VBsemi-Elec-SI9945ADY-T1-E3-VB
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SI9945ADY-T1-E3
Dual N-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET
®
power MOSFET
• 100 % R
g
and UIS tested
PRODUCT SUMMARY
V
DS
(V)
60
0.0
28
0.0
30
7
R
DS(on)
(
Ω
) at V
GS
= 10 V
R
DS(on)
(
Ω
) at V
GS
= 4.5 V
I
D
(A) per leg
Configuration
Dual
S
O-8 Dual
D
2
D
1
D
2
D
2
6
5
D
1
7
D
1
8
G
1
G
2
4
G
2
3
S
S
S
2
1
2
2
1
S
1
N-Channel MOSFET
N-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
DS
60
V
V
GS
20
T
C
= 25 °C
7
Continuous Drain Current
I
D
T
C
= 125 °C
4
Continuous Source Current (Diode Conduction)
a
Pulsed Drain Current
b
I
S
3.6
A
I
DM
I
AS
28
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
18
L = 0.1 mH
T
C
= 25 °C
E
AS
16.2
mJ
W
4
1.3
Maximum Power Dissipation
b
P
D
T
C
= 125 °C
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to +175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
R
thJA
LIMIT
110
34
UNIT
Junction-to-Ambient
PCB Mount
c
°C/W
Junction-to-Foot (Drain)
R
thJF
Notes
a. Package
limited.
b. Pulse
test; pulse width
≤
300 μs, duty cycle
≤
2 %.
c. When
mounted on 1″ square PCB (FR4 material).
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1
SI9945ADY-T1-E3
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
60
–
–
V
1.5
2.0
2.5
V
DS
= 0 V, V
GS
V
GS
= 0 V
GS
= 0 V
=
20 V
–
–
–
100
1
nA
μA
A
V
DS
= 60 V
–
–
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
V
V
DS
= 60 V, T
J
= 125 °C
V
DS
= 60 V, T
J
= 175 °C
V
DS
≥
5 V
–
50
150
–
V
GS
= 0 V
–
–
I
D(on)
V
GS
= 10 V
20
–
V
GS
= 10 V
V
GS
= 10 V
GS
= 10 V
I
D
= 4.5 A-
0.028
0.066
0.081
0.030
15
–
–
I
D
= 4.5 A, T
J
= 125 °C
I
D
= 4.5 A, T
J
= 175 °C
I
D
= 4 A-
–
–
Drain-Source On-State Resistance
a
R
DS(on)
Ω
V
–
–
V
GS
= 4.5 V
Forward Transconductance
f
Dynamic
b
g
fs
V
DS
= 15 V, I
D
= 4.5 A
–
–
S
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
C
iss
C
oss
C
rss
Q
g
–
–
600
110
50
750
140
62
V
GS
= 0 V
V
DS
= 25 V, f = 1 MHz
pF
–
–
11.7
1.8
2.8
–
18
Q
gs
Q
gd
R
g
V
GS
= 10 V
V
DS
= 30 V, I
D
= 5.3 A
f = 1 MHz
–
2.7
4.2
6
nC
–
1.3
–
Ω
Turn-On Delay Time
c
Rise Time
c
t
d(on)
t
r
t
d(off)
t
f
7
11
–
3.3
22.4
2.1
5
V
DD
= 30 V, R
L
= 6.8
Ω
I
D
≅
4.4 A, V
GEN
= 10 V, R
g
= 1
Ω
ns
Turn-Off Delay Time
c
Fall Time
c
–
33.5
3.2
–
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
–
–
–
28
A
V
Forward Voltage
V
SD
I
F
= 2 A, V
GS
= 0 V
0.75
1.1
Notes
a. Pulse
test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed
by design, not subject to production testing.
c. Independent
of operating temperature.
