
–
–
–
–
–
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
pF
nC
60
10
I
D
= 51 A, V
DS
= 48 V,
Q
gs
Q
gd
t
d(on)
t
r
V
GS
= 5.0 V
see fig. 6 and 13
b
40
17
–
–
–
–
230
42
V
DD
= 30 V, I
D
= 51 A,
ns
R
g
= 4.6
, R
D
= 0.56
, see fig. 10
b
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
110
D
Between lead,
Internal Drain Inductance
L
D
L
S
–
–
4.5
7.5
–
–
6 mm (0.25″) from
package and center of
die contact
nH
G
Internal Source Inductance
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
MOSFET symbol
showing the
integral reverse
p – n junction diode
50
c
200
D
I
S
–
–
–
–
A
G
Pulsed Diode Forward Current
a
I
SM
S
Body Diode Voltage
V
SD
t
rr
T
J
= 25 °C, I
S
= 51 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 51 A, dI/dt = 100 A/μs
b
–
–
–
–
2.5
180
1.3
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
130
0.84
ns
μC
Q
rr
t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive
rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse
width
300 μs; duty cycle
2 %.
c. Current
limited by the package, (Die Current = 51 A).
服务热线：400-655-8788
2
IRLZ34NSTRPBF
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Fig. 1 – Typical Output Characteristics, T
C
= 25 °C
Fig. 3 – Typical Transfer Characteristics
Fig. 2 – Typical Output Characteristics, T
C
= 150 °C
Fig. 4 – Normalized On-Resistance vs. Temperature
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3
IRLZ34NSTRPBF
Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 – Typical Source-Drain Diode Forward Voltage
Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 – Maximum Safe Operating Area
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4
IRLZ34NSTRPBF
R
D
V
DS
V
GS
D.U.T.
R
g
+
V
–
DD
5 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
Fig. 10a – Switching Time Test Circuit
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 9 – Maximum Drain Current vs. Case Temperature
Fig. 10b – Switching Time Waveforms
Fig. 11 – Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRLZ34NSTRPBF
L
V
DS
V
DS
Vary t
p
to obtain
required I
AS
t
p
V
DD
R
g
D.U.T.
+
–
V
DD
V
DS
I
AS
5 V
0.01
Ω
t
p
I
AS
Fig. 12a – Unclamped Inductive Test Circuit
Fig. 12b – Unclamped Inductive Waveforms
Fig. 12c – Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 k
Ω
Q
G
12 V
0.2 µF
0.3 µF
5 V
V
G
Q
GS
Q
GD
+
–
V
DS
D.U.T.
V
GS
3 mA
Charge
I
G
I
D
Current sampling resistors
Fig. 13a – Basic Gate Charge Waveform
Fig. 13b – Gate Charge Test Circuit
服务热线：400-655-8788
6
IRLZ34NSTRPBF
Peak Dio
d
e Recovery
d
V/
d
t Test Circuit
+
Circuit layout con
s
ideration
s
•
Low
s
tray inductance
•
G
round plane
D.U.T.
•
Low leakage inductance
current tran
s
former
–
+
–
–
+
R
g
•
dV/dt controlled by R
g
•
Driver
s
ame type a
s
D.U.T.
•
I
S
D
controlled by duty factor “D”
•
D.U.T. – device under te
s
t
+
–
V
DD
Driver gate drive
P.W.
P.W.
D =
Period
Period
V
GS
= 10 V
a
D.U.T. l
S
D
waveform
D.U.T. V
D
S
waveform
Rever
s
e
recovery
current
Body diode forward
current
dI/dt
Diode recovery
dV/dt
V
DD
Re-applied
voltage
Body diode forward drop
Inductor current
I
S
D
Ripple
≤
5 %
Note
a. V
GS
= 5 V for logic level device
s
Fig. 14 – For N-Channel
服务热线：400-655-8788
7
IRLZ34NSTRPBF
2
RECOMMENDED MINIMUM PADS FOR D PAK:
3-Lead
0.420
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
服务热线：400-655-8788
8
IRLZ34NSTRPBF
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representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
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any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
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aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
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Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
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aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
Unless expressly stated in writing,
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aiwan VBsemi products are not intended for use in medical, life saving,
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Material Category Policy
Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be
oHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) – modification, unless otherwise specified as inconsistent.(www.VBsemi.com)
Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
2011/65 /.
Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as
halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products
conform to confirm compliance with IEC 61249-2-21 standard level JS709A.
