VBsemi-Elec-TSM4436CS-RLG-VB
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TSM4436CS RLG
N-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
I
D
(A)
d
V
DS
(V)
R
DS(on)
(
Ω
)
Q
g
(Typ.)
Definition
•
•
TrenchFET
®
Power MOSFET
Optimized for “Low Side” Synchronous
Rectifier Operation
0.025 at V
GS
= 10 V
7.6
6.5
60
10.5 nC
0.03
5
at V
GS
= 4.5 V
•
100 % R
g
and UIS Tested
APPLICATIONS
D
•
CCFL Inverter
SO-8
S
S
S
G
1
2
3
4
8
7
6
5
D
D
G
D
D
S
Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
60
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
± 20
7.6
a
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
6.8
Continuous Drain Current (T
J
= 150 °C)
I
D
6.1
b, c
4.8
b, c
25
A
I
DM
I
S
Pulsed Drain Current
T
C
= 25 °C
T
A
= 25 °C
4.2
2.1
b, c
Continuous Source-Drain Diode Current
I
AS
Avalanche Current
15
L = 0.1 mH
E
AS
Single-Pulse Avalanche Energy
11.2
5
mJ
W
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
3.2
P
D
Maximum Power Dissipation
2.5
b, c
1.6
b, c
– 55 to 150
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, d
Symbol
Typical
38
Maximum
Unit
°C/W
R
thJA
R
thJF
t
≤
10 s
Steady State
50
25
Maximum Junction-to-Foot (Drain)
20
Notes:
a. Package
limited.
b. Surface
mounted on 1″ x 1″ FR4 board.
c. t
= 10 s.
d. Maximum
under Steady State conditions is 85 °C/W.
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1
TSM4436CS RLG
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
Δ
V
DS
/T
J
Δ
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0
V
,
I
D
= 250 µA
I
D
= 250 µA
Drain-Source Breakdown Voltage
60
V
V
DS
T
e
mperature Coefficient
55
mV/°C
V
GS(th)
T
e
mperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
– 6.3
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0
V
,
V
GS
= ± 20 V
1.2
25
2.5
± 100
1
V
I
GSS
nA
V
DS
= 60
V
,
V
GS
= 0 V
I
DSS
I
D(on)
R
DS(on)
g
fs
Zero Gate Voltage Drain Current
On-State Drain Current
a
µA
A
V
DS
= 60
V
,
V
GS
= 0
V
,
T
J
= 55 °C
10
V
DS
≥
5
V
,
V
GS
= 10 V
V
GS
= 10
V
,
I
D
= 4.6 A
V
GS
= 4.5
V
,
I
D
= 4.2 A
V
DS
= 15
V
,
I
D
= 4.6 A
0.025
0.035
20
Drain-Source On-State Resistance
a
Forward
T
r
ansconductance
a
Ω
S
Dynamic
b
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
1100
90
V
DS
= 30
V
,
V
GS
= 0
V
, f = 1
M
Hz
pF
55
V
DS
= 30
V
,
V
GS
= 10
V
,
I
D
= 4.6 A
21
32
16
Q
g
T
o
tal Gate Charge
10.5
3.5
4.2
3.3
20
nC
Q
gs
Q
gd
R
g
V
DS
= 30
V
,
V
GS
= 4.5
V
,
I
D
= 4.6 A
f = 1 MHz
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
T
u
rn-On Delay Time
Rise Time
5
30
225
30
90
15
25
40
15
Ω
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 30
V
,
R
L
= 5.4
Ω
150
20
I
D
≅
5.6 A, V
GEN
= 4.5
V
,
R
g
= 1
Ω
T
u
rn-Off DelayTime
Fall Time
60
ns
T
u
rn-On Delay Time
Rise Time
10
V
DD
= 30
V
,
R
L
= 5.4
Ω
15
I
D
≅
5.6 A, V
GEN
= 10
V
,
R
g
= 1
Ω
T
u
rn-Off DelayTime
Fall Time
25
10
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward Current
a
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
I
S
= 2 A
4.2
25
A
Body Diode Voltage
0.8
25
25
19
6
1.2
50
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
ns
nC
Q
rr
t
a
50
I
F
= 5.5 A, dI/dt = 100 A/µs, T
J
= 25 °C
ns
Reverse Recovery Rise Time
t
b
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
TSM4436CS RLG
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
25
5
4
3
2
1
0
V
GS
= 10
V
thr
u
4
V
T
= – 55 °C
C
20
15
10
5
I
D
= 25 °C
I
D
= 125 °C
V
GS
= 3
V
0
0.0 0.2 0.4 0.6 0.
