VBsemi-Elec-TJ20S04M3L-VB
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TJ20S04M3L
P-Channel 4
0 V (D-S)
MOSFET
FEATURES
• TrenchFET
®
power MOSFET
PRODUCT SUMMARY
V
DS
(V)
-40
• Package with low thermal resistance
R
DS(on)
(
) at V
GS
= -10 V
DS(on)
(
) at V
GS
= -4.5 V
0.012
• 100 % R
g
and UIS tested
0.015
R
I
D
(A)
-50
Configuration
Single
TO-252
S
G
D
D
G
S
P-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
DS
-40
V
V
GS
20
T
C
= 25 °C
a
C
= 125 °C
-50
Continuous Drain Current
I
D
T
-39
Continuous Source Current (Diode Conduction)
a
Pulsed Drain Current
b
I
S
-50
A
I
DM
I
AS
-200
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
-40
L = 0.1 mH
T
A
= 25 °C
E
AS
80
mJ
W
3
136
Maximum Power Dissipation
b
T
C
= 25 °C
P
D
T
C
= 125 °C
45
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to +175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
R
thJA
LIMIT
50
UNIT
Junction-to-Ambient
PCB Mount
c
°C/W
Junction-to-Case (Drain)
R
thJC
1.1
Notes
a. Package
limited.
b. Pulse
test; pulse width
300 μs, duty cycle
2 %.
c. When
mounted on 1″ square PCB (FR4 material).
d. Parametric
verification ongoing.
服务热线：400-655-8788
1
TJ20S04M3L
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= -250 μA
V
DS
= V
GS
, I
D
= -250 μA
-40
–
–
V
-1.5
–
-2.5
V
DS
= 0 V, V
GS
=
20 V
–
–
–
100
nA
μA
A
V
GS
= 0 V
V
DS
= -40 V
–
–
-1
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
V
GS
= 0 V
GS
= 0 V
V
DS
= -40 V, T
J
= 125 °C
V
DS
= -40 V, T
J
= 175 °C
V
DS
-5 V
–
-50
V
–
–
-150
I
D(on)
V
GS
= -10 V
V
GS
= -10 V
-50
–
–
–
–
–
–
–
–
I
D
= -17 A
0.012
0.017
0.020
0.015
61
V
GS
= -10 V
GS
= -10 V
I
D
= -50 A, T
J
= 125 °C
I
D
= -50 A, T
J
= 175 °C
I
D
= -14 A
–
Drain-Source On-State Resistance
a
R
DS(on)
V
–
V
GS
= -4.5 V
–
Forward Transconductance
a
Dynamic
b
g
fs
V
DS
= -15 V, I
D
= -17 A
–
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
C
iss
C
oss
C
rss
Q
g
–
–
2872
508
352
60
3950
635
440
80
V
GS
= 0 V
V
DS
= -25 V, f = 1 MHz
pF
–
–
Q
gs
Q
gd
R
g
V
GS
= -10 V
V
DS
= -30 V, I
D
= -50 A
f = 1 MHz
–
5.7
14.7
3
8.6
22
nC
–
1.5
–
4.5
15
Turn-On Delay Time
c
Rise Time
c
t
d(on)
t
r
t
d(off)
t
f
10
–
12
18
V
DD
= -20 V, R
L
= 0.4
I
D
-50 A, V
GEN
= -10 V, R
g
= 1
ns
Turn-Off Delay Time
c
Fall Time
c
–
40
60
–
16
24
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
–
–
–
-200
-1.5
A
V
Forward Voltage
V
SD
I
F
= -50 A, V
GS
= 0 V
-1
Notes
a. Pulse
test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed
by design, not subject to production testing.
