VBsemi-Elec-P120NF10-VB
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P120NF10
N-Channel 100-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V
DS
(V)
FEATURES
•
•
•
T
r
enchFET
®
Power MOSFET
100
175 °C Maximum Junction
T
e
mperature
Compliant to RoHS Directive 2002/95/EC
R
DS(on)
(
) at V
GS
= 10 V
R
DS(on)
(
) at V
GS
= 4.5 V
0.009
0.020
100
I
D
(A)
Configuration
Single
TO-220AB
D
G
S
N-Channel MO
S
FET
G D S
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
100
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
20
T
C
= 25 °C
100
75
a
I
D
Continuous Drain Current (T
J
= 150 °C)
T
C
= 125 °C
A
I
DM
I
AS
300
Pulsed Drain Current
Avalanche Current
75
L = 0.1 mH
Single Pulse Avalanche Energy
b
mJ
E
AS
280
T
C
= 25 °C (TO-220AB and TO-263)
250
c
3.75
– 55 to 175
Maximum Power Dissipation
b
P
D
W
T
A
= 25 °C (TO-263)
d
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
R
thJA
R
thJC
Limit
40
Unit
PCB Mount (TO-263)
d
Free Air (TO-220AB)
Junction-to-Ambient
62.5
0.6
°C/W
Junction-to-Case
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
1
P120NF10
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
V
GS(th)
I
GSS
V
GS
= 0
V
,
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
100
2
V
4
V
DS
= 0
V
,
V
GS
=
20 V
100
1
nA
V
DS
= 100
V
,
V
GS
= 0 V
I
DSS
V
DS
= 100
V
,
V
GS
= 0
V
,
T
J
= 125 °C
Zero Gate Voltage Drain Current
On-State Drain Current
a
50
µA
A
V
DS
= 100
V
,
V
GS
= 0
V
,
T
J
= 175 °C
DS
=
≥
5
V
,
V
GS
= 10 V
250
I
D(on)
V
120
V
GS
= 10
V
,
I
D
= 30 A
0.00
9
0.0
2
0
0.023
0.030
V
GS
=
4.5
V, I
D
= 20 A
Drain-Source On-State Resistance
a
R
DS(on)
Ω
V
GS
= 10
V
,
I
D
= 30 A, T
J
= 125 °C
V
GS
= 10
V
,
I
D
= 30 A, T
J
= 175 °C
V
DS
= 15
V
,
I
D
= 30 A
Forward
T
r
ansconductance
a
Dynamic
b
g
fs
25
S
C
iss
C
oss
C
rss
Q
g
Input Capacitance
4700
665
265
105
17
V
GS
= 0
V
,
V
DS
= 25
V
, f = 1
M
Hz
Output Capacitance
Reverse
T
r
ansfer Capacitance
pF
nC
T
o
tal Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
T
u
rn-On Delay Time
c
Rise Time
c
160
Q
gs
Q
gd
t
d(on)
t
r
V
DS
= 50
V
,
V
GS
= 10
V
,
I
D
= 85 A
23
12
25
135
85
90
V
DD
= 50
V
,
R
L
= 0.6
Ω
ns
A
T
u
rn-Off DelayTime
c
Fall Time
c
I
D
≅
85 A, V
GEN
= 10
V
,
R
g
= 2.5
Ω
t
d(off)
t
f
55
130
195
Source-Drain Diode Ratings and Characteristics
T
C
= 25 °C
b
I
S
I
SM
Continuous Current
Pulsed Current
85
240
1.5
140
7
Forward Voltage
a
V
SD
t
rr
I
F
= 85 A, V
GS
= 0 V
1.0
85
V
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
ns
I
RM(REC)
Q
rr
I
F
= 50 A, dI/dt = 100 A/µs
4.5
A
µC
0.17
0.35
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
P120NF10
TYPICAL CHARACTERISTICS
T =
25 °C, unless otherwise noted
A
250
200
150
100
50
200
150
100
50
V
GS
= 10
V
thr
u
7
V
6
V
T
= 125 °C
C
4
V
– 55 °C
25 °C
3
V
0
0
0
1
2
3
4
5
6
0
2
4
6
8
10
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
Output Characteristics
Transfer Characteristics
250
200
150
100
50
0.020
0.015
0.010
0.005
0.000
T
= – 55 °C
C
25 °C
125 °C
V
GS
= 10
V
0
0
20
40
60
8
0
100
0
20
40
60
I –
Drain C
u
rrent (A)
D
8
0
100
120
I
D
– Drain C
u
rrent (A)
Transconductance
On-Resistance vs. Drain Current
20
16
12
8
10 000
8
000
6000
4000
2000
0
V
D
= 50
V
DS
=
8
5 A
I
C
iss
4
C
rss
C
oss
0
0
50
100
150
200
0
15
30
45
60
75
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
