VBsemi-Elec-NTS4101PT1G-VB
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NTS4101PT1G
P-Channel
20
V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
V
DS
(V)
R
DS(on)
(
)
I
D
(A)
c
–
3
.
1
Q
g
(Typ.)
Definition
0
.
080
at V
GS
= – 4.5 V
0.100
at V
GS
= – 2.5 V
•
•
•
T
r
enchFET
®
Power MOSFET
100 % R
g
T
e
sted
4.3 nC
–
20
–
2
.
3
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
•
Load Switch
•
DC/DC Converters
S
SOT-323
SC-70
G
S
1
2
G
3
D
D
P-Channel MOSFET
Top
V
ie
w
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
– 20
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
±
12
T
C
= 25 °C
C
= 70 °C
–
3
.
1
T
–
2
.
1
Continuous Drain Current (T
J
= 150 °C)
I
D
– 1.4
a, b
– 1.1
a, b
– 6
T
A
= 25 °C
T
A
= 70 °C
A
I
DM
I
S
Pulsed Drain Current
T
C
= 25 °C
T
A
= 25 °C
C
= 25 °C
– 0.4
Continuous Source-Drain Diode Current
– 0.3
T
0.5
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
0.3
P
D
Maximum Power Dissipation
W
0.4
a, b
0.3
a, b
– 50 to 150
260
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
Soldering Recommendations (Peak
T
e
mperature)
°C
Notes:
a. Surface mounted on 1″ x 1″ FR4 board.
b. t = 10 s.
c. Based on T
C
= 25 °C.
服务热线：400-655-8788
1
NTS4101PT1G
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a, b
Symbol
R
thJA
Typical
250
Maximum
Unit
t
10 s
300
270
°C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
225
Notes:
a. Surface
mounted on 1″ x 1″ FR4 board.
b. Maximum
under steady state conditions is 360 °C/W.
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
– 20
V
V
GS
= 0
V
,
I
D
= – 250 µA
I
D
= – 250 µA
– 14
2.4
V
DS
T
e
mperature Coefficient
mV/°C
V
GS(th)
T
e
mperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
– 0.45
– 1.5
± 100
– 1
V
V
DS
= V
GS
, I
D
= – 250 µA
V
DS
= 0
V
,
V
GS
= ± 8 V
V
DS
= – 20
V
,
V
GS
= 0 V
I
GSS
nA
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
µA
A
– 10
V
DS
= – 20
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
– 5
V
,
V
GS
= – 4.5 V
I
D(on)
– 2
V
GS
= – 4.5
V
,
I
D
= – 1.4 A
0.080
0.120
0.1
4
0
5
Drain-Source On-State Resistance
a
R
DS(on)
g
fs
V
GS
= – 2.5
V
,
I
D
= – 1.2 A
V
GS
= – 1.8
V
,
I
D
= – 0.3 A
V
DS
= – 5
V
,
I
D
= – 1.4 A
Forward
T
r
ansconductance
a
Dynamic
b
S
Input Capacitance
C
iss
C
oss
C
rss
272
55
44
4.3
2.7
0.7
1.0
7
Output Capacitance
Reverse
T
r
ansfer Capacitance
V
DS
= – 10
V
,
V
GS
= 0
V
, f = 1
M
Hz
pF
6.5
4.1
V
V
DS
= – 10
V
,
V
GS
= – 4.5
V
,
I
D
= – 1.4 A
DS
= – 10
V
,
V
GS
= – 2.5
V
,
I
D
= – 1.4 A
f = 1 MHz
T
o
tal Gate Charge
Q
g
nC
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
T
u
rn-On Delay Time
Rise Time
Q
gs
Q
gd
R
g
1.4
14
20
30
35
18
10
20
27
14
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
12
20
23
9
V
DD
= – 10
V
,
R
L
= 9.1
I
D
– 1.1 A, V
GEN
= – 4.5
V
,
R
g
= 1
T
u
rn-Off DelayTime
Fall Time
ns
T
u
rn-On Delay Time
Rise Time
5
10
18
7
V
DD
= – 10
V
,
R
L
= 9.1
I
D
– 1.1 A, V
GEN
= – 8
V
,
R
g
= 1
T
u
rn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
I
S
I
SM
V
SD
t
rr
–
2
.4
– 6
T
C
= 25 °C
I
F
= – 0.7 A
A
Body Diode Voltage
– 0.8
18
7
– 1.2
27
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
ns
nC
Q
rr
t
a
14
I
F
= – 0.7 A, dI/dt = 100 A/µs, T
J
= 25 °C
7
ns
Reverse Recovery Rise Time
t
b
11
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
NTS4101PT1G
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
6.0
4.5
3.0
1.5
0.0
1.0
0.8
0.6
0.4
0.2
0.0
V
= 5 V th r u 3 V
GS
V
= 2 . 5 V
GS
V
= 2V
GS
GS
V
= 1.5 V
T
= 25 °C
C
T
= 125 °C
C
V
= 1 V
GS
T
= – 55 °C
C
0.0
0.5
1.0
1.5
2.0
6.0
5
0.0
0.3
0.6
0.9
1.2
1.5
V
GS
– Gate-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
Transfer Characteristics
Output Characteristics
0.
