VBsemi-Elec-SI7850DP-T1-E3-VB
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SI7850DP-T1-E3
N-Channel 60-V (D-S) MOSFET
FEATURES
•
Halogen-free According to IEC 61249-2-21
Available
TrenchFET
®
Power MOSFET
100 % R
Tested
g
100 % UIS Tested
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
max. (
) at V
GS
= 10 V
R
DS(on)
max. (
) at V
GS
= 4.5 V
Q
g
typ. (nC)
60
•
•
•
0.024
0.028
5.2
I
D
(A)
15
a, g
APPLICATIONS
Configuration
Single
•
Battery Switch
•
DC/DC Converter
D
DFN5X6
Top View
Top View
Bottom View
1
8
2
3
7
6
G
4
5
PIN1
S
N
-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
60
UNIT
Drain-source voltage
Gate-source voltage
V
DS
V
GS
V
20
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
15
a
9
a
Continuous drain current (T
J
= 150 °C)
I
D
10.3
b, c
8.1
b, c
40
A
Pulsed drain current (t = 100 μs)
I
DM
I
S
T
C
= 25 °C
T
A
= 25 °C
12
a
3
b, c
Continuous source-drain diode current
Single pulse avalanche current
Single pulse avalanche energy
I
AS
E
AS
15
11.3
35.7
22.9
L = 0.1 mH
mJ
W
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Maximum power dissipation
P
D
3.6
b, c
2.3
b, c
-55 to +150
260
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
c
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient
b
SYMBOL
R
thJA
R
thJC
TYPICAL
25
MAXIMUM
UNIT
t
10 s
Steady state
35
3.5
°C/W
Maximum junction-to-case (drain)
2.7
Notes
a. Package
limited
b. Surface
mounted on 1″ x 1″ FR4 board
c. t
= 10 s
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1
SI7850DP-T1-E3
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
60
–
–
–
–
V
V
DS
temperature coefficient
33
mV/°C
V
GS(th)
temperature coefficient
Gate-source threshold voltage
Gate-source leakage
–
-4.8
–
V
DS
= V
GS
, I
D
= 250 μA
1
–
–
2.8
100
1
V
I
GSS
V
DS
= 0 V, V
GS
=
20 V
–
nA
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 60 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
5 V, V
GS
=10 V
–
–
–
Zero gate voltage drain current
On-state drain current
a
I
DSS
I
D(on)
R
DS(on)
g
fs
μA
A
–
10
–
10
–
–
–
V
GS
=10 V, I
D
= 10 A
0.024
0.028
39
Drain-source on-state resistance
a
S
–
V
GS
= 4.5 V, I
D
= 5 A
–
Forward transconductance
a
Dynamic
b
V
DS
= 10 V, I
D
= 10 A
–
–
Input capacitance
C
iss
C
oss
C
rss
–
–
790
330
14
–
–
Output capacitance
Reverse transfer capacitance
V
DS
= 30 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 30 V, V
GS
= 10 V, I
D
= 5 A
pF
–
–
–
11.1
5.2
2.2
1.1
0.6
7
17
8
Total gate charge
Q
g
–
nC
Gate-source charge
Gate-drain charge
Q
gs
Q
gd
R
g
V
DS
= 30 V, V
GS
= 4.5 V, I
D
= 5 A
–
–
–
–
Gate resistance
f = 1 MHz
0.1
–
1.2
15
40
20
20
25
50
20
45
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Rise time
–
21
V
DD
= 30 V, R
L
= 6
, I
D
5 A,
V
GEN
= 10 V, R
g
= 1
Turn-off delay time
–
10
Fall time
–
10
ns
Turn-on delay time
–
13
Rise time
–
25
V
DD
= 30 V, R
L
= 6
, I
D
5 A,
V
GEN
= 4.5 V, R
g
= 1
Turn-off delay time
–
10
Fall time
–
22
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
Body diode voltage
=
–
40
1.2
60
120
–
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
–
–
–
–
–
–
–
15
–
A
I
S
= 5 A, V
GS
= 0 V
0.79
30
60
15
15
V
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
ns
nC
Q
rr
t
a
I
F
= 5 A, di/dt = 100 A/μs, T
J
= 25 °C
ns
t
b
–
Notes
a. Pulse
test; pulse width
300 μs, duty cycle
2 %
b. Guaranteed
by design, not subject to production testing
服务热线：400-655-8788
2
SI7850DP-T1-E3
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
Axis Title
40
30
20
