VBsemi-Elec-SM3303PSQG-VB
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SM3303PSQG
P-Channel 30 V (D-S) MOSFET
FEATURES
–
30
11
m
Ω
18
–
45
V
•
Halogen-free According to IEC 61249-2-21
Definition
V
DS
R
DS(on),typ
V
GS
=10V
R
DS(on),typ
V
GS
=4.5V
•
•
T
r
enchFET
®
Power MOSFET
Low Thermal Resistance Power
P
A
K
®
Package with Small Size and Low 1.07 mm
Profile
m
Ω
A
I
D
•
•
100 % R
g
and UIS
T
e
sted
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
•
•
•
Load Switch
Adaptor Switch
Notebook PC
DFN 3×3 EP
S
Bottom View
Top View
Top View
G
1
8
2
3
7
6
4
5
D
Pin 1
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
A
Parameter
Symbol
V
DS
Limit
– 30
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
20
T
C
= 25 °C
–
4
5
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
– 30
Continuous Drain Current (T
J
= 150 °C)
I
D
– 14.4
a, b
– 11.5
a, b
– 60
A
I
DM
I
S
Pulsed Drain Current
– 35
e
– 3.2
a, b
T
C
= 25 °C
T
A
= 25 °C
Continuous Source-Drain Diode Current
I
AS
– 25
Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
E
AS
31.25
52
mJ
W
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
4
3
P
D
Maximum Power Dissipation
3.8
a, b
2.4
a, b
– 50 to 150
260
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
Soldering Recommendations (Peak
T
e
mperature)
c, d
°C
Notes:
a. Surface mounted on 1″ x 1″ FR4 board.
b. t = 10 s.
c.Rework conditions: manual
soldering with a soldering iron is not recommended for leadless components.
d.Package limited.
e.Based on T
C
= 25 °C
服务热线：400-655-8788
1
SM3303PSQG
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a, b
Maximum Junction-to-Case (Drain)
Symbol
R
thJA
Typical
26
Maximum
Unit
t
≤
10 s
Steady State
33
°C/W
R
thJC
1.9
2.4
Notes:
a. Surface
mounted on 1″ x 1″ FR4 board.
b. Maximum
under Steady State conditions is 81 °C/W.
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
Δ
V
DS
/T
J
Δ
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0
V
,
I
D
= – 250 µA
I
D
= – 250 µA
Drain-Source Breakdown Voltage
V
DS
T
e
mperature Coefficient
– 30
V
– 20
5
mV/°C
V
GS(th)
T
e
mperature Coefficient
V
DS
= V
GS
, I
D
= – 250 µA
Gate-Source Threshold Voltage
Gate-Source Leakage
– 1.5
– 2.8
100
– 1
V
I
GSS
V
DS
= 0
V
,
V
GS
=
20 V
nA
V
DS
= – 30
V
,
V
GS
= 0 V
V
DS
= – 30
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
≤
– 5
V
,
V
GS
= – 10 V
I
DSS
I
D(on)
R
DS(on)
g
fs
Zero Gate Voltage Drain Current
On-State Drain Current
a
µA
A
– 10
– 20
V
GS
= – 10
V
,
I
D
= – 14.4 A
V
GS
= – 4.5
V
,
I
D
= – 11.5 A
V
DS
= – 15
V
,
I
D
= – 14.4 A
11
1
8
37
Drain-Source On-State Resistance
a
m
Ω
S
Forward
T
r
ansconductance
a
Dynamic
b
C
iss
C
oss
C
rss
Input Capacitance
2000
385
V
DS
= – 15
V
,
V
GS
= 0
V
, f = 1
M
Hz
Output Capacitance
Reverse
T
r
ansfer Capacitance
pF
322
V
DS
= – 15
V
,
V
GS
= – 10
V
,
I
D
= – 14.4 A
15
14
Q
g
T
o
tal Gate Charge
nC
Q
gs
Q
gd
R
g
V
DS
= – 15
V
,
V
GS
= – 4.5
V
,
I
D
= – 14.4 A
f = 1 MHz
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
T
u
rn-On Delay Time
Rise Time
7
9
0.4
1.8
50
43
30
14
14
9
3.6
75
65
45
21
21
18
54
20
Ω
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= – 15
V
,
R
L
= 1.5
Ω
I
D
≅
– 10 A, V
GEN
= – 4.5
V
,
R
g
= 1
Ω
T
u
rn-Off DelayTime
Fall Time
ns
T
u
rn-On Delay Time
Rise Time
V
DD
= – 15
V
,
R
L
= 1.5
Ω
I
D
≅
– 10 A, V
GEN
= – 10
V
,
R
g
= 1
Ω
T
u
rn-Off DelayTime
Fall Time
36
10
Drain-Source Body Diode Characteristics
– 35
e
– 60
– 1.2
47
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
I
F
= – 10 A
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
A
– 0.8
31
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
30
45
I
F
= – 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
15
ns
t
b
16
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
SM3303PSQG
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
60
45
30
15
0
1.2
0.9
0.6
0.3
0.0
V
= 10
V
thr
u
5
V
GS
125 ºC
4
V
25 ºC
– 55 ºC
0
3
6
9
12
15
0
1
2
3
4
V
– Drain-to-So
u
rce
V
oltage (
V
)
V
–
Gate-to-So
u
rce
V
oltage (
V
)
DS
GS
Output Characteristics
Transfer Characteristics
3600
3000
2400
1
8
00
1200
600
0.030
0.025
0.020
0.015
0.010
0.005
0.000
C
iss
V
= 4.5
V
GS
V
GS
= 10
V
C
oss
C
rss
0
0
6
12
1
8
24
30
0
10
20
30
40
50
60
V
– Drain-So
u
rce
V
oltage (
V
)
DS
I
D
– Drain C
u
rrent (A)
Capacitance
On-Resistance vs. Drain Current and Gate Voltage
10
1.
