VBsemi-Elec-SI4920DY-T1-E3-VB
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SI4920DY-T1-E3
Dual N-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
TrenchFET
Power MOSFET
100 % R
g
Tested
I
D
(A)
a
8.5
V
DS
(V)
R
DS(on)
(
)
Q
g
(Typ.)
0.016 at V
GS
= 10 V
0.020 at V
GS
= 4.5 V
100 % UIS Tested
30
7.1
•
Compliant to RoHS Directive 2002/95/EC
7.6
APPLICATIONS
•
Notebook System Power
•
Low Current DC/DC
D
1
D
2
SO-8
S
G
S
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
1
1
2
2
G
G
2
1
G
S
1
S
2
Top
V
ie
w
N
-Channel MOSFET
N
-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
A
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V
DS
V
GS
Limit
30
Unit
V
20
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
8.5
7.5
7.2
b, c
5.9
b, c
30
Continuous Drain Current (T
J
= 150 °C)
I
D
Pulsed Drain Current
I
DM
I
S
A
T
C
= 25 °C
T
A
= 25 °C
2.8
1.8
b, c
30
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
I
SM
I
AS
10
5
L = 0.1 mH
E
AS
T
C
= 25 °C
T
C
= 70 °C
3.1
2.0
2.0
b, c
1.25
b, c
P
D
Maximum Power Dissipation
W
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage
T
e
mperature Range
T
J
, T
stg
°C
– 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
Symbol
R
thJA
R
thJF
Typ.
52
Max.
62.5
40
Unit
°C/W
t
10 s
Steady-State
30
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1″ x 1″ FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 110 °C/W.
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1
SI4920DY-T1-E3
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0
V
,
I
D
= 250 µA
I
D
= 250 µA
Drain-Source Breakdown Voltage
30
V
V
V
DS
T
e
mperature Coefficient
GS(th)
T
e
mperature Coefficient
3.0
mV/°C
I
D
= 250
µA
– 5.2
V
DS
= V
GS
, I
D
= 250 µA
Gate Threshold Voltage
Gate-Body Leakage
1.2
20
2.5
100
1
V
I
GSS
V
DS
= 0
V
,
V
GS
=
20 V
nA
V
DS
= 30
V
,
V
GS
= 0 V
DS
= 30
V
,
V
GS
= 0
V
,
T
J = 55 °C
V
DS
= 5
V
,
V
GS
= 10 V
I
DSS
I
D(on)
R
DS(on)
g
fs
Zero Gate Voltage Drain Current
On -State Drain Current
b
µA
A
V
10
V
GS
= 10
V
,
I
D
= 8 A
0.016
0.020
27
Drain-Source On-State Resistance
b
Forward
T
r
ansconductance
b
S
V
GS
= 4.5
V
,
I
D
= 5 A
V
DS
= 15
V
,
I
D
= 8 A
Dynamic
a
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
660
140
86
V
DS
= 15
V
,
V
GS
= 0
V
,
I
D
= 1 MHz
pF
V
DS
= 15
V
,
V
GS
= 10
V
,
I
D
= 8 A
14.5
7.1
1.9
2.7
2.6
14
22
11
Q
g
T
o
tal Gate Charge
nC
Q
gs
Q
gd
R
g
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
V
DS
= 15
V
,
V
GS
= 4.5
V
,
I
D
= 8 A
f = 1 MHz
0.5
5.2
28
80
35
24
14
20
30
14
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-On Delay Time
Rise Time
45
V
DD
= 15
V
,
R
L
= 3
I
D
5 A, V
GEN
= 4.5
V
,
R
g
= 1
T
u
rn-Off Delay Time
Fall Time
18
12
ns
T
u
rn-On Delay Time
Rise Time
7
10
V
DD
= 15
V
,
R
L
= 3
I
D
5 A, V
GEN
= 10
V
,
R
g
= 1
T
u
rn-Off Delay Time
Fall Time
15
7
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
I
S
= 2 A
2.8
30
A
Pulse Diode Forward Current
a
Body Diode Voltage
0.77
17
9
1.1
34
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
18
I
F
= 5 A, dI/dt = 100 A/µs, T
J
= 25 °C
10
7
nS
t
b
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
SI4920DY-T1-E3
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
8
40
V
GS
= 10
V
thr
u
4
V
32
24
16
8
6
V
GS
= 3
V
4
T
C
= 25 °C
2
T
C
= 125 °C
1
T
C
= – 55 °C
0
0
0
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
Transfer Characteristics
Output Characteristics
1000
8
00
600
400
200
0
0.030
0.026
0.022
0.01
8
0.014
0.010
C
iss
V
= 4.5
V
GS
C
oss
V
= 10
V
GS
C
rss
0
6
12
1
8
24
30
0
10
20
30
40
50
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
I
– Drain C
u
rrent (A)
D
Capacitance
On-Resistance vs. Drain Current and Gate Voltage
1.
