VBsemi-Elec-PSMN5R6-100BS-VB
| Part # | VBsemi-Elec-PSMN5R6-100BS-VB |
Download  | VBsemi-Elec-PSMN5R6-100BS-VB |
PSMN5R6-100BS
N-Channel 100 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
TrenchFET
®
Power MOSFET
V
DS
(V)
R
DS(on)
(
Ω
)
I
D
(A)
New Package with Low Thermal Resistance
100 % R
g
Tested
1
40
a
100
0.00
4
at V
GS
= 10 V
D
D
2
PAK (TO-263)
G
D
G
S
S
N
-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
C
Parameter
Symbol
Limit
100
Unit
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
V
GS
± 20
1
4
0
a
87
a
T
C
= 25 °C
Continuous Drain Current (T
J
= 175 °C)
I
D
T
C
= 125 °C
A
Pulsed Drain Current
Avalanche Current
I
DM
I
AR
440
75
Repetitive Avalanche Energy
b
L = 0.1 mH
T
C
= 25 °C
E
AR
280
375
c
mJ
W
Maximum Power Dissipation
b
P
D
T
A
= 25 °C
3.75
Operating Junction and Storage
T
e
mperature Range
T
J
, T
stg
– 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
R
thJA
Limit
40
Unit
PCB Mount (TO-263)
d
Junction-to-Ambient
°C/W
Junction-to-Case (Drain)
Notes:
R
thJC
0.4
a. Package limited.
b. Duty cycle
≤
1 %.
c. See SOA curve for voltage derating.
d. When mounted on 1″ square PCB (FR-4 material).
服务热线：400-655-8788
1
PSMN5R6-100BS
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V
DS
V
GS(th)
I
GSS
V
DS
= 0
V
,
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
100
2
V
4
± 100
1
V
DS
= 0
V
,
V
GS
= ± 20 V
nA
V
DS
= 100
V
,
V
GS
= 0 V
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
I
D(on)
R
DS(on)
g
fs
V
DS
= 100
V
,
V
GS
= 0
V
,
T
J
= 125 °C
V
DS
= 100
V
,
V
GS
= 0
V
,
T
J
= 175 °C
V
DS
≥
5
V
,
V
GS
= 10 V
50
µA
A
250
120
25
V
GS
= 10
V
,
I
D
= 30 A
0.00
4
0.017
0.025
Drain-Source On-State Resistance
a
V
GS
= 10
V
,
I
D
= 30 A, T
J
= 125 °C
V
GS
= 10
V
,
I
D
= 30 A, T
J
= 175 °C
V
DS
= 15
V
,
I
D
= 30 A
Ω
S
Forward
T
r
ansconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
T
o
tal Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
T
u
rn-On Delay Time
c
Rise Time
c
T
u
rn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
55
00
750
280
110
24
V
GS
= 0
V
,
V
DS
= 25
V
, f = 1
M
Hz
V
DS
= 50
V
,
V
GS
= 10
V
,
I
D
= 85 A
pF
160
Q
gs
Q
gd
R
g
nC
24
1.0
6.2
30
Ω
t
d(on)
t
r
t
d(off)
t
f
20
125
55
200
85
V
DD
= 50
V
,
R
L
= 0.6
Ω
ns
I
D
≅
85 A, V
GEN
= 10
V
,
R
g
= 2.5
Ω
130
195
Source-Drain Diode Ratin
g
s and Characteristics
T
C
= 25 °C
b
Continuous Current
I
S
I
SM
1
4
0
240
1.5
A
Pulsed Current
Forward Voltage
a
V
SD
t
rr
I
F
= 85 A, V
GS
= 0 V
1.0
70
V
ns
A
Reverse Recovery Time
Peak Reverse Recovery Charge
Reverse Recovery Charge
140
10
I
RM(REC)
Q
rr
I
F
= 50 A, dI/dt = 100 A/µs
5.5
0.19
0.35
µC
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
PSMN5R6-100BS
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
250
200
150
100
50
250
6
V
V
GS
= 10
V
thr
u
7
V
200
150
100
50
T
= 125 °C
C
5
V
– 55 °C
25 °C
4
V
0
0
0
0
1
2
3
4
5
6
7
2
4
6
8
10
V
– Gate-to-So
u
rce
V
oltage (
V
)
V
DS
– Drain-to-So
u
rce
V
oltage
GS
Transfer Characteristics
Output Characteristics
0.015
0.012
0.009
0.006
0.003
0.000
250
200
150
100
50
T
= – 55 °C
25 °C
C
V
GS
= 10
V
125 °C
0
0
20
40
I
60
8
0
100
120
0
20
40
60
8
0
100
120
– Drain C
u
rrent (A)
I
D
– Drain C
u
rrent (A)
D
On-Resistance vs. Drain Current
Transconductance
20
16
12
8
10 000
8
000
6000
4000
2000
0
V
= 50
V
=
8
5 A
DS
I
D
C
iss
4
C
oss
C
rss
0
0
50
100
150
200
0
25
50
75
100
Q
–
T
o
tal Gate Charge (nC)
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
g
Gate Char
g
e
Capacitance
服务热线：400-655-8788
3
PSMN5R6-100BS
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
3.0
100
V
= 10
V
= 30 A
GS
I
D
2.5
2.0
1.5
1.0
0.5
0.0
T =
150 °C
J
T =
25 °C
J
10
1
– 50
– 25
0
25
50
75 100 125 150 175
0
0.3
0.6
0.9
1.2
T
– J
u
nction Temperat
u
re (°C)
J
V
SD
– S
o
u
rce-to-Drain
V
oltage (
V
)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Volta
g
e
1000
100
125
120
115
110
105
100
95
I
= 10 mA
D
I
A
V
(A) at T
= 25 °C
A
10
1
I
A
V
(A) at T
= 150 °C
A
0.1
90
– 50
– 25
0
25
50
75 100 125 150 175
0.00001
0.0001
0.001
t
0.01
0.1
1
(s)
in
T
– J
u
nction Temperat
u
re (°C)
J
