VBsemi-Elec-SI4825DY-T1-E3-VB
| Part # | VBsemi-Elec-SI4825DY-T1-E3-VB |
Download  | VBsemi-Elec-SI4825DY-T1-E3-VB |
SI4825DY-T1-E3
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
I
D
(A)
d
V
DS
(V)
R
DS(on)
(
Ω
)
Q
g
(Typ.)
Available
•
•
•
T
r
enchFET
®
Power MOSFET
100 % R
g
Tested
100 % UIS Tested
0.01
1
a
t
V
GS
= – 10 V
0.01
2
at
V
GS
= – 4.5 V
– 11.6
– 10
– 30
22 nC
APPLICATIONS
•
Load Switches
– Notebook PCs
– Desktop PCs
S
SO-8
S
S
S
G
1
2
3
4
8
7
6
5
D
D
G
D
D
D
Top View
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
– 30
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
± 20
T
C
= 25 °C
C
= 70 °C
– 11.6
– 10.5
– 8.7
a, b
– 7.7
a, b
– 40
T
Continuous Drain Current (T
J
= 150 °C)
I
D
T
A
= 25 °C
T
A
= 70 °C
A
I
DM
I
S
Pulsed Drain Current
– 4.6
2.0
a, b
T
C
= 25 °C
Continuous Source-Drain Diode Current
T
A
= 25 °C
I
AS
Avalanche Current
– 20
L = 0.1 mH
E
AS
Single-Pulse Avalanche Energy
20
mJ
W
T
C
= 25 °C
T
C
= 70 °C
A
= 25 °C
T
A
= 70 °C
5.6
3.6
2.5
a, b
1.6
a, b
P
D
Maximum Power Dissipation
T
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a, c
Symbol
Typical
39
Maximum
Unit
°C/W
R
thJA
R
thJF
t
≤
10 s
Steady State
50
22
Maximum Junction-to-Foot
18
Notes:
a. Surface
mounted on 1″ x 1″ FR4 board.
b. t
= 10 s.
c. Maximum
under Steady State conditions is 85 °C/W.
d. Based
on T
C
= 25 °C.
服务热线：400-655-8788
1
SI4825DY-T1-E3
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
Δ
V
DS
/T
J
Δ
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0
V
,
I
D
= – 250 µA
I
D
= – 250 µA
Drain-Source Breakdown Voltage
– 30
V
V
DS
T
e
mperature Coefficient
– 31
5.5
mV/°C
V
GS(th)
T
e
mperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
= V
GS
, I
D
= – 250 µA
V
DS
= 0
V
,
V
GS
= ± 25 V
– 1.0
– 30
– 3.0
± 100
– 1
V
I
GSS
nA
V
DS
= – 30
V
,
V
GS
= 0 V
I
DSS
I
D(on)
R
DS(on)
g
fs
Zero Gate Voltage Drain Current
On-State Drain Current
a
µA
A
V
DS
= – 30
V
,
V
GS
= 0
V
,
T
J
= 55 °C
– 5
V
DS
≥
– 10
V
,
V
GS
= – 10 V
V
GS
= – 10
V
,
I
D
= – 10 A
V
GS
= – 4.5
V
,
I
D
= – 7 A
V
DS
= – 10
V
,
I
D
= – 10 A
0.011
0.012
23
Drain-Source On-State Resistance
a
Forward
T
r
ansconductance
a
Ω
S
Dynamic
b
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
1960
380
325
43
V
DS
= – 15
V
,
V
GS
= 0
V
, f = 1
M
Hz
pF
V
DS
= – 15
V
,
V
GS
= – 10
V
,
I
D
= – 10 A
V
DS
= – 15
V
,
V
GS
= – 4.5
V
,
I
D
= – 10 A
f = 1 MHz
65
33
Q
g
T
o
tal Gate Charge
22
nC
Q
gs
Q
gd
R
g
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
T
u
rn-On Delay Time
Rise Time
6
11
0.3
1.3
11
2.5
22
25
50
18
70
160
50
30
Ω
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= – 15
V
,
R
L
= 3
Ω
I
D
≅
– 5 A, V
GEN
= – 10
V
,
R
g
= 1
Ω
13
T
u
rn-Off DelayTime
Fall Time
32
9
ns
T
u
rn-On Delay Time
Rise Time
44
V
DD
= – 15
V
,
R
L
= 3
Ω
I
D
≅
– 5 A, V
GEN
= – 4.5
V
,
R
g
= 1
Ω
100
28
T
u
rn-Off DelayTime
Fall Time
15
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
– 4.6
– 50
– 1.2
45
A
Body Diode Voltage
I
S
= – 2 A, V
GS
= 0 V
– 0.75
28
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
ns
nC
Q
rr
t
a
20
40
I
F
= – 2 A, dI/dt = 100 A/µs, T
J
= 25 °C
13
ns
Reverse Recovery Rise Time
t
b
15
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
SI4825DY-T1-E3
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
60
5
4
3
2
1
0
V
= 10
V
thr
u
5
V
GS
50
40
30
20
10
0
V
GS
= 4
V
V
GS
= 125 °C
V
GS
= 25 °C
V
GS
= 3
V
V
GS
= – 55 °C
4
0
0
0
1
2
3
4
5
0
1
2
3
5
V
– Drain-to-So
u
rce
V
oltage (
V
)
V
– Gate-to-So
u
rce
V
oltage (
V
)
DS
GS
Output Characteristics
Transfer Characteristics
0.05
0.04
0.03
0.02
0.01
0.00
3000
2400
1
8
00
1200
600
C
iss
V
= 4.5
V
= 10
V
GS
V
GS
C
oss
C
rss
0
10
20
30
40
50
60
0
6
12
1
8
24
30
I
– Drain C
u
rrent (A)
V
– Drain-to-So
u
rce
V
oltage (
V
)
D
DS
On-Resistance vs. Drain Current
Capacitance
10
8
1.6
1.4
1.2
1.0
0.
