VBsemi-Elec-VBE1606
| Part # | VBsemi-Elec-VBE1606 |
Download  | VBsemi-Elec-VBE1606 |
VBE1606
N-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
• TrenchFET
®
Power MOSFET
60
• Package with Low Thermal Resistance
R
DS(on)
(
) at V
GS
= 10 V
R
DS(on)
(
) at V
GS
= 4.5 V
0.00
50
• 100 % R
g
and UIS Tested
0.0120
I
D
(A)
97
Configuration
Single
D
TO-252
G
S
G
D
S
Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
DS
60
V
V
GS
20
T
C
= 25 °C
97
Continuous Drain Current
I
D
T
C
= 125 °C
56
Continuous Source Current (Diode Conduction)
a
Pulsed Drain Current
b
I
S
100
A
I
DM
I
AS
290
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
45
101
L = 0.1 mH
E
AS
mJ
W
T
C
= 25 °C
136
Maximum Power Dissipation
b
P
D
T
C
= 125 °C
45
Operating Junction and Storage Temperature Range
T
J
, T
stg
– 55 to + 175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
R
thJA
LIMIT
50
UNIT
Junction-to-Ambient
PCB Mount
c
°C/W
Junction-to-Case (Drain)
R
thJC
1.1
Notes
a. Package
limited.
b. Pulse
test; pulse width
300 μs, duty cycle
2 %.
c. When
mounted on 1″ square PCB (FR-4 material).
d. Parametric
verification ongoing.
服务热线:400-655-8788
1
VBE1606
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
60
2.0
–
–
–
V
4.0
V
DS
= 0 V, V
GS
V
GS
= 0 V
=
20 V
–
100
1
nA
μA
A
V
DS
= 60 V
V
DS
= 60 V, T
J
= 125 °C
V
DS
= 60 V, T
J
= 175 °C
V
DS
5 V
–
–
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 10 V
V
GS
= 10 V
–
–
50
–
–
150
I
D(on)
50
–
–
–
–
= 25 A
0.0050
I
D
V
GS
= 10 V
I
D
= 25 A, T
J
= 125 °C
I
D
= 25 A, T
J
= 175 °C
I
D
= 20 A
–
–
–
–
0.0117
0.0149
0.0120
177
–
–
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V
V
GS
= 4.5 V
–
Forward Transconductance
b
Dynamic
b
g
fs
V
DS
= 15 V, I
D
= 25 A
–
S
Input Capacitance
Output Capacitance
Reverse
T
ransfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
–
–
–
–
–
–
1
–
–
–
–
4844
441
200
82
6060
555
250
125
–
V
GS
= 0 V
V
DS
= 25 V, f = 1 MHz
pF
Q
gs
Q
gd
R
g
V
GS
= 10 V
V
DS
= 30 V, I
D
= 50 A
f = 1 MHz
14.5
13.5
2
nC
–
3
t
d(on)
t
r
t
d(off)
t
f
14
21
8
5
V
DD
= 30 V, R
L
= 0.6
ns
I
D
50 A, V
GEN
= 10 V, R
g
= 1
41
62
11
7
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
–
–
–
290
1.5
A
V
Forward Voltage
V
SD
I
F
= 50 A, V
GS
= 0 V
0.9
Notes
a. Pulse
test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed
by design, not subject to production testing.