8
1.5
1.2
0.9
0.6
I
= 14.4 A
D
8
6
4
2
0
V
= 15
V
, I
= 14.4 A
D
DS
V
= 10
V
GS
V
= 4.5
V
GS
V
= 24
V
, I
= 14.4 A
D
DS
– 50
– 25
0
25
50
75
100 125 150
0
10
20
30
40
50
T
– J
u
nction Temperat
u
re (ºC)
Q
– Total Gate Charge (nC)
J
g
On-Resistance vs. Junction Temperature
Gate Charge
服务热线：400-655-8788
3
SM3303PSQG
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.04
0.03
0.02
0.01
0.00
T
= 150 ºC
J
10
T =
25 ºC
T
= 125 ºC
J
J
1
T
= 25 ºC
J
0.1
0.0
0.2
0.4
0.6
0.
8
1.0
1.2
0
2
4
6
8
10 12 14 16 1
8
20
V
– Gate-to-So
u
rce
V
oltage (
V
)
V
– So
u
rce-to-Drain
V
oltage (
V
)
GS
SD
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
0
2.4
2.2
2.0
1.
8
1.6
1.4
1.2
I
= 250
µ
A
D
– 50
– 25
0
25
50
75
100 125 150
0.01
0.1
1.0
10
100
1000
T
– Temperat
u
re (ºC)
J
Time (s)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited
b
y R
10
*
100
µ
s
DS(on)
1 ms
10ms
1
100 ms
1 s
10 s
0.1
T
= 25 ºC
DC
A
B
V
DSS Limited
Single P
u
lse
0.01
0.1
1
10
10
V
– Drain-to-So
u
rce
V
oltage (
V
)
DS
*
V
> minim
u
m
V
at
w
hich R
is Specified
GS
GS
DS(on)
Safe Operating Area, Junction-to-Ambient
服务热线：400-655-8788
4
SM3303PSQG
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
60
50
40
30
20
10
0
0
25
50
75
100
125
150
T
C
– CaseTemperat
u
re (°C)
Current Derating*
75
60
45
30
15
0
2
1.5
1
0.5
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
– Case Temperat
u
re (ºC)
C
T
– Am
b
ient Temperat
u
re (ºC)
A
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
服务热线：400-655-8788
5
SM3303PSQG
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
N
otes:
P
DM
0.05
t
1
t
2
t
t
1
2
0.02
1. D
u
ty Cycle, D =
2. Per Unit Base = R
= 50 °C/
W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
Single P
u
lse
4. S
u
rface Mo
u
nted
0.01
-4
-3
-2
-1
10
10
10
10
S
qu
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
1000
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P
u
lse
0.01
-4
-3
-2
-1
10
10
10
S
qu
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
服务热线：400-655-8788
6
SM3303PSQG
Disclaimer
All products due to improve reliability, function or design or for other reasons, product specifications and
data are subject to change without notice.
Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their
representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
product.(www.VBsemi.com)
Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of
any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
T
aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
including a particular purpose, non-infringement and merchantability guarantee.
Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
T
aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
Unless expressly stated in writing,
T
aiwan VBsemi products are not intended for use in medical, life saving,
or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal
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T
aiwan VBsemi such applications using client did not express their
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aiwan VBsemi people who are related to product design applications and
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Material Category Policy
Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be
oHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) – modification, unless otherwise specified as inconsistent.(www.VBsemi.com)
Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
2011/65 /.
Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as
halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products
conform to confirm compliance with IEC 61249-2-21 standard level JS709A.
