VBsemi-Elec-TSM2301ACX-RF-VB
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TSM2301ACX RF
P-Channel 20-V (D-S) MOSFET
FEATURES
MOSFET PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
V
DS
(V)
R
DS(on)
(
)
I
D
(A)
a
–
5
e
Q
g
(Typ.)
Definition
0.035 at V
GS
= – 10 V
0.043 at V
GS
= – 4.5 V
0.061 at V
GS
= – 2.5 V
•
•
TrenchFET
®
Power MOSFET
– 5
e
– 20
10 nC
100 % R
Tested
g
– 4.8
•
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
•
•
•
Load Switch
PA Switch
DC/DC Converters
TO-236
(SOT-23)
G
S
1
2
3
D
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
– 20
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
12
– 5
e
T
C
= 25 °C
C
= 70 °C
T
– 4.8
Continuous Drain Current (T
J
= 150 °C)
I
D
– 4.5
b, c
– 3.5
b, c
– 18
T
A
= 25 °C
T
A
= 70 °C
A
I
DM
I
S
Pulsed Drain Current
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 70 °C
– 2.1
Continuous Source-Drain Diode Current
– 1.0
b, c
2.5
1.6
P
D
Maximum Power Dissipation
W
1.25
b, c
0.8
b, c
– 55 to 150
T
A
= 25 °C
T
A
= 70 °C
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
Symbol
R
thJA
Typical
75
Maximum
Unit
5 s
Steady State
100
50
°C/W
R
thJF
40
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1″ x 1″ FR4 board.
c. t
= 5 s.
d. Maximum
under steady state conditions is 166 °C/W.
e. Package
limited.
服务热线：400-655-8788
1
TSM2301ACX RF
MOSFET SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
V
DS
= 0
V
,
I
D
= – 250 µA
Drain-Source Breakdown Voltage
– 20
V
V
DS
T
e
mperature Coefficient
V
DS
/T
J
– 13.4
2.9
mV/°C
I
D
= – 250 µA
V
GS(th)
T
e
mperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
V
/T
GS(th) J
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= – 250 µA
– 0.5
– 18
– 1.5
100
– 1
V
V
DS
= 0
V
,
V
GS
=
12 V
nA
V
DS
= – 20
V
,
V
GS
= 0 V
DS
= – 20
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
– 5
V
,
V
GS
= – 4.5 V
V
GS
= – 10
V
,
I
D
= – 5.1 A
I
DSS
Zero Gate Voltage Drain Current
On-State Drain Current
a
µA
A
V
– 10
I
D(on)
0.035
0.043
0.061
15
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= – 4.5
V
,
I
D
= – 4.5 A
V
GS
= – 2.5
V
,
I
D
= – 3.7 A
V
DS
= – 5
V
,
I
D
= – 5.1 A
Forward
T
r
ansconductance
a
g
fs
S
Dynamic
b
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
835
180
155
10
V
DS
= – 10
V
,
V
GS
= 0
V
, f = 1
M
Hz
pF
V
DS
= – 10
V
,
V
GS
= – 4.5
V
,
I
D
= – 5.1 A
Q
g
T
o
tal Gate Charge
6.4
1.7
3.4
4.4
22
nC
Q
gs
Q
gd
R
g
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
T
u
rn-On Delay Time
Rise Time
V
DS
= – 10
V
,
V
GS
= – 2.5
V
,
I
D
= – 5.1 A
f = 1 MHz
0.9
8.8
33
30
42
18
t
d(on)
t
r
t
d(off)
t
f
20
V
DD
= – 10
V
,
R
L
= 2.4
ns
I
D
= – 4.1 A, V
GEN
= – 4.5
V
,
R
g
= 1
T
u
rn-Off Delay Time
Fall Time
28
9
Drain-Source Body Diode Characteristics
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
I
S
= – 4.1 A
Continuous Source-Drain Diode Current
– 2.1
– 20
– 1.2
35
A
Pulse Diode Forward Current
a
Body Diode Voltage
– 0.8
23
12
15
8
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
20
I
F
= – 4.1 A, dI/dt = 100 A/µs, T
J
= 25 °C
ns
t
b
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
TSM2301ACX RF
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
5
4
3
2
1
0
V
GS
= 5 V thru 3 V
V
GS
= 2.5 V
15
10
5
V
GS
= 2 V
T
C
= 25
°
C
T
C
= 125
°
C
V
GS
= 1.5 V
T
C
= – 55
°
C
0
0
0.5
1
1.5
2
0
0.5
1
1.5
2
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1400
1050
700
350
0
0.08
0.06
0.04
0.02
0.00
V
GS
= 2.5 V
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
rss
0
5
10
15
20
0
5
10
15
20
V
DS
– Drain-to-Source Voltage (V)
I
D
– Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
