VBsemi-Elec-RJK0632JPD-VB
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RJK0632JPD
N-Channel 6
0-V (D-S) MOSFET
FEATURES
•
PRODUCT SUMMARY
TrenchFET
®
Power MOSFET
175 °C Junction Temperature
I
D
(A)
a
V
DS
(V)
r
DS(on)
(
Ω
)
Available
•
0.025 at V
GS
= 10 V
0.030 at V
GS
= 4.5 V
4
5
4
0
RoHS*
60
COMPLIANT
D
TO-252
G
Drain Connected to Tab
G
D
S
S
Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
C
Parameter
Symbol
Limit
Unit
V
GS
Gate-Source Voltage
20
V
T
C
= 25 °C
4
5
35
Continuous Drain Current (T
J
= 175 °C)
b
I
D
T
C
= 100 °C
I
DM
I
S
Pulsed Drain Current
100
23
A
Continuous Source Current (Diode Conduction)
Avalanche Current
I
AS
E
AS
20
Single Avalanche Energy (Duty Cycle
≤
1 %)
L = 0.1 mH
T
C
= 25 °C
20
mJ
W
100
P
D
Maximum Power Dissipation
3
a
T
A
= 25 °C
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
≤
10 sec
18
40
22
50
4
Maximum Junction-to-Ambient
a
R
thJA
Steady State
°C/W
R
thJC
Maximum Junction-to-Case
3.2
Notes:
a. Surface Mounted on 1″ x 1″ FR4 board, t
≤
10 sec.
服务热线:400-655-8788
1
RJK0632JPD
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Typ
a
Parameter
Symbol
Test Conditions
Min
Max
Unit
Static
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0
V
,
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
60
V
1.0
2.0
3.0
100
1
V
DS
= 0
V
,
V
GS
=
20 V
nA
V
DS
= 60
V
,
V
GS
= 0 V
I
DSS
V
DS
= 60
V
,
V
GS
= 0
V
,
T
J
= 125 °C
Zero Gate Voltage Drain Current
On-State Drain Current
b
50
µA
A
V
DS
= 60
V
,
V
GS
= 0
V
,
T
J
= 175 °C
V
DS
= 5
V
,
V
GS
= 10 V
250
I
D(on)
50
V
GS
= 10
V
,
I
D
= 15 A
0.025
0.055
0.069
0.030
20
V
V
GS
= 10
V
,
I
D
= 15 A, T
J
= 125 °C
GS
= 10
V
,
I
D
= 15 A, T
J
= 175 °C
Drain-Source On-State Resistance
b
r
DS(on)
Ω
V
GS
= 4.5
V
,
I
D
= 10 A
Forward
T
r
ansconductance
b
Dynamic
a
g
fs
V
DS
= 15
V
,
I
D
= 15 A
S
C
iss
C
oss
C
rss
Q
g
Input Capacitance
1
50
0
140
60
11
3
V
GS
= 0
V
,
V
DS
= 25
V
, f = 1
M
Hz
V
DS
= 30
V
,
V
GS
= 10
V
,
I
D
= 23 A
Output Capacitance
Reverse
T
r
ansfer Capacitance
pF
nC
T
o
tal Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
T
u
rn-On Delay Time
c
Rise Time
c
17
Q
gs
Q
gd
t
d(on)
t
r
3
8
15
25
45
40
15
30
25
V
DD
= 30
V
,
R
L
= 1.3
Ω
ns
T
u
rn-Off Delay Time
c
Fall Time
c
I
D
≅
23 A, V
GEN
= 10
V
,
R
g
= 2.5
Ω
t
d(off)
t
f
Source-Drain Diode Ratings and Characteristics
(T
C
= 25 °C)
I
SM
V
SD
t
rr
A
V
Pulsed Current
50
1.5
60
I
F
= 15 A, V
GS
= 0 V
Diode Forward Voltage
Reverse Recovery Time
1.0
30
I
F
= 15 A, di/dt = 100 A/µs
ns
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线:400-655-8788
2
RJK0632JPD
TYPICAL CHARACTERISTICS
25 °C unless noted
50
40
30
20
10
0
100
V
GS
= 10 thru 6 V
5 V
80
60
40
20
0
4 V
T
= 125 °C
C
25 °C
3 V
8
– 55 °C
0
1
2
3
4
5
6
0
2
4
6
10
V
GS
–
Gate-to-Source Voltage (V)
V
DS
–
Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
