VBsemi-Elec-MTB75N05HDT4-VB
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MTB75N05HDT4
N-Channel 60 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
TrenchFET
®
powe
r
M
OSFET
V
DS
60
V
m
A
Package with low thermal resistance
4
R
DS(on)
V
GS
= 10 V
I
D
1
5
0
•
100 % R
g
and UIS tested
Configuration
Single
TO-263
D
G
S
D
G
N-Channel MOSFET
S
Top View
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
V
DS
LIMIT
60
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
± 20
150
T
C
= 25 °C
a
T
C
= 125 °C
Continuous Drain Current
I
D
65
Continuous Source Current (Diode Conduction)
a
Pulsed Drain Current
b
I
S
120
A
I
DM
I
AS
E
AS
350
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
65
L = 0.1 mH
211
mJ
W
T
C
= 25 °C
220
Maximum Power Dissipation
b
P
D
T
C
= 125 °C
70
T
J
, T
stg
Operating Junction and Storage Temperature Range
-55 to +175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
R
thJA
LIMIT
40
UNIT
Junction-to-Ambient
PCB Mount
c
°C/W
R
thJC
Junction-to-Case (Drain)
0.65
Notes
a.
Package limited.
b.
Pulse test; pulse width
300 μs, duty cycle
2 %.
c.
When mounted on 1″ square PCB (FR4 material).
服务热线：400-655-8788
1
MTB75N05HDT4
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
V
DS
V
GS(th)
I
GSS
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
V
GS
= 0, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
60
–
–
V
2.0
4.0
–
–
–
± 100
nA
V
GS
= 0 V
V
DS
= 60 V
–
1
50
250
–
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 10 V
V
DS
= 60 V, T
J
= 125 °C
V
DS
= 60 V, T
J
= 175 °C
–
–
μA
A
–
–
I
D(on)
V
DS
5 V
120
–
I
D
= 30 A
–
–
–
–
6
–
Drain-Source On-State Resistance
a
R
DS(on)
g
fs
I
D
= 30 A, T
J
= 125 °C
I
D
= 30 A, T
J
= 175 °C
12
15
94
–
m
S
–
Forward Transconductance
b
Dynamic
b
V
DS
= 15 V, I
D
= 30 A
–
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
–
–
–
–
–
7000
715
360
145
–
V
GS
= 0 V
V
DS
= 25 V, f = 1 MHz
pF
–
Q
g
–
96
24
27
1
Q
gs
Q
gd
V
GS
= 10 V
V
DS
= 30 V, I
D
= 75 A
f = 1 MHz
–
nC
–
–
R
g
0.3
–
1.7
24
Ω
t
d(on)
16
14
34
9
t
r
–
21
V
DD
= 30 V, R
L
= 0.4
I
D
75 A, V
GEN
= 10 V, R
g
= 1
Ω
ns
Ω
t
d(off)
–
51
t
f
–
14
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
–
–
–
I
SM
A
V
450
1.5
V
SD
Forward Voltage
I
F
= 75 A, V
GS
= 0
0.9
Notes
a.
Pulse test; pulse width
300 μs, duty cycle
2 %.
b.
Guaranteed by design, not subject to productio
n
t
esting.
c.
Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
MTB75N05HDT4
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
225
200
175
150
125
100
75
150
120
90
V
GS
= 10 V thru 7 V
V
GS
= 6 V
60
30
0
T
C
= 25 °C
50
V
GS
= 4 V
25
T
C
= 125 °C
T
C
= -55 °C
6
0
0
0
0
4
8
12
16
20
0
2
4
8
10
70
60
V
GS
– Gate-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1.5
1.2
0.9
0.6
0.3
0.0
200
160
120
80
T
C
= -55 °C
T
C
= 25 °C
T
C
= 125 °C
T
C
= 25 °C
40
T
C
= -55 °C
6
T
C
= 125 °C
2
0
0
14
28
42
56
4
8
10
I
D
– Drain Current (A)
V
GS
– Gate-to-Source Voltage (V)
Transfer Characteristics
Transconductance
10 000
8000
6000
4000
2000
0
0.020
0.016
0.012
0.008
0.004
0.000
C
iss
V
GS
= 10 V
C
oss
C
rss
0
10
20
30
40
50
20
40
60
80
100
120
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
服务热线：400-655-8788
3
MTB75N05HDT4
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
10
2.1
1.8
1.5
1.2
0.9
0.6
I
D
= 10 A
V
GS
= 10 V
I
D
= 110 A
V
DS
= 20 V
8
6
4
2
0
-50 -25
0
25
50
75 100 125 150 175
0
20
40
60
80
100
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
100
10
0.05
0.04
0.03
0.02
0.01
0.00
T
J
= 150 °C
1
0.1
T
J
= 25 °C
T
J
= 150 °C
0.01
0.001
T
J
= 25 °C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
GS
– Gate-to-Source Voltage (V)
V
SD
– Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
80
77
74
71
68
65
0.6
I
D
= 10 mA
0.2
-0.2
-0.6
-1.0
-1.4
-1.8
I
D
= 5 mA
I
D
= 250 μA
-50 -25
0
25
50
75 100 125 150
175
-50 -25
0
25
50
75 100 125 150 175
T
J
– Temperature (°C)
T
J
– Junction Temperature (°C)
Threshol
d
V
oltage
Drain Source Breakdown vs. Junction Temperature
服务热线：400-655-8788
4
MTB75N05HDT4
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise
noted)
1000
I
DM
Limited
I
D
Limited
100 μs
1 ms
100
10
10 ms
100 ms
1 s, 10 s, DC
Limited by R
DS(on)
*
1
0.1
BVDSS Limited
T
C
= 25 °C
Single Pulse
0.01
0.01
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area
1
0.1
0.01
0.001
0.0001
10
-4
10
-3
10
-2
10
-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
服务热线：400-655-8788
5
MTB75N05HDT4
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise
noted)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-1
1
10
-4
10
-3
10
-2
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
The characteristics shown in the two graphs
•
–
–
Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board – FR4, size 1″ x 1″ x 0.062″, double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
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6
MTB75N05HDT4
TO-263 (D
2
PAK): 3-LEAD
-B-
A
E
c2
6
E1
K
-A-
E3
A
e
A
b2
c
Detail “A”
E2
b
M
M
A
0.010
2 PL
INCHES
MILLIMETERS
MIN.
DIM.
A
MIN.
0.160
0.020
0.020
0.045
0.013
0.023
0.013
0.023
0.045
0.340
0.220
0.038
0.045
0.044
0.380
0.245
0.355
0.072
MAX.
0.190
0.039
0.035
0.055
0.018
0.028
0.017
0.027
0.055
0.380
0.240
0.042
0.055
0.052
0.410
–
MAX.
4.826
0.990
0.889
1.397
0.457
0.711
0.431
0.685
1.397
9.652
6.096
1.067
1.397
1.321
10.414
–
4.064
0.508
0.508
1.143
0.330
0.584
0.330
0.584
1.143
8.636
5.588
0.965
1.143
1.118
9.652
6.223
9.017
1.829
b
L1
b1
b2
DETAIL A (ROTATED 90°)
Thin lead
c*
Thick lead
Thin lead
b
b1
c1
Thick lead
c2
D
D1
D2
D3
D4
E
SECTION A-A
E1
E2
E3
e
0.375
0.078
9.525
1.981
0.100 BSC
2.54 BSC
K
0.045
0.575
0.090
0.040
0.050
0.055
0.625
0.110
0.055
0.070
1.143
14.605
2.286
1.016
1.270
1.397
15.875
2.794
1.397
1.778
Notes
L
1.
Plane B includes maximum features of heat sink tab and plastic.
2.
No more than 25 % of L1 can fall above seating plane by
max.
8 mils.
3.
Pin-to-pin coplanarity max. 4 mils.
4.
*: Thin lead is for SUB, SYB.
L1
L2
L3
L4
M
0.010 BSC
0.254 BSC
–
0.050
Thick lead is for SUM, SYM, SQM.
–
0.002
5.
Use inches as the primary measurement.
6.
This feature is for thick lead.
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
服务热线：400-655-8788
7
MTB75N05HDT4
2
RECOMMENDED MINIMUM PADS FOR D
PAK: 3-Lead
0.420
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
服务热线：400-655-8788
8
MTB75N05HDT4
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Parameter data sheets and technical specifications can be provided may vary depending on the application and
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