VBsemi-Elec-SI7148DP-VB
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SI7148DP
N-Channel 80 V (D-S) MOSFET
FEATURES
• TrenchFET
®
power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(
Ω
) Max.
0.00
48
at V
GS
= 10 V
0.00
50
at V
GS
= 7.5 V
0.00
64
at V
GS
= 4.5 V
I
D
(A)
a
60
Q
g
(Typ.)
• 100 % R
g
and UIS tested
80
60
25 nC
APPLICATIONS
60
• Primary side switching
• Synchronous rectification
• DC/AC inverters
D
DFN5X6
Top View
Top View
Bottom View
1
8
G
2
3
7
6
4
5
S
N-Channel MOSFET
PIN1
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
80
Unit
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
V
GS
20
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
60
a
60
a
23.8
b, c
19
b, c
100
Continuous Drain Current (T
J
= 150 °C)
I
D
A
Pulsed Drain Current (t = 300 μs)
I
DM
I
S
T
C
= 25 °C
60
a
5.6
b, c
Continuous Source-Drain Diode Current
T
A
= 25 °C
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
I
AS
35
L = 0.1 mH
E
AS
61
mJ
W
T
C
= 25 °C
104
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
66.6
6.25
b, c
4
b, c
Maximum Power Dissipation
P
D
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d, e
T
J
, T
stg
-55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, f
Symbol
R
thJA
Typical
Maximum
Unit
t
≤
10 s
15
20
°C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
0.9
1.2
Notes
a. Package
limited.
b. Surface
mounted on 1″ x 1″ FR4 board.
c. t
= 10 s.
d.
copper (not plated) as a result of the singulation
The DFN 5X
x6 is a leadless package. The end of the lead terminal is exposed
e guaranteed and is not required to ensure adequate
process in manufacturing. A solder fillet at the exposed copper tip cannot b
bottom side solder interconnection.
e. Rework
conditions: Manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum
under steady state conditions is 54 °C/W.
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1
SI7148DP
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V
DS
Δ
V
DS
/T
J
Δ
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
80
–
–
–
–
V
V
DS
Temperature Coefficient
47
mV/°C
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
–
-5.7
–
V
DS
= V
GS
, I
D
= 250 μA
1.2
–
–
2.8
100
1
V
I
GSS
V
DS
= 0 V, V
GS
=
20 V
–
nA
V
DS
= 80 V, V
GS
= 0 V
V
DS
= 80 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
–
–
–
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
μA
A
–
10
–
I
D(on)
30
–
–
V
GS
= 10 V, I
D
= 20 A
0.0048
0.0050
0.0064
68
–
Drain-Source On-State Resistance
a
R
DS(on)
g
fs
V
GS
= 7.5 V, I
D
= 20 A
–
–
Ω
V
GS
= 4.5 V, I
D
= 15 A
–
–
Forward Transconductance
a
Dynamic
b
V
DS
= 10 V, I
D
= 20 A
–
–
S
Input Capacitance
C
iss
C
oss
C
rss
–
–
2800
1100
93
57
42
25
8.5
10
70
0.95
9
–
–
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 40 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 40 V, V
GS
= 10 V, I
D
= 20 A
pF
–
–
–
86
63
38
–
Total Gate Charge
Q
g
V
DS
= 40 V, V
GS
= 7.5 V, I
D
= 20 A
–
–
nC
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
Q
oss
R
g
V
DS
= 40 V, V
GS
= 4.5 V, I
D
= 20 A
–
–
–
Output Charge
V
DS
= 40 V, V
GS
= 0 V
f = 1 MHz
–
105
1.9
18
24
68
14
32
30
64
16
Gate Resistance
0.3
–
Ω
Turn-On Delay Time
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Rise Time
–
12
34
7
V
DD
= 40 V, R
L
= 2
Ω
I
D
≅
20 A, V
GEN
= 10 V, R
g
= 1
Ω
Turn-Off Delay Time
–
Fall Time
–
ns
Turn-On Delay Time
–
16
15
32
8
Rise Time
–
V
DD
= 40 V, R
L
= 2
Ω
I
D
≅
20 A, V
GEN
= 7.5 V, R
g
= 1
Ω
Turn-Off Delay Time
–
Fall Time
–
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
I
S
= 5 A
–
–
–
–
–
–
–
–
–
60
100
1.1
105
130
–
A
0.73
53
65
25
28
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
I
F
= 20 A, dI/dt = 100 A/μs, T
J
= 25 °C
ns
t
b
–
Notes
a. Pulse
