VBsemi-Elec-NUD3160LT-VB
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NUD3160LT
N-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
V
DS
(V)
R
DS(on)
(
Ω
)
I
D
(mA)
Definition
2.8 at V
GS
= 10 V
•
•
•
•
•
•
Low Threshold: 2 V (typ.)
Low Input Capacitance: 25 pF
Fast Switching Speed: 25 ns
Low Input and Output Leakage
TrenchFET
®
Power MOSFET
1
200V ESD Protection
60
250
SOT-23
G
S
1
•
Compliant to RoHS Directive 2002/95/EC
3
D
BENEFITS
2
•
•
•
•
•
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
T
o
p View
D
APPLICATIONS
•
Direct Logic-Level Interface: TTL/CMOS
•
Drivers: Relays, Solenoids, Lamps, Hammers, Display,
Memories, Transistors, etc.
G
•
•
Battery Operated Systems
Solid-State Relays
S
N
-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
60
Unit
V
DS
V
GS
Drain-Source Voltage
Gate-Source Voltage
V
± 20
T
A
= 25 °C
250
Continuous Drain Current (T
J
= 150 °C)
b
Pulsed Drain Current
a
I
D
T
A
= 100 °C
150
mA
I
DM
P
D
800
T
A
= 25 °C
0.30
Power Dissipation
b
W
T
A
= 100 °C
0.13
Maximum Junction-to-Ambient
b
350
°C/W
°C
R
thJA
T
J,
T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 150
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board.
* Pb containing terminations are not RoHS compliant, exemptions may appl
y
.
1
NUD3160LT
SPECIFICATIONS
T =
25 °C, unless otherwise noted
A
Limits
Typ.
a
Parameter
Static
Symbol
Test Conditions
Min.
Max.
Unit
V
DS
V
GS
= 0
V
,
I
D
= 10 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0
V
,
V
GS
= ±
20 V
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
60
1
V
V
GS(th)
2.5
± 10
1
µA
nA
V
DS
= 0
V
,
V
GS
= ±
15 V
DS
= 0
V
,
V
GS
= ± 10 V
DS
= 0
V
,
V
GS
= ± 10
V
,
T
J
= 85 °C
DS
= 0
V
,
V
GS
= ± 5 V
V
DS
= 60
V
,
V
GS
= 0 V
I
GSS
V
Gate-Body Leakage
± 150
± 1000
± 100
1
V
V
I
DSS
Zero Gate Voltage Drain Current
On-State Drain Current
a
µA
mA
Ω
V
DS
= 60
V
,
V
GS
= 0 V , T
J
= 125 °C
V
GS
= 10
V
,
V
DS
= 7.5 V
500
500
300
I
D(on)
V
GS
= 4.5
V
,
V
DS
= 10 V
V
GS
= 10
V
,
I
D
= 200 mA
GS
= 4.5
V
,
I
D
= 150 mA
3.3
3.8
2.8
3.1
Drain-Source On-Resistance
a
R
DS(on)
V
Forward
T
r
ansconductance
a
Diode Forward Voltage
g
fs
V
DS
= 10
V
,
I
D
= 100 mA
I
S
= 100 mA, V
GS
= 0 V
100
mS
V
V
SD
1.3
0.6
Dynamic
a
V
DS
= 10
V
,
V
GS
= 4.5 V
Q
g
T
o
tal Gate Charge
0.4
nC
pF
I
D
≅
150 mA
C
iss
C
oss
C
rss
Input Capacitance
25
5
V
DS
= 25
V
,
V
GS
= 0 V
f = 1 MHz
Output Capacitance
Reverse
T
r
ansfer Capacitance
2.0
Switching
a, b, c
T
u
rn-On Time
T
u
rn-Off Time
t
d(on)
t
d(off)
20
30
V
DD
= 30
V
,
R
L
= 150
Ω
I
D
≅
200 mA, V
GEN
= 10
V
,
R
G
= 10
Ω
ns
Notes:
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW
≤
300 µs duty cycle
≤
2 %.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
NUD3160LT
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1.0
0.8
0.6
0.4
0.2
0.0
1200
900
600
300
0
7 V
6 V
V
GS
= 10 V
T
J
= – 55 °C
5 V
25 °C
125 °C
4 V
3 V
0
1
2
3
4
5
0
1
2
3
4
5
6
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
40
32
24
16
8
6.0
5.5
5.0
4.5
3.0
2.5
2.0
1.5
1.0
V
= 0 V
GS
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
rss
0
0
10
20
30
40
50
0
200
400
600
800
1000
I
D
– Drain Current (mA)
V
DS
– Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
7
6
5
4
3
2
1
0
2.0
1.6
1.2
0.8
0.4
0.0
V
GS
= 10 V at 500 mA
V
= 10 V
= 250 mA
DS
I
D
V
= 4.5 V
GS
at 200 mA
0.0
0.1
0.2
0.3
0.4
0.5
0.6
– 50
– 25
0
25
50
75
100 125 150
T
J
– Junction
T
e
mperature (°C)
Q
g
–
T
o
tal Gate Charge (nC)
On-Resistance vs. Junction Temperature
Gate Charge
3
NUD3160LT
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