5
1.5
1.3
1.1
0.9
0.7
I
D
= 5.1 A
V
GS
= 10 V
4
V
DS
= 5 V
3
V
DS
= 10 V
2
V
DS
= 16 V
1
0
V
GS
= 4.5 V
0
3
6
9
12
– 50
– 25
0
25
50
75
100 125 150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (
°
C)
Gate Charge
On-Resistance vs. Junction Temperature
服务热线：400-655-8788
3
TSM2301ACX RF
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.08
I
D
= 5.1 A
0.06
0.04
0.02
0
10
T
J
= 150
°
C
T
J
= 25
°
C
1
T
J
= 25
°
C
T
J
= 125
°
C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.1
1.0
0.8
0.7
0.5
10
8
6
I
D
= 250 μA
4
2
T =
25 °C
A
0
0.01
– 50
– 25
0
25
50
75
100 125 150
0.1
1
10
100
1000
Time (s)
Single Pulse Power
T
J
– Temperature (
°
C)
Threshold Voltage
100
Limited by R
DS(on)
*
10
1
100 μs
1 ms
10 ms
100 ms
0.1
0.01
1 s, 10 s
DC
BVDSS Limited
10
T
C
= 25
°
C
Single Pulse
0.1
1
100
V
DS
– Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area
服务热线：400-655-8788
4
TSM2301ACX RF
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
8
6
Package Limited
4
2
0
0
25
50
75
100
125
150
T
C
– Case Temperature (
°
C)
Current Derating*
1
0.8
0.6
0.4
0.2
0
3
2.5
2
1.5
1
0.5
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
A
– Ambient Temperature (
°
C)
T
C
– Case Temperature (
°
C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
服务热线：400-655-8788
5
TSM2301ACX RF
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
N
otes:
P
DM
0.05
t
1
0.02
t
2
t
t
1
2
1. D
u
ty Cycle, D =
2. Per Unit Base = R
= 166 °C/
W
thJA
(t)
= P
Z
3. T
– T
A
DM thJA
JM
4. S
u
rface Mo
u
nted
Single P
u
lse
0.01
-4
-3
-2
-1
10
10
10
10
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P
u
lse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
服务热线：400-655-8788
6
TSM2301ACX RF
SOT-23 (TO-236): 3-LEAD
b
3
E
1
E
1
2
e
S
e
1
D
0.10 mm
0.004″
C
C
0.25 mm
q
A
2
A
G
au
ge Pl
a
ne
S
e
a
ting Pl
a
ne
S
e
a
ting Pl
a
ne
C
A
1
L
1
L
MILLIMETERS
INCHES
Dim
Min
0.89
0.01
Max
1.12
0.10
Min
0.0
3
5
0.0004
Max
0.044
0.004
A
A
1
A
2
0.88
0.
3
5
0.085
2.80
2.10
1.20
1.02
0.50
0.18
3
.04
2.64
1.40
0.0
3
46
0.014
0.00
3
0.110
0.08
3
0.047
0.040
0.020
0.007
0.120
0.104
0.055
b
c
D
E
E
1
e
0.95 BSC
1.90 BSC
0.0
3
74 Ref
e
1
0.0748 Ref
L
0.40
0.60
8°
0.016
0.024
8°
L
1
0.64 Ref
0.50 Ref
0.025 Ref
0.020 Ref
S
q
3
°
3
°
ECN: S-0
3
946-Rev. K, 09-Jul-01
DWG: 5479
服务热线：400-655-8788
7
TSM2301ACX RF
RECOMMENDED MINIMUM
P
A
DS FOR SO
T
–
23
0.037
0.022
(0.950)
(0.559)
0.053
(1.341)
0.097
(2.459)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
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8
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representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
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any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
T
aiwan VBsemi
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including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
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application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
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aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
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aiwan VBsemi products are not intended for use in medical, life saving,
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oHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
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Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
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halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
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