8
0.6
V
= 10
V
I
= 10 A
DS
D
I
= 10 A
D
V
GS
= – 10
V
V
= 15
V
DS
6
V
DS
= 20
V
V
= – 4.5
V
GS
4
2
0
10
20
30
40
50
– 50
– 25
0
25
50
75
100 125 150
T
J
– J
u
nction
T
e
mperat
u
re (°C)
Q
–
T
o
tal Gate Charge (nC)
g
On-Resistance vs. Junction Temperature
Gate Charge
服务热线：400-655-8788
3
SI4825DY-T1-E3
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.10
0.0
8
0.06
0.04
0.02
0.00
I
= 10 A
D
T
J
= 150 °C
10
1
T
J
= 25 °C
0.1
0.01
T
J
= 125 °C
T
J
= 25 °C
0.001
0.0
0.2
0.4
0.6
0.
8
1.0
1.2
0
2
4
6
8
10
V
SD
– So
u
rce-to-Drain
V
oltage (
V
)
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
0
0.
8
0.6
I
= 5 mA
D
0.4
0.2
I
= 250
µ
A
D
0.0
– 0.2
– 0.4
– 50
– 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
100
1000
T
J
–
T
e
mperat
u
re (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited
b
y R
*
DS(on)
10
1
1 ms
10 ms
100 ms
1 s
0.1
10 s
DC
T
A
= 25 °C
Single P
u
lse
0.01
0.01
0.1
1
10
100
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
*
V
> minim
u
m
V
at
w
hich R
is specified
DS(on)
GS
GS
Safe Operating Area
服务热线：400-655-8788
4
SI4825DY-T1-E3
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
15
12
9
6
3
0
0
25
50
75
100
125
150
T
C
– Case
T
e
mperat
u
re (°C)
Current Derating*
7.0
5.6
4.2
2.
8
1.4
0.0
2.0
1.6
1.2
0.
8
0.4
0.0
0
0
25
50
75
100
125
150
25
50
T –
Am
b
ient
T
e
mperat
u
re (°C)
A
75
100
125
150
T
C
– Case
T
e
mperat
u
re (°C)
Power, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
服务热线：400-655-8788
5
SI4825DY-T1-E3
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
N
otes:
P
DM
0.05
t
1
t
2
t
t
1
2
0.02
1. D
u
ty Cycle, D =
2. Per Unit Base = R
=
8
5 °C/
W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
4. S
u
rface Mo
u
nted
Single P
u
lse
0.01
-4
-3
-2
-1
10
10
10
10
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P
u
lse
0.01
-4
-3
-2
-1
10
10
10
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
10
1
10
服务热线：400-655-8788
6
SI4825DY-T1-E3
S
OIC (NARROW): 8-LEAD
JEDEC P
a
rt N
u
m
b
er: M
S
-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (G
a
ge Pl
a
ne)
A
All Le
a
d
s
0.101 mm
0.004″
q
e
B
A
1
L
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A
1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
服务热线：400-655-8788
7
SI4825DY-T1-E3
RECOMMENDED MINIMUM
P
A
DS FOR SO-8
0.172
(4.369)
0.028
(0.711)
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
服务热线：400-655-8788
8
SI4825DY-T1-E3
Disclaimer
All products due to improve reliability, function or design or for other reasons, product specifications and
data are subject to change without notice.
Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their
representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
product.(www.VBsemi.com)
Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of
any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
T
aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
including a particular purpose, non-infringement and merchantability guarantee.
Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
T
aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
Unless expressly stated in writing,
T
aiwan VBsemi products are not intended for use in medical, life saving,
or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal
injury or death, use or sale of products used in
T
aiwan VBsemi such applications using client did not express their
own risk. Contact your authorized
T
aiwan VBsemi people who are related to product design applications and
other terms and conditions in writing.
The information provided in this document and the company’s products without a license, express or implied,
by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product
names and trademarks referred to herein are trademarks of their respective representatives will be all.
Material Category Policy
Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be
RoHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) – modification, unless otherwise specified as inconsistent.(www.VBsemi.com)
Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
2011/65 /.
Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as
halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products
conform to confirm compliance with IEC 61249-2-21 standard level JS709A.
