VBsemi-Elec-VBA3860
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VBA3860
N-Channel 80 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
V
DS
(V)
R
DS(on)
(
)
I
D
(A)
a
Q
g
(Typ.)
Definition
0.0
62
at V
GS
= 10 V
3.5
•
•
•
TrenchFET
®
Power MOSFET
100 % R
g
and UIS Tested
Compliant to RoHS Directive 2002/95/EC
80
7.3 nC
APPLICATIONS
•
DC/DC Conversion
– Notebook System Power
D1
D2
SO-8
D1
1
2
3
4
8
7
6
5
S1
G1
S2
G2
D1
D2
D2
G1
G2
S1
S2
T
o
p
V
ie
w
Absolute Maximum Ratings
T
A
=25
°
C
u
nless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
V
DS
80
V
Gate-Source Voltage
V
GS
±30
3.5
V
A
T
A
=25
°
C
T
A
=70
°
C
Continuous Drain
Current
I
D
2.9
Pulsed Drain Current
C
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
C
I
DM
I
AR
18
16
A
mJ
E
AR
12.8
2
T
A
=25
°
C
Power Dissipation
B
T
A
=70
°
C
P
D
W
°C
1.3
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
48
Max
62.5
90
Units
°
C
/W
°
C
/W
°
C
/W
Maximum Junction-to-Ambient
A
t
≤
10s
R
θ
JA
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Steady-State
Steady-State
74
R
θ
JL
32
40
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1
VBA3860
Electrical Characteristics (T
J
=25
°
C
u
nless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
I
D
=250
µ
A, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
80
V
V
DS
=80V, V
GS
=0V
1
I
DSS
Zero Gate Voltage Drain Current
µ
A
T
J
=55
°
C
5
V
DS
=0V, V
GS
= ±30V
V
DS
=V
GS
I
D
=250
µ
A
V
GS
=10V, V
DS
=5V
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
5
nA
V
V
GS(th)
I
D(ON)
3.5
18
4.2
A
V
GS
=10V, I
D
=3.5A
62
113.0
15
R
DS(ON)
Static Drain-Source On-Resistance
m
Ω
T
J
=125
°
C
V
DS
=5V, I
D
=3.5A
I
S
=1A,V
GS
=0V
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
S
V
A
A
0.77
1
Maximum Body-Diode Continuous Current
Pulsed Body-diode Current
C
2.5
18
I
SM
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
510
28
640
40
770
52
pF
pF
pF
Ω
V
GS
=0V, V
DS
=40V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
12
20
30
V
GS
=0V, V
DS
=0V, f=1MHz
0.9
1.8
2.7
SWITCHING PARAMETERS
Q
g
(10V) Total
Gate Charge
Q
g
(4.5V) Total
Gate Charge
8
4
11
5.5
5
13
7
nC
V
GS
=10V, V
DS
=40V, I
D
=3.5A
Q
gs
Q
gd
t
D(on)
t
r
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
4
6
nC
nC
ns
ns
ns
ns
0.7
1.2
7.2
2.2
17
2
1.7
V
GS
=10V, V
DS
=40V, R
L
=8
Ω
,
R
GEN
=3
Ω
t
D(off)
t
f
t
rr
I
F
=3.5A, dI/dt=300A/
µ
s
I
F
=3.5A, dI/dt=300A/
µ
s
14
35
20
50
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
26
65
ns
Q
rr
nC
A. The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C
. The
value in any given application depends on the user’s specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150
°
C
, using
≤
10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150
°
C
. Ratings are based on low frequency and duty
cycles to keep
initialT
J
=25
°
C
.
D. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in
2
FR-4 board with
2
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VBA3860
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
16
12
8
20
16
12
8
10V
V
DS
=5V
7V
6V
125
°
C
5.5V
5V
4
4
25
°
C
0
0
3
4
5
6
7
0
1
2
3
4
5
V
GS
(Volts)
V
DS
(Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
100
90
80
70
60
50
2.2
2
V
GS
=10V
I
D
=3.5A
1.8
1.6
1.4
1.2
1
V
GS
=10V
0.8
0
25
50
75
100
125
150
175
0
4
8
12
16
20
I
D
(A)
Temperature (
°
C
)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junct
i
o
n
Temperature (Note E)
150
130
110
90
1.0E+02
1.0E+01
I
D
=3.5A
125
°
C
1.0E+00
125
°
C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25
°
C
70
25
°
C
50
0.0
0.2
0.4
0.6
0.8
1.0
1.2
4
8
12
16
20
V
SD
(Volts)
V
GS
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
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3
VBA3860
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
800
600
400
200
0
10
V
DS
=40V
I
D
=3.5A
8
C
iss
6
4
C
oss
2
C
rss
0
0
20
40
DS
(Volts)
60
80
0
2
4
6
8
10
12
Q
g
(nC)
V
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
100
T
A
=25
°
C
10
µ
s
10.0
1.0
R
DS(ON)
limited
T
A
=100
°
C
100
µ
s
1ms
10
T
A
=125
°
C
10ms
T
A
=150
°
C
0.00001
0.1
T
J(Max)
=150
°
C
T
A
=25
°
C
100m
10s
DC
1
0.0
0.000001
0.0001
0.1
1
10
100
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
1000
100
10
T
A
=25
°
C
1
0.00001
0.001
0.1
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note F)
10
1000
4
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VBA3860
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1
D=T
on
/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=90
°
C
/W
0.1
P
Single Pulse
0.01
T
on
T
0.01
0.00001
0.0001
0.001
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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5
VBA3860
S
OIC (NARROW): 8-LEAD
JEDEC P
a
rt N
u
m
b
er: M
S
-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (G
a
ge Pl
a
ne)
A
All Le
a
d
s
0.101 mm
0.004″
q
e
B
A
1
L
MILLIMETERS
Max
INCHES
DIM
Min
Min
Max
A
A
1
B
C
D
E
e
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
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6
VBA3860
RECOMMENDED MINIMUM
P
A
DS FOR SO-8
0.172
(4.369)
0.028
(0.711)
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
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7
VBA3860
Disclaimer
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data are subject to change without notice.
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representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
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any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
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aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
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Statement on certain types of applications are based on knowledge of the product is often used in a typical
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T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
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aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
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aiwan VBsemi products are not intended for use in medical, life saving,
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aiwan VBsemi such applications using client did not express their
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Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be
RoHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
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Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
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halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
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