VBsemi-Elec-VBK8238
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001
VBK8238
P-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
V
DS
(V)
R
DS(on)
(
)
I
D
(A)
a
– 4
Q
g
(Typ.)
Definition
TrenchFET
®
Power MOSFET
0.0
34
at
V
GS
= – 4.5 V
0.0
45
at V
GS
= – 2.5 V
0.
067
at V
GS
= – 1.8 V
•
– 20
– 4
12.5 nC
•
•
100 % R
Tested
g
Compliant to RoHS Directive 2002/95/EC
– 4
APPLICATIONS
•
Load Switch for Portable Devices
– Cellular Phone
– DSC
SOT-363
SC-70 (6-LEADS)
– Portable Game Console
– MP3
– GPS
D
D
G
1
2
3
6
5
D
D
S
4
Top
V
ie
w
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
– 20
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
12
– 4
a
T
C
= 25 °C
C
= 70 °C
T
– 4
Continuous Drain Current (T
J
= 150 °C)
I
D
– 4
a, b, c
– 4
a, b, c
– 25
T
A
= 25 °C
T
A
= 70 °C
A
Pulsed Drain Current (t = 300 µs)
I
DM
I
S
– 2.3
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
Continuous Source-Drain Diode Current
– 1.3
b, c
2.8
T
C
= 70 °C
1.8
Maximum Power Dissipation
P
D
W
1.6
b, c
1.0
b, c
– 55 to 150
260
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage
T
e
mperature Range
Soldering Recommendations (Peak
T
e
mperature)
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, d
Symbol
R
thJA
Typical
Maximum
Unit
t
5 s
60
34
80
45
°C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
Notes:
a. Package limited.
b. Surface mounted on 1″ x 1″ FR4 board.
c. t
= 5 s.
d. Maximum under steady state conditions is 125 °C/W.
服务热线：400-655-8788
1
VBK8238
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0
V
,
I
D
= – 250 µA
I
D
= – 250 µA
– 20
V
mV/°C
V
V
DS
T
e
mperature Coefficient
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
– 11
2.6
V
GS(th)
T
e
mperature Coefficient
Gate-Source Threshold Voltage
V
DS
= V
GS
, I
D
= – 250 µA
– 0.4
– 1
8
V
DS
= 0
V
,
V
GS
DS
= 0
V
,
V
GS
=
=
10 V
Gate-Source Leakage
I
GSS
V
4.5 V
1
µA
V
DS
= – 20
V
,
V
GS
= 0 V
DS
= – 20
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
– 5
V
,
V
GS
= – 10 V
V
GS
= – 4.5
V
,
I
D
= – 5 A
– 1
– 10
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
V
I
D(on)
– 15
A
S
0.034
0.045
0.067
16
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= – 2.5
V
,
I
D
= – 4.4 A
V
GS
= – 1.8
V
,
I
D
= – 1 A
Forward
T
r
ansconductance
a
Dynamic
b
g
fs
V
DS
= – 10
V
,
I
D
= – 5 A
T
o
tal Gate Charge
V
DS
= – 10
V
,
V
GS
= – 8
V
,
I
D
= – 5 A
22
12.5
1.8
33
19
Q
g
Gate-Source Charge
nC
Q
gs
Q
gd
R
g
V
DS
= – 10
V
,
V
GS
= – 4.5
V
,
I
D
= – 5 A
f = 1 MHz
Gate-Drain Charge
Gate Resistance
T
u
rn-On Delay Time
Rise Time
3.3
0.08
0.43
150
300
1620
560
50
0.86
225
k
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
450
V
DD
= – 10
V
,
R
L
= 1.4
I
D
– 4 A, V
GEN
= – 4.5
V
,
R
g
= 1
T
u
rn-Off Delay Time
Fall Time
2430
840
ns
T
u
rn-On Delay Time
Rise Time
100
90
180
V
DD
= – 10
V
,
R
L
= 1.4
I
D
– 4 A, V
GEN
= – 10
V
,
R
g
= 1
T
u
rn-Off Delay Time
Fall Time
2500
600
3750
900
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
– 2.3
– 25
– 1.2
36
A
Body Diode Voltage
I
S
= – 4 A, V
GS
= 0 V
– 0.85
18
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
ns
nC
Q
rr
t
a
8
16
I
F
= – 4 A, dI/dt = 100 A/µs, T
J
= 25 °C
18
ns
Reverse Recovery Rise Time
t
b
10
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
VBK8238
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
-4
10
-5
10
-6
10
-7
0.1
0.08
0.06
0.04
0.02
0
T
J
= 150 °C
T
J
= 25 °C
10
-8
10
-9
10
-10
0
3
6
9
12
15
0
3
6
V
GS
– Gate-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
9
12
15
V
GS
– Gate-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
25
5
4
3
2
1
0
V
= 5 V thru 3 V
GS
V
= 2.5 V
GS
20
15
10
5
V
= 2 V
GS
GS
T
= 25 °C
C
T
= 125 °C
C
V
= 1.5 V
T
= – 55 °C
1.5
C
0
0
0.5
1.0
1.5
2.0
2.5
0
0.5
1.0
2.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.10
0.08
0.06
0.04
0.02
0
8
6
4
2
0
V
= 1.8 V
GS
I
= 5 A
D
V
= 2.5 V
GS
V
= 5 V
DS
V
= 10 V
DS
V
= 4.5 V
GS
V
= 16 V
DS
0
5
10
15
20
25
0
5
10
15
20
25
Q
g
– Total Gate Charge (nC)
I
D
– Drain Current (A)
On-Resistance vs. Drain Current
Gate Charge
服务热线：400-655-8788
3
VBK8238
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1.5
1.3
1.1
0.9
0.7
100
10
1
V
= – 4.5 V; I