32
24
16
8
0.10
0.08
0.06
0.04
0.02
0.00
T
= – 55 °C
C
25 °C
125 °C
V
GS
= 4.5 V
V
GS
= 10 V
0
0
5
10
15
20
25
0
10
20
30
40
50
I
D
–
Drain Current (A)
I
D
– Drain
Current (A)
Transconductance
On-Resistance vs. Drain Current
10
8
1000
800
600
400
200
0
V
D
= 30
V
DS
= 23 A
I
C
iss
6
4
2
C
oss
C
rss
0
0
2
4
6
8
10
12
0
10
20
30
40
50
60
Q
–
T
o
tal Gate Charge (nC)
V
DS
–
Drain-to-Source Voltage (V)
g
Capacitance
Gate Charge
服务热线:400-655-8788
3
RJK0632JPD
TYPICAL CHARACTERISTICS
25 °C unless noted
100
2.5
V
D
= 10 V
GS
= 15 A
I
2.0
1.5
1.0
0.5
0.0
T =
150 °C
J
T =
25 °C
J
10
1
0
0.3
0.6
0.9
1.2
1.5
– 50
– 25
0
25
Junction Temperature
(
°
C)
On-Resistance vs. Junction Temperature
50
75 100
125 150 175
V –
Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
T
–
SD
J
服务热线:400-655-8788
4
RJK0632JPD
THERMAL RATINGS
100
10
25
*r
DS(on)
Limited
10 µs
20
15
10
5
100 µs
1 ms
10 ms
1
100 ms
dc
T
C
= 25 °C
Single Pulse
0
0.1
0.1
1
10
100
0
25
50
75
100
125
150
175
V
–
Drain-to-Source Voltage (V)
DS
T
A
– Ambient
Temperature (°C)
*V
GS
> minimum V
at which r
is specified
GS
DS(on)
Maximum Drain Current
vs. Ambient Temperature
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–
4
10
–
3
10
–
2
10
–
1
10
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
服务热线:400-655-8788
5
RJK0632JPD
TO-252AA CASE OUTLINE
E
A
MILLIMETERS
INCHES
C2
b3
DIM.
A
MIN.
MAX.
2.38
0.127
0.88
1.14
5.46
0.61
0.89
6.22
–
MIN.
MAX.
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
–
2.18
–
0.086
–
A1
b
0.64
0.76
4.95
0.46
0.46
5.97
5.21
6.35
4.32
9.40
0.025
0.030
0.195
0.018
0.018
0.235
0.205
0.250
0.170
0.370
b2
b3
C
C2
D
D1
E
6.73
–
0.265
–
E1
H
b
C
b2
e
10.41
0.410
A1
e1
e
2.28 BSC
4.56 BSC
1.40
0.090 BSC
0.180 BSC
e1
L
1.78
1.27
1.02
1.52
0.055
0.070
0.050
0.040
0.060
L3
L4
L5
0.89
–
0.035
–
1.14
0.045
ECN:
X12-0247
-Rev. M, 24-Dec-12
DWG: 5347
E1
Note
Dimension L3 is for reference only.
•
服务热线:400-655-8788
6
RJK0632JPD
RECOMMENDED MINIMUM
P
A
DS FOR D
P
A
K (TO-252)
0.224
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
服务热线:400-655-8788
7
RJK0632JPD
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representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
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any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
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aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
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Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
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aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
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oHS compliant and meets the definition of restrictions under Directive of the European Parliament
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