Q
g
–
T
o
tal Gate Charge (nC)
Capacitance
Gate Charge
3
服务热线：400-655-8788
P120NF10
TYPICAL CHARACTERISTICS
T =
25 °C, unless otherwise noted
A
2.5
2.0
1.5
1.0
0.5
0.0
100
V
D
= 10
V
GS
= 30 A
I
T =
150 °C
J
T =
25 °C
J
10
1
– 50
– 25
0
25
50
75 100
125 150 175
0
0.3
0.6
0.9
1.2
T
J
– J
u
nction
T
e
mperat
u
re (°C)
V
SD
– So
u
rce-to-Drain
V
oltage (
V
)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1000
100
140
130
120
110
100
90
I
D
= 250
µ
A
I
A
V
(A) at T
= 25 °C
A
10
1
I
A
V
(A) at T
= 150 °C
A
0.1
– 50
– 25
0
25
50
75 100
125 150 175
0.00001
0.0001
0.001
t
0.01
0.1
1
(s)
T –
J
u
nction
T
e
mperat
u
re (°C)
in
J
Avalanche Current vs. Time
T
J
– Drain-Source Breakdown
vs. Junction-Temperature
服务热线：400-655-8788
4
P120NF10
THERMAL RATINGS
100
1000
100
10
10
µ
s
8
0
60
40
20
0
100
µ
s
Limited
b
y R
DS(on)
*
1 ms
10 ms
100 ms, DC
1
T
= 25 °C
C
Single P
u
lse
0.1
0.1
0
25
50
75
100
125
150
175
1
10
100
1000
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
T
C
– Case
T
e
mperat
u
re (°C)
*
V
> minim
u
m
V
at
w
hich R
is specified
DS(on)
GS
GS
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
2
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P
u
lse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
S
qu
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
服务热线：400-655-8788
5
TO-220AB
MILLIMETERS
MIN.
INCHES
MIN. MAX.
A
E
DIM.
MAX.
4.65
1.01
1.73
0.61
15.49
12.70
10.51
2.67
5.28
1.40
6.48
2.92
14.02
3.82
3.94
3.00
F
A
b
4.25
0.69
1.20
0.36
14.85
12.19
10.04
2.41
4.88
1.14
6.09
2.41
13.35
3.32
3.54
2.60
0.167
0.027
0.047
0.014
0.585
0.480
0.395
0.095
0.192
0.045
0.240
0.095
0.526
0.131
0.139
0.102
0.183
0.040
0.068
0.024
0.610
0.500
0.414
0.105
0.208
0.055
0.255
0.115
0.552
0.150
0.155
0.118
Ø P
b(1)
c
D
D2
E
e
e(1)
F
1
3
2
H(1)
J(1)
L
*
M
L(1)
Ø P
Q
b(1)
ECN: T14-0413-Rev. P, 16-Jun-14
DWG: 5471
Note
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
C
b
e
J(1)
e(1)
D2
服务热线：400-655-8788
6
P120NF10
Disclaimer
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data are subject to change without notice.
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representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
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any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
T
aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
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Statement on certain types of applications are based on knowledge of the product is often used in a typical
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aiwan demand that the Taiwan VBsemi of. Statement on whether the
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product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
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aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
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aiwan VBsemi products are not intended for use in medical, life saving,
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RoHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
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Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
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7