5
4
3
2
1
0
1000
V
= 0 V
GS
100
T
= 125 °C
J
I
D
= 200 mA
I =
500 mA
D
10
1
T
= 25 °C
J
T
J
= – 55 °C
0
2
4
6
8
10
0.0
0.3
0.6
0.9
1.2
1.5
V
GS
– Gate-to-Source Voltage (V)
V
SD
– Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-Source Voltage
0.4
0.2
3
2.5
I
D
= 250 µA
2
0.0
1.5
– 0.2
– 0.4
– 0.6
– 0.8
1
0.5
0
T
A
= 25 °C
– 50
– 25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
600
T
J
– Junction
T
e
mperature (°C)
Time (s)
Threshold Voltage Variance Over Temperature
Single Pulse Power, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
0.02
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 350 °C/W
thJA
(t)
3. T
– T
= P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
4
NUD3160LT
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
No
t
e
•
The characteristics shown in the two graphs
– Normalized Transient Thermal Impedance Junction-to-Ambient
– Normalized Transient Thermal Impedance Junction-to-Foot
25
°
C
(
25
°C)
)
(
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the
part
mounted on printed circuit board – FR4, size 1″ x 1″ x 0.062″, double sided with 2 oz. copper, 100 % on both sides. The part ca
pab
ili
can widely vary depending on actual application parameters and operating
co
nditio
ns.
t
i
es
5
NUD3160LT
SOT-23 (TO-236): 3-LEAD
b
3
E
1
E
1
2
e
S
e
1
D
0.10 mm
0.004″
C
C
0.25 mm
q
A
2
A
G
au
ge Pl
a
ne
S
e
a
ting Pl
a
ne
S
e
a
ting Pl
a
ne
C
A
1
L
1
L
MILLIMETERS
INCHES
Dim
Min
0.89
0.01
Max
1.12
0.10
Min
0.0
3
5
0.0004
Max
0.044
0.004
A
A
1
A
2
0.88
0.
3
5
0.085
2.80
2.10
1.20
1.02
0.50
0.18
3
.04
2.64
1.40
0.0
3
46
0.014
0.00
3
0.110
0.08
3
0.047
0.040
0.020
0.007
0.120
0.104
0.055
b
c
D
E
E
1
e
0.95 BSC
1.90 BSC
0.0
3
74 Ref
e
1
0.0748 Ref
L
0.40
0.60
8°
0.016
0.024
8°
L
1
0.64 Ref
0.50 Ref
0.025 Ref
0.020 Ref
S
q
3
°
3
°
ECN: S-0
3
946-Rev. K, 09-Jul-01
DWG: 5479
6
NUD3160LT
RECOMMENDED MINIMUM
P
A
DS FOR SO
T
–
23
0.037
0.022
(0.950)
(0.559)
0.053
(1.341)
0.097
(2.459)
Recommended Minimum Pads
Dimensions in Inches/(mm)
7
NUD3160LT
Disclaimer
All products due to improve reliability, function or design or for other reasons, product specifications and
data are subject to change
without notice.
T
a
iwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their
representatives (collectively, the “
T
a
iwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to
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a
iwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of
any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
T
a
iwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
including a particular purpose, non-infringement and merchantability guarantee.
Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
a
iwan demand that the
T
a
iwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
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a
iwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
Unless expressly stated in writing,
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a
iwan VBsemi products are not intended for use in medical, life saving,
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Material Category Policy
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) – modification, unless otherwise specified as inconsistent.(www.VBsemi.
tw
)
Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
2011/65 /.
Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as
halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products
conform to confirm compliance with IEC 61249-2-21 standard level JS709A.
8
