VBsemi-Elec-SI1563EDH-VB
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SI1563EDH
N- and P- Channel 20 V (D-S)
MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
V
DS
(V)
R
DS(on)
(
Ω
)
I
D
(A)
3.28
Definition
0.090 at V
GS
= 4.5 V
0.110 at V
GS
= 2.5 V
0.130 at V
GS
= 1.8 V
0.155 at V
GS
= – 4.5 V
0.190 at V
GS
= – 2.5 V
0.220 at V
GS
= – 1.8 V
•
•
•
•
TrenchFET
®
Power MOSFETs: 1.8 V Rated
Thermally Enhanced SC-70 Package
Fast Switching
N-Channel
P-Channel
20
2.13
1.50
– 2.80
– 1.81
– 1.15
Compliant to RoHS Directive 2002/95/EC
– 20
APPLICATIONS
•
Load Switch for Portable Devices
D
1
S
2
SOT-363
SC-70 (6-LEADS)
S
1
G
1
D
2
1
2
3
6
D
1
G
2
G
1
5
4
G
2
S
2
S
1
D
2
Top
V
ie
w
N-Channel
P-Channel
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
A
N-Channel
P-Channel
5 s
Steady State
5 s
Steady State
– 20
Parameter
Symbol
V
DS
Unit
Drain-Source Voltage
Gate-Source Voltage
20
V
V
GS
20
20
T
A
= 25 °C
A
= 85 °C
3.28
2.12
3.03
1.81
9.5
– 2.80
– 1.72
– 2.58
Continuous Drain Current (T
J
= 150 °C)
a
I
D
T
– 1.53
A
Pulsed Drain Current
I
DM
I
S
– 8.5
Continuous Source Current (Diode Conduction)
a
T
A
= 25 °C
= 85 °C
2.61
1.24
0.88
2.48
1.17
0.75
– 1.61
1.10
-1.48
0.97
0.5
Maximum Power Dissipation
a
P
D
W
0.66
T
A
Operating Junction and Storage
T
e
mperature Range
T
J
, T
stg
– 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
R
thJA
Typical
Maximum
Unit
t
≤
5 s
130
170
80
170
220
100
Maximum Junction-to-Ambient
a
Steady State
Steady State
°C/W
Maximum Junction-to-Foot (Drain)
R
thJF
Notes:
a. Surface mounted on 1″ x 1″ FR4 board.
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SI1563EDH
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
= V
GS
, I
D
= 100 µA
V
DS
= V
GS
, I
D
= – 100 µA
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.45
1
Gate Threshold Voltage
Gate-Body Leakage
V
GS(th)
V
– 0.45
1
100
100
1
I
GSS
V
DS
= 0
V
,
V
GS
=
8 V
nA
V
DS
= 16
V
,
V
GS
= 0 V
V
DS
= – 16
V
,
V
GS
= 0 V
– 1
5
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
µA
A
V
DS
= 16
V
,
V
GS
= 0
V
,
T
J
= 85 °C
V
DS
= – 16
V
,
V
GS
= 0
V
,
T
J
= 85 °C
V
DS
≥
5
V
,
V
GS
= 4.5 V
– 5
2
I
D(on)
V
DS
≤
– 5
V
,
V
GS
= – 4.5 V
V
GS
= 4.5
V
,
I
D
= 2.55 A
– 2
0.090
0.155
0.110
0.19
+
0
0.130
0.220
2.6
V
GS
= – 4.5
V
,
I
D
= – 1.85 A
V
GS
= 2.5
V
,
I
D
= 1.55 A
Drain-Source On-State Resistance
a
Forward
T
r
ansconductance
a
R
DS(on)
Ω
V
GS
= – 2.5
V
,
I
D
= – 1.35 A
V
GS
= 1.8
V
,
I
D
= 0.50 A
V
GS
= – 1.8
V
,
I
D
= – 0.50 A
V
DS
= 10
V
,
I
D
= 1.13 A
V
DS
= – 10
V
,
I
D
= – 0.88 A
I
S
= 0.48 A, V
GS
= 0 V
g
fs
S
V
1.5
0.8
1.2
Diode Forward Voltage
a
Dynamic
b
V
SD
I
S
= – 0.48 A, V
GS
= 0 V
– 0.8
– 1.2
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
1.25
1.2
0.21
0.3
0.3
0.21
15
2
T
o
tal Gate Charge
Q
g
Q
gs
Q
gd
t
d(on)
t
r
N-Channel
V
DS
= 10
V
,
V
GS
= 4.5
V
,
I
D
= 2.55 A
1.8
Gate-Source Charge
Gate-Drain Charge
T
u
rn-On Delay Time
Rise Time
nC
P-Channel
V
DS
= – 10
V
,
V
GS
= – 4.5
V
,
I
D
= – 0.88
A
25
30
35
40
40
25
20
20
60
60
18
N-Channel
V
DD
= 10
V
,
R
L
= 20
Ω
I
D
≅
0.5 A, V
GEN
= 4.5
V
,
R
g
= 6
Ω
22
25
25
P-Channel
DD
= – 10
V
,
R
L
= 20
Ω
I
D
≅
– 0.5 A, V
GEN
= – 4.5
V
,
R
g
= 6
Ω
T
u
rn-Off Delay Time
Fall Time
t
d(off)
ns
V
15
12
t
f
12
30
Reverse Recovery Time
t
rr
I
F
= 0.48 A, dI/dt = 100 A/µs
30
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
E-mail：China@VBsemi TEL:86-755-83251052
SI1563EDH
N-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
7.5
5.0
2.5
0.0
10
V
GS
= 5 V thru3 V
T
= – 55 °C
C
25 °C
7.5
5.0
2.5
0.0
1.5 V
125 °C
1 V
0
1
2
3
4
0.0
0.5
1.0
1.5
2.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.6
160
120
80
40
0
0.5
0.4
0.3
0.2
0.1
0.0
C
iss
V
GS
= 1.8 V
V
= 2.5 V
GS
C
oss
V
= 4.5 V
GS
C
rss
0.0
0.5
1.0
– Drain Current (A)
1.5
2.0
0
4
8
12
16
20
I
D
V
– Drain-to-Source Voltage (V)
DS
On-Resistance vs. Drain Current
Capacitance
5
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 10 V
V
D
= 4.5 V
DS
= 1.28 A
GS
I
I =
1.13 A
4
3
2
1
0
0.0
0.3
0.6
0.9
1.2
1.5
– 50
– 25
0
25
50
75
100 125 150
Q
– Total Gate Charge (nC)
T –
Junction Temperature (°C)
J
g
Gate Charge
On-Resistance vs. Junction Temperature
E-mail：China@VBsemi TEL:86-755-83251052
SI1563EDH
N-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.6
0.5
0.4
0.3
0.2
0.1
0.0
2
T
= 150 °C
J
1
I
D
= 1.13 A
T
= 25 °C
J
0.1
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
– Gate-to-Source Voltage (V)
V
SD
– Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.2
0.1
5
4
I
D
= 100
µ
A
0.0
3
2
1
– 0.1
– 0.2
– 0.3
– 0.4
0
– 50
– 25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
600
T
– Temperature (°C)
Time (s)
Single Pulse Power, Junction-to-Ambient
J
Threshold Voltage
10
I
Limited
DM
P(t) = 0.0001
Limited by R
*
DS(on)
1
P(t) = 0.001
P(t) = 0.01
I
D(on)
Limited
0.1
P(t) = 0.1
T
= 25 °C
A
Single Pulse
P(t) = 1
P(t) = 10, DC
BVDSS Limited
10
0.01
0.1
1
100
V
– Drain-to-Source Voltage (V)
DS
* V
> minimum V
at which R
is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
E-mail：China@VBsemi TEL:86-755-83251052
SI1563EDH
N-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 170 °C/W
thJA
(t)
3. T
– T
= P
Z
A DM
thJA
JM
Single Pulse
10
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
E-mail：China@VBsemi TEL:86-755-83251052
SI1563EDH
P-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3 V
2.5 V
2 V
= 5 V
V
GS
T
= – 55 °C
C
thru 3.5 V
25 °C
125 °C
1.5 V
1 V
0
1
2
3
4
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
160
120
80
40
0
0.64
0.48
V
= 1.8 V
GS
C
iss
V
= 2.5 V
GS
0.32
0.16
0.0
V
GS
= 4.5 V
C
oss
C
rss
0
2
4
6
8
10
12
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
– Drain-to-Source Voltage (V)
I
D
– Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
1.6
1.4
1.2
1.0
0.8
0.6
5
V
D
= 10 V
DS
= 0.9 A
V
D
= 4.5 V
GS
= 0.88 A
I
I
4
3
2
1
0
– 50
– 25
0
25
50
75
100 125 150
0.0
0.3
Q
0.6
0.9
1.2
1.5
– Total Gate Charge (nC)
T –
Junction Temperature (°C)
g
J
Gate Charge
On-Resistance vs. Junction Temperature
E-mail：China@VBsemi TEL:86-755-83251052
SI1563EDH
P-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1.6
1.2
0.8
0.4
0.0
2
T
= 150 °C
I
D
= 0.88 A
J
1
T
= 25 °C
J
0.1
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
– Gate-to-Source Voltage (V)
V
SD
– Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.30
0.25
5
4
I
D
= 100
µ
A
0.20
0.15
3
0.10
0.05
2
1
0.00
– 0.05
– 0.10
– 0.15
0
– 50
– 25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
600
T
– Temperature (°C)
Time (s)
Single Pulse Power, Junction-to-Ambient
J
Threshold Voltage
10
I
Limited
DM
P(t) = 0.0001
Limited by R
*
DS(on)
1
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
I
D(on)
Limited
0.1
T
A
= 25 °C
Single Pulse
P(t) = 1
P(t) = 10
DC
BVDSS Limited
10
0.01
0.1
1
100
V
DS
– Drain-to-Source Voltage (V)
* V
> minimum V
at which R
is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
E-mail：China@VBsemi TEL:86-755-83251052
SI1563EDH
P-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 170 °C/W
thJA
0.02
(t)
3. T
– T
= P
Z
A DM
thJA
JM
Single Pulse
0.01
4. Surface Mounted
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
E-mail：China@VBsemi TEL:86-755-83251052
SI1563EDH
Disclaimer
All products due to improve reliability, function or design or for other reasons, product specifications and
data are subject to change without notice.
T
a
iwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their
representatives (collectively, the “
T
a
iwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to
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any goods or continuous production.
T
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t
he maximum extent permitted by applicable law on
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a
iwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
including a particular purpose, non-infringement and merchantability guarantee.
Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
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a
iwan demand that the
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a
iwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
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iwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
Unless expressly stated in writing,
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Material Category Policy
Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be
RoHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) – modification, unless otherwise specified as inconsistent.(www.VBsemi.
tw
)
Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
2011/65 /.
Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as
halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products
conform to confirm compliance with IEC 61249-2-21 standard level JS709A.
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