= – 5 A
D
GS
T
= 150 °C
J
V
= – 2.5 V;
GS
= – 4.4 A
I
D
T
= 25 °C
J
0.1
– 50
– 25
0
25
50
75
100 125 150
0
0.5
1.0
V
SD
– Source-to-Drain Voltage (V)
T
J
– Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
0.10
0.08
0.06
0.04
0.02
0.90
0.75
0.60
0.45
0.30
I
= – 5 A
D
I
= – 250 μA
D
T
= 125 °C
J
T
= 25 °C
J
1
2
3
4
5
– 50
– 25
0
25
50
75
100 125 150
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
T
J
– Temperature (°C)
Single Pulse Power, Junction-to-Ambient
100
10
1
30
24
18
12
6
Limited by R
*
DS(on)
100 μs
1 ms
10 ms
100 ms
1 s, 10 s
DC
0.1
T
A
= 25 °C
Single Pulse
BVDSS Limited
10
0
0.01
0.1
1
100
0.001
0.01
0.1
1
10
V
DS
– Drain-to-Source Voltage (V)
Time (s)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Threshold Voltage
Safe Operating Area, Junction-to-Ambient
服务热线：400-655-8788
4
VBK8238
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
8
6
Package Limited
4
2
0
0
25
50
75
100
125
150
T
C
– Case Temperature (°C)
Current Derating*
4
3
2
1
0
1.2
0.9
0.6
0.3
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
– Case Temperature (°C)
Power Derating, Junction-to-Foot
T
A
– Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
服务热线：400-655-8788
5
VBK8238
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
Notes:
P
DM
0.1
0.1
0.05
t
1
t
2
0.02
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 125 °C/W
(t)
3. T
JM
– T
A
= P
DM
Z
thJA
Single Pulse
0.01
4. Surface Mounted
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
1000
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
服务热线：400-655-8788
6
VBK8238
SCĆ70: 6ĆLEADS
MILLIMETERS
INCHES
Dim Min
Nom Max Min Nom
Max
6
1
5
2
4
3
0.90
–
1.10
0.10
1.00
0.30
0.25
2.20
2.40
1.35
0.035
–
0.043
0.004
0.039
0.012
0.010
0.087
0.094
0.053
A
E
E
1
–
–
–
–
A
1
0.80
–
0.031
0.006
0.004
0.071
0.071
0.045
–
A
2
0.15
–
–
b
-B-
0.10
–
–
c
e
b
1.80
2.00
2.10
1.25
0.65BSC
1.30
0.20
7
_
Nom
0.079
0.083
0.049
0.026BSC
0.051
0.008
7
_
Nom
D
e
1
1.80
E
-A-
D
1.15
E
1
c
e
1.20
1.40
0.30
0.047
0.004
0.055
0.012
A
e
1
A
2
1
0.10
L
L
A
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5550
服务热线：400-655-8788
7
VBK8238
RECOMMENDED MINIMUM
P
A
DS FOR SC-70: 6-Lead
0.067
(1.702)
0.016
0.026
0.010
(0.406)
(0.648)
(0.241)
Recommended Minimum Pads
Dimensions in Inches/(mm)
服务热线：400-655-8788
8
VBK8238
Disclaimer
All products due to improve reliability, function or design or for other reasons, product specifications and
data are subject to change without notice.
Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their
representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
product.(www.VBsemi.com)
Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of
any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
T
aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
including a particular purpose, non-infringement and merchantability guarantee.
Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
T
aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
Unless expressly stated in writing,
T
aiwan VBsemi products are not intended for use in medical, life saving,
or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal
injury or death, use or sale of products used in
T
aiwan VBsemi such applications using client did not express their
own risk. Contact your authorized
T
aiwan VBsemi people who are related to product design applications and
other terms and conditions in writing.
The information provided in this document and the company’s products without a license, express or implied,
by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product
names and trademarks referred to herein are trademarks of their respective representatives will be all.
Material Category Policy
Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be
oHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) – modification, unless otherwise specified as inconsistent.(www.VBsemi.com)
Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
2011/65 /.
Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as
halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products
conform to confirm compliance with IEC 61249-2-21 standard level JS709A.
