VBsemi-Elec-SI1304BDL-VB
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SI1304BDL
N-Channel
2
0 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
V
DS
(V)
R
DS(on)
(
)
I
D
(A)
a
4
Q
g
(Typ.)
Definition
0.036 at V
GS
= 10 V
0.040 at V
GS
= 4.5 V
0.048 at V
GS
= 2.5 V
•
•
•
•
TrenchFET
®
Power MOSFET
Typical ESD Protection 2000 V HBM
100 % R
g
Tested
2
0
3.8
4 nC
3.6
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
SOT-323
•
Portable Devices
SC-70 (3-LEADS)
D
– Load Switch
– Battery Switch
Load Switch for Motors, Relays and Solenoids
G
S
1
•
G
3
D
2
Top
V
ie
w
S
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
2
0
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
± 12
4
a
3.6
a
T
C
= 25 °C
C
= 70 °C
T
Continuous Drain Current (T
J
= 150 °C)
I
D
4
a, b, c
3.7
b, c
20
T
A
= 25 °C
T
A
= 70 °C
A
I
DM
I
S
Pulsed Drain Current (t = 300 µs)
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
2.3
a
Continuous Source-Drain Diode Current
1.3
b, c
2.8
T
C
= 70 °C
1.8
Maximum Power Dissipation
P
D
W
1.56
b, c
1.0
b, c
T
A
= 25 °C
T
A
= 70 °C
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
60
Maximum
Unit
Maximum Junction-to-Ambient
b, d
R
thJA
t
5 s
80
45
°C/W
R
thJF
Steady State
34
Maximum Junction-to-Foot (Drain)
Notes:
a. Package limited, T
C
= 25 °C.
b. Surface mounted on 1″ x 1″ FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
1
SI1304BDL
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
DS
T
e
mperature Coefficient
GS(th)
T
e
mperature Coefficient
V
DS
V
GS
= 0
V
,
I
D
= 250 µA
I
D
= 250 µA
2
0
V
mV/°C
V
V
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
23
V
– 3.2
Gate-Source Threshold Voltage
0.6
15
1.3
± 0.5
± 25
1
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0
V
,
V
GS
= ± 4.5 V
Gate-Source Leakage
I
GSS
V
DS
= 0
V
,
V
GS
= ± 12 V
µA
V
DS
=
2
0 V, V
GS
= 0 V
V
DS
=
2
0 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5
V
,
V
GS
= 4.5 V
V
GS
= 10
V
,
I
D
= 3.7 A
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
10
I
D(on)
A
S
0.036
0.040
0.048
17
0.045
0.049
0.060
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 4.5
V
,
I
D
= 3.6 A
V
GS
= 2.5
V
,
I
D
= 1.5 A
Forward
T
r
ansconductance
a
g
fs
V
DS
= 15
V
,
I
D
= 3.7 A
Dynamic
b
V
DS
= 15 V, V
GS
= 10 V, I
D
=
3
.7 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
=
3
.7 A
f = 1 MHz
8.8
4
13.5
6
T
o
tal Gate Charge
Q
g
nC
Gate-Source Charge
Q
gs
Q
gd
R
g
0.9
1.1
2
Gate-Drain Charge
Gate Resistance
0.4
4
0.58
0.8
3.8
1.5
0.2
0.3
6
k
T
u
rn-On Delay Time
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
0.29
0.4
1.9
0.75
0.1
0.15
3
Rise Time
V
DD
= 15
V
,
R
L
= 4.1
I
D
3.7 A, V
GEN
= 4.5
V
,
R
g
= 1
T
u
rn-Off DelayTime
Fall Time
µs
T
u
rn-On Delay Time
Rise Time
V
DD
= 15
V
,
R
L
= 4.1
I
D
3.7 A, V
GEN
= 10
V
,
R
g
= 1
T
u
rn-Off DelayTime
Fall Time
0.75
1.5
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
2.3
20
A
I
S
= 3.7 A, V
GS
= 0 V
0.85
12
1.2
25
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
5
10
I
F
= 3.7 A, dI/dt = 100 A/µs, T
J
= 25 °C
6.5
5.5
ns
t
b
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
SI1304BDL
TYPICAL CHARACTERISTICS
(T =
25 °C, unless otherwise noted)
A
40
30
20
10
0
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
1.E-07
1.E-08
1.E-09
1.E-10
T
J
= 150
°
C
T
J
= 25
°
C
T
J
= 25
°
C
0
3
6
9
12
15
18
2.5
10
0
3
6
9
12
15
18
V
GS
– Gate-to-Source Voltage (V)
V
GS
– Gate-Source Voltage (V)
Gate Current vs. Gate-to-Source Voltage
Gate Current vs. Gate-to-Source Voltage
20
16
12
8
10
8
V
GS
= 5 V thru 3 V
V
GS
= 2.5 V
6
T
C
= 25
°
C
V
GS
= 2 V
4
4
2
V
GS
= 1.5 V
0
0
0.0
0.5
1.0
1.5
2.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transfer Characteristics
Output Characteristics
0.16
0.12
0.08
0.04
0
10
8
I
D
=
3.
