VBsemi-Elec-NTE4153NT1G-VB
| Part # | VBsemi-Elec-NTE4153NT1G-VB |
Download  | VBsemi-Elec-NTE4153NT1G-VB |
N-Channel
2
0 V (D-S) MOSFET
FEATURES
• TrenchFET
®
power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(
Ω
) MAX.
I
D
(A)
c
Q
g
(TYP.)
• 100 % R
g
tested
0.
270
at V
GS
= 4.5 V
0.8
5
2
0
1.4 nC
0.
390
at V
GS
= 2.5 V
0.70
APPLICATIONS
• Smart phones, tablet PC’s
– DC/DC converters
– Boost converters
– Load switch, OVP switch
SC-7
5
D
G
S
1
2
G
3
D
Top
V
ie
w
S
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
2
0
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
V
GS
12
T
C
= 25 °C
C
= 70 °C
0.8
5
T
0.6
5
Continuous Drain Current (T
J
= 150 °C)
I
D
T
A
= 25 °C
T
A
= 70 °C
0.7
a, b
0.6
a, b
6
A
Pulsed Drain Current (t = 300 μs)
I
DM
I
S
T
C
= 25 °C
T
A
= 25 °C
0.4
Continuous Source-Drain Diode Current
0.3
T
C
= 25 °C
0.5
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
0.3
Maximum Power Dissipation
P
D
W
0.4
a, b
0.3
a, b
-55 to +150
260
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
a, d
SYMBOL
TYP.
250
MAX.
300
UNIT
t
≤
10 s
Steady State
R
thJA
R
thJF
°C/W
Maximum Junction-to-Foot (Drain)
225
270
Notes
a. Surface
mounted on 1″ x 1″ FR4 board.
b. t
= 10 s.
c. Based
on T
C
= 25 °C.
d. Maximum
under steady state conditions is 360 °C/W.
服务热线：400-655-8788
1
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
V
DS
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
2
0
–
–
32
-3
–
–
–
V
mV/°C
V
Δ
V
DS
/T
J
Δ
V
GS(th)
/T
J
V
GS(th)
–
–
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= 4.5 V
0.
5
–
1.
0
0.
1
20
0.
1
10
–
–
Gate-Source Leakage
I
GSS
V
DS
= 0 V, V
GS
=
12 V
–
–
μA
V
DS
=
2
0 V, V
GS
= 0 V
V
DS
=
2
0 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
–
–
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
–
–
I
D(on)
2
–
A
Ω
S
V
GS
= 4.5 V, I
D
= 1 A
0.
270
–
–
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 2.5 V, I
D
= 0.5 A
V
DS
= 10 V, I
D
= 1.4 A
0.390
–
–
–
Forward Transconductance
a
Dynamic
b
g
fs
5
–
Input Capacitance
C
iss
C
oss
C
rss
–
–
105
23
11
2.7
1.4
0.3
0.5
7
–
–
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 1.4 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 1.4 A
f = 1 MHz
pF
–
–
–
4.1
2.1
–
Total Gate Charge
Q
g
–
nC
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
gs
Q
gd
R
g
–
–
–
1.4
–
14
4
Ω
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
2
–
9
18
16
16
16
20
23
12
V
DD
= 15 V, R
L
= 13.6
Ω
I
D
≅
1.1 A, V
GEN
= 10 V, R
g
= 1
Ω
Turn-Off Delay Time
Fall Time
–
8
–
8
ns
Turn-On Delay Time
Rise Time
–
8
–
13
15
6
V
DD
= 15 V, R
L
= 13.6
Ω
I
D
≅
1.1 A, V
GEN
= 4.5 V, R
g
= 1
Ω
Turn-Off Delay Time
Fall Time
–
–
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
I
F
= 1.1 A
–
–
–
–
–
–
–
–
–
0.4
6
A
0.8
8
1.2
16
6
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
ns
nC
Q
rr
t
a
3
I
F
= 1.1 A, dI/dt = 100 A/μs, T
J
= 25 °C
5
–
ns
Reverse Recovery Rise Time
t
b
3
–
Notes
a. Pulse
test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed
by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
-3
0.006
T
J
= 25
°
C
10
-4
0.005
10
-5
0.004
T
J
= 150
°
C
10
-6
0.003
T
J
= 25
°
C
10
-7
0.002
10
-8
0.001
10
-9
0.000
0
5
10
15
0
0
0
3
6
9
12
15
V
GS
–
G
ate-to-
S
ource Voltage (V)
V
GS
–
G
ate-
S
ource Voltage (V)
Gate Source Voltage vs. Gate Current
Gate Source Voltage vs. Gate Current
6
4.5
3
0.20
0.17
0.14
0.1
0
0.08
V
GS
= 10 V thru 3 V
V
GS
= 2.5 V
V
GS
= 4.5 V
V
GS
= 2 V
1.5
0
V
GS
= 10 V
0
1.5
3
4.5
6
0.5
1
1.5
2
I
D
– Drain Current (A)
V
D
S
– Drain-to-
S
ource Voltage (V)
Output Characteristics
On-Resistance vs. Drain Current
10
8
2
1.5
1
I
D
= 1.4 A
V
D
S
= 8 V
6
V
D
S
= 15 V
4
V
D
S
=
1
4 V
T
C
= 25
°
C
0.5
0
2
T
C
= 125
°
C
T
C
= – 55 °C
0
0
0.7
1.4
2.1
2.8
0.5
1
1.5
2
V
GS
–
G
ate-to-
S
ource Voltage (V)
Q
g
– Total
G
ate Charge (nC)
Transfer Characteristics
Gate Charge
服务热线：400-655-8788
3
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1.65
1.40
1.15
0.90
0.65
10
I
D
= 1.5 A
T
J
= 150
°
C
1
T
J
= 25
°
C
V
GS
= 10 V; 4.5 V
0.1
– 50
– 25
0
25
50
75
100 125 150
0.0
0.3
0.6
0.9
1.2
V
S
D
–
S
ource-to-Drain Voltage (V)
T
J
– Junction Temperature (
°
C)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
0.25
0.2
1.3
1.15
1
I
D
= 250 μA
I
D
= 1.5 A
T
J
= 125
°
C
T
J
= 25
°
C
0.15
0.1
0.85
0.7
0.55
0.05
– 50
– 25
0
25
50
75
100 125 150
0
2
4
6
8
10
V
GS
–
G
ate-to-
S
ource Voltage (V)
T
J
– Temperature (
°
C)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
10
10
8
Limited by R
D
S
(on)
*
100 μ
s
1 m
s
1
0.1
6
10 m
s
4
100 m
s
DC, 10
s
, 1
s
0.01
0.001
2
T
A
= 25
°
C
BVD
SS
Limited
10
