VBsemi-Elec-UT2955G-VB
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UT2955G
P-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
TrenchFET
®
Power MOSFET
100 % UIS Tested
V
DS
(V)
R
DS(on)
(
Ω
)
I
D
(A)
Q
g
(Typ)
0.061 at
V
GS
= – 10 V
0.072 at V
GS
= – 4.5 V
– 30
APPLICATIONS
• Load
Switch
– 60
10
– 26
S
TO-252
G
G
D
S
Top View
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
C
Parameter
Symbol
Limit
20
Unit
V
GS
Gate-Source Voltage
V
T
C
= 25 °C
– 30
Continuous Drain Current (T
J
= 175 °C)
I
D
T
C
= 100 °C
– 25
I
DM
I
S
Pulsed Drain Current
– 50
A
Continuing Source Current (Diode Conduction)
Avalanche Current
– 20
I
AS
E
AS
– 20
Single Pulse Avalanche Energy
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
7.2
34
a
4
b
mJ
W
P
D
Maximum Power Dissipation
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
≤
10 sec
20
62
5
25
75
6
Junction-to-Ambient
b
R
thJA
Steady State
°C/W
R
thJC
Junction-to-Case
Notes:
a. See SOA curve for voltage derating.
b. Surface Mounted on 1″ x 1″ FR-4 boad.
1
UT2955G
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min
Typ
a
Max
Unit
Static
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0
V
,
I
D
= – 250 µA
V
DS
= V
GS
, I
D
= – 250 µA
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
– 60
V
– 1.0
– 2.0
– 3.0
100
– 1
V
DS
= 0
V
,
V
GS
=
20 V
nA
V
DS
= – 60
V
,
V
GS
= 0 V
DS
= – 60
V
,
V
GS
= 0
V
,
T
J
= 125 °C
DS
= – 60
V
,
V
GS
= 0
V
,
T
J
= 175 °C
V
DS
= – 5
V
,
V
GS
= – 10 V
I
DSS
V
V
Zero Gate Voltage Drain Current
On-State Drain Current
b
– 50
– 150
µA
A
I
D(on)
– 10
V
GS
= – 10
V
,
I
D
= – 5 A
0.061
0.100
0.150
0.072
8
V
GS
= – 10
V
,
I
D
= – 5 A, T
J
= 125 °C
GS
= – 10
V
,
I
D
= – 5 A, T
J
= 175 °C
GS
= – 4.5
V
,
I
D
= – 2 A
V
DS
= – 15
V
,
I
D
= – 5 A
Drain-Source On-State Resistance
b
r
DS(on)
Ω
V
V
Forward
T
r
ansconductance
b
g
fs
S
Dynamic
C
iss
C
oss
C
rss
Q
g
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
T
u
rn-On Delay Time
c
Rise Time
c
T
u
rn-Off Delay Time
c
Fall Time
c
1000
120
100
10
V
DS
= – 25
V
,
V
GS
= 0
V
,
f = 1
M
Hz
pF
Q
gs
Q
gd
R
g
V
DS
= – 30
V
,
V
GS
= – 10
V
,
I
D
= – 8.4 A
f = 1 MHz
2.1
3.2
8.0
6
nC
Ω
t
d(on)
t
r
t
d(off)
t
f
15
V
DD
= – 30
V
,
R
L
= 3.57
Ω
ns
I
D
≅
– 8.4 A, V
GEN
= – 10
V
,
R
G
= 2.5
Ω
16
8
Source-Drain Diode Ratings and Characteristics
(T
C
= 25 °C)
b
I
SM
V
SD
t
rr
Pulsed Current
Forward Voltage
b
– 50
A
I
F
= – 2 A, V
GS
= 0 V
– 0.9
50
– 1.3
V
Reverse Recovery Time
Reverse Recovery Time
ns
nC
I
F
= – 8 A, di/dt = 100 A/µs
Q
rr
80
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
UT2955G
TYPICAL CHARACTERISTICS
25 °C unless noted
20
16
12
8
30
24
1
8
12
6
T
= – 55 °C
C
V
GS