8
1.0 1.2 1.4 1.6 1.
8
2.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
– Drain-to-So
u
rce
V
oltage (
V
)
V
– Gate-to-So
u
rce
V
oltage (
V
)
DS
GS
Output Characteristics
Transfer Characteristics
0.040
1500
1200
900
600
300
0
C
iss
V
= 4.5
V
= 10
V
0.036
0.032
0.02
8
0.024
GS
V
GS
C
oss
C
rss
0
5
10
15
20
25
0
10
20
30
40
50
60
I
– Drain C
u
rrent (A)
V
– Drain-to-So
u
rce
V
oltage (
V
)
D
DS
Capacitance
On-Resistance vs. Drain Current
10
8
2.0
1.
8
1.6
1.4
1.2
1.0
0.
8
0.6
I
= 4.6 A
D
V
= 10
V
,
= 4.6 A
GS
I
D
V
DS
= 30
V
6
V
DS
= 4
8 V
4
2
0
0
5
10
15
20
25
– 50
– 25
0
25
50
75
100 125 150
Q
–
T
o
tal Gate Charge (nC)
T –
J
u
nction
T
e
mperat
u
re (°C)
g
J
Gate Charge
On-Resistance vs. Junction Temperature
服务热线：400-655-8788
3
TSM4436CS RLG
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
30
0.0
8
0.07
0.06
0.05
0.04
0.03
0.02
I
D
= 4.6 A
125 °C
T
J
= 150 °C
10
T
J
= 25 °C
25 °C
4
1
0.0
0.2
0.4
0.6
0.
8
1.0
1.2
0
2
6
8
10
V
– So
u
rce-to-Drain
V
oltage (
V
)
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
SD
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.6
2.4
2.2
2.0
1.
8
1.6
1.4
1.2
1.0
50
40
I
D
= 250
µ
A
30
20
10
0
-3
-2
-1
10
10
10
1
10
100
600
– 50
– 25
0
25
50
75
100 125 150
Time (s)
T
–
T
e
mperat
u
re (°C)
J
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited
b
y R
*
DS(on)
10
1
100
µ
s
1 ms
10 ms
100 ms
0.1
T
= 25 °C
A
1 s
Single P
u
lse
10 s
DC
B
V
DSS Limited
0.01
0.1
1
10
100
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
*
V
> minim
u
m
V
at
w
hich R
is specified
GS
GS
DS(on)
Safe Operating Area
服务热线：400-655-8788
4
TSM4436CS RLG
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
12
5
4
3
2
1
0
9
Package Limited
6
3
0
0
25
50
75
100
125
150
25
50
75
100
125
150
T
C
– Case
T
e
mperat
u
re (°C)
T
C
– Case
T
e
mperat
u
re (°C)
Current Derating*
Power, Junction-to-Foot
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
服务热线：400-655-8788
5
TSM4436CS RLG
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2
1
D
u
ty Cycle = 0.5
0.2
0.1
N
otes:
P
DM
0.1
0.05
t
1
t
2
t
t
1
0.02
1. D
u
ty Cycle, D =
2
2. Per Unit Base = R
= 70
C/
W
thJA
(t)
Single P
u
lse
3. T
– T
= P
Z
JM DM
thJA
A
4. S
u
rface Mo
u
nted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P
u
lse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
服务热线：400-655-8788
6
TSM4436CS RLG
S
OIC (NARROW): 8-LEAD
JEDEC P
a
rt N
u
m
b
er: M
S
-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (G
a
ge Pl
a
ne)
A
All Le
a
d
s
0.101 mm
0.004″
q
e
B
A
1
L
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A
1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
服务热线：400-655-8788
7
TSM4436CS RLG
RECOMMENDED MINIMUM
P
A
DS FOR SO-8
0.172
(4.369)
0.028
(0.711)
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
服务热线：400-655-8788
8
TSM4436CS RLG
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data are subject to change without notice.
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representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
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any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
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aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
including a particular purpose, non-infringement and merchantability guarantee.
Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
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aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
Unless expressly stated in writing,
T
aiwan VBsemi products are not intended for use in medical, life saving,
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aiwan VBsemi such applications using client did not express their
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aiwan VBsemi people who are related to product design applications and
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RoHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
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halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
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conform to confirm compliance with IEC 61249-2-21 standard level JS709A.