c. Independent
of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线:400-655-8788
2
VBE1606
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
120
96
72
48
24
0
160
128
96
64
32
0
V
GS
= 10 V thru 5 V
T
C
= 25
°
C
V
GS
= 4 V
T
C
= 125
°
C
T
C
= – 55
°
C
0
2
4
6
8
10
0
2
4
6
8
10
V
GS
–
G
ate-to-
S
ource Voltage (V)
V
D
S
– Drain-to-
S
ource Voltage (V)
Transfer Characteristics
Output Characteristics
350
280
210
140
70
0.015
T
C
= – 55
°
C
V
GS
= 4.5 V
0.0012
0.009
0.006
0.003
0.000
T
C
= 25
°
C
T
C
= 125
°
C
V
GS
= 10 V
0
0
10
20
30
40
50
0
20
40
60
80
100
I
D
– Drain Current (A)
I
D
– Drain Current (A)
On-Resistance vs. Drain Current
Transconductance
8000
6400
4800
3200
1600
0
10
8
I
D
= 50 A
V
D
S
= 30 V
C
i
ss
6
4
C
r
ss
2
C
o
ss
0
0
12
24
36
48
60
0
20
40
60
80
100
V
D
S
– Drain-to-
S
ource Voltage (V)
Q
g
– Total
G
ate Charge (nC)
Gate Charge
Capacitance
服务热线:400-655-8788
3
VBE1606
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
2.5
2.1
1.7
1.3
0.9
0.5
80
76
72
68
64
60
V
GS
= 10 V
I
D
= 25 A
I
D
= 1 mA
V
GS
= 4.5 V
– 50
– 25
0
25
50
75 100
125 150 175
– 50
– 25
0
25
50
75 100
125 150 175
T
J
– Junction Temperature (
°
C)
T
J
– Junction Temperature (
°
C)
On-Resistance vs. Junction Temperature
Drain Source Breakdown vs. Junction Temperature
100
10
0.05
0.04
0.03
0.02
0.01
0.00
T
J
= 150
°
C
1
0.1
T
J
= 25
°
C
T
J
= 150
°
C
0.01
0.001
T
J
= 25
°
C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
S
D
–
S
ource-to-Drain Voltage (V)
V
GS
–
G
ate-to-
S
ource Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
0.1
– 0.3
– 0.7
– 1.1
I
D
= 5 mA
I
D
= 250 μA
– 1.5
– 50
– 25
0
25
50
75 100
125 150 175
T
J
– Temperature (
°
C)
Threshold Voltage
服务热线:400-655-8788
4
VBE1606
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
1000
100
100 μ
s
I
DM
Limited
1 m
s
10
10 m
s
100 m
s
1
s
, 10
s
, DC
Limited by R
D
S
(on)
*
1
0.1
BVD
SS
Limited
T
C
= 25
°
C
S
ingle Pul
s
e
0.01
0.01
0.1
1
10
100
V
D
S
– Drain-to-
S
ource Voltage (V)
* V
GS
> minimum V
GS
at which R
D
S
(on)
i
s s
pecified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
服务热线:400-655-8788
5
VBE1606
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
•
The characteristics shown in the two graphs
– Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
– Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board – FR4, size 1″ x 1″ x 0.062″, double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
服务热线:400-655-8788
6
VBE1606
TO-252AA CASE OUTLINE
E
A
MILLIMETERS
INCHES
C2
b3
DIM.
A
MIN.
MAX.
2.38
0.127
0.88
1.14
5.46
0.61
0.89
6.22
–
MIN.
MAX.
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
–
2.18
–
0.086
–
A1
b
0.64
0.76
4.95
0.46
0.46
5.97
5.21
6.35
4.32
9.40
0.025
0.030
0.195
0.018
0.018
0.235
0.205
0.250
0.170
0.370
b2
b3
C
C2
D
D1
E
6.73
–
0.265
–
E1
H
b
C
b2
e
10.41
0.410
A1
e1
e
2.28 BSC
4.56 BSC
1.40
0.090 BSC
0.180 BSC
e1
L
1.78
1.27
1.02
1.52
0.055
0.070
0.050
0.040
0.060
L3
L4
L5
0.89
–
0.035
–
1.14
0.045
ECN:
X12-0247
-Rev. M, 24-Dec-12
DWG: 5347
E1
Note
Dimension L3 is for reference only.
•
服务热线:400-655-8788
7
VBE1606
Disclaimer
All products due to improve reliability, function or design or for other reasons, product specifications and
data are subject to change without notice.
Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their
representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
product.(www.VBsemi.com)
Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of
any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
T
aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
including a particular purpose, non-infringement and merchantability guarantee.
Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
T
aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
Unless expressly stated in writing,
T
aiwan VBsemi products are not intended for use in medical, life saving,
or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal
injury or death, use or sale of products used in
T
aiwan VBsemi such applications using client did not express their
own risk. Contact your authorized
T
aiwan VBsemi people who are related to product design applications and
other terms and conditions in writing.
The information provided in this document and the company’s products without a license, express or implied,
by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product
names and trademarks referred to herein are trademarks of their respective representatives will be all.
Material Category Policy
Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be
oHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) – modification, unless otherwise specified as inconsistent.(www.VBsemi.com)
Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
2011/65 /.
Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as
halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products
conform to confirm compliance with IEC 61249-2-21 standard level JS709A.