test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed
by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
SI7148DP
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
80
60
40
20
0
100
80
60
40
20
0
V
GS
= 10 V thru 4 V
T
C
= 25
°
C
T
C
= 125
°
C
V
GS
= 3 V
T
C
= – 55
°
C
V
GS
= 2 V
0
1
2
3
4
5
0
1
2
3
4
5
V
D
S
– Drain-to-
S
ource Voltage (V)
V
GS
–
G
ate-to-
S
ource Voltage (V)
Output Characteristics
Transfer Characteristics
4500
3600
2700
1800
900
0.008
0.007
0.006
0.005
0.004
0.003
C
i
ss
V
GS
= 4.5 V
C
o
ss
V
GS
= 7.5 V
V
GS
= 10 V
C
r
ss
0
0
16
32
48
64
80
0
20
40
60
80
100
I
D
– Drain Current (A)
V
D
S
– Drain-to-
S
ource Voltage (V)
On-Resistance vs. Drain Current
Capacitance
10
8
2.0
1.7
1.4
1.1
0.8
0.5
I
D
= 20 A
I
D
= 20 A
V
GS
= 10 V
V
D
S
= 30 V
6
V
D
S
= 40 V
V
GS
= 4.5 V
V
D
S
= 50 V
4
2
0
0
12
24
36
48
60
– 50
– 25
0
25
50
75
100
125
150
T
J
– Junction Temperature (
°
C)
Q
g
– Total
G
ate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
服务热线：400-655-8788
3
SI7148DP
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
10
0.030
0.024
0.018
0.012
0.006
0
I
D
= 20 A
T
J
= 150
°
C
T
J
= 25 °C
1
0.1
T
J
= 125
°
C
0.01
0.001
T
J
= 25
°
C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
GS
–
G
ate-to-
S
ource Voltage (V)
V
S
D
–
S
ource-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
0.2
200
160
120
80
– 0.1
– 0.4
– 0.7
– 1.0
I
D
= 5 mA
I
D
= 250 μA
40
0
– 50
– 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
J
– Temperature (
°
C)
Time (
s
)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
I
DM
Limited
1 m
s
10
I
D
Limited
10 m
s
1
0.1
100 m
s
Limited by R
D
S
(on)
*
1
s
10
s
T
A
= 25 °C
S
ingle Pul
s
e
DC
BVD
SS
Limited
0.01
0.01
0.1
1
10
100
V
D
S
– Drain-to-
S
ource Voltage (V)
* V
GS
> minimum V
GS
at which R
D
S
(on)
i
s s
pecified
Safe Operating Area, Junction-to-Ambient
服务热线：400-655-8788
4
SI7148DP
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
120
96
72
48
Package Limited
24
0
0
25
50
75
100
125
150
T
C
– Ca
s
e Temperature (
°
C)
Current Derating*
3.0
2.4
1.8
1.2
0.6
125
100
75
50
25
0
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
– Ca
s
e Temperature (°C)
T
A
– Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J (max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
服务热线：400-655-8788
5
SI7148DP
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
Note
s
:
0.1
0.1
P
DM
0.05
t
1
t
2
t
1
1. Duty Cycle, D =
t
2
2. Per Unit Ba
s
e = R
= 54 °C/W
0.02
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
S
ingle Pul
s
e
4.
S
urface Mounted
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Sq
uare Wave Pul
s
e Duration (
s
)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
S
ingle Pul
s
e
0.1
0.01
0.0001
0.001
0.01
0.1
1
10
Sq
uare Wave Pul
s
e Duration (
s
)
Normalized Thermal Transient Impedance, Junction-to-Case
服务热线：400-655-8788
6
SI7148DP
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T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
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any goods or continuous production.
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o
t
he maximum extent permitted by applicable law on
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aiwan VBsemi
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including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
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aiwan demand that the Taiwan VBsemi of. Statement on whether the
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Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
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aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
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