VBsemi-Elec-VBL2157N
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VBL2157N
P-Channel 150 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• Package with Low Thermal Resistance
• 100 % R
g
and UIS Tested
– 150
0.065
0.070
– 40
R
DS(on)
(
) at V
GS
= – 10 V
DS(on)
(
) at V
GS
= – 4.5 V
R
I
D
(A)
Configuration
Single
• Compliant to RoHS Directive 2002/95/EC
S
D
2
PAK
(TO-263)
G
G
D
S
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
– 150
20
UNIT
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
T
C
= 25 °C
– 40
– 25
– 25
I
D
Continuous Drain Current
T
C
= 125 °C
Continuous Source Current (Diode Conduction)
a
Pulsed Drain Current
b
I
S
A
I
DM
I
AS
– 55
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
– 22
L = 0.1 mH
E
AS
103
mJ
W
T
C
= 25 °C
75
37
Maximum Power Dissipation
b
P
D
T
C
= 125 °C
T
J
, T
stg
Operating Junction and Storage Temperature Range
– 55 to + 175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
R
thJA
LIMIT
50
UNIT
PCB Mount
c
Junction-to-Ambient
°C/W
R
thJC
Junction-to-Case (Drain)
1.1
Notes
a. Package
limited.
b. Pulse
test; pulse width
300 μs, duty cycle
2 %.
c. When
mounted on 1″ square PCB (FR-4 material).
d. Parametric
verification ongoing.
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1
VBL2157N
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
V
DS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= – 250 μA
V
DS
= V
GS
, I
D
= – 250 μA
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
– 150
–
–
V
– 1.0
–
-3.5
V
DS
= 0 V, V
GS
=
20 V
–
–
100
– 1
nA
μA
A
V
GS
= 0 V
V
GS
= 0 V
V
DS
= – 100 V
V
DS
= – 100 V, T
J
= 125 °C
V
DS
= – 100 V, T
J
= 175 °C
V
DS
– 5 V
–
–
I
DSS
Zero Gate Voltage Drain Current
On-State Drain Current
a
–
–
–
– 50
– 250
–
V
GS
= 0 V
–
–
I
D(on)
V
GS
= – 10 V
V
GS
= – 10 V
– 30
–
I
D
= – 9 A
0.065
–
V
GS
= – 10 V
V
GS
= – 10 V
GS
= – 4.5 V
I
D
= – 9 A, T
J
= 125 °C
I
D
= – 9 A, T
J
= 175 °C
I
D
= – 7.7 A
–
0.088
–
–
0.113
–
Drain-Source On-State Resistance
a
R
DS(on)
–
–
V
0.07
Forward Transconductance
b
Dynamic
b
g
fs
V
DS
= – 15 V, I
D
= – 9.2 A
–
35
–
S
C
iss
C
oss
C
rss
Q
g
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
–
–
5000
301
208
96
–
380
260
144
–
V
GS
= 0 V
V
DS
= – 25 V, f = 1 MHz
pF
–
–
Q
gs
Q
gd
R
g
V
GS
= – 10 V
V
DS
= – 50V, I
D
= – 9.2 A
f = 1 MHz
–
8.4
23.5
3.13
11
nC
–
–
1.5
–
4.7
17
17
117
23
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
t
d(on)
t
r
t
d(off)
t
f
–
11
V
DD
= – 50 V, R
L
= 6.49
I
D
– 7.7 A, V
GEN
= – 10 V, R
g
= 1.0
ns
–
78
–
15
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
–
–
–
– 50
A
V
SD
I
F
= – 7.7 A, V
GS
= 0 V
Forward Voltage
– 0.8
– 1.5
V
Notes
a. Pulse
test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed
by design, not subject to production testing.