Avalanche Current vs. Time
Drain Source Breakdown
vs. Junction Temperature
服务热线：400-655-8788
4
PSMN5R6-100BS
THERMAL RATINGS
120
1000
100
10
100
8
0
60
40
20
0
10
µ
s
100
µ
s
Limited
b
y R
*
DS(on)
1 ms
10 ms
100 ms, DC
1
T
= 25 °C
C
Single P
u
lse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
1000
V
– Drain-to-So
u
rce
V
oltage (
V
)
DS
T
– Am
b
ient
T
e
mperat
u
re (°C)
C
*
V
GS
minim
u
m
V
at
w
hich R
is specified
DS(on)
GS
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operatin
g
Area
2
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P
u
lse
0.01
-4
-3
-2
-1
10
10
10
S
qu
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
10
服务热线：400-655-8788
5
PSMN5R6-100BS
TO-263AB (HIGH VOLTAGE)
A
B
(Datum A)
3
4
A
A
E
c2
H
L1
4
Gauge
plane
4
0° to 8°
B
5
Detail A
Seating plane
D
H
L
C
C
A1
L3
L4
Detail “A”
1
2
3
L2
Rotated 90° CW
B
B
scale 8:1
A
2 x b2
2 x b
c
E
M
M
B
0.010
A
M
± 0.004
B
2 x e
Base
metal
5
D1
4
Plating
(c)
b1, b3
5
c1
(b, b2)
Lead tip
4
E1
Section B – B and C – C
Scale: none
View A – A
MILLIMETERS
INCHES
MILLIMETERS
INCHES
DIM.
A
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.38
MAX.
4.83
0.25
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
MIN.
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.330
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
DIM.
D1
E
MIN.
6.86
MAX.
MIN.
MAX.
–
10.67
–
0.270
0.380
0.245
–
0.420
–
A1
b
9.65
6.22
E1
e
b1
b2
b3
c
2.54 BSC
0.100 BSC
H
14.61
15.88
2.79
1.65
1.78
0.575
0.625
0.110
0.066
0.070
L
1.78
0.070
L1
L2
L3
L4
–
–
–
–
c1
c2
D
0.25 BSC
0.010 BSC
4.78
5.28
0.188
0.208
ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970
Notes
1.
Dimensioning and tolerancing per ASME Y14.5M-
2018
.
2.
Dimensions are shown in millimeters (inches).
3.
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.
4.
Thermal PAD contour optional within dimension E, L1, D1 and E1.
5.
Dimension b1 and c1 apply to base metal only.
6.
Datum A and B to be determined at datum plane H.
7.
Outline conforms to JEDEC outline to TO-263AB.
服务热线：400-655-8788
6
PSMN5R6-100BS
2
RECOMMENDED MINIMUM PADS FOR D PAK:
3-Lead
0.420
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
服务热线：400-655-8788
7
PSMN5R6-100BS
Disclaimer
All products due to improve reliability, function or design or for other reasons, product specifications and
data are subject to change without notice.
Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their
representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
product.(www.VBsemi.com)
Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of
any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
T
aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
including a particular purpose, non-infringement and merchantability guarantee.
Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
T
aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
Unless expressly stated in writing,
T
aiwan VBsemi products are not intended for use in medical, life saving,
or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal
injury or death, use or sale of products used in
T
aiwan VBsemi such applications using client did not express their
own risk. Contact your authorized
T
aiwan VBsemi people who are related to product design applications and
other terms and conditions in writing.
The information provided in this document and the company’s products without a license, express or implied,
by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product
names and trademarks referred to herein are trademarks of their respective representatives will be all.
Material Category Policy
Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be
oHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) – modification, unless otherwise specified as inconsistent.(www.VBsemi.com)
Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
2011/65 /.
Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as
halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products
conform to confirm compliance with IEC 61249-2-21 standard level JS709A.
