VBsemi-Elec-VBE2338
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VBE2338
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
•
Halogen-free
T
r
enchFET
®
Power MOSFET
V
DS
(V)
R
DS(on)
(
Ω
)
Q
g
(Typ.)
I
D
(A)
d
100 % R
g
T
e
sted
0.033 at V
GS
= – 10 V
0.046 at V
GS
= – 4.5 V
–
38
– 2
5
RoHS
– 30
19 nC
COMPLIANT
100 % UIS
T
e
sted
APPLICATIONS
•
Load Switch
•
Notebook Adaptor Switch
S
TO-252
G
G
D
S
D
Top View
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
– 30
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
± 2
0
T
C
= 25 °C
–
38
T
C
= 70 °C
T
A
= 25 °C
– 2
5
Continuous Drain Current (T
J
= 150 °C)
I
D
– 1
4
.9
a, b
–
13
.6
a, b
T
A
= 70 °C
A
I
DM
I
S
– 112
Pulsed Drain Current
– 4.1
– 2.2
a, b
– 20
T
C
= 25 °C
T
A
= 25 °C
Continuous Source-Drain Diode Current
I
AS
Avalanche Current
L = 0.1 mH
E
AS
Single-Pulse Avalanche Energy
20
mJ
W
T
C
= 25 °C
25
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
20
P
D
Maximum Power Dissipation
2.7
a, b
1.7
a, b
– 55 to 150
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a, c
Symbol
Typical
38
Maximum
Unit
R
thJA
R
thJF
t
≤
10 s
Steady State
46
25
°C/W
Maximum Junction-to-Foot
20
Notes:
a. Surface
mounted on 1″ x 1″ FR4 board.
b. t
= 10 s.
c. Maximum
under Steady State conditions is 85 °C/W.
d. Based
on T
C
= 25 °C.
服务热线：400-655-8788
1
VBE2338
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
Δ
V
DS
/T
J
Δ
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0
V
,
I
D
= – 250 µA
I
D
= – 250 µA
Drain-Source Breakdown Voltage
DS
T
e
mperature Coefficient
– 30
V
V
– 34
5.3
mV/
°C
V
GS(th)
T
e
mperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
= V
GS
, I
D
= – 250 µA
V
DS
= 0
V
,
V
GS
= ± 25 V
– 1.0
– 30
– 2.5
± 100
– 1
V
I
GSS
nA
V
DS
= – 30
V
,
V
GS
= 0 V
I
DSS
I
D(on)
R
DS(on)
g
fs
Zero Gate Voltage Drain Current
On-State Drain Current
a
µA
A
V
DS
= – 30
V
,
V
GS
= 0
V
,
T
J
= 55 °C
– 5
V
DS
≥
– 10
V
,
V
GS
= – 10 V
V
GS
= – 10
V
,
I
D
= – 10 A
V
GS
= – 4.5
V
,
I
D
= – 8 A
V
DS
= – 10
V
,
I
D
= – 10 A
0.033
0.046
28
Drain-Source On-State Resistance
a
Forward
T
r
ansconductance
a
Ω
S
Dynamic
b
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
1350
255
190
27
19
6
V
DS
= – 15
V
,
V
GS
= 0
V
, f = 1
M
Hz
pF
V
DS
= – 15
V
,
V
GS
= – 10
V
,
I
D
= – 10 A
V
DS
= – 15
V
,
V
GS
= – 4.5
V
,
I
D
= – 10 A
f = 1 MHz
43
25
Q
g
T
o
tal Gate Charge
nC
Q
gs
Q
gd
R
g
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
T
u
rn-On Delay Time
Rise Time
12
2.2
13
12
40
9
0.5
4.4
25
24
70
18
80
160
60
35
Ω
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= – 15
V
,
R
L
= 1.5
Ω
I
D
≅
– 10 A, V
GEN
= – 10
V
,
R
g
= 1
Ω
T
u
rn-Off DelayTime
Fall Time
ns
T
u
rn-On Delay Time
Rise Time
48
92
34
19
V
DD
= – 15
V
,
R
L
= 1.5
Ω
I
D
≅
– 10 A, V
GEN
= – 4.5
V
,
R
g
= 1
Ω
T
u
rn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward Current
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
– 4.1
A
–
4
0
– 1.2
45
Body Diode Voltage
I
S
= – 3 A, V
GS
= 0 V
– 0.75
27
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
ns
nC
Q
rr
t
a
16
27
I
F
= – 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
12
ns
Reverse Recovery Rise Time
t
b
15
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
VBE2338
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
60
4
8
36
24
12
0
10
8
V
GS
= 10 thr
u
4
V
6
T
= 125 °C
C
4
T
= 25 °C
C
2
T
= – 55 °C
C
V
GS
= 3
V
= 2
V
V
GS
0
0.0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
5
V
– Drain-to-So
u
rce
V
oltage (
V
)
V
– Gate-to-So
u
rce
V
oltage (
V
)
DS
GS
Output Characteristics
Transfer Characteristics
0.
12
2000
1600
1200
C
iss
0.
