VBsemi-Elec-SI4500BDY-T1-E3-VB
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SI4500BDY-T1-E3
Dual N-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
V
DS
(V)
R
DS(on)
(
Ω
)
I
D
(A)
7.1
Definition
0.0
19
at V
GS
= 4.5 V
0.0
26
at V
GS
= 2.5 V
•
•
•
TrenchFET
®
Power MOSFET
100 % R
g
Tested
20
6.0
Compliant to RoHS Directive 2002/95/EC
D
1
D
2
SO-8
S
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
1
G
1
2
2
S
G
G
2
1
G
Top View
S
1
S
2
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
20
12
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
T
A
= 25 °C
T
A
= 70 °C
7.1
5.7
40
1.7
2
Continuous Drain Current (T
J
= 150 °C)
a
I
D
A
I
DM
I
S
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
a
T
A
= 25 °C
T
A
= 70 °C
Maximum Power Dissipation
a
P
D
W
1.3
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Maximum Junction-to-Ambient
a
R
thJA
62.5
°C/W
Notes:
a. Surface Mounted on FR4 board, t
≤
10 s.
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1
SI4500BDY-T1-E3
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250 µA
Gate Threshold Voltage
0.6
1.5
100
1
V
V
DS
= 0
V
,
V
GS
=
12 V
Gate-Body Leakage
nA
V
DS
= 20
V
,
V
GS
= 0 V
DS
= 20
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
≥
5
V
,
V
GS
= 4.5 V
V
GS
=
4.5
V
,
I
D
= 7.1 A
V
GS
= 2.5
V
,
I
D
= 6.0 A
V
DS
= 10
V
,
I
D
= 7.1 A
I
S
= 1.7 A, V
GS
= 0 V
I
DSS
I
D(on)
Zero Gate Voltage Drain Current
µA
A
V
5
On-State Drain Current
a
20
0.019
0.026
27
Drain-Source On-State Resistance
a
R
DS(on)
Ω
Forward
T
r
ansconductance
a
Diode Forward Voltage
a
Dynamic
b
g
fs
S
V
V
SD
1.2
2.7
Q
g
Q
gs
Q
gd
R
g
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
T
u
rn-On Delay Time
Rise Time
9.5
1.5
2.5
1.6
10
V
DS
= 10
V
,
V
GS
= 4.5
V
,
I
D
= 7.1 A
f = 1 MHz
nC
Ω
t
d(on)
t
r
t
d(off)
t
f
15
V
DD
= 10
V
,
R
L
= 10
Ω
I
D
≅
1 A, V
GEN
= 4.5
V
,
R
g
= 1
0
Ω
T
u
rn-Off Delay Time
Fall Time
38
ns
25
t
rr
I
F
= 1.7 A, dI/dt = 100 A/µs
Source-Drain Reverse Recovery Time
26
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
SI4500BDY-T1-E3
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
40
40
30
20
10
0
V
= 5 V thru 3 V
GS
2.5 V
30
20
10
0
2 V
T
= 125 °C
C
25 °C
1
V
,
1
.5 V
3.5
– 55 °C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
4.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1000
800
600
400
200
0
0.10
0.08
0.06
0.04
0.02
0.00
C
iss
V
GS
= 2.5 V
C
oss
V
GS
= 4.5 V
C
rss
0
4
8
12
16
20
0
10
20
– Drain Current (A)
30
40
V
– Drain-to-Source Voltage (V)
I
D
DS
On-Resistance vs. Drain Current
Capacitance
1.6
1.4
1.2
1.0
0.8
0.6
5
4
3
2
1
0
V
I
= 4.5 V
V
D
= 10 V
GS
DS
= 7.1 A
= 7.1 A
I
D
8
10
– 50
– 25
0
25
50
75
100 125 150
0
4
2
6
Q
– Total Gate Charge (nC)
T –
Junction
T
e
mperature (°C)
J
g
Gate Charge
On-Resistance vs. Junction Temperature
服务热线：400-655-8788
3
SI4500BDY-T1-E3
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
40
0.10
0.08
0.06
0.04
0.02
0.00
I
D
= 7.1 A
T
= 150 °C
J
10
T
= 25 °C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
2
3
4
5
V
SD
– Source-to-Drain Voltage (V)
V
– Gate-to-Source Voltage (V)
GS
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
0.2
30
24
18
12
6
I
= 250
µ
A
D
0.0
– 0.2
– 0.4
– 0.6
0
0.01
– 50
– 25
0
25
50
75
100 125 150
0.10
1.00
Time (s)
10.00
T
– Temperature (°C)
J
Single Pulse Power
Threshold Voltage
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 62.5 °C/W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
30
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
服务热线：400-655-8788
4
SI4500BDY-T1-E3
S
OIC (NARROW): 8-LEAD
JEDEC P
a
rt N
u
m
b
er: M
S
-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (G
a
ge Pl
a
ne)
A
All Le
a
d
s
0.101 mm
0.004″
q
e
B
A
1
L
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A
1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
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5
SI4500BDY-T1-E3
RECOMMENDED MINIMUM
P
A
DS FOR SO-8
0.172
(4.369)
0.028
(0.711)
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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6
SI4500BDY-T1-E3
Disclaimer
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T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
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any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
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aiwan VBsemi
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aiwan demand that the Taiwan VBsemi of. Statement on whether the
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product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
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aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
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aiwan VBsemi products are not intended for use in medical, life saving,
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oHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) – modification, unless otherwise specified as inconsistent.(www.VBsemi.com)
Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
2011/65 /.
Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as
halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products
conform to confirm compliance with IEC 61249-2-21 standard level JS709A.