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2
SI9945ADY-T1-E3
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
30
24
18
12
6
30
24
18
12
6
V
= 10 V thru 5 V
GS
V
= 4 V
GS
T
= 25 °C
C
V
= 3 V
GS
T
= 125 °C
C
T
= – 55 °C
C
0
0
0
2
4
6
8
10
15
60
0
0
0
1
2
3
4
5
V
D
S
– Drain-to-
S
ource Voltage (V)
V
GS
–
G
ate-to-
S
ource Voltage (V)
Output Characteristics
Transfer Characteristics
0.10
0.08
0.06
0.04
0.02
0
25
20
15
10
5
T
= -55 °C
C
T
= 25 °C
C
V
= 4.5 V
= 10 V
GS
T
= 125 °C
C
V
GS
0
6
12
18
24
30
0
3
6
9
12
I
D
– Drain Current (A)
I
– Drain Current (A)
D
Transconductance
On-Resistance vs. Drain Current
1000
800
600
400
200
0
10
8
I
= 5.3 A
D
V
= 30 V
D
S
C
i
ss
6
4
C
2
o
ss
C
r
ss
0
0
10
20
30
40
50
2
4
6
8
10
12
V
D
S
– Drain-to-
S
ource Voltage (V)
Q
g
– Total
G
ate Charge (nC)
Capacitance
Gate Charge
服务热线：400-655-8788
3
SI9945ADY-T1-E3
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
2.0
1.7
1.4
1.1
0.8
0.5
75
72
69
66
63
60
I
= 5.3 A
D
V
= 10 V
I
= 1 mA
GS
D
V
= 4.5 V
GS
– 50
– 25
0
25
50
75 100
125 150 175
– 50
– 25
0
25
50
75 100
125 150 175
T
J
– Junction Temperature (°C)
T
J
– Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Drain Source Breakdown vs. Junction Temperature
100
10
1
0.25
0.20
0.15
0.10
0.05
0
T
= 150 °C
J
T
= 25 °C
J
0.1
0.01
T
= 150 °C
J
T
= 25 °C
8
J
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
10
V
GS
–
G
ate-to-
S
ource Voltage (V)
V
S
D
–
S
ource-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.6
0.3
0
-0.3
-0.6
-0.9
-1.2
I
= 5 mA
D
I
= 250 μA
D
-50
-25
0
25
50
75 100
125 150 175
T
J
– Temperature (°C)
Threshold Voltage
服务热线：400-655-8788
4
SI9945ADY-T1-E3
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
I
Limited
DM
Limited by R
*
DS(on)
10
1
100 µs
1 ms
10 ms
100 ms
1 s
10 s, DC
0.1
T
C
= 25 °C
Single Pulse
BVDSS Limited
0.01
0.01
0.1
1
10
100
V
D
S
– Drain-to-
S
ource Voltage (V)
* V
GS
> minimum V
GS
at which R
D
S
(on)
i
s s
pecified
Safe Operating Area
2
1
D
u
ty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. D
u
ty Cycle, D =
0.02
2. Per Unit Base = R
= 110 °C/W
thJA
(t)
3.
T
JM
–
T =
P
Z
A
DM thJA
Single P
u
lse
4. S
u
rface Mo
u
nted
0.01
–
4
10
–
3
10
–
2
10
–
1
10
1
10
100
600
Sq
u
are Wave P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
服务热线：400-655-8788
5
SI9945ADY-T1-E3
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
2
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P
u
lse
0.01
–
4
10
–
3
10
–
2
10
–
1
10
1
10
Sq
u
are Wave P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
服务热线：400-655-8788
6
SI9945ADY-T1-E3
S
OIC (NARROW): 8-LEAD
JEDEC P
a
rt N
u
m
b
er: M
S
-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (G
a
ge Pl
a
ne)
A
All Le
a
d
s
0.101 mm
0.004″
q
e
B
A
1
L
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A
1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
服务热线：400-655-8788
7
SI9945ADY-T1-E3
RECOMMENDED MINIMUM
P
A
DS FOR SO-8
0.172
(4.369)
0.028
(0.711)
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
服务热线：400-655-8788
8
SI9945ADY-T1-E3
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T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
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o
t
he maximum extent permitted by applicable law on
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aiwan VBsemi
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aiwan demand that the Taiwan VBsemi of. Statement on whether the
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Parameter data sheets and technical specifications can be provided may vary depending on the application and
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aiwan
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