10
0.0
8
0.0
6
0.0
4
0.0
2
V
= 4.5
V
GS
80
0
C
oss
400
0
C
rss
V
= 10
V
GS
0
10
20
30
40
50
60
0
5
10
15
20
25
I
– Drain C
u
rrent (A)
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
D
On-Resistance vs. Drain Current
Capacitance
10
1.6
1.4
1.2
1.0
0.
8
0.6
V
GS
= – 4.5
V
V
= 10
V
DS
I
= 10 A
D
I =
– 10 A
D
8
6
4
2
0
V
= 15
V
DS
V
GS
= – 10
V
V
DS
= 20
V
0
12
24
36
4
8
60
– 50
– 25
0
25
50
75
100 125 150
T
J
– J
u
nction
T
e
mperat
u
re (°C)
Q
g
– Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
Gate Charge
服务热线：400-655-8788
3
VBE2338
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.10
0.0
8
0.06
0.04
0.02
0.00
100
I
= 10 A
D
T
= 150 °C
J
10
1
T
= 25 °C
J
0.1
0.01
T
J
= 125 °C
T
= 25 °C
J
0.001
0.0
0.2
0.4
0.6
0.
8
1.0
1.2
0
2
4
6
8
10
V
SD
– So
u
rce-to-Drain
V
oltage (
V
)
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.
8
0.6
170
136
102
6
8
I
= 250
µ
A
D
0.4
I
= 5 mA
D
0.2
0.0
34
– 0.2
– 0.4
0
– 50
– 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
J
– Temperat
u
re (°C)
Time (s)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited
b
y R
*
DS(on)
10
1
1 ms
10 ms
100 ms
1 s
0.1
10 s
DC
T
= 25 °C
A
B
V
DSS
Single P
u
lse
0.01
0.01
0.1
1
10
100
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
*
V
> minim
u
m
V
at
w
hich R
is specified
DS(on)
GS
GS
Safe Operating Area
服务热线：400-655-8788
4
VBE2338
MOSFET TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
17.0
13.6
10.2
6.
8
3.4
0.0
0
25
50
75
100
125
150
T
C
– Case
T
e
mperat
u
re (°C)
Current Derating*
6.0
4.
8
3.6
2.4
1.2
0.0
2.0
1.6
1.2
0.
8
0.4
0.0
0
25
50
75
100
125
150
0
25
50
T –
Am
b
ient
T
e
mperat
u
re (°C)
A
75
100
125
150
T
– Case
T
e
mperat
u
re (°C)
C
Power, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
服务热线：400-655-8788
5
VBE2338
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
N
otes:
P
DM
0.05
t
1
t
2
t
t
1
2
0.02
1. D
u
ty Cycle, D =
2. Per Unit Base = R
=
8
5 °C/
W
thJA
(t)
3. T
–
– T
= P
Z
JM
A
DM thJA
Single P
u
lse
4. S
u
rface Mo
u
nted
0.01
-4
-3
-2
-1
10
10
10
10
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P
u
lse
10
0.01
-4
-3
-2
-1
10
10
10
1
10
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
服务热线：400-655-8788
6
VBE2338
TO-252AA CASE OUTLINE
E
A
MILLIMETERS
INCHES
C2
b3
DIM.
A
MIN.
MAX.
2.38
0.127
0.88
1.14
5.46
0.61
0.89
6.22
–
MIN.
MAX.
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
–
2.18
–
0.086
–
A1
b
0.64
0.76
4.95
0.46
0.46
5.97
5.21
6.35
4.32
9.40
0.025
0.030
0.195
0.018
0.018
0.235
0.205
0.250
0.170
0.370
b2
b3
C
C2
D
D1
E
6.73
–
0.265
–
E1
H
b
C
b2
e
10.41
0.410
A1
e1
e
2.28 BSC
4.56 BSC
1.40
0.090 BSC
0.180 BSC
e1
L
1.78
1.27
1.02
1.52
0.055
0.070
0.050
0.040
0.060
L3
L4
L5
0.89
–
0.035
–
1.14
0.045
ECN:
X12-0247
-Rev. M, 24-Dec-12
DWG: 5347
E1
Note
Dimension L3 is for reference only.
•
服务热线：400-655-8788
7
VBE2338
RECOMMENDED MINIMUM
P
A
DS FOR D
P
A
K (TO-252)
0.224
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
服务热线：400-655-8788
8
VBE2338
Disclaimer
All products due to improve reliability, function or design or for other reasons, product specifications and
data are subject to change without notice.
Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their
representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of
any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
T
aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
including a particular purpose, non-infringement and merchantability guarantee.
Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
T
aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
Unless expressly stated in writing,
T
aiwan VBsemi products are not intended for use in medical, life saving,
or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal
injury or death, use or sale of products used in
T
aiwan VBsemi such applications using client did not express their
own risk. Contact your authorized
T
aiwan VBsemi people who are related to product design applications and
other terms and conditions in writing.
The information provided in this document and the company’s products without a license, express or implied,
by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product
names and trademarks referred to herein are trademarks of their respective representatives will be all.
Material Category Policy
Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be
RoHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) – modification, unless otherwise specified as
inconsistent.(www.VBsemi.com)
Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
2011/65 /.
Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as
halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products
conform to confirm compliance with IEC 61249-2-21 standard level JS709A.
