VBsemi-Elec-NCE55P05S-VB
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P-Channel 60 V (D-S) MOSFET
FEATURES
• TrenchFET
®
power MOSFET
PRODUCT SUMMARY
V
DS
(V)
-60
0.050
0.060
-8
• 100 % R
g
and UIS tested
R
DS(on)
(
Ω
) at V
GS
= -10 V
R
DS(on)
(
Ω
) at V
GS
= -4.5 V
I
D
(A) per leg
S
SO-8
S
S
S
G
1
2
3
4
8
7
6
5
D
D
G
D
D
D
Top View
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
-60
UNIT
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
20
T
C
= 25 °C
-8
I
D
Continuous Drain Current
T
C
= 125 °C
-4.75
-4.5
I
S
Continuous Source Current (Diode Conduction)
Pulsed Drain Current
a
A
I
DM
I
AS
-32
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
-22.4
25
L = 0.1 mH
E
AS
mJ
W
T
C
= 25 °C
5
Maximum Power Dissipation
a
P
D
T
C
= 125 °C
1.67
-55 to +175
T
J
, T
stg
Operating Junction and Storage Temperature Range
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
R
thJA
LIMIT
110
30
UNIT
PCB Mount
b
Junction-to-Ambient
°C/W
R
thJF
Junction-to-Foot (Drain)
Notes
a. Pulse
test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. When
mounted on 1″ square PCB (FR-4 material).
c. Parametric
verification ongoing.
服务热线：400-655-8788
1
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
MAX. UNIT
TYP.
Static
V
DS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= -250 μA
V
DS
= V
GS
, I
D
= -250 μA
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
-60
–
–
V
-1
.0
-2.5
V
DS
= 0 V, V
GS
V
GS
= 0 V
V
DS
= -60 V
GS
= 0 V
V
DS
= -60 V, T
J
= 125 °C
=
20 V
–
–
–
100
nA
μA
A
–
-1
I
DSS
V
Zero Gate Voltage Drain Current
On-State Drain Current
a
–
–
-50
V
GS
= 0 V
V
GS
= -10 V
V
GS
= -10 V
V
DS
= -60 V, T
J
= 175 °C
V
DS
≤
-5 V
–
–
–
-150
I
D(on)
-30
–
–
–
–
–
–
–
I
D
= -4.3 A
0.050
V
GS
= -10 V
V
GS
= -10 V
GS
= -4.5 V
V
DS
= -15 V, I
D
= -4.3 A
I
D
= -4.3 A, T
J
= 125 °C
–
0.070
0.080
0.060
Drain-Source On-State Resistance
a
R
DS(on)
Ω
I
D
= -4.3 A, T
J
= 175 °C
–
V
I
D
= -3.8 A
–
Forward Transconductance
b
Dynamic
b
g
fs
–
13
S
C
iss
C
oss
C
rss
Q
g
Input Capacitance
Output Capacitance
Reverse
T
ransfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
–
–
1530
334
114
43.4
4.7
9
1910
417
142
65
–
V
GS
= 0 V
V
DS
= -30 V, f = 1 MHz
pF
–
–
Q
gs
Q
gd
R
g
V
GS
= -10 V
V
DS
= -30 V, I
D
= -5 A
f = 1 MHz
–
nC
–
–
1.3
–
2.5
11
4
Ω
Turn-On Delay Time
c
Rise Time
c
t
d(on)
t
r
t
d(off)
t
f
17
17
52
9
–
11
V
DD
= -30 V, R
L
= 8.8
Ω
I
D
≅
-5 A, V
GEN
= -10 V, R
g
= 1
Ω
ns
Turn-Off Delay Time
c
Fall Time
c
–
35
–
6
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
–
–
–
-32
A
V
V
SD
I
F
= -2.8 A, V
GS
= 0 V
Forward Voltage
-0.8
-1.2
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
30
24
18
12
6
30
24
18
12
6
V
GS
= 10 V thru
5
V
V
GS
=
4
V
T
C
= 25
°
C
V
GS
=
3
V
T
C
= 125
°
C
T
C
= – 55
°
C
0
0
0
0
0
2
4
6
8
10
10
60
0
0
0
2
4
6
8
10
V
D
S
– Drain-to-
S
ource Voltage (V)
V
GS
–
G
ate-to-
S
ource Voltage (V)
Output Characteristics
Transfer Characteristics
10
8
