VBsemi-Elec-SM4307PSKPC-VB
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SM4307PSKPC
P-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Extended V
GS
range (± 25 V) for adaptor switch
a
V
DS
(V)
R
DS(on)
(
) Max.
0.0080 at
V
GS
= – 10 V
0.0090 at V
GS
= – 6 V
0.012
0
at V
GS
= – 4.5 V
Q
g
(Typ.)
applications
I
D
•
•
•
•
Extremely low R
DS(on)
TrenchFET
®
Power MOSFET
100 % R
g
and UIS Tested
– 60
– 53
– 50
– 30
66 nC
Typical ESD Performance: 4000 V (HBM)
DFN8(5*6)
S
S
6.15 mm
5.15 mm
1
S
2
G
S
3
G
4
D
8
D
7
D
D
6
P-Channel MOSFET
D
5
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
– 30
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
± 20
T
C
= 25 °C
– 60
T
C
= 70 °C
– 50.7
Continuous Drain Current (T
J
= 150 °C)
I
D
T
A
= 25 °C
A
= 70 °C
– 47.3
– 43.9
b, c
T
A
I
DM
I
S
Pulsed Drain Current (t = 300 µs)
– 150
– 58
b, c
– 46
b, c
– 40
80
T
C
= 25 °C
Continuous Source-Drain Diode Current
T
A
= 25 °C
I
AS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
E
AS
mJ
W
T
C
= 25 °C
T
C
= 70 °C
A
= 25 °C
T
A
= 70 °C
75
40
P
D
Maximum Power Dissipation
.
3.1
b, c
2
b, c
T
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
33
Maximum
Unit
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
R
thJA
R
thJF
t
10 s
Steady State
40
17
°C/W
15
Notes:
a. Based
on T
C
= 25 °C.
b. Surface
mounted on 1″ x 1″ FR4 board.
c. t
= 10 s.
d. Maximum
under steady state conditions is 90 °C/W.
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1
SM4307PSKPC
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
V
GS
= 0
V
,
I
D
= – 250 µA
I
D
= – 250 µA
Drain-Source Breakdown Voltage
V
DS
T
e
mperature Coefficient
– 30
V
mV/°C
V
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
– 24
6
V
GS(th)
T
e
mperature Coefficient
V
DS
= V
GS
, I
D
= – 250 µA
V
DS
= 0
V
,
V
GS
= ± 25 V
V
DS
= 0
V
,
V
GS
= ± 20 V
V
DS
= – 30
V
,
V
GS
= 0 V
V
DS
= – 30
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
– 5
V
,
V
GS
= – 10 V
V
GS
– 10
V
,
I
D
= – 13 A
V
GS
– 6
V
,
I
D
= – 10 A
Gate-Source Threshold Voltage
– 1.0
– 2.5
± 150
± 15
I
GSS
Gate-Source Leakage
µA
– 1
I
DSS
Zero Gate Voltage Drain Current
On-State Drain Current
a
– 10
I
D(on)
– 20
A
S
0.0080
0.0090
0.0120
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
– 4.5
V
,
I
D
= – 8 A
V
DS
= – 15
V
,
I
D
= – 13 A
Forward
T
r
ansconductance
a
g
fs
44
Dynamic
b
C
iss
C
oss
C
rss
Input Capacitance
4620
880
820
102
66
V
DS
= – 15
V
,
V
GS
= 0
V
, f = 1
M
Hz
Output Capacitance
pF
Reverse
T
r
ansfer Capacitance
V
DS
= – 15
V
,
V
GS
= – 10
V
,
I
D
= – 17.3 A
153
80
Q
g
T
o
tal Gate Charge
nC
Q
gs
Q
gd
R
g
Gate-Source Charge
V
DS
= – 15
V
,
V
GS
= – 5
V
,
I
D
= – 17.3 A
f = 1 MHz
16
Gate-Drain Charge
28
Gate Resistance
0.3
1.3
70
2.6
105
105
68
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-On Delay Time
Rise Time
70
V
DD
= 0
V
,
R
L
= 1.5
I
D
– 10 A, V
GEN
= – 4.5
V
,
R
g
= 1
T
u
rn-Off Delay Time
45
Fall Time
27
41
ns
T
u
rn-On Delay Time
18
30
Rise Time
15
25
V
DD
= – 15
V
,
R
L
= 1.5
I
D
– 10 A, V
GEN
= – 10
V
,
R
g
= 1
T
u
rn-Off Delay Time
52
80
Fall Time
14
25
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
– 5.8
– 60
– 1.2
53
A
I
S
= – 10 A, V
GS
= 0 V
– 0.78
35
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
25
38
I
F
= – 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
19
ns
t
b
16
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
SM4307PSKPC
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
-02
0.015
T
J
= 25
°
C
10
-03
0.012
10
-04
T
J
= 150
°
C
0.009
10
-05
10
-06
0.006
T
J
= 25
°
C
10
-07
0.003
10
-08
10
-09
0.000
0
0
0
6
12
18
24
30
0
6
12
18
24
30
36
V
GS
– Gate-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
60
45
30
15
0
10
8
V
GS
= 10 V thru 5 V
V
GS
= 4 V
6
4
T
C
= 25
°
C
2
V
GS
= 3 V
T
C
= – 55
°
C
0
0.5
1
1.5
2
0
1
2
3
4
V
GS
– Gate-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
7200
6000
4800
3600
2400
1200
