VBsemi-Elec-VBA2420
| Part # | VBsemi-Elec-VBA2420 |
Download  | VBsemi-Elec-VBA2420 |
VBA2420
P-Channel 40 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
100% R
g
and UIS Tested
V
DS
(V)
R
DS(on)
(
) Max.
0.0
176
at V
GS
= – 10 V
0.02
08
at V
GS
= – 4.5 V
I
D
(A)
Q
g
(Typ.)
–
8
d
–
7
d
–
4
0
35.4 nC
APPLICATIONS
S
•
Adaptor Switch
SO-8
•
•
•
Load Switch
Power Management
Mobile Computing
S
S
S
G
1
2
3
4
8
7
6
5
D
D
G
D
D
D
Top View
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
–
4
0
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
± 20
d
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
– 8
d
– 7
Continuous Drain Current (T
J
= 150 °C)
I
D
a, b
– 7.7
– 7.7
a, b
A
I
DM
I
S
– 32
Pulsed Drain Current (t = 300 µs)
T
C
= 25 °C
T
A
= 25 °C
– 18
d
– 3
a, b
– 20
Continuous Source-Drain Diode Current
I
AS
Avalanche Current
L = 0.1 mH
E
AS
Single-Pulse Avalanche Energy
20
mJ
W
T
C
= 25 °C
52
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
33
P
D
Maximum Power Dissipation
3.7
a, b
2.4
a, b
– 55 to 150
260
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
Soldering Recommendations (Peak
T
e
mperature)
e, f
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a, c
Symbol
Typical
26
Maximum
Unit
R
thJA
R
thJC
t
10 s
Steady State
33
°C/W
Maximum Junction-to-Case
1.9
2.4
Notes:
a. Surface mounted on 1″ x 1″ FR4 board.
b. t = 10 s.
c. Maximum under steady state conditions is 81 °C/W.
d. Package limited.
服务热线：400-655-8788
1
VBA2420
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0
V
,
I
D
= – 250 µA
I
D
= – 250 µA
Drain-Source Breakdown Voltage
–
4
0
V
V
DS
T
e
mperature Coefficient
– 23
4.6
mV/°C
V
GS(th)
T
e
mperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
= V
GS
, I
D
= – 250 µA
V
DS
= 0
V
,
V
GS
= ± 20 V
– 1
– 2.5
± 100
– 1
V
I
GSS
nA
V
DS
= –
4
0 V, V
GS
= 0 V
I
DSS
I
D(on)
R
DS(on)
g
fs
Zero Gate Voltage Drain Current
On-State Drain Current
a
µA
A
V
DS
= –
4
0 V, V
GS
= 0 V, T
J
= 55 °C
– 5
V
DS
– 10
V
,
V
GS
= – 10 V
V
GS
= – 10
V
,
I
D
= – 15 A
– 30
0.0176
0.0208
50
Drain-Source On-State Resistance
a
S
V
GS
= – 4.5
V
,
I
D
= – 10 A
Forward
T
r
ansconductance
a
Dynamic
b
V
DS
= – 10
V
,
I
D
= – 15 A
C
iss
C
oss
C
rss
Input Capacitance
3280
427
382
73
V
DS
= – 15
V
,
V
GS
= 0
V
, f = 1
M
Hz
DS
= – 15
V
,
V
GS
= – 10
V
,
I
D
= – 10 A
Output Capacitance
Reverse
T
r
ansfer Capacitance
pF
V
110
53
Q
g
T
o
tal Gate Charge
35.4
10.6
11.6
1.6
11
nC
Q
gs
Q
gd
R
g
V
DS
= – 15
V
,
V
GS
= – 4.5
V
,
I
D
= – 10 A
f = 1 MHz
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
T
u
rn-On Delay Time
Rise Time
0.4
3.2
22
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= – 15
V
,
R
L
= 1.5
I
D
– 10 A, V
GEN
= – 10
V
,
R
g
= 1
11
22
T
u
rn-Off DelayTime
Fall Time
45
90
8
16
ns
T
u
rn-On Delay Time
Rise Time
55
100
150
80
V
DD
= – 15
V
,
R
L
= 1.5
I
D
– 10 A, V
GEN
= – 4.5
V
,
R
g
= 1
82
T
u
rn-Off DelayTime
Fall Time
40
13
26
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward Current
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
– 18
– 70
– 1.2
36
A
Body Diode Voltage
I
S
= – 3 A, V
GS
= 0 V
– 0.74
18
8
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
ns
nC
Q
rr
t
a
16
I =
– 10 A, dI/dt = 100 A/µs, T
= 25 °C
F
J
7
ns
Reverse Recovery Rise Time
t
b
11
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
服务热线：400-655-8788
2
VBA2420
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
80
60
40
20
0
80
64
48
32
16
0
V
GS
= 10 V thru 4 V
T
C
= 25
°
C
V
GS
= 3 V
T
C
= 125
°
C
V
GS
= 2 V
T
C
= – 55
°
C
4.0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
1.0
2.0
3.0
5.0
V
GS
– Gate-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.0200
0.0160
0.0120
0.0080
0.0040
0.0000
6000
4800
3600
2400
1200
0
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
rss
0
16
32
48
64
80
0
4
8
12
16
20
V
DS
– Drain-to-Source Voltage (V)
I
D
– Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
D
= 10 A
I
D
= 10 A
V
GS
= 10 V
