VBsemi-Elec-NTD6416ANT4G-VB
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NTD6416ANT4G
N-Channel 100 V (D-S) MOSFET
FEATURES
• TrenchFET
®
power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(
Ω
)
I
D
(A)
25
Q
g
(Typ.)
• 100 % UIS tested
0.055 at V
GS
= 10 V
0.057 at V
GS
= 4.5 V
100
25
21nC
APPLICATIONS
• Primary side switch
D
TO-252
G
G
D
S
S
N-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
100
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
V
GS
20
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
25
20
Continuous Drain Current (T
J
= 175 °C)
I
D
12
b, c
10
b, c
75
50
e
6.9
b, c
A
Pulsed Drain Current
I
DM
I
S
T
C
= 25 °C
T
A
= 25 °C
Continuous Source-Drain Diode Current
Avalanche Current Pulse
I
AS
33
L = 0.1 mH
Single Pulse Avalanche Energy
E
AS
55
mJ
W
T
C
= 25 °C
C
= 70 °C
83
T
58
Maximum Power Dissipation
P
D
T
A
= 25 °C
T
A
= 70 °C
8.3
b, c
5.8
b, c
-55 to +175
Operating Junction and Storage Temperature Range
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
b, d
SYMBOL
R
thJA
TYPICAL
MAXIMUM
UNIT
t
≤
10 s
15
18
°C/W
Maximum Junction-to-Case
Steady State
R
thJC
1.5
1.8
Notes
a. Based
on T
C
= 25 °C.
b. Surface
mounted on 1″ x 1″ FR4 board.
c. t
= 10 s.
d. Maximum
under steady state conditions is 50 °C/W.
e. Calculated
based on maximum junction temperature. Package limitation current is 50 A.
服务热线：400-655-8788
1
NTD6416ANT4G
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
Δ
V
DS
/T
J
Δ
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
100
–
–
–
–
V
165
-11
1.2
mV/°C
–
–
V
V
DS
= V
GS
1.6
0.8
I
D
= 250 μA
,
I
GSS
V
DS
= 0 V, V
GS
=
20 V
–
–
–
–
–
–
100
1
nA
V
DS
= 100 V, V
GS
= 0 V
DS
= 100 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
I
D(on)
R
DS(on)
g
fs
μA
A
V
–
10
–
25
V
GS
= 10 V, I
D
=12A
–
0.055
0.057
Drain-Source On-State Resistance
a
Ω
S
=8A
V
GS
=4.5 V, I
D
Forward Transconductance
a
Dynamic
b
V
DS
= 15 V, I
D
= 12 A
–
25
–
Input Capacitance
C
iss
C
oss
C
rss
Q
g
–
–
–
–
–
–
–
–
–
–
–
1800
180
60
–
–
–
Output Capacitance
V
DS
= 12 V, V
GS
= 0 V, f = 1 MHz
pF
Reverse Transfer Capacitance
Total Gate Charge
21
10
9
32
–
Gate-Source Charge
Q
gs
Q
gd
R
g
V
DS
= 50 V, V
GS
= 10 V, I
D
= 12 A
f = 1 MHz
nC
Gate-Drain Charge
–
Gate Resistance
1.5
10
10
15
10
–
Ω
Turn-On Delay Time
t
d(on)
t
r
t
d(off)
t
f
15
15
25
15
Rise Time
V
DD
= 50 V, R
L
= 5
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
ns
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
I
S
= 10 A
–
–
–
–
–
–
–
–
–
50
40
1.2
75
150
–
A
0.8
50
100
38
12
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
I
F
= 10 A, di/dt = 100 A/μs, T
J
= 25 °C
ns
t
b
–
Note
a. Pulse
test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed
by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
NTD6416ANT4G
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
40
30
20
10
0
10
T
= – 55 °C
C
V
= 10 V thru 7 V
GS
8
T
= 25 °C
V
= 4 . 5 V
C
GS
6
4
T
C
= 125 °C
V
GS
= 2 . 5 V
2
V
= 1 . 5 V
GS
0
0.4
1.2
1.6
0.8
0.0
0.5
1.0
1.5
2.0
2.5
3.0
2.0
2.4
V
GS
– Gate-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.070
0.060
0.050
0.040
2500
2000
1500
1000
500
C
iss
V
GS
= 10 V
C
oss
C
rss
0
0
18
