VBsemi-Elec-NVTR4502PT1G-VB
| Part # | VBsemi-Elec-NVTR4502PT1G-VB |
Download  | VBsemi-Elec-NVTR4502PT1G-VB |
NVTR4502PT1G
P-Channel 30 V (D-S) MOSFET
FEATURES
•
TrenchFET
®
Power MOSFET
PRODUCT SUMMARY
D
(A)
a
–
5
.6
–
5
•
100 % R
g
Tested
V
DS
(V)
R
DS(on)
(
) Typ.
0.0
46
at V
GS
= – 10 V
0.04
9
at V
GS
= – 6 V
0.05
4
at V
GS
= – 4.5 V
Q
g
(Typ.)
I
– 30
11.4 nC
APPLICATIONS
–
4
.5
•
For Mobile Computing
– Load Switch
– Notebook Adaptor Switch
– DC/DC Converter
S
(SOT-23)
TO-236
G
G
S
1
2
3
D
D
Top
V
ie
w
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
– 30
Unit
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
V
GS
± 20
T
T
T
C
= 25 °C
C
= 70 °C
A
= 25 °C
–
5
.6
–
5
.1
Continuous Drain Current (T
J
= 150 °C)
I
D
– 5.4
b,c
– 4.3
b,c
– 18
T
A
= 70 °C
A
Pulsed Drain Current (t = 100 µs)
I
DM
I
S
T
C
= 25 °C
– 2.1
– 1
b,c
Continous Source-Drain Diode Current
T
A
= 25 °C
T
C
= 25 °C
2.5
T
C
= 70 °C
A
= 25 °C
1.6
Maximum Power Dissipation
P
D
W
1.25
b,c
0.8
b,c
– 55 to 150
T
T
A
= 70 °C
T
J
, T
stg
°C
Operating Junction and Storage
T
e
mperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b,d
Symbol
Typical
75
Maximum
100
Unit
R
thJA
R
thJF
t
5 s
Steady State
°C/W
Maximum Junction-to-Foot (Drain)
40
50
Notes:
a. Based
on T
C
= 25 °C.
b. Surface
mounted on 1″ x 1″ FR4 board.
c. t
= 5 s.
d. Maximum
under steady state conditions is 166 °C/W.
服务热线：400-655-8788
1
NVTR4502PT1G
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0
V
,
I
D
= – 250 µA
I
D
= – 250 µA
Drain-Source Breakdown Voltage
– 30
V
V
DS
T
e
mperature Coefficient
– 19
4
mV/°C
V
GS(th)
T
e
mperature Coefficient
V
DS
= V
GS
, I
D
= – 250 µA
V
DS
= 0
V
,
V
GS
= ± 20 V
V
DS
= – 30
V
,
V
GS
= 0 V
Gate-Source Threshold Voltage
Gate-Source Leakage
– 0.5
– 2.0
± 100
– 1
V
I
GSS
nA
I
DSS
Zero Gate Voltage Drain Current
On-State Drain Current
a
µA
A
V
DS
= – 30
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
– 5
V
,
V
GS
= – 10 V
V
GS
=
– 10 V, I
D
= –
4
.4 A
V
GS
=
– 6 V, I
D
= –
4
A
– 5
I
D(on)
– 2
.
5
0.0
4
6
0.0
4
9
0.0
5
4
18
Drain-Source On-State Resistance
a
Forward
T
r
ansconductance
a
R
DS(on)
V
GS
=
– 4.5 V, I
D
= –
3
.6 A
V
DS
= – 15 V, I
D
= –
3
.4 A
g
fs
S
Dynamic
b
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
1295
150
130
24
V
DS
= – 15
V
,
V
GS
= 0
V
, f = 1
M
Hz
pF
V
DS
= – 15
V
,
V
GS
= – 10
V
,
I
D
= – 5.4 A
36
17
Q
g
T
o
tal Gate Charge
11.4
3.4
3.8
7.7
13
nC
Q
gs
Q
gd
R
g
Gate-Source Charge
V
DS
= – 15
V
,
V
GS
= – 4.5
V
,
I
D
= – 5.4 A
f = 1 MHz
Gate-Drain Charge
Gate Resistance
1.5
15.4
20
8
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-On Delay Time
Rise Time
4
V
DD
= – 15
V
,
R
L
= 3.5
I
D
– 4.3 A, V
GEN
= – 10
V
,
R
g
= 1
T
u
rn-Off Delay Time
38
57
12
42
24
45
20
Fall Time
6
ns
T
u
rn-On Delay Time
28
Rise Time
16
V
DD
= – 15
V
,
R
L
= 3.5
I
D
– 4.3 A, V
GEN
= – 4.5
V
,
R
g
= 1
T
u
rn-Off Delay Time
30
Fall Time
10
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current (t = 100 µs)
Body Diode Voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
– 2.1
– 80
– 1.2
23
A
I
S
= – 4.3 A, V
GS
0 V
– 0.8
15
7
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
14
I
F
= – 4.3 A, dI/dt = 100 A/µs, T
J
= 25 °C
8
ns
t
b
7
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
NVTR4502PT1G
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
2
50
V
GS
= 10 V thru 5 V
40
1.5
V
GS
= 4.5 V
30
20
10
0
V
GS
= 4 V
1
0.5
0
T
C
= 25
°
C
T
C
= 125
°
C
V
GS
= 3 V
T
C
= – 55
°
C
0
0.5
1
1.5
2
0
0.6
1.2
1.8
2.4
3
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1800
1350
900
450
0
0.08
0.06
0.04
0.0
2
0
V
GS
= 4.5 V
V
GS
= 6 V
C
iss
V
GS
= 10 V
C
oss
C
rss
0
10
20
30
40
50
0
6
12
18
24
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.5
1.3
1.1
0.9
0.7
10
8
I
D
= 5.4 A
I
D
= 5.4 A
V
DS
= 8 V
V
GS
= 10 V, 6 V
V
DS
= 15 V
6
V
GS
= 4.5 V
4
V
DS
= 24 V
2
0
0
5
10
15
20
25
– 50
– 25
0
25
50
75
100 125 150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (
°
C)
Gate Charge
On-Resistance vs. Junction Temperature
服务热线：400-655-8788
3
NVTR4502PT1G
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
10
1
0.080
0.060
0.040
