VBsemi-Elec-PHN210T-VB
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PHN210T
Dual N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
V
DS
(V)
R
DS(on)
(
Ω
)
I
D
(A)
Q
g
(Typ.)
Definition
TrenchFET
®
Power MOSFET
100 % UIS Tested
0.0
22
at V
GS
= 10 V
0.0
26
at V
GS
= 4.5 V
•
•
•
•
6
.8
6
.0
30
15
nC
100 % R
Tested
g
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
•
•
Set Top Box
Low Current DC/DC
SO-8
D
1
D
2
D
1
D
1
D
2
D
2
S
1
1
8
7
6
5
G
1
2
3
4
S
2
G
G
1
2
G
2
Top
V
ie
w
S
1
S
2
N
-Channel MOSFET
N
-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
A
Parameter
Symbol
V
DS
V
GS
Limit
30
± 20
Unit
Drain-Source Voltage
Gate-Source Voltage
V
6
.
8
a
5
.6
6
.2
b, c
5
.2
b, c
30
2.25
1.48
b, c
5
T
C
= 25 °C
T
C
= 70 °C
Continuous Drain Current (T
J
= 150 °C)
I
D
T
A
= 25 °C
T
A
= 70 °C
A
I
DM
I
S
Pulsed Drain Current
T
C
= 25 °C
Continuous Source-Drain Diode Current
T
A
= 25 °C
I
AS
E
AS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
mJ
W
1.25
2.7
T
C
= 25 °C
T
C
= 70 °C
A
= 25 °C
T
A
= 70 °C
1.77
P
D
Maximum Power Dissipation
1.78
b, c
1.14
b, c
T
T
J
, T
stg
°C
Operating Junction and Storage
T
e
mperature Range
– 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
a, c, d
t
≤
10 s
Steady State
R
thJA
R
thJF
58
70
°C/W
Maximum Junction-to-Foot (Drain)
38
45
Notes:
a. Package limited, T
C
= 25 °C.
b. Surface Mounted on 1″ x 1″ FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W.
服务热线：400-655-8788
1
PHN210T
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
V
Static
V
DS
Δ
V
DS
/T
J
Δ
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0
V
,
I
D
= 250 µA
I
D
= 250 µA
Drain-Source Breakdown Voltage
30
V
DS
T
e
mperature Coefficient
32
mV/°C
V
GS(th)
T
e
mperature Coefficient
– 5.0
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0
V
,
V
GS
= ± 20 V
V
DS
= 30
V
,
V
GS
= 0 V
DS
= 30
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
≥
5
V
,
V
GS
= 10 V
V
GS
=
10
V
,
I
D
= 5 A
Gate-Source Threshold Voltage
Gate-Source Leakage
1.
0
2.5
± 100
1
V
I
GSS
nA
I
DSS
I
D(on)
R
DS(on)
g
fs
Zero Gate Voltage Drain Current
µA
A
V
10
On-State Drain Current
a
10
0.0
2
2
0.0
26
16
Drain-Source On-State Resistance
a
Forward
T
r
ansconductance
a
Ω
V
GS
=
4.5
V
,
I
D
= 4 A
V
DS
= 10
V
,
I
D
= 5 A
S
Dynamic
b
C
iss
C
oss
C
rss
Input Capacitance
586
117
55
15
3.7
1.4
1.05
4.3
12
55
11
8
V
DS
= 15
V
,
V
GS
= 0
V
, f = 1
M
Hz
Output Capacitance
pF
Reverse
T
r
ansfer Capacitance
V
DS
= 15
V
,
V
GS
= 10
V
,
I
D
= 5 A
Q
g
T
o
tal Gate Charge
5.6
nC
Q
gs
Q
gd
R
g
Gate-Source Charge
V
DS
= 15
V
,
V
GS
= 4.5
V
,
I
D
= 5 A
f = 1 MHz
Gate-Drain Charge
Gate Resistance
0.8
8.6
24
100
22
16
8
Ω
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-On Delay Time
Rise Time
V
DD
= 15
V
,
R
L
= 3
Ω
I
D
≅
5 A, V
GEN
= 4.5
V
,
R
g
= 1
Ω
T
u
rn-Off Delay Time
Fall Time
ns
T
u
rn-On Delay Time
4
Rise Time
9
18
20
12
V
DD
= 15
V
,
R
L
= 3
Ω
I
D
≅
5 A, V
GEN
= 10
V
,
R
g
= 1
Ω
T
u
rn-Off Delay Time
10
6
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
2.25
24
A
I
S
= 2 A, V
GS
= 0 V
0.8
11
4
1.2
20
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
8
I
F
= 5 A, dI/dt = 100 A/µs, T
J
= 25 °C
7
ns
t
b
4
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
PHN210T
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
30
10
8
V
GS
= 10
V
thr
u
5
V
V
GS
= 4
V
24
1
8
12
6
6
4
T
C
= 25 °C
V
GS
= 3
V
2
T
C
= 125 °C
2
T
3
= – 55 °C
C
0
0
0.0
0.5
1.0
1.5
2.0
2.5
0
1
4
5
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
Output Characteristics
Transfer Characteristics
550
440
330
220
110
0
0.0
8
0
0.064
0.04
8
0.032
0.016
0.000
C
iss
V
= 4.5
V
GS
C
oss
V
GS
= 10
V
C
rss
0
6
12
1
8
24
30
0
6
12
1
8
24
30
I
– Drain C
u
rrent (A)
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
D
On-Resistance vs. Drain Current
Capacitance
1.7
1.5
1.3
1.1
0.9
0.7
10
8
I
= 5 A
I
= 5 A
D
D
V
GS
= 10
V
V
DS
= 10
V
V
GS
= 4.5
V
6
V
= 15
V
DS
4
V
DS
= 20
V
2
0
– 50
– 25
0
T
25
50
75
100 125 150
0.0
1.7
3.4
5.1
6.