7 A
V
DS
= 15 V
V
DS
=
1
4 V
6
V
GS
= 2.5 V
V
DS
= 7.5 V
4
V
GS
= 4.5 V
2
V
GS
= 10 V
0
0
4
8
12
16
20
0
2
4
6
8
Q
g
– Total Gate Charge (nC)
I
D
– Drain Current (A)
Gate Charge
On-Resistance vs. Drain Current
3
SI1304BDL
TYPICAL CHARACTERISTICS
(T =
25 °C, unless otherwise noted)
A
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
100
10
1
V
GS
= 10 V; I
D
= 3.7 A
V
GS
= 4.5 V; I
D
= 3.7 A
V
GS
= 2.5 V; I
D
= 1.5 A
T
J
= 150
°
C
T
J
= 25
°
C
0.1
– 50
– 25
0
25
50
75
100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
– Junction Temperature (
°
C)
V
SD
– Source-to-Drain Voltage (V)
Normalized On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
0.10
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
I
D
= 3.7 A
0.08
0.06
0.04
0.02
0
T
J
= 125
°
C
I
D
= 250 μA
T
J
= 25
°
C
– 50
– 25
0
25
50
75
100 125 150
0.0
2.0
4.0
6.0
8.0
10.0
T
J
– Temperature (
°
C)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
100
10
30
25
20
15
10
5
Limited by R
DS(on)
*
100 μs
1
1 ms
10 ms
100 ms
0.1
0.01
T
A
= 25
°
C
Single Pulse
1 s
10 s
DC
BVDSS Limited
0
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
V
DS
– Drain-to-Source Voltage (V)
Time (s)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
4
SI1304BDL
TYPICAL CHARACTERISTICS
(T =
25 °C, unless otherwise noted)
A
8
6
4
2
0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Package Limited
0
25
50
75
100
125
150
25
50
75
100
125
150
T
C
– Case Temperature (
°
C)
T
– Foot
T
e
mperature (°C)
F
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
5
SI1304BDL
TYPICAL CHARACTERISTICS
(T =
25 °C, unless otherwise noted)
A
1
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
P
DM
0.05
t
1
0.02
t
2
t
1
1. Duty Cycle, D =
t
2
2. Per Unit Base = R
= 125 °C/W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
Single Pulse
0.01
4. Surface Mounted
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
6
SI1304BDL
SCĆ70: 3ĆLEADS
MILLIMETERS
INCHES
Dim Min
Nom Max Min Nom
Max
3
0.90
–
–
1.10
0.10
1.00
0.40
0.25
2.20
2.40
1.35
0.035
–
–
–
0.043
0.004
0.039
0.016
0.010
0.087
0.094
0.053
A
A
1
A
2
b
c
D
E
E
1
E
E
1
–
0.80
–
0.031
0.010
0.004
0.071
0.071
0.045
–
1
2
0.25
–
–
0.10
–
–
e
b
1.80
2.00
2.10
1.25
0.65BSC
1.30
0.20
7
_
Nom
0.079
0.083
0.049
0.026BSC
0.051
0.008
7
_
Nom
e
1
D
1.80
c
1.15
e
e
1
L
A
2
A
1.20
1.40
0.30
0.047
0.004
0.055
0.012
L
0.10
0.08
c
A
1
ECN: S-03946—Rev. C, 09-Jul-01
DWG: 5549
7
SI1304BDL
RECOMMENDED MINIMUM
P
A
DS FOR SC-70: 3-Lead
0.025
0.022
(0.622)
(0.559)
0.027
(0.686)
0.071
(1.803)
Recommended Minimum Pads
Dimensions in Inches/(mm)
8
SI1304BDL
Disclaimer
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data are subject to change
without notice.
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a
iwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their
representatives (collectively, the “
T
a
iwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to
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a
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T
o
t
he maximum extent permitted by applicable law on
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a
iwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
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Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
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a
iwan demand that the
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a
iwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
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iwan
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2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) – modification, unless otherwise specified as inconsistent.(www.VBsemi.
tw
)
Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
2011/65 /.
Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as
halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products
conform to confirm compliance with IEC 61249-2-21 standard level JS709A.
9