0
0.014
0.011
0.008
0.005
0.002
V
GS
= 4.5 V
C
iss
V
GS
= 6 V
V
GS
= 10 V
C
oss
C
rss
0
6
12
18
24
30
15
30
45
60
V
DS
– Drain-to-Source Voltage (V)
I
D
– Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
服务热线：400-655-8788
3
SM4307PSKPC
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
1.60
1.35
1.10
0.85
0.60
I
D
= 13A
V
GS
= 10 V
I
D
= 17.3 A
8
V
DS
= 15 V
V
GS
= 6.5 V
6
V
DS
= 7.5 V
4
V
DS
= 24 V
2
0
0
30
60
90
120
– 50
– 25
0
25
50
75
100 125 150
T
J
– Junction Temperature (
°
C)
Q
g
– Total Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
0.020
0.015
0.010
0.005
0.000
100
10
1
I
D
= 13 A
T
J
= 150
°
C
T
J
= 125
°
C
T
J
= 25
°
C
T
J
= 25
°
C
0.1
0.0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
– Gate-to-Source Voltage (V)
V
SD
– Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.5
50
40
I
D
= 250 μA
2.15
1.8
30
20
10
0
1.45
1.1
– 50
– 25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
600
Time (s)
T
J
– Temperature (
°
C)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
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4
SM4307PSKPC
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
30
24
18
12
6
100 μs
1 ms
Limited by R
DS(on)
*
10
1
10 ms
100 ms
1 s
0.1
0.01
DC, 10 s
T
A
= 25
°
C
Single Pulse
BVDSS Limited
10
0.001
0
0.1
1
100
0
25
50
75
100
125
150
V
DS
– Drain-to-Source Voltage (V)
T
C
– Case Temperature (
°
C)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
Current Derating*
8.8
6.6
4.4
2.2
0
1.8
1.4
0.9
0.5
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
A
– Ambient Temperature (
°
C)
T
C
– Case Temperature (
°
C)
Power Junction-to-Ambient
Power Junction-to-Foot
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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5
SM4307PSKPC
PowerPAK SO-8,
(SINGLE/DUAL)
L
H
E2
K
E4
W
1
1
2
3
4
Z
2
3
4
D
L1
E3
A1
Backside View of Single Pad
L
H
K
E2
E4
2
E1
E
Detail Z
1
2
3
4
D1
D2
Notes
1. Inch will govern.
E3
2
Dimensions exclusive of mold gate burrs.
Backside View of Dual Pad
3.
Dimensions exclusive of mold flash and cutting burrs.
MILLIMETERS
INCHES
NOM.
0.041
DIM.
A
MIN.
0.97
0.00
0.33
0.23
5.05
4.80
3.56
1.32
NOM.
1.04
MAX.
1.12
0.05
0.51
0.33
5.26
5.00
3.91
1.68
MIN.
0.038
0.000
0.013
0.009
0.199
0.189
0.140
0.052
MAX.
0.044
0.002
0.020
0.013
0.207
0.197
0.154
0.066
A1
b
–
–
0.41
0.016
c
0.28
0.011
D
5.15
0.203
D1
D2
D3
D4
D5
E
4.90
0.193
3.76
0.148
1.50
0.059
0.57 TYP.
3.98 TYP.
6.15
0.0225 TYP.
0.157 TYP.
0.242
6.05
5.79
3.48
3.68
6.25
5.99
3.84
3.91
0.238
0.228
0.137
0.145
0.246
0.236
0.151
0.154
E1
E2
E3
E4
e
5.89
0.232
3.66
0.144
3.78
0.149
0.75 TYP.
1.27 BSC
1.27 TYP.
–
0.030 TYP.
0.050 BSC
0.050 TYP.
–
K
K1
H
0.56
0.51
0.51
0.06
0°
–
0.022
0.020
0.020
0.002
0°
–
0.61
0.71
0.71
0.20
12°
0.024
0.028
0.028
0.008
12°
L
0.61
0.024
L1
θ
0.13
0.005
–
–
W
M
0.15
0.25
0.36
0.006
0.010
0.014
0.125 TYP.
0.005 TYP.
ECN: T10-0055-Rev. J, 15-Feb-10
DWG: 5881
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6
SM4307PSKPC
Disclaimer
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data are subject to change without notice.
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T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
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any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
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aiwan VBsemi
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aiwan demand that the Taiwan VBsemi of. Statement on whether the
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Parameter data sheets and technical specifications can be provided may vary depending on the application and
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aiwan
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aiwan VBsemi products are not intended for use in medical, life saving,
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