= 10 thr
u
5
V
25 °C
4
V
3
V
125 °C
4
2
V
0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
0
2
4
6
8
10
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
Output Characteristics
Transfer Characteristics
12
0.12
0.10
0.08
0.07
0.05
0.03
0.01
T
= – 55 °C
C
10
8
25 °C
125 °C
V
GS
= 4.5
V
V
GS
= 10
V
6
4
2
0
0
2
4
6
8
10
0
4
8
12
16
20
I
D
–
Drain C
u
rrent (A)
I
D
– Drain
C
u
rrent (A)
Transconductance
On-Resistance vs. Drain Current
8
00
700
600
500
400
300
200
100
0
20
16
12
8
V
D
= 30
V
DS
=
8
.4 A
I
C
iss
4
C
oss
C
rss
0
0
10
20
30
40
50
60
0
5
10
15
20
25
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
Q
–
T
o
tal
Gate Charge (nC)
g
Capacitance
Gate Charge
3
UT2955G
TYPICAL CHARACTERISTICS
25 °C unless noted
2.3
2.0
1.7
1.4
1.1
0.
8
0.5
10
1
V
D
= 10
V
GS
= 50 A
I
T =
150 °C
J
0.1
T =
25 °C
J
0.01
0.001
– 50
– 25
0
J
25
50
75 100
125 150 175
0.0
0.2
0.4
0.6
0.
8
1.0
T
– J
u
nction
T
e
mperat
u
re (°C)
V
SD
– So
u
rce-to-Drain
V
oltage (
V
)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
THERMAL RATINGS
100
10
10
10
µ
s
8
100
µ
s
*Limited
b
y r
DS(on)
1 ms
1
6
10 ms
100 ms, DC
4
0.1
T
= 25 °C
C
0.01
2
Single P
u
lse
0
0.001
0
25
50
75
100
125
150
175
0.1
1
10
100
V
– Drain-to-So
u
rce
V
oltage (
V
)
DS
T
– Case
T
e
mperat
u
re (°C)
C
*
V
GS
minim
u
m
V
at
w
hich r
is specified
GS
DS(on)
Drain Current vs. Case Temperature
Safe Operating Area
4
UT2955G
THERMAL RATINGS
2
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P
u
lse
0.01
–
−
4
– 3
– 2
– 1
10
10
10
10
1
10
100
600
Sq
u
are
W
a
v
e P
u
lse D
u
ration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P
u
lse
0.01
–
−
4
– 3
– 2
– 1
10
10
10
10
1
10
100
600
Sq
u
are
W
a
v
e P
u
lse D
u
ration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
5
UT2955G
TO-252AA CASE OUTLINE
E
A
MILLIMETERS
INCHES
MAX.
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
–
C2
b3
DIM.
A
MIN.
MAX.
2.38
0.127
0.88
1.14
5.46
0.61
0.89
6.22
–
MIN.
0.086
–
2.18
–
A1
b
0.64
0.76
4.95
0.46
0.46
5.97
5.21
6.35
4.32
9.40
0.025
0.030
0.195
0.018
0.018
0.235
0.205
0.250
0.170
0.370
b2
b3
C
C2
D
D1
E
6.73
–
0.265
–
E1
H
b
C
b2
e
10.41
0.410
A1
e1
e
2.28 BSC
4.56 BSC
1.40
0.090 BSC
0.180 BSC
e1
L
1.78
1.27
1.02
1.52
0.055
0.070
0.050
0.040
0.060
L3
L4
L5
0.89
–
0.035
–
1.14
0.045
ECN:
X12-0247
-Rev. M, 24-Dec-12
DWG: 5347
E1
Note
Dimension L3 is for reference only.
•
6
UT2955G
RECOMMENDED MINIMUM
P
A
DS FOR D
P
A
K (TO-252)
0.224
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
7
UT2955G
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a
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a
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8