10
0
10000
1000
100
40
30
20
10
0
10000
1000
100
V
GS
= 10 V thru 4 V
T
C
= 25 °C
V
GS
= 3 V
T
C
= 125 °C
T
C
= -55 °C
10
10
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
– Drain-to-Source Voltage (V)
2nd line
V
GS
– Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
Axis Title
0.04
0.03
0.02
0.01
0
10000
1000
100
1200
900
600
300
0
10000
1000
100
V
GS
= 4.5 V
C
iss
V
GS
= 10 V
C
oss
C
rss
10
10
0
10
20
30
40
0
10
20
30
40
50
60
I
D
– Drain Current (A)
2nd line
V
DS
– Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current and Gate Volta
g
e
Capacitance
Axis Title
Axis Title
10
8
10000
1000
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10000
1000
100
I
D
= 10 A
V
GS
= 10 V
I
D
= 10 A
V
DS
= 30 V
6
V
GS
= 4.5 V
V
DS
= 15 V
V
DS
= 48 V
4
2
0
10
10
0
3
6
9
12
-50 -25
0
25
50
75 100
125 150
Q
g
– Total Gate Charge (nC)
2nd line
T
J
– Junction Temperature (°C)
2nd line
Gate Char
g
e
On-Resistance vs. Junction Temperature
服务热线：400-655-8788
3
SI7850DP-T1-E3
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
Axis Title
100
10
1
10000
1000
100
2.2
2.0
1.8
1.6
1.4
1.2
1.0
10000
1000
100
T
J
= 150 °C
T
J
= 25 °C
I
D
= 250 μA
0.1
10
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-50 -25
0
25
50
75 100
125 150
V
SD
– Source-to-Drain Voltage (V)
2nd line
T
J
– Temperature (°C)
2nd line
Source-Drain Diode Forward Volta
g
e
Threshold Volta
g
e
Axis Title
Axis Title
2.2
2.0
1.8
1.6
1.4
1.2
1.0
10000
10000
50
40
30
20
10
0
10000
1000
100
1000
1000
100
10
I
D
= 250 μA
10
1000
-50 -25
0
25
50
75 100
125 150
0.001 0.01
0.1
1
10
100
T
J
– Temperature (°C)
2nd line
Time (s)
2nd line
Threshold Volta
g
e
Sin
g
le Pulse Power, Junction-to-Ambient
Axis Title
Limited by R
DS(on)
Axis Title
I
DM
Limited
(1)
100
10000
50
40
30
20
10
0
10000
1000
100
I
D(ON)
Limited
10
100 μs
1000
1 ms
10 ms
1
0.1
100
100 ms
1 s
10 s
DC
T
A
= 25 °C
Single pulse
0.01
10
10
0.1
1
10
V
DS
– Drain-to-Source Voltage (V)
> minimum V
GS
at which R
DS(on)
is specified
100
0
25
50
75
100
125
150
T
C
– Case Temperature (°C)
2nd line
(1)
V
GS
Power, Junction-to-Case
Safe Operatin
g
Area, Junction-to-Ambient
服务热线：400-655-8788
4
SI7850DP-T1-E3
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
40
30
20
10
0
10000
1000
100
Note
a. The
power dissipation P
D
is based on T
J
max. = 150 °C, using
junction-to-case thermal resistance, and is more useful in
settling the upper dissipation limit for cases where additional
heatsinking is used. It is used to determine the current rating,
when this rating falls below the package limit
Package limited
10
0
25
50
75
100
125
150
T
C
– Case Temperature (°C)
2nd line
Current Deratin
g
a
Axis Title
1
10000
1000
100
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single pulse
0.01
0.01
0.0001
10
1000
0.001
0.1
1
10
100
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
1
10000
Duty Cycle = 0.5
0.2
0.1
1000
100
10
0.1
0.05
0.02
Single pulse
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Foot
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
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5
SI7850DP-T1-E3
Disclaimer
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T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
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aiwan
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RoHS compliant and meets the definition of restrictions under Directive of the European Parliament
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