VBsemi-Elec-SFT1443-VB
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SFT1443
N-Channel 100 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
•
•
TrenchFET
®
Power MOSFET
175 °C Junction Temperature
PWM Optimized
V
DS
(V)
R
DS(on)
(
)
I
D
(A)
100
0.
1
14
at
V
GS
= 10 V
1
5
100 % R
g
Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Primary Side Switch
•
D
TO-252
G
S
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
100
± 20
1
5
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
T
C
= 25 °C
Continuous Drain Current (T
J
= 175 °C)
b
I
D
T
C
= 125 °C
13
I
DM
I
S
Pulsed Drain Current
4
0
A
Continuous Source Current (Diode Conduction)
Avalanche Current
3
I
AS
E
AS
3
Single Pulse Avalanche Energy
L = 0.1 mH
T
C
= 25 °C
18
mJ
W
9
6
b
3
a
P
D
Maximum Power Dissipation
T
A
= 25 °C
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
R
thJA
Typical
Maximum
Unit
t
10 s
15
40
18
50
Junction-to-Ambient
a
Steady State
°C/W
R
thJC
Junction-to-Case (Drain)
0.85
1.1
Notes:
a. Surface mounted on 1″ x 1″ FR4 board.
b. See SOA curve for voltage derating.
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1
SFT1443
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Typ.
a
Parameter
Symbol
Test Conditions
Min.
Max.
Unit
Static
V
DS
V
GS(th)
I
GSS
V
GS
= 0
V
,
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
100
1.0
V
2.5
± 100
1
V
DS
= 0
V
,
V
GS
= ± 20 V
nA
V
DS
= 100
V
,
V
GS
= 0 V
I
DSS
V
DS
= 100
V
,
V
GS
= 0
V
,
T
J
= 125 °C
Zero Gate Voltage Drain Current
On-State Drain Current
b
50
µA
A
V
DS
= 100
V
,
V
GS
= 0
V
,
T
J
= 175 °C
V
DS
=
5
V
,
V
GS
= 10 V
250
I
D(on)
40
V
GS
= 10 V, I
D
=
3
A
0.
114
0.
1
20
0.
140
0.
1
20
35
V
GS
= 10 V, I
D
=
3
A, T
J
= 125 °C
V
GS
= 10 V, I
D
=
3
A, T
J
= 175 °C
V
GS
= 4.5 V I
D
=
3
A
Drain-Source On-State Resistance
b
R
DS(on)
Forward
T
r
ansconductance
b
Dynamic
a
g
fs
V
DS
= 15 V, I
D
=
3
A
S
C
iss
C
oss
C
rss
Q
g
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
T
o
tal Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
950
120
60
24
8
V
GS
= 0
V
,
V
DS
= 25
V
, F = 1
M
Hz
pF
41
Q
gs
Q
gd
R
g
V
DS
= 50 V,
V
GS
= 10 V, I
D
=
3
A
nC
12
0.5
2.9
25
75
45
90
T
u
rn-On Delay Time
c
Rise Time
c
T
u
rn-Off Delay Time
c
Fall Time
c
t
d(on)
t
r
t
d(off)
t
f
15
50
30
60
V
DD
= 50 V,
R
L
= 5.2
Ω
I
D
≅
3
A, V
GEN
= 10 V, R
g
= 2.5
Ω
ns
Source-Drain Diode Ratings and Characteristics
(T
C
= 25 °C)
I
SM
V
SD
t
rr
Pulsed Current
5
A
V
Diode Forward Voltage
b
I
F
=
3
A, V
GS
= 0 V
0.9
1.5
250
I
F
=
3
A, dI/dt = 100 A/µs
Source-Drain Reverse Recovery Time
180
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
300 µs, duty cycle
2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
SFT1443
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
8
6
4
2
40
30
20
10
0
V
GS
= 10 V thru 5 V
4 V
T
= 125 °C
25 °C
C
3 V
2 V
– 55 °C
0
0
1
2
3
4
5
6
0
2
4
6
8
10
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
V
DS
– Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
70
60
50
40
30
20
10
0
0.
4
0.
3
0.
2
0.
1
0.0
T
= – 55 °C
C
25 °C
125 °C
V
GS
= 5 V
V
GS
= 10 V
0
10
20
– Drain C
u
rrent (A)
30
40
0
10
20
30
40
I
D
I
D
– Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
1500
1200
900
600
300
0
20
16
12
8
V
= 100 V
= 19 A
DS
I
D
C
iss
4
C
rss
C
oss
0
0
20
40
60
80
100
0
10
20
30
40
50
60
V
DS
– Drain-to-Source Voltage (V)
Q
–
T
o
tal Gate Charge (nC)
g
Capacitance
Gate Charge
服务热线：400-655-8788
3
SFT1443
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.3
0.25
0
.
2
100
V
= 10
V
= 5 A
GS
I
D
T =
150 °C
J
0.15
0.1
10
T =
25 °C
J
0.
0
5
0.0
1
– 50
– 25
0
25
50
75 100
125 150 175
0
0.3
0.6
0.9
1.2
V
SD
– So
u
rce-to-Drain
V
oltage (
V
)
T –
J
u
nction
T
e
mperat
u
re (°C)
J
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
THERMAL RATINGS
10
7
6
5
4
3
10
µ
s
Limited
b
y R
*
DS(on)
100
µ
s
5
1 ms
10 ms
1
100 ms
1 s, DC
T
= 25 °C
C
Single P
u
lse
0
0.1
0.1
0
25
50
75
100
125
150
175
1
10
100
1000
T
– Case
T
e
mperat
u
re (°C)
C
V
DS
– Drain-to-Source Voltage (V)
Maximum Avalanche Drain Current
vs. Case Temperature
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–
2
10
–
1
10
–
4
–
3
10
1
10
30
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
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4
SFT1443
TO-252AA CASE OUTLINE
E
A
MILLIMETERS
INCHES
C2
b3
DIM.
A
MIN.
MAX.
2.38
0.127
0.88
1.14
5.46
0.61
0.89
6.22
–
MIN.
MAX.
2.18
–
0.086
–
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
–
A1
b
0.64
0.76
4.95
0.46
0.46
5.97
5.21
6.35
4.32
9.40
0.025
0.030
0.195
0.018
0.018
0.235
0.205
0.250
0.170
0.370
b2
b3
C
C2
D
D1
E
6.73
–
0.265
–
E1
H
b
C
b2
e
10.41
0.410
A1
e1
e
2.28 BSC
4.56 BSC
1.40
0.090 BSC
0.180 BSC
e1
L
1.78
1.27
1.02
1.52
0.055
0.070
0.050
0.040
0.060
L3
L4
L5
0.89
–
0.035
–
1.14
0.045
ECN:
X12-0247
-Rev. M, 24-Dec-12
DWG: 5347
E1
Note
Dimension L3 is for reference only.
•
服务热线：400-655-8788
5
SFT1443
RECOMMENDED MINIMUM
P
A
DS FOR D
P
A
K (TO-252)
0.224
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
服务热线：400-655-8788
6
SFT1443
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aiwan
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