25
T
C
= 25
°
C
T
C
= – 55
°
C
20
15
10
5
6
T
C
= 125
°
C
T
C
= 25
°
C
4
2
T
C
= 125
°
C
T
C
= – 55
°
C
0
0
2
4
6
8
1
2
3
4
5
I
D
– Drain Current (A)
V
GS
–
G
ate-to-
S
ource Voltage (V)
Transfer Characteristics
Transconductance
0.18
0.13
0.10
0.07
0.04
0.01
3000
2400
1800
1200
600
C
i
ss
V
GS
= 4.5 V
V
GS
= 10 V
C
o
ss
C
r
ss
0
6
12
18
24
30
12
24
36
48
V
D
S
– Drain-to-
S
ource Voltage (V)
I
D
– Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
服务热线：400-655-8788
3
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
10
2.0
1.7
1.4
1.1
0.8
0.5
I
D
= 5 A
D
S
= 30 V
I
D
= 3.5 A
V
V
GS
= 10 V
8
6
V
GS
= 4.5 V
4
2
0
0
9
18
27
36
45
– 50
– 25
0
25
50
75 100
125 150 175
Q
g
– Total
G
ate Charge (nC)
T
J
– Junction Temperature (
°
C)
Gate Charge
On-Resistance vs. Junction Temperature
0.5
0.4
0.3
0.2
0.1
0.0
100
10
T
J
= 150
°
C
1
T
J
= 25
°
C
0.1
T
J
= 150
°
C
0.01
0.001
T
J
= 25
°
C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
S
D
–
S
ource-to-Drain Voltage (V)
V
GS
–
G
ate-to-
S
ource Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.9
0.7
– 60
– 65
– 70
– 75
– 80
I
D
= 1 mA
I
D
= 250 μA
0.5
0.3
I
D
= 5 mA
0.1
– 0.1
– 0.3
– 50
– 25
0
25
50
75 100
125 150 175
– 50
– 25
0
25
50
75 100
125 150 175
T
J
– Temperature (
°
C)
T
J
– Junction Temperature (
°
C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
服务热线：400-655-8788
4
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
100
I
DM
Limited
10
100 μ
s
1 m
s
Limited by R
D
S
(on)
*
1
0.1
10 m
s
100 m
s
1
s
10
s
, DC
T
C
= 25
°
C
S
ingle Pul
s
e
BVD
SS
Limited
0.01
0.01
0.1
1
10
100
V
D
S
– Drain-to-
S
ource Voltage (V)
* V
GS
> minimum V
GS
at which R
D
S
(on)
i
s s
pecified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 105 °C/W
thJA
(t)
3. T
– T
= P
Z
A DM
thJA
JM
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
服务热线：400-655-8788
5
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
-3
-2
-1
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
•
The characteristics shown in the two graphs
– Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
– Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are e
x
t
ra
c
t
ed from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board – FR4, size 1″ x 1″ x 0.062″, double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
服务热线：400-655-8788
6
NCE55P05S
S
OIC (NARROW): 8-LEAD
JEDEC P
a
rt N
u
m
b
er: M
S
-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (G
a
ge Pl
a
ne)
A
All Le
a
d
s
0.101 mm
0.004″
q
e
B
A
1
L
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A
1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
服务热线：400-655-8788
7
NCE55P05S
RECOMMENDED MINIMUM
P
A
DS FOR SO-8
0.172
(4.369)
0.028
(0.711)
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
服务热线：400-655-8788
8
NCE55P05S
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aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
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