c. Independent
of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
VBL2157N
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
50
40
30
20
10
0
50
40
30
20
10
0
V
GS
= 10 V thru 4 V
T
C
= 25
°
C
V
GS
= 3 V
T
C
= 125
°
C
T
C
= – 55
°
C
0
1
2
3
4
5
0
2
4
6
8
10
V
GS
–
G
ate-to-
S
ource Voltage (V)
V
D
S
– Drain-to-
S
ource Voltage (V)
Output Characteristics
Transfer Characteristics
10
8
100
80
60
40
20
0
T
C
= – 55
°
C
T
C
= 25
°
C
6
T
C
= 25
°
C
T
C
= 125
°
C
4
2
T
C
= 125
°
C
T
C
= – 55
°
C
0
0
10
20
30
40
50
0
1
2
3
4
5
I
D
– Drain Current (A)
V
GS
–
G
ate-to-
S
ource Voltage (V)
Transfer Characteristics
Transconductance
0.10
0.08
0.06
0.04
0.02
0.00
7000
6000
5000
4000
3000
2000
1000
0
C
i
ss
V
GS
= 4.5 V
V
GS
= 10 V
C
r
ss
C
o
ss
0
8
16
24
32
40
0
20
40
60
80
100
V
D
S
– Drain-to-
S
ource Voltage (V)
I
D
– Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
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3
VBL2157N
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
2.5
2.0
1.5
1.0
0.5
10
8
I
D
= 9.2 A
I
D
= 9.2 A
V
D
S
= 50 V
V
GS
= 10 V
6
V
GS
= 4.5 V
4
2
0
– 50
– 25
0
25
50
75 100
125 150 175
0
10 20 30 40 50 60 70 80 90
100
T
J
– Junction Temperature (
°
C)
Q
g
– Total
G
ate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
100
10
0.25
0.20
0.15
0.10
0.05
0.00
T
J
= 150
°
C
1
0.1
T
J
= 25
°
C
T
J
= 150
°
C
0.01
T
J
= 25
°
C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
S
D
–
S
ource-to-Drain Voltage (V)
V
GS
–
G
ate-to-
S
ource Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.1
105
110
115
120
125
130
135
–
–
–
–
–
–
–
I
D
= 10 mA
0.8
0.5
I
D
= 250 μA
I
D
= 5 mA
0.2
– 0.1
– 0.4
– 50
– 25
0
25
50
75 100
125 150 175
– 50
– 25
0
25
50
75 100
125 150 175
T
J
– Junction Temperature (
°
C)
T
J
– Temperature (
°
C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
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4
VBL2157N
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
1000
I
DM
Limited
100
10
100 μ
s
1 m
s
10 m
s
100 m
s
1
s
,10
s
, DC
1
Limited by R
D
S
(on)
*
T
C
= 25
°
C
S
ingle Pul
s
e
0.1
BVD
SS
Limited
0.01
0.01
0.1
1
10
100
V
D
S
– Drain-to-
S
ource Voltage (V)
* V
GS
> minimum V
GS
at which R
D
S
(on)
i
s s
pecified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
Square
W
ave Pulse D
u
r
ation (s)
Normalized Thermal Transient Impedance, Junction-to-Case
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5
VBL2157N
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 50 °C/W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
0.02
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
100
1000
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Note
•
The characteristics shown in the two graphs
– Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
– Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board – FR4, size 1″ x 1″ x 0.062″, double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
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VBL2157N
TO-263AB
A
B
(Dat
u
m A)
3
4
A
A
E
c2
H
L1
4
Ga
u
ge
plane
4
0° to
8
°
B
5
Detail A
Seating plane
D
H
L
C
C
A1
L3
L4
Detail “A”
1
2
3
L2
Rotated 90° CW
B
B
scale
8
:1
A
2 x
b
2
2 x
b
c
E
M
M
B
0.010
A
M
± 0.004
B
2 x e
Base
metal
5
D1
4
Plating
(c)
b
1,
b
3
5
c1
(
b
,
b
2)
Lead tip
4
E1
Section B – B and C – C
Scale: none
V
ie
w
A – A
MILLIMETERS
INCHES
MILLIMETERS
INCHES
DIM.
A
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.38
MAX.
4.83
0.25
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
MIN.
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.330
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
DIM.
D1
E
MIN.
6.86
MAX.
MIN.
MAX.
–
10.67
–
0.270
0.380
0.245
–
0.420
–
A1
b
9.65
6.22
E1
e
b1
b2
b3
c
2.54 BSC
0.100 BSC
H
14.61
15.88
2.79
1.65
1.78
0.575
0.625
0.110
0.066
0.070
L
1.78
0.070
L1
L2
L3
L4
–
–
–
–
c1
c2
D
0.25 BSC
0.010 BSC
4.78
5.28
0.188
0.208
ECN: S-82110-Rev. A, 15-Sep-08
D
W
G: 5970
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.
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7
VBL2157N
Disclaimer
All products due to improve reliability, function or design or for other reasons, product specifications and
data are subject to change without notice.
Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their
representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
product.(www.VBsemi.com)
Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of
any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
T
aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
including a particular purpose, non-infringement and merchantability guarantee.
Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
T
aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
Unless expressly stated in writing,
T
aiwan VBsemi products are not intended for use in medical, life saving,
or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal
injury or death, use or sale of products used in
T
aiwan VBsemi such applications using client did not express their
own risk. Contact your authorized
T
aiwan VBsemi people who are related to product design applications and
other terms and conditions in writing.
The information provided in this document and the company’s products without a license, express or implied,
by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product
names and trademarks referred to herein are trademarks of their respective representatives will be all.
Material Category Policy
Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be
oHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) – modification, unless otherwise specified as inconsistent.(www.VBsemi.com)
Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
2011/65 /.
Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as
halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products
conform to confirm compliance with IEC 61249-2-21 standard level JS709A.
