VBsemi-Elec-NTF2955PT1G-VB
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NTF2955PT1G
P-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
TrenchFET
®
Power MOSFET
100 % UIS Tested
I
D
(A)
a
–
7
.
0
V
DS
(V)
R
DS(on)
(
)
Q
g
(Typ.)
0.0
55
at V
GS
= – 10 V
0.0
65
at V
GS
= – 4.5 V
APPLICATIONS
• Load
Switch
– 60
30 nC
–
6.0
S
SO
T
–
223
G
D
S
D
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
– 60
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
± 20
–
7.0
a
T
C
= 25 °C
T
C
= 70 °C
A
= 25 °C
– 5.2
Continuous Drain Current (T
J
= 150 °C)
I
D
–
4
.8
b
T
A
–
4
.1
b
T
A
= 70 °C
I
DM
I
AS
Pulsed Drain Current
– 25
Avalanche Current Pulse
Single Pulse Avalanche Energy
– 4
.
5
10
.
1
L = 0.1 mH
T
C
= 25 °C
E
AS
mJ
A
6
.
9
a
3.5
b
I
S
Continuous Source-Drain Diode Current
T
A
= 25 °C
10
.
4
a
6
.
6
a
2
.1
b
1.1
b
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
P
D
Maximum Power Dissipation
W
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
b
33
40
R
thJA
Steady State
Steady State
°C/W
R
thJC
Maximum Junction-to-Case
0.98
1.2
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1″ x 1″ FR4 board.
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1
NTF2955PT1G
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0
V
,
I
D
= – 250 µA
I
D
= – 250 µA
Drain-Source Breakdown Voltage
– 60
V
V
DS
T
e
mperature Coefficient
68
mV/°C
V
GS(th)
T
e
mperature Coefficient
– 5.2
V
DS
= V
GS
, I
D
= – 250 µA
V
DS
= 0
V
,
V
GS
= ± 20 V
V
DS
= – 60
V
,
V
GS
= 0 V
DS
= – 60
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
=
–
5
V
,
V
GS
= – 10 V
V
GS
= – 10 V, I
D
= – 3 A
Gate-Source Threshold Voltage
Gate-Source Leakage
– 1.0
– 2.5
± 100
– 1
V
I
GSS
nA
I
DSS
I
D(on)
R
DS(on)
g
fs
Zero Gate Voltage Drain Current
On-State Drain Current
a
µA
A
V
– 10
– 25
20
0.0
55
0.0
6
5
Drain-Source On-State Resistance
a
S
V
GS
= – 4.5 V, I
D
= – 2 A
V
DS
= – 15 V, I
D
= – 5 A
Forward
T
r
ansconductance
a
Dynamic
b
C
iss
C
oss
C
rss
Input Capacitance
1500
200
150
38
V
DS
= – 25
V
,
V
GS
= 0
V
, f = 1
M
Hz
V
DS
= – 30 V, V
GS
= – 10 V, I
D
= – 5 A
V
DS
= – 30 V, V
GS
= – 4.5 V, I
D
= – 5 A
f = 1 MHz
Output Capacitance
Reverse
T
r
ansfer Capacitance
pF
56
30
Q
g
T
o
tal Gate Charge
19
nC
Q
gs
Q
gd
R
g
Gate-Source Charge
9
Gate-Drain Charge
10
Gate Resistance
5.2
10
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-On Delay Time
15
15
V
DD
= – 2 V, R
L
= 2
Ω
I
D
≅
–
5
A, V
GEN
= – 10 V, R
g
= 1
Ω
Rise Time
7
ns
T
u
rn-Off Delay Time
70
110
60
Fall Time
40
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
I
S
= – 3 A
– 6
.
9
– 15
– 1.5
68
A
– 1
45
59
29
16
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
120
I
F
= – 5 A, di/dt = 10 A/µs, T
J
= 25 °C
ns
t
b
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
NTF2955PT1G
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
16
12
8
10
V
= 10 thr
u
6
V
GS
8
V
= 5
V
GS
6
4
V
= 4
V
GS
T
= 125 °C
= 25 °C
C
4
2
T
C
V
= 3
V
GS
T
= – 55 °C
4
C
0
0
0
0
0
1
2
3
4
5
0
0
0
1
2
3
5
V
– Drain-to-So
u
rce
V
oltage (
V
)
V
– Gate-to-So
u
rce
V
oltage (
V
)
GS
DS
Output Characteristics
Transfer Characteristics
10
8
100
8
0
60
40
20
0
T
= – 55 °C
C
T
= 25 °C
C
6
T
= 125 °C
C
4
T
= 125 °C
= 25 °C
C
2
T
C
T
= – 55 °C
4
C
0
12
24
36
4
8
60
1
2
3
5
I
– Drain C
u
rrent (A)
V
– Gate-to-So
u
rce
V
oltage (
V
)
D
GS
Transfer Characteristics
Transconductance
0.