0.020
0.000
I
D
= 5.4 A
T
J
= 150
°
C
T
J
= 125
°
C
T
J
= 25
°
C
T
J
= 25
°
C
0.1
0.0
0.3
0.6
0.9
1.2
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
10
8
2
1.75
1.5
I
D
= 250 μA
6
4
1.25
1
2
T =
25 °C
A
0
– 50
– 25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
1000
Time (s)
T
J
– Temperature (
°
C)
Threshold Voltage
Single Pulse Power (Junction-to-Ambient)
10
Limited by R
DS(on)
*
5
100 μs
1 ms
1
0.1
10 ms
100 ms
10s,
1 s
DC
0.01
T
A
= 25
°
C
Single Pulse
BVDSS Limited
10
0.001
0.1
1
100
V
DS
– Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
服务热线：400-655-8788
4
NVTR4502PT1G
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
5
.8
4.
6
3
.4
2.2
0
0
25
50
75
100
125
150
T
C
– Case Temperature (
°
C)
Current Derating*
3.1
2.48
1.86
1.24
0.62
0
1.0
0.8
0.5
0.3
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
– Case Temperature (
°
C)
T
A
– Ambient Temperature (
°
C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
服务热线：400-655-8788
5
NVTR4502PT1G
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
N
otes:
P
DM
0.05
t
1
0.02
t
2
t
t
1
2
1. D
u
ty Cycle, D =
2. Per Unit Base = R
= 166 °C/
W
thJA
(t)
= P
Z
3. T
– T
A
DM thJA
JM
4. S
u
rface Mo
u
nted
Single P
u
lse
0.01
-4
-3
-2
-1
10
10
10
10
1
100
1000
10
S
qu
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P
u
lse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
S
qu
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
服务热线：400-655-8788
6
NVTR4502PT1G
SOT-23 (TO-236): 3-LEAD
b
3
E
1
E
1
2
e
S
e
1
D
0.10 mm
0.004″
C
C
0.25 mm
q
A
2
A
G
au
ge Pl
a
ne
S
e
a
ting Pl
a
ne
S
e
a
ting Pl
a
ne
C
A
1
L
1
L
MILLIMETERS
INCHES
Dim
Min
0.89
0.01
Max
1.12
0.10
Min
0.0
3
5
0.0004
Max
0.044
0.004
A
A
1
A
2
0.88
0.
3
5
0.085
2.80
2.10
1.20
1.02
0.50
0.18
3
.04
2.64
1.40
0.0
3
46
0.014
0.00
3
0.110
0.08
3
0.047
0.040
0.020
0.007
0.120
0.104
0.055
b
c
D
E
E
1
e
0.95 BSC
1.90 BSC
0.0
3
74 Ref
e
1
0.0748 Ref
L
0.40
0.60
8°
0.016
0.024
8°
L
1
0.64 Ref
0.50 Ref
0.025 Ref
0.020 Ref
S
q
3
°
3
°
ECN: S-0
3
946-Rev. K, 09-Jul-01
DWG: 5479
服务热线：400-655-8788
7
NVTR4502PT1G
RECOMMENDED MINIMUM
P
A
DS FOR SO
T
–
23
0.037
0.022
(0.950)
(0.559)
0.053
(1.341)
0.097
(2.459)
Recommended Minimum Pads
Dimensions in Inches/(mm)
服务热线：400-655-8788
8
NVTR4502PT1G
Disclaimer
All products due to improve reliability, function or design or for other reasons, product specifications and
data are subject to change without notice.
Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their
representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
product.(www.VBsemi.com)
Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of
any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
T
aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
including a particular purpose, non-infringement and merchantability guarantee.
Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
T
aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
Unless expressly stated in writing,
T
aiwan VBsemi products are not intended for use in medical, life saving,
or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal
injury or death, use or sale of products used in
T
aiwan VBsemi such applications using client did not express their
own risk. Contact your authorized
T
aiwan VBsemi people who are related to product design applications and
other terms and conditions in writing.
The information provided in this document and the company’s products without a license, express or implied,
by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product
names and trademarks referred to herein are trademarks of their respective representatives will be all.
Material Category Policy
Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be
RoHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) – modification, unless otherwise specified as inconsistent.(www.VBsemi.com)
Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
2011/65 /.
Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as
halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products
conform to confirm compliance with IEC 61249-2-21 standard level JS709A.