0
0.1
1
100
0.001
0.01
0.1
1
10
100
V
D
S
– Drain-to-
S
ource Voltage (V)
* V
GS
> minimum V
GS
at which R
D
S
(on)
i
s s
pecified
Time (
s
)
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
服务热线：400-655-8788
4
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1.8
1.35
0.9
0.45
0
0
25
50
75
100
125
150
T
C
– Ca
s
e Temperature (
°
C)
Current Derating*
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.45
0.36
0.27
0.18
0.09
0.00
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
A
– Ambient Temperature (°C)
T
C
– Ca
s
e Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J (max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
服务热线：400-655-8788
5
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
0.1
0.1
Note
s
:
P
DM
0.05
t
1
0.02
t
2
t
1
1. Duty Cycle, D =
t
2
2. Per Unit Ba
s
e = R
= 360 °C/W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
S
ingle Pul
s
e
4.
S
urface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
100
1000
10
Sq
uare Wave Pul
s
e Duration (
s
)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
S
ingle Pul
s
e
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Sq
uare Wave Pul
s
e Duration (
s
)
Normalized Thermal Transient Impedance, Junction-to-Foot
服务热线：400-655-8788
6
NTE4153NT1G
SC-75A: 3 Leads
L2
D
b b b
1
2
D
e2
2X
D
3
B1(
b
1)
3
e1
3
E/2
1
2
E
E1
1
1
1
2
b b b
C
2X
bbb
C
2X
3
4
e3
B1
2XB1
b
1
M
ddd
C
A –
B
D
With Tin Planting
Base Metal
c1
5
Section B-B
b b b
C
4X
Seating Plane
D
Notes
Dimensions in millimeters will govern.
MILLIMETERS
DIM.
MIN.
–
NOM.
MAX.
0.80
0.10
0.80
0.24
0.21
0.15
0.12
1.68
1.70
0.86
NOTE
1. Dimension D does not include mold flash, protrusions or gate
burrs. Mold flash protrusions or gate burrs shall not exceed
0.10 mm per end. Dimension E1 does not include Interlead flash
or protrusion. Interlead flash or protrusion shall not exceed
0.10 mm per side.
A
A
1
A
2
B
1
b
1
c
–
0.00
0.65
0.19
0.17
0.13
0.10
1.48
1.50
0.66
–
0.70
–
5
2. Dimensions D and E1 are determined at the outmost extremes of
the plastic body exclusive of mold flash, tie bar burrs, gate burrs
and interelead flash, but including any mismatch between the top
and bottom of the plastic body.
–
–
5
5
c
1
D
–
3. Datums A, B and D to be determined 0.10 mm from the lead tip.
4. Terminal positions are shown for reference only.
1.575
1.60
1, 2
E
5. These dimensions apply to the flat section of the lead between
0.08 mm and 0.15 mm from the lead tip.
E
1
e
1
e
2
e
3
L
0.76
1, 2
0.50 BSC
1.00 BSC
0.50 BSC
0.205
0.40 ref.
0.15 BSC
–
DIMENSIONS
TOLERANCES
aaa
bbb
ccc
ddd
0.10
0.10
0.10
0.10
0.15
0.30
L
1
L
2
θ
0°
4°
8°
θ
1
–
10°
服务热线：400-655-8788
7
NTE4153NT1G
RECOMMENDED MINIMUM
P
A
DS FOR SC-75A: 3-Lead
0.014
(0.356)
0.264
(0.660)
0.054
(1.372)
Recommended Minimum Pads
Dimensions in Inches/(mm)
服务热线：400-655-8788
8
NTE4153NT1G
Disclaimer
All products due to improve reliability, function or design or for other reasons, product specifications and
data are subject to change without notice.
Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their
representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of
any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
T
aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
including a particular purpose, non-infringement and merchantability guarantee.
Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
T
aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
Unless expressly stated in writing,
T
aiwan VBsemi products are not intended for use in medical, life saving,
or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal
injury or death, use or sale of products used in
T
aiwan VBsemi such applications using client did not express their
own risk. Contact your authorized
T
aiwan VBsemi people who are related to product design applications and
other terms and conditions in writing.
The information provided in this document and the company’s products without a license, express or implied,
by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product
names and trademarks referred to herein are trademarks of their respective representatives will be all.
Material Category Policy
Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be
RoHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) – modification, unless otherwise specified as
inconsistent.(www.VBsemi.com)
Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
2011/65 /.
Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as
halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products
conform to confirm compliance with IEC 61249-2-21 standard level JS709A.
