VBsemi-Elec-SI4497DY-VB
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SI4497DY
P-Channel 30 V (D-S) MOSFET
FEATURES
• TrenchFET
®
Gen IV p-channel power MOSFET
PRODUCT SUMMARY
V
DS
(V)
-30
0.0050
0.0080
27
18
Single
R
R
DS(on)
max. (
) at V
GS
= 10 V
DS(on)
max. (
) at V
GS
= 4.5 V
• Enables higher power density
• 100 % R
g
and UIS tested
Q
g
typ. (nC)
D
(A)
Configuration
I
APPLICATIONS
S
O-8
S
ingle
D
5
S
• Battery management in mobile devices
• Adapter and charger switch
• Battery switch
D
6
D
7
D
8
G
• Load switch
D
P-Channel MOSFET
4
G
3
S
2
S
Top View
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
-30
±
20
-18
UNIT
Drain-source voltage
Gate-source voltage
V
DS
V
GS
V
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
-13
-11
-8
-145
-5
Continuous drain current (T
J
= 150 °C)
I
D
A
Pulsed drain current (t = 100 μs)
I
DM
I
S
T
C
= 25 °C
Continuous source-drain diode current
T
A
= 25 °C
-2.8
b, c
Single pulse avalanche current
Single pulse avalanche energy
I
AS
E
AS
-25
31.2
5.6
L = 0.1 mH
mJ
W
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
3.6
Maximum power dissipation
I
P
3.1
b, c
2
b, c
-55 to +150
260
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
c
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient
b
SYMBOL
R
thJA
R
thJF
TYPICAL
MAXIMUM
UNIT
t
10 s
Steady state
34
18
40
22
°C/W
Maximum junction-to-case (drain)
Notes
a. Package
limited
b. Surface
mounted on 1″ x 1″ FR4 board
c. t
= 10 s
d. The SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate b
o
t
tom side solder interconnection
e. Rework
conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum
under steady state conditions is 85 °C/W
g. T
C
= 25 °C
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1
SI4497DY
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0 V, I
D
= -250 μA
I
D
= -10 mA
-30
–
–
–
V
V
DS
temperature coefficient
–
–
-17
mV/°C
V
GS(th)
temperature coefficient
Gate-source threshold voltage
Gate-source leakage
I
D
= -250 μA
5.5
–
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= +16 / -20 V
V
DS
= -30 V, V
GS
= 0 V
V
DS
= -30 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
-10 V, V
GS
= -10 V
V
GS
= -10 V, I
D
= -15 A
V
GS
= -4.5 V, I
D
= -10 A
V
DS
= -15 V, I
D
= -15 A
-1
–
–
-2.2
100
-1
-15
–
V
I
GSS
–
nA
–
–
Zero gate voltage drain current
On-state drain current
a
I
DSS
I
D(on)
R
DS(on)
g
fs
μA
A
–
–
–
-40
–
0.0050
0.0080
81
–
Drain-source on-state resistance
a
S
–
–
Forward transconductance
a
Dynamic
b
–
–
Input capacitance
C
iss
C
oss
C
rss
–
–
3490
1420
70
–
–
Output capacitance
Reverse transfer capacitance
V
DS
= -15 V, V
GS
= 0 V, f = 1 MHz
V
DS
= -15 V, V
GS
= -10 V, I
D
= -10 A
pF
–
–
–
56
84
41
–
Total gate charge
Q
g
–
27
nC
Gate-source charge
Gate-drain charge
Q
gs
Q
gd
R
g
V
DS
= -15 V, V
GS
= -4.5 V, I
D
=-10 A
f = 1 MHz
–
9.4
8.2
3.5
15
–
–
Gate resistance
1.5
–
6
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
30
12
78
20
68
172
62
44
Rise time
–
6
V
DD
= -15 V, R
L
= 1.5
, I
D
-10 A,
V
GEN
= -10 V, R
g
= 1
Turn-off delay time
–
39
Fall time
–
10
ns
Turn-on delay time
–
34
Rise time
–
86
V
DD
= -15 V, R
L
= 1.5
, I
D
-10 A,
V
GEN
= -4.5 V, R
g
= 1
Turn-off delay time
–
31
Fall time
–
22
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
Body diode voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
–
–
–
–
–
–
–
–
–
-5
-150
-1.1
88
82
–
A
I
S
= -5 A, V
GS
= 0 V
-0.73
44
41
19
25
V
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
ns
nC
Q
rr
t
a
I
F
= -10 A, di/dt = 100 A/μs, T
J
= 25 °C
ns
t
b
–
Notes
a. Pulse
test; pulse width
300 μs, duty cycle
2 %
b. Guaranteed
by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
SI4497DY
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
Axis Title
150
120
90
60
30
0
10000
1000
100
150
120
90
60
30
0
10000
1000
100
V
GS
= 10 V thru 5 V
V
GS
= 4 V
T
C
= 25 °C
V
GS
= 3 V
V
GS
= 2 V
T
C
= 125 °C
T
C
= -55 °C
10
10
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
– Drain-to-Source Voltage (V)
2nd line
V
GS
– Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
Axis Title
C
iss
0.015
0.012
0.009
0.006
0.003
0
10000
1000
100
4500
3600
2700
1800
900
10000
1000
100
V
GS
= 4.5 V
C
oss
V
GS
= 10 V
C
rss
10
0
10
0
20
40
60
80
100
0
6
12
18
24
30
I
D
– Drain Current (A)
2nd line
V
DS
– Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current and Gate Volta
g
e
Capacitance
Axis Title
Axis Title
10
8
10000
1000
100