V
DS
= 10 V
6
V
DS
= 15 V
V
GS
= 4.5 V
4
V
DS
= 20 V
2
0
– 50
– 25
0
25
50
75
100
125
150
0
15
30
45
60
75
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (
°
C)
Gate Charge
On-Resistance vs. Junction Temperature
服务热线：400-655-8788
3
VBA2420
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.050
0.040
0.030
0.020
0.010
0.000
10
I
D
= 15 A
T
J
= 150
°
C
T
J
= 25 °C
1
0.1
T
J
= 125
°
C
0.01
0.001
T
J
= 25
°
C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
GS
– Gate-to-Source Voltage (V)
V
SD
– Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
100
80
60
40
20
0
1.0
0.7
I
D
= 250 μA
0.4
0.1
I
D
= 1 mA
– 0.2
– 0.5
– 50
– 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
Time (s)
T
J
– Temperature (
°
C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
I
DM
Limited
100 μs
10
1
I
D
Limited
1 ms
10 ms
Limited by R
DS(on)
*
100 ms
1 s
0.1
10 s
DC
T
A
= 25
°
C
Single Pulse
BVDSS Limited
10
0.01
0.01
0.1
1
100
V
DS
– Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area
服务热线：400-655-8788
4
VBA2420
MOSFET TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
70
56
42
Limited by Package
28
14
0
0
25
50
75
100
125
150
T
C
– Case Temperature (
°
C)
Current Derating*
65
52
39
26
13
0
2.0
1.6
1.2
0.8
0.4
0.0
0
25
50
75
100
125
150
0
25
50
– Ambient
T
e
mperature (°C)
A
75
100
125
150
T
– Case
T
e
mperature (°C)
T
C
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
服务热线：400-655-8788
5
VBA2420
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
0.02
t
1
t
2
t
1
1. Duty Cycle, D =
t
2
2. Per Unit Base = R
= 81 °C/W
thJA
Single Pulse
(t)
3. T
– T
= P
JM
Z
A
DM thJA
4. Surface Mounted
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
服务热线：400-655-8788
6
VBA2420
S
OIC (NARROW): 8-LEAD
JEDEC P
a
rt N
u
m
b
er: M
S
-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (G
a
ge Pl
a
ne)
A
All Le
a
d
s
0.101 mm
0.004″
q
e
B
A
1
L
MILLIMETERS
Max
INCHES
DIM
Min
Min
Max
A
A
1
B
C
D
E
e
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
服务热线：400-655-8788
7
VBA2420
RECOMMENDED MINIMUM
P
A
DS FOR SO-8
0.172
(4.369)
0.028
(0.711)
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
服务热线：400-655-8788
8
VBA2420
Disclaimer
All products due to improve reliability, function or design or for other reasons, product specifications and
data are subject to change without notice.
Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their
representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of
any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
T
aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
including a particular purpose, non-infringement and merchantability guarantee.
Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
T
aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
Unless expressly stated in writing,
T
aiwan VBsemi products are not intended for use in medical, life saving,
or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal
injury or death, use or sale of products used in
T
aiwan VBsemi such applications using client did not express their
own risk. Contact your authorized
T
aiwan VBsemi people who are related to product design applications and
other terms and conditions in writing.
The information provided in this document and the company’s products without a license, express or implied,
by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product
names and trademarks referred to herein are trademarks of their respective representatives will be all.
Material Category Policy
Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be
RoHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) – modification, unless otherwise specified as
inconsistent.(www.VBsemi.com)
Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
2011/65 /.
Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as
halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products
conform to confirm compliance with IEC 61249-2-21 standard level JS709A.
