VBsemi-Elec-MTD3055EL-VB
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MTD3055EL
N-Channel 60 V (D-S) MOSFET
FEATURES
TrenchFET
®
Power MOSFET
PRODUCT SUMMARY
•
•
•
V
DS
(V)
R
DS(on)
(
) Max.
0.073 at V
GS
= 10 V
0.085 at V
G
S
= 4.5 V
I
D
(A)
18
Q
g
(Typ.)
100 % R
g
and UIS Tested
Material categorization:
60
19.8
For definitions of compliance please see
1
5
TO-252
APPLICATIONS
D
•
DC/DC Converters
•
•
DC/AC Inverters
Motor Drives
G
Drain Connected to Tab
D
G
S
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
C
Parameter
Symbol
Limit
60
20
Unit
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
V
GS
T
C
= 25 °C
1
8
1
4
Continuous Drain Current
I
D
T
C
= 70 °C
A
Pulsed Drain Current (t = 300 µs)
Avalanche Current
I
DM
I
AS
25
15
Single Avalanche Energy
a
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
c
E
AS
11.25
41.7
b
mJ
W
Maximum Power Dissipation
a
P
D
2.1
Operating Junction and Storage
T
e
mperature Range
T
J
, T
stg
– 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
c
Symbol
R
thJA
Limit
60
Unit
°C/W
Junction-to-Case (Drain)
R
thJC
3
Notes:
a. Duty cycle
1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1″ square PCB (FR-4 material).
d. Base on T
C
= 25 °C.
服务热线：400-655-8788
1
MTD3055EL
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0
V
,
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
60
V
1.0
3.0
250
1
V
DS
= 0
V
,
V
GS
=
20 V
nA
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 60 V, V
GS
= 0
V
,
T
J
= 125 °C
V
DS
= 60 V, V
GS
= 0
V
,
T
J
= 150 °C
V
DS
10
V
,
V
GS
= 10 V
Zero Gate Voltage Drain Current
I
DSS
50
µA
250
On-State Drain Current
a
I
D(on)
R
DS(on)
g
fs
20
A
S
V
GS
= 10
V
,
I
D
= 6.6 A
0.073
0.08
5
25
Drain-Source On-State Resistance
a
V
GS
= 4.5
V
,
I
D
= 6 A
Forward
T
r
ansconductance
a
Dynamic
b
V
DS
= 15
V
,
I
D
= 6.6 A
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
T
o
tal Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
T
u
rn-On Delay Time
c
Rise Time
c
T
u
rn-Off Delay Time
c
Fall Time
c
T
u
rn-On Delay Time
c
Rise Time
c
C
iss
C
oss
C
rss
Q
g
6
60
85
40
19.8
3.6
4.1
2
V
DS
= 30 V,
V
GS
= 0
V
, f = 1
M
Hz
pF
30
Q
gs
Q
gd
R
g
V
DS
= 30 V,
V
GS
= 10
V
,
I
D
= 6.6 A
f = 1 MHz
nC
0.4
4
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
8
16
20
27
10
57
87
27
16
11
18
5
V
DD
= 30 V,
R
L
= 9.6
I
D
5.2 A, V
GEN
= 10
V
,
R
g
= 1
ns
38
58
18
8
V
DD
= 30 V,
R
L
= 9.6
T
u
rn-Off Delay Time
c
Fall Time
c
I
D
5.2 A, V
GEN
= 4.5
V
,
R
g
= 1
Drain-Source Body Diode Ratings and Characteristics
b
T
C
= 25 °C
Continuous Current
I
S
I
SM
1
8
25
1.5
51
5
A
Pulsed Current
Forward Voltage
a
V
SD
t
rr
I
F
= 5.2 A, V
GS
= 0 V
0.8
34
3
V
ns
A
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
RM(REC)
Q
rr
I
F
= 5.2 A, dI/dt = 100 A/µs
50
75
nC
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
MTD3055EL
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.10
0.09
0.08
0.07
0.06
0.04
25
20
15
10
5
V
GS
= 10 V thru 7 V
V
GS
= 4 V
V
GS
=4.5V
V
GS