0
9
0.0
8
0.0
7
0.0
6
0.0
5
0.00
2000
1600
1200
800
400
0
C
iss
V
= 4.5
V
= 10
V
GS
GS
V
C
oss
C
rss
20
40
60
8
0
100
10
20
30
40
50
60
V
– Drain-to-So
u
rce
V
oltage (
V
)
I
– Drain C
u
rrent (A)
DS
D
On-Resistance vs. Drain Current
Capacitance
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3
NTF2955PT1G
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
2.0
1.7
1.4
1.1
0.
8
0.5
10
I
=
2 A
I
= 5 A
D
D
8
V
= 10
V
GS
V
= 20
V
DS
6
V
= 30
V
DS
V
= 4.5
V
GS
4
2
0
0
20
Q
40
60
8
0
1.2
1
– 50
– 25
0
T
25
50
75
100 125 150
– Total Gate Charge (nC)
g
– J
u
nction
T
e
mperat
u
re (°C)
J
Gate Charge
On-Resistance vs. Gate-to-Source Voltage
100
10
1
0.10
0.0
8
0.06
0.04
0.02
0.00
I
= 2 A
D
T
= 150 °C
T
= 25 °C
J
J
T
J
= 150 °C
T
J
= 25 °C
0
2
4
6
8
10
0.0
0.3
0.6
0.9
V
–
Gate-to-So
u
rce
V
oltage (
V
)
V
– So
u
rce-to-Drain
V
oltage (
V
)
GS
SD
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1000
75
72
69
66
63
60
I
= 10 mA
D
100
10
I
(A) at T
= 25 °C
J
A
V
1
I
(A) at T
= 150 °C
J
A
V
0.1
0.0001
0.001
0.01
– (s)
0.1
– 50
– 25
0
25
50
75
100 125
150
T
T
– Temperat
u
re (°C)
in
J
Single Pulse Avalanche Current Capability vs. Time
Drain-Source Breakdown Voltage vs. Junction Temperature
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4
NTF2955PT1G
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
12
1
0
8
0.
8
0.5
I
= 250
µ
A
D
I
= 1 mA
D
6
0.2
4
– 0.1
2
0
– 0.4
0
25
50
75
100
125
150
– 50
– 25
0
25
50
75
100 125 150
T
– Temperat
u
re(°C)
T
– Case
T
e
mperat
u
re (°C)
J
C
Threshold Voltage
Max. Drain Current vs. Case Temperature
14
12
10
8
100
Limited
b
y R
*
DS(on)
10
µ
s
10
100
µ
s
5
6
1 ms
10 ms
100 ms, DC
4
1
2
B
V
DSS
Limited
T
= 25 °C
C
Single P
u
lse
0
0.1
0.1
1
10
100
0
25
50
75
100
125
150
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
T
– Temperat
u
re (°C)
J
*
V
> minim
u
m
V
at
w
hich R
is specified
GS
GS
DS(on)
Power Derating, Junction-to-Case
Safe Operating Area, Junction-to-Case
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P
u
lse
0.01
10
-4
-3
-2
-1
10
10
S
qu
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
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5
NTF2955PT1G
SOT-223 (HIGH VOLTAGE)
B
D
3
A
0.0
8
(0.003)
B1
C
M
M
0.10 (0.004)
C B
A
4
3
H
E
M
M
0.20 (0.00
8
) C
A
L1
4 x L
1
2
3
3 x B
0.10 (0.004)
C B
e
θ
M
M
e1
4 x C
MILLIMETERS
INCHES
DIM.
A
MIN.
1.55
0.65
2.95
0.25
6.30
3.30
MAX.
1.80
0.85
3.15
0.35
6.70
3.70
MIN.
0.061
0.026
0.116
0.010
0.248
0.130
MAX.
0.071
0.033
0.124
0.014
0.264
0.146
B
B1
C
D
E
e
2.30 BSC
4.60 BSC
0.0905 BSC
0.181 BSC
e1
H
6.71
0.91
7.29
–
0.264
0.036
0.287
–
L
L1
θ
0.061 BSC
0.0024 BSC
–
10′
–
10′
ECN: S-82109-Rev. A, 15-Sep-08
DWG: 5969
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension do not include mold flash.
4. Outline conforms to JEDEC outline TO-261AA.
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6
NTF2955PT1G
Disclaimer
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data are subject to change without notice.
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T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
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o
t
he maximum extent permitted by applicable law on
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aiwan VBsemi
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including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
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aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
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Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
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aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
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aiwan VBsemi products are not intended for use in medical, life saving,
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