VBsemi-Elec-VBM1403
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VBM1403
N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V
DS
•
•
TrenchFET
®
Powe
r
M
OSFET
40
V
3
R
DS(on)
V
GS
= 10 V
I
D
100 % R
g
and UIS Tested
m
A
RoHS
160
COMPLIANT
APPLICATIONS
Configuration
Single
•
•
Synchronous Rectification
Power Supplies
TO-220AB
D
G
S
G D S
N-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
40
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
± 20
160
a, c
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
140
c
29
b
Continuous Drain Current (T
J
= 175 °C)
I
D
A
23
b
350
80
I
DM
I
AS
Pulsed Drain Current
Avalanche Current Pulse
Single Pulse Avalanche Energy
L = 0.1 mH
E
AS
320
mJ
A
110
a, c
2.6
b
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
I
S
Continuous Source-Drain Diode Current
312
a
200
P
D
Maximum Power Dissipation
W
3.13
b
2.0
b
T
J
, T
stg
Operating Junction and Storage Temperature Range
– 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
b
Steady State
Steady State
32
40
R
thJA
°C/W
R
thJC
Maximum Junction-to-Case
0.33
0.4
Notes:
a.
Based on T
C
= 2
5
°
C.
b.
Surface Mounted on 1″ x 1″ FR4 board.
c.
Calculated based on maximum junction temperature. Package limitation current is 110 A.
服务热线：400-655-8788
1
VBM1403
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
Δ
V
DS
/T
J
Δ
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
40
V
41
– 8
mV/°C
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 40 V, V
GS
= 0 V
V
2.0
4.0
± 100
1
I
GSS
nA
I
DSS
I
D(on)
R
DS(on)
g
fs
Zero Gate Voltage Drain Current
On-State Drain Current
a
µA
A
V
DS
= 40 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 10 V
10
120
V
GS
= 10 V, I
D
= 30 A
3
Drain-Source On-State Resistance
a
m
V
GS
= 4.5 V, I
D
= 20 A
15
Forward Transconductance
a
Dynamic
b
V
DS
= 15 V, I
D
= 30 A
180
S
C
iss
C
oss
C
rss
Q
g
Input Capacitance
5500
650
450
120
30
V
DS
= 20 V, V
GS
= 0 V, f = 1 MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Total Gate Charge
Q
gs
Q
gd
R
g
V
DS
= 20 V, V
GS
= 10 V, I
D
= 20 A
f = 1 MHz
Gate-Source Charge
Gate-Drain Charge
nC
16
Gate Resistance
0.85
20
1.3
30
Ω
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
11
17
V
DD
= 20 V, R
L
= 1.0
Ω
I
D
20 A, V
GEN
= 10 V, R
g
= 1
Ω
Turn-Off Delay Time
77
115
15
Fall Time
10
ns
Turn-On Delay Time
102
62
155
95
Rise Time
V
DD
= 20 V, R
L
= 1.0
Ω
I
D
20 A, V
GEN
= 4.5 V, R
g
= 1
Ω
Turn-Off Delay Time
180
60
270
90
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
I
S
= 20 A
110
200
1.2
75
A
0.8
50
70
30
20
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
105
I
F
= 20 A, di/dt = 100 A/µs, T
J
= 25 °C
ns
t
b
Notes:
a.
Pulse test; pulse width
300 µs, duty cycle
2 %.
b.
Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
VBM1403
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
250
5
4
3
2
1
0
V
GS
= 10 thru 7 V
200
150
T
C
= 125 °C
T
C
= 25 °C
V
GS
=6 V
100
V
GS
=4 V
50
T
C
= – 55 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
0
2
4
6
8
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
400
320
240
160
80
0.006
0.005
0.004
0.002
0.001
T
C
= – 55 °C
T
C
= 25 °C
T
C
= 125 °C
V
GS
= 10 V
0.0000
0
0
140
150
160
170
180
190
0
15
30
45
60
75
90
I
D
– Drain Current (A)
I
D
– Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
24000
16000
8000
0
10
8
I
D
= 20 A
C
iss
V
DS
= 20 V
6
V
DS
= 10 V
V
DS
= 30 V
4
2
C
oss
C
rss
0
0
10
20
30
40
0
30
60
90
120
150
V
DS
– Drain-to-Source Voltage (V)
Q
g
– Total Gate Charge (nC)
Capacitance
Gate Charge
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3
VBM1403
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2.0
100
I
D
= 30 A
1.7
10
1
V
GS
= 10 V
T
J
= 150 °C
T
J
= 25 °C
1.4
V
GS
= 6.5 V
1.1
0.1
0.01
0.8
0.5
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
– 50
– 25
0
25
50
75
100 125
150
V
SD
– Source-to-Drain Voltage (V)
T
J
– Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Forward Diode Voltage vs. Temperature
0.