24
12
6
0
20
40
60
80
100
I
– Drain Current (A)
D
V
DS
– Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
10
8
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
I
= 12 A
D
I
= 12 A
D
V
DS
= 50 V
V
GS
= 10 V
6
V
DS
= 80 V
4
2
0
0
5
10
15
20
25
30
35
– 50
– 25
0
25
50
75 100
125 150 175
T
J
– Junction
T
e
mperature (°C)
Q
g
–
T
o
tal Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
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NTD6416ANT4G
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.08
100
I
= 12 A
D
0.07
0.06
0.05
0.04
T
= 125 °C
= 25 °C
A
T
J
= 150 °C
10
T
A
T
= 25 °C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1
2
3
4
5
6
7
V
SD
– Source-to-Drain Voltage (V)
V
– Gate-to-Source Voltage (V)
GS
Source-Drain Diode Forward Voltage
R
DS(on)
vs. V
GS
vs. Temperature
4.5
4.0
3.5
3.0
2.5
2.0
1.5
200
150
100
50
I
= 250 µA
D
0
– 50
– 25
0
25
50
75 100
125 150 175
0.001
0.01
0.1
1
10
100
1000
T
J
–
T
e
mperature (°C)
Time (s)
Threshold Voltage
100
Single Pulse Power, Junction-to-Ambient
Limited by R
*
DS(on)
100 µs
10
1 ms
10 ms
1
100 ms
1 s
0.1
10 s
T
= 25 °C
A
BVDSS
Limited
DC
Single Pulse
0.01
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
* V
> minimum V
at which R
is specified
GS
GS
DS(on)
Safe Operating Area
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4
NTD6416ANT4G
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
80
60
40
20
0
40
30
20
10
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
– Case
T
e
mperature (°C)
T
C
– Case
T
e
mperature (°C)
Current Derating
a
Power Derating
Note
a. The
power dissipation P
D
is based on T
J
(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
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5
NTD6416ANT4G
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
N
otes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 40 °C/W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
Single Pulse
0.01
4. Surface Mounted
-4
-3
-2
-1
10
10
10
10
1
100
1000
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
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6
NTD6416ANT4G
TO-252AA Case Outline
E
A
MILLIMETERS
INCHES
C2
b3
DIM.
A
MIN.
MAX.
2.38
0.127
0.88
1.14
5.46
0.61
0.89
6.22
–
MIN.
MAX.
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
–
2.18
–
0.086
–
A1
b
0.64
0.76
4.95
0.46
0.46
5.97
4.10
6.35
4.32
9.40
0.025
0.030
0.195
0.018
0.018
0.235
0.161
0.250
0.170
0.370
b2
b3
C
C2
D
D1
E
6.73
–
0.265
–
E1
H
b
C
b2
e
10.41
0.410
A1
e1
e
2.28 BSC
4.56 BSC
1.40
0.090 BSC
0.180 BSC
e1
L
1.78
1.27
1.02
1.52
0.055
0.070
0.050
0.040
0.060
L3
L4
L5
0.89
–
0.035
–
1.01
0.040
ECN: T16-0236-Rev. P, 16-May-16
DWG: 5347
E1
Notes
Dimension L3 is for reference only.
•
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7
NTD6416ANT4G
RECOMMENDED MINIMUM
P
A
DS FOR D
P
A
K (TO-252)
0.224
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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8
NTD6416ANT4G
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T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
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aiwan
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