8
1.6
1.4
1.2
1.0
0.
8
0.6
10
I
=
8
A
D
I
=
8
A
D
8
V
= 10
V
GS
V
DS
= 10
V
6
V
= 20
V
DS
V
GS
= 4.5
V
V
= 15
V
DS
4
2
0
0.0
– 50
– 25
0
25
50
75
100 125 150
3.2
6.4
9.6
12.
8
16
T
J
– J
u
nction
T
e
mperat
u
re (°C)
Q
g
–
T
o
tal Gate Charge (nC)
On-Resistance vs. Junction Temperature
Gate Charge
服务热线：400-655-8788
3
SI4920DY-T1-E3
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.10
100
10
1
I
=
8
A
D
T
J
= 150 °C
0.0
8
0.06
0.04
0.02
0.00
T
J
= 25 °C
0.1
0.01
T
J
= 125 °C
T
= 25 °C
9
J
0.001
0.0
0.2
0.4
0.6
0.
8
1.0
1.2
0
1
2
3
4
5
6
7
8
10
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
V
SD
– So
u
rce-to-Drain
V
oltage (
V
)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.5
0.2
50
40
30
20
10
0
– 0.1
– 0.4
– 0.7
– 1.0
I
= 5 mA
D
I
= 250
µ
A
D
– 50
– 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
Time (s)
T
J
–
T
e
mperat
u
re (°C)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited
b
y R
*
DS(on)
10
1
1 ms
10 ms
100 ms
0.1
1 s
10 s
DC
T
= 25 °C
A
Single P
u
lse
B
V
DSS Limited
0.01
0.01
0.1
1
10
100
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
*
V
> minim
u
m
V
at
w
hich R
is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
服务热线：400-655-8788
4
SI4920DY-T1-E3
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
8
6
4
2
0
0
25
50
75
100
125
150
T
C
– Case
T
e
mperat
u
re (°C)
Current Derating*
4.0
3.2
2.4
1.6
0.
8
0.0
1.5
1.2
0.9
0.6
0.3
0.0
0
25
50
75
100
125
150
0
25
50
T –
Am
b
ient
T
e
mperat
u
re (°C)
A
75
100
125
150
T
C
– Case
T
e
mperat
u
re (°C)
Power Derating, Junction-to-Ambient
Power Derating, Junction-to-Foot
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
服务热线：400-655-8788
5
SI4920DY-T1-E3
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
N
otes:
P
DM
0.05
t
1
t
2
t
t
1
2
0.02
1. D
u
ty Cycle, D =
2. Per Unit Base = R
= 110 °C/
W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
Single P
u
lse
4. S
u
rface Mo
u
nted
0.01
-4
-3
-2
-1
10
10
10
10
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P
u
lse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
服务热线：400-655-8788
6
SI4920DY-T1-E3
S
OIC (NARROW): 8-LEAD
JEDEC P
a
rt N
u
m
b
er: M
S
-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (G
a
ge Pl
a
ne)
A
All Le
a
d
s
0.101 mm
0.004″
q
e
B
A
1
L
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A
1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
服务热线：400-655-8788
7
SI4920DY-T1-E3
RECOMMENDED MINIMUM
P
A
DS FOR SO-8
0.172
(4.369)
0.028
(0.711)
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
服务热线：400-655-8788
8
SI4920DY-T1-E3
Disclaimer
All products due to improve reliability, function or design or for other reasons, product specifications and
data are subject to change without notice.
Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their
representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
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Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of
any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
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aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
including a particular purpose, non-infringement and merchantability guarantee.
Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
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aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
Unless expressly stated in writing,
T
aiwan VBsemi products are not intended for use in medical, life saving,
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aiwan VBsemi such applications using client did not express their
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aiwan VBsemi people who are related to product design applications and
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Material Category Policy
Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be
oHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) – modification, unless otherwise specified as inconsistent.(www.VBsemi.com)
Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
2011/65 /.
Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as
halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products
conform to confirm compliance with IEC 61249-2-21 standard level JS709A.