8
8
.5
– J
u
nction
T
e
mperat
u
re (°C)
Q
g
–
T
o
tal Gate Charge (nC)
J
Gate Charge
On-Resistance vs. Junction Temperature
服务热线：400-655-8788
3
PHN210T
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.15
0.12
0.09
0.06
0.03
0.00
I
= 5 A
D
10
T
J
= 150 °C
1
T
J
= 25 °C
0.1
0.01
T
J
= 125 °C
T
J
= 25 °C
0.001
0.0
0.2
0.4
0.6
0.
8
1.0
1.2
0
1
2
3
4
5
6
7
8
9
10
V
SD
– So
u
rce-to-Drain
V
oltage (
V
)
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
0.2
50
40
30
20
10
0
– 0.1
– 0.4
– 0.7
– 1.0
I
= 5 mA
D
I
= 250
µ
A
D
– 50
– 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
100
1000
Time (s)
T
J
–
T
e
mperat
u
re (°C)
Single Pulse Power
Threshold Voltage
100
Limited
b
y R
*
DS(on)
10
1 ms
1
10 ms
100 ms
1 s
0.1
10 s
DC
T
A
= 25 °C
Single P
u
lse
B
V
DSS Limited
0.01
0.1
1
10
100
V
– Drain-to-So
u
rce
V
oltage (
V
)
DS
*
V
> minim
u
m
V
at
w
hich R
is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
服务热线：400-655-8788
4
PHN210T
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
7.5
6.0
4.5
3.0
1.5
0.0
0
25
50
75
100
125
150
T
C
– Case
T
e
mperat
u
re (°C)
Current Derating*
3.5
2.
8
2.1
1.4
0.7
0.0
1.5
1.2
0.9
0.6
0.3
0.0
0
0
25
50
75
100
125
150
25
50
T –
Am
b
ient
T
e
mperat
u
re (°C)
A
75
100
125
150
T
C
– Case
T
e
mperat
u
re (°C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dis-
sipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
服务热线：400-655-8788
5
PHN210T
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
N
otes:
P
DM
0.05
t
1
t
2
t
t
1
2
1. D
u
ty Cycle, D =
0.02
2. Per Unit Base = R
= 110 °C/
W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
4. S
u
rface Mo
u
nted
Single P
u
lse
0.01
-4
-3
-2
-1
10
10
10
10
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P
u
lse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
服务热线：400-655-8788
6
PHN210T
S
OIC (NARROW): 8-LEAD
JEDEC P
a
rt N
u
m
b
er: M
S
-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (G
a
ge Pl
a
ne)
A
All Le
a
d
s
0.101 mm
0.004″
q
e
B
A
1
L
MILLIMETERS
Max
INCHES
DIM
Min
Min
Max
A
A
1
B
C
D
E
e
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
服务热线：400-655-8788
7
PHN210T
RECOMMENDED MINIMUM
P
A
DS FOR SO-8
0.172
(4.369)
0.028
(0.711)
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
服务热线：400-655-8788
8
PHN210T
Disclaimer
All products due to improve reliability, function or design or for other reasons, product specifications and
data are subject to change without notice.
Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their
representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
product.(www.VBsemi.com)
Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of
any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
T
aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
including a particular purpose, non-infringement and merchantability guarantee.
Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
T
aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
Unless expressly stated in writing,
T
aiwan VBsemi products are not intended for use in medical, life saving,
or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal
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T
aiwan VBsemi such applications using client did not express their
own risk. Contact your authorized
T
aiwan VBsemi people who are related to product design applications and
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The information provided in this document and the company’s products without a license, express or implied,
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Material Category Policy
Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be
RoHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) – modification, unless otherwise specified as inconsistent.(www.VBsemi.com)
Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
2011/65 /.
Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as
halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products
conform to confirm compliance with IEC 61249-2-21 standard level JS709A.
