VBsemi-Elec-VBM1158N
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VBM1158N
N-Channel 150 V (D-S)
MOSFET
FEATURES
• TrenchFET
®
power MOSFET
PRODUCT SUMMARY
V
DS
(V)
150
0.075
20
• Package with low thermal resistance
• 100 % R
g
and UIS tested
R
DS(on)
(
Ω
) at V
GS
= 10 V
I
D
(A)
Configuration
Package
Single
TO-220
TO-220AB
D
G
S
N-Channel MOSFET
S
D
G
Top View
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
DS
150
V
V
GS
20
T
C
= 25 °C
20
Continuous Drain Current
I
D
T
C
= 125 °C
14
Continuous Source Current (Diode Conduction)
a
Pulsed Drain Current
b
I
S
50
A
I
DM
I
AS
E
AS
60
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
30
45
L = 0.1 mH
mJ
W
T
C
= 25 °C
107
Maximum Power Dissipation
b
P
D
T
C
= 125 °C
35
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to +175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
R
thJA
LIMIT
50
UNIT
Junction-to-Ambient
PCB Mount
c
°C/W
Junction-to-Case (Drain)
R
thJC
1.4
Notes
a. Package
limited.
b. Pulse
test; pulse width
≤
300 μs, duty cycle
≤
2 %.
c. When
mounted on 1″ square PCB (FR4 material).
d. Parametric
verification ongoing.
服务热线：400-655-8788
1
VBM1158N
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
150
–
–
V
1.5
–
–
3.5
V
DS
= 0 V, V
GS
V
GS
= 0 V
V
DS
= 150 V
GS
= 0 V
=
20 V
–
100
1
nA
μA
A
–
–
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
I
D(on)
R
DS(on)
g
fs
V
V
DS
= 150 V, T
J
= 125 °C
V
DS
= 150 V, T
J
= 175 °C
V
DS
≥
5 V
–
–
–
50
250
–
V
GS
= 0 V
–
V
GS
= 10 V
30
–
–
V
GS
= 10 V
I
D
= 12 A
0.075
0.116
0.158
33
–
–
–
Drain-Source On-State Resistance
a
V
GS
= 10 V
V
GS
= 10 V
I
D
= 12 A, T
J
= 125 °C
I
D
= 12 A, T
J
= 175 °C
–
Ω
–
Forward Transconductance
b
Dynamic
b
V
DS
= 12 V, I
D
= 15 A
–
–
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
–
–
–
1090
165
82
1660
200
V
GS
= 0 V
V
DS
= 25 V, f = 1 MHz
pF
120
–
–
27
7.5
50
–
Q
gs
Q
gd
R
g
V
GS
= 10 V
V
DS
= 75 V, I
D
= 20 A
f = 1 MHz
nC
–
10.2
1.0
11
–
0.35
3.2
17
33
30
20
Ω
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
21
V
DD
= 75 V, R
L
= 3
Ω
ns
I
D
≅
20A, V
GEN
= 10 V, R
g
= 1
Ω
20
12
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
–
–
–
65
A
V
Forward Voltage
V
SD
I
F
= 20 A, V
GS
= 0 V
0.85
1.5
Notes
a. Pulse
test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed
by design, not subject to production testing.