1.6
1.4
1.2
1.0
0.8
0.6
10000
1000
100
I
D
= 15 A
I
D
= 10 A
V
GS
= 10 V
6
V
GS
= 4.5 V
4
V
DS
= 10 V, 15 V, 20 V
2
0
10
10
0
12
24
36
48
60
-50 -25
0
25
50
75 100
125 150
Q
g
– Total Gate Charge (nC)
2nd line
T
J
– Junction Temperature (°C)
2nd line
Gate Char
g
e
On-Resistance vs. Junction Temperature
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3
SI4497DY
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
Axis Title
100
10
10000
1000
100
1.0
0.7
10000
1000
I
D
= 250 μA
T
J
= 150 °C
1
0.4
T
J
= 25 °C
I
D
= 5 mA
0.1
0.1
100
10
0.01
0.001
-0.2
-0.5
10
0
0.2
0.4
0.6
0.8
1.0
1.2
-50 -25
0
25
50
75 100
125 150
V
SD
– Source-to-Drain Voltage (V)
2nd line
T
J
– Temperature (°C)
2nd line
Source-Drain Diode Forward Volta
g
e
Threshold Volta
g
e
Axis Title
Axis Title
0.020
0.016
0.012
0.008
0.004
0
10000
1000
100
150
120
90
60
30
0
10000
1000
100
I
D
= 15 A
T
J
= 125 °C
T
J
= 25 °C
10
10
0
2
4
6
8
10
0.001
0.01
0.1
1
10
V
GS
– Gate-to-Source Voltage (V)
2nd line
Time (s)
2nd line
On-Resistance vs. Gate-to-Source Volta
g
e
Sin
g
le Pulse Power, Junction-to-Ambient
Axis Title
1000
10000
I
DM
limited
100
10
I
D
limited
100 μs
1000
1 ms
(1)
Limited by R
DS(on)
10 ms
1
100 ms
100
1 s
10 s
0.1
0.01
T
A
= 25 °C
DC
Single pulse
BVDSS limited
10
0.01
0.1
V
DS
– Drain-to-Source Voltage (V)
> minimum V
GS
at which R
DS(on)
is specified
1
10
100
(1)
V
GS
Safe Operatin
g
Area, Junction-to-Ambient
服务热线：400-655-8788
4
SI4497DY
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
32.0
10000
1000
100
25.6
19.2
12.8
6.4
0
10
0
30
60
90
120
150
T
C
– Case Temperature (°C)
2nd line
Current Deratin
g
a
Axis Title
Axis Title
7.0
5.6
4.2
2.8
1.4
0
10000
2.0
1.6
1.2
0.8
0.4
0
10000
1000
100
1000
100
10
10
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
– Case Temperature (°C)
2nd line
T
A
– Ambient Temperature (°C)
2nd line
Power, Junction-to-Case
Power, Junction-to-Ambient
Note
a. The
power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
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5
SI4497DY
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
1
10000
1000
100
Duty Cycle = 0.5
0.2
Notes:
P
DM
0.1
0.1
t
1
0.05
t
2
1. Duty cycle, D =
t
1
t
2
0.02
2. Per unit base = R
thJA
= 85 °C/W
(t)
3. T
JM
– T
A
= P
DM
Z
thJA
Single pulse
4. Surface mounted
0.01
0.0001
10
1000
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
1
10000
1000
100
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single pulse
0.01
0.0001
10
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Case
服务热线：400-655-8788
6
SI4497DY
S
OIC (NARROW): 8-LEAD
JEDEC P
a
rt N
u
m
b
er: M
S
-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (G
a
ge Pl
a
ne)
A
All Le
a
d
s
0.101 mm
0.004″
q
e
B
A
1
L
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A
1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
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7
SI4497DY
RECOMMENDED MINIMUM
P
A
DS FOR SO-8
0.172
(4.369)
0.028
(0.711)
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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8
SI4497DY
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data are subject to change without notice.
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representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
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any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
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aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
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Statement on certain types of applications are based on knowledge of the product is often used in a typical
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T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
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aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
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aiwan VBsemi products are not intended for use in medical, life saving,
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aiwan VBsemi such applications using client did not express their
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aiwan VBsemi people who are related to product design applications and
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oHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
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