1
5
0.
1
3
0.11
0.09
0.07
0.0
5
600
450
300
150
0
V
= 1.8 V
GS
C
iss
V
= 2.5 V
GS
V
= 4.5 V
GS
C
oss
C
rss
0
5
10
15
20
0.0
1.5
3.0
I
D
– Drain Current (A)
4.5
V
DS
– Drain-to-Source Voltage (V)
Capacitance
On-Resistance vs. Drain Current
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
4.5
3.6
2.7
1.8
0.9
0.0
I
= 1.4 A
V
= 2.5 V
D
GS
I
= 1.4 A
D
V
= 10 V
DS
V
= 4.5 V
GS
V
= 5 V
DS
V
= 16 V
DS
– 50
– 25
0
25
T
J
– Junction Temperature (°C)
On-Resistance vs. Junction Temperature
50
75
100 125 150
0
1
2
3
4
Q
g
– Total Gate Charge (nC)
Gate Charge
服务热线：400-655-8788
3
NTS4101PT1G
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.32
10
I
= 1.4 A
D
0.24
0.16
0.08
0.00
T
= 150 °C
T
= 25 °C
T
T
= 125 °C
= 25 °C
J
J
J
J
1
0.1
1
2
3
4
5
0.0
0.3
0.6
0.9
1.2
1.5
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.75
0.65
0.55
0.45
0.35
0.25
10
8
I
= 250 μA
D
6
4
2
0
– 50
– 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
100
Time (s)
Single Pulse Power, Junction-to-Ambient
T
J
– Temperature (°C)
Threshold Voltage
10
*
Limited by R
DS(on)
100 μs
1 ms
1
10 ms
0.1
T
= 25 °C
A
Single Pulse
100 ms
1 s
10 s, DC
BVDSS Limited
10
0.01
100
0.1
1
V
DS
– Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
服务热线：400-655-8788
4
NTS4101PT1G
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1.6
1.2
0.8
0.4
0.0
0
25
50
75
100
125
150
T
C
– Case Temperature (°C)
Current Derating*
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.45
0.36
0.27
0.18
0.09
0.00
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
– Case Temperature (°C)
T
A
– Ambient Temperature (°C)
Power, Junction-to-Ambient
Power, Junction-to-Case
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
服务热线：400-655-8788
5
NTS4101PT1G
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
P
DM
0.05
t
1
0.02
t
2
t
1
1. Duty Cycle, D =
t
2
2. Per Unit Base = R
= 360 °C/W
thJA
(t)
DM thJA
3. T
– T
= P
Z
JM
A
Single Pulse
0.01
4. Surface Mounted
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
-4
0.01
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
服务热线：400-655-8788
6
NTS4101PT1G
SCĆ70: 3ĆLEADS
MILLIMETERS
INCHES
Dim Min
Nom Max Min Nom
Max
3
0.90
–
1.10
0.10
1.00
0.40
0.25
2.20
2.40
1.35
0.035
–
0.043
0.004
0.039
0.016
0.010
0.087
0.094
0.053
A
A
1
A
2
b
c
D
E
E
1
E
E
1
–
–
–
–
0.80
–
0.031
0.010
0.004
0.071
0.071
0.045
–
1
2
0.25
–
–
0.10
–
–
e
b
1.80
2.00
2.10
1.25
0.65BSC
1.30
0.20
7
_
Nom
0.079
0.083
0.049
0.026BSC
0.051
0.008
7
_
Nom
e
1
D
1.80
c
1.15
e
e
1
L
A
2
A
1.20
1.40
0.30
0.047
0.004
0.055
0.012
L
0.10
0.08
c
A
1
ECN: S-03946—Rev. C, 09-Jul-01
DWG: 5549
服务热线：400-655-8788
7
NTS4101PT1G
RECOMMENDED MINIMUM
P
A
DS FOR SC-70: 3-Lead
0.025
0.022
(0.622)
(0.559)
0.027
(0.686)
0.071
(1.803)
Recommended Minimum Pads
Dimensions in Inches/(mm)
服务热线：400-655-8788
8
NTS4101PT1G
Disclaimer
All products due to improve reliability, function or design or for other reasons, product specifications and
data are subject to change without notice.
Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their
representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of
any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
T
aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
including a particular purpose, non-infringement and merchantability guarantee.
Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
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aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
Unless expressly stated in writing,
T
aiwan VBsemi products are not intended for use in medical, life saving,
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T
aiwan VBsemi such applications using client did not express their
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aiwan VBsemi people who are related to product design applications and
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Material Category Policy
Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be
RoHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) – modification, unless otherwise specified as
inconsistent.(www.VBsemi.com)
Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
2011/65 /.
Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as
halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products
conform to confirm compliance with IEC 61249-2-21 standard level JS709A.