c. Independent
of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
VBM1158N
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
50
40
30
20
10
0
50
40
30
20
10
0
V
GS
= 10 V thru 5V
V
GS
= 4V
T
C
= 25
°
C
V
GS
= 3
T
C
= – 55
°
C
T
C
= 125
°
C
0
2
4
6
8
10
0
2
4
6
8
10
V
GS
–
G
ate-to-
S
ource Voltage (V)
V
D
S
– Drain-to-
S
ource Voltage (V)
Output Characteristics
Transfer Characteristics
10
8
60
48
36
24
12
0
T
C
= – 55
°
C
T
C
= 25
°
C
6
T
C
= 125
°
C
T
C
= 25
°
C
4
2
T
C
= – 55
°
C
T
C
= 125
°
C
0
0
5
10
15
20
25
0
2
4
6
8
10
V
GS
–
G
ate-to-
S
ource Voltage (V)
I
D
– Drain Current (A)
Transfer Characteristics
Transconductance
0.15
0.12
0.09
0.06
0.03
0.00
3000
2500
2000
1500
1000
500
V
= 10 V
C
i
ss
C
o
ss
C
r
ss
0
0
10
20
30
40
50
0
15
30
45
60
75
I
D
– Drain Current (A)
V
D
S
– Drain-to-
S
ource Voltage (V)
On-Resistance vs. Drain Current
Capacitance
服务热线：400-655-8788
3
VBM1158N
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
10
8
3.0
2.5
2.0
1.5
1.0
0.5
I
D
= 12 A
I
D
= 20A
D
S
= 75 V
V
6
V
GS
= 10 V
4
2
0
– 50
– 25
0
25
50
75 100
125 150 175
0
8
16
24
32
40
Q
g
– Total
G
ate Charge (nC)
T
J
– Junction Temperature (
°
C)
Gate Charge
On-Resistance vs. Junction Temperature
0.25
0.20
0.15
0.10
0.05
0.00
100
10
T
J
= 150
°
C
1
T
J
= 150
°
C
0.1
T
J
= 25
°
C
0.01
0.001
T
J
= 25
°
C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
S
D
–
S
ource-to-Drain Voltage (V)
V
GS
–
G
ate-to-
S
ource Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.0
0.4
200
190
180
170
160
150
I
D
= 10 mA
– 0.2
– 0.8
– 1.4
– 2.0
I
D
= 5 mA
I
D
= 250 μA
– 50
– 25
0
25
50
75 100
125 150 175
– 50
– 25
0
25
50
75 100
125 150 175
T
J
– Junction
T
e
mperature (°C)
T
J
– Temperature (
°
C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
服务热线：400-655-8788
4
VBM1158N
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
1000
I
DM
Limited
100
100 μ
s
1 m
s
Limited by R
D
S
(on)
*
10
1
10 m
s
100 m
s
, 1
s
, 10
s
, DC
BVD
SS
Limited
0.1
0.01
T
C
= 25
°
C
S
ingle Pul
s
e
0.01
0.1
1
10
100
1000
V
D
S
– Drain-to-
S
ource Voltage (V)
* V
GS
> minimum V
GS
at which R
D
S
(on)
i
s s
pecified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
服务热线：400-655-8788
5
VBM1158N
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
2
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P
u
lse
0.01
-4
-3
-2
-1
10
10
10
S
qu
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
Note
•
The characteristics shown in the two graphs
– Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
– Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board – FR4, size 1″ x 1″ x 0.062″, double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
服务热线：400-655-8788
6
TO-220AB
MILLIMETERS
MIN.
INCHES
A
E
DIM.
MAX.
4.65
1.01
1.73
0.61
15.49
12.70
10.51
2.67
5.28
1.40
6.48
2.92
14.02
3.82
3.94
3.00
MIN.
MAX.
0.183
0.040
0.068
0.024
0.610
0.500
0.414
0.105
0.208
0.055
0.255
0.115
0.552
0.150
0.155
0.118
F
A
b
4.25
0.69
1.20
0.36
14.85
12.19
10.04
2.41
4.88
1.14
6.09
2.41
13.35
3.32
3.54
2.60
0.167
0.027
0.047
0.014
0.585
0.480
0.395
0.095
0.192
0.045
0.240
0.095
0.526
0.131
0.139
0.102
Ø P
b(1)
c
D
D2
E
e
e(1)
F
1
3
2
H(1)
J(1)
L
*
M
L(1)
Ø P
Q
b(1)
ECN: T14-0413-Rev. P, 16-Jun-14
DWG: 5471
Note
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
C
b
e
J(1)
e(1)
D2
服务热线：400-655-8788
7
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data are subject to change without notice.
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representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
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any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
T
aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
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Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
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product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
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aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
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RoHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
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