= 10 V
V
GS
= 3 V
0
0
0.5
1
1.5
2
0
5
10
15
20
25
V
DS
– Drain-to-Source Voltage (V)
I
D
– Drain Current (A)
Output Characteristics
On-Resistance vs. Drain Current
5
4
3
2
1
0
0.15
0.12
0.09
0.06
0.03
I
D
= 6.6 A
T
J
= 125
°
C
T
C
= 25
°
C
T
J
= 25
°
C
T
C
= 125
°
C
T
C
= – 55
°
C
2
4
6
8
10
0
1
2
3
4
V
GS
– Gate-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transfer Characteristics
On-Resistance vs. Gate-to-Source Voltage
10
8
40
30
20
10
0
I
D
= 6.6 A
T
C
= – 55
°
C
T
C
= 25
°
C
V
DS
= 30 V
V
DS
= 15 V
6
T
C
= 125
°
C
V
DS
= 40 V
4
2
0
0
3
6
9
12
0
6
12
18
24
I
D
– Drain Current (A)
Q
g
– Total Gate Charge (nC)
Transconductance
Gate Charge
服务热线：400-655-8788
3
MTD3055EL
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
10
1
2.7
2.4
2.1
1.8
1.5
1.2
I
D
= 250 μA
T
J
= 150
°
C
T
J
= 25
°
C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
– 50
– 25
0
25
50
75
100 125 150
V
SD
– Source-to-Drain Voltage (V)
T
J
– Temperature (
°
C)
Source-Drain Diode Forward Voltage
Threshold Voltage
127
122
117
112
107
102
1250
1000
750
500
250
0
I
D
= 250 μA
C
iss
C
oss
C
rss
0
– 50
– 25
0
25
50
75
100 125 150
20
40
60
80
100
V
DS
– Drain-to-Source Voltage (V)
T
J
– Temperature (
°
C)
Capacitance
Drain Source Breakdown vs. Junction Temperature
20
2.25
1.8
V
GS
= 10 V, I
D
= 6.6 A
15
10
5
V
GS
= 4.5 V, I
= 6 A
D
1.35
0.9
0
0.45
0
25
50
75
100
125
150
– 50
– 25
0
25
50
75
100 125 150
T
C
– Case Temperature (
°
C)
T
J
– Junction Temperature (
°
C)
Current Derating
On-Resistance vs. Junction Temperature
服务热线：400-655-8788
4
MTD3055EL
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
Limited by R
DS(on)
*
100 μs
1 ms
10
T
J
= 25
°
C
10
1
10 ms
DC, 10 s 1 s, 100 ms
0.1
T
J
= 150
°
C
T
C
= 25
°
C
BVDSS Limited
100
Single Pulse
1
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
– Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Time (s)
Single Pulse Avalanche Current Capability vs. Time
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
1
10
30
Normalized Thermal Transient Impedance, Junction-to-Case
服务热线：400-655-8788
5
TO-252AA Case Outline
E
A
MILLIMETERS
INCHES
C2
b3
DIM.
A
MIN.
MAX.
2.38
0.127
0.88
1.14
5.46
0.61
0.89
6.22
–
MIN.
MAX.
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
–
2.18
–
0.086
–
A1
b
0.64
0.76
4.95
0.46
0.46
5.97
4.10
6.35
4.32
9.40
0.025
0.030
0.195
0.018
0.018
0.235
0.161
0.250
0.170
0.370
b2
b3
C
C2
D
D1
E
6.73
–
0.265
–
E1
H
b
C
b2
e
10.41
0.410
A1
e1
e
2.28 BSC
4.56 BSC
1.40
0.090 BSC
0.180 BSC
e1
L
1.78
1.27
1.02
1.52
0.055
0.070
0.050
0.040
0.060
L3
L4
L5
0.89
–
0.035
–
1.01
0.040
ECN: T16-0236-Rev. P, 16-May-16
DWG: 5347
E1
Notes
Dimension L3 is for reference only.
•
服务热线：400-655-8788
6
MTD3055EL
RECOMMENDED MINIMUM
P
A
DS FOR D
P
A
K (TO-252)
0.224
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
服务热线：400-655-8788
7
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aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
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