c. Independent
of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
TJ20S04M3L
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
100
80
60
40
20
0
100
80
60
40
20
0
V
= 10 V thru 5 V
GS
4 V
25 °C
3 V
T
= 125 °C
C
– 55 °C
4
0
2
6
8
10
0
3
6
9
12
15
V
– Gate-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
GS
Output Characteristics
Transfer Characteristics
0.05
0.04
0.03
0.02
0.01
0.00
5000
4000
3000
2000
1000
0
C
iss
V
= 4.5 V
GS
V
= 10 V
GS
C
oss
C
rss
0
20
40
60
80
100
0
5
10
15
20
25
30
35
40
V
– Drain-to-Source Voltage (V)
I
– Drain Current (A)
DS
D
On-Resistance vs. Drain Current
Capacitance
10
8
2.0
1.7
1.4
1.1
0.8
0.5
V
D
= 10 V
I
D
= 50 A
GS
= 30 A
I
V
DS
= 20 V
6
4
2
0
0
10
20
30
40
50
60
– 50
– 25
0
T
25
50
75 100
125 150 175
– Junction
T
e
mperature (°C)
Q
–
T
o
tal Gate Charge (nC)
J
g
Gate Charge
On-Resistance vs. Junction Temperature
服务热线：400-655-8788
3
TJ20S04M3L
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
100
0.10
0.08
0.06
0.04
0.02
0.00
10
T
= 150 °C
J
T
= 25 °C
1
J
0.1
T
= 150 °C
J
0.01
0.001
T
= 25 °C
J
0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
SD
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to Source Voltage
1.1
0.8
120
100
80
60
40
20
0
T
= – 55 °C
25 °C
C
I
= 250 µA
D
125 °C
0.5
I
= 5 mA
D
0.2
– 0.1
– 0.4
0
20
40
60
80
100
– 50
– 25
0
25
50
75 100
125 150 175
I
D
–
D
rain Current (A)
T
–
T
e
mperature (°C)
J
Threshold Voltage
– 40
Transconductance
– 42
– 44
– 46
– 48
– 50
I
= 10 mA
D
– 50
– 25
0
25
T
J
– Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
50
75 100
125 150 175
服务热线：400-655-8788
4
TJ20S04M3L
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
100
10
I
Limited
DM
100
µ
s
Limited by R
*
DS(on)
I
D
Limited
1 ms
10 ms
100 ms
1 s, 10 s, DC
1
0.1
0.01
T
= 25 °C
C
Single P
u
lse
B
V
DSS Limited
0.01
0.1
1
10
100
V
D
S
– Drain-to-
S
ource Voltage (V)
* V
GS
> minimum V
GS
at which R
D
S
(on)
i
s s
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
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5
TJ20S04M3L
2
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P
u
lse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
1000
S
qu
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Note
•
The characteristics shown in the two graphs
– Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
– Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board – FR4, size 1″ x 1″ x 0.062″, double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
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6
TJ20S04M3L
TO-252AA Case Outline
E
A
MILLIMETERS
INCHES
C2
b3
DIM.
A
MIN.
MAX.
2.38
0.127
0.88
1.14
5.46
0.61
0.89
6.22
–
MIN.
MAX.
2.18
–
0.086
–
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
–
A1
b
0.64
0.76
4.95
0.46
0.46
5.97
4.10
6.35
4.32
9.40
0.025
0.030
0.195
0.018
0.018
0.235
0.161
0.250
0.170
0.370
b2
b3
C
C2
D
D1
E
6.73
–
0.265
–
E1
H
b
C
b2
e
10.41
0.410
A1
e1
e
2.28 BSC
4.56 BSC
1.40
0.090 BSC
0.180 BSC
e1
L
1.78
1.27
1.02
1.52
0.055
0.070
0.050
0.040
0.060
L3
L4
L5
0.89
–
0.035
–
1.01
0.040
ECN: T13-0592-Rev. A, 02-Sep-13
DWG: 6019
E1
Note
Dimension L3 is for reference only.
•
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7
TJ20S04M3L
RECOMMENDED MINIMUM
P
A
DS FOR D
P
A
K (TO-252)
0.224
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
服务热线：400-655-8788
8
TJ20S04M3L
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T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
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any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
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aiwan VBsemi
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including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
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T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
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product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
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aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
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aiwan VBsemi products are not intended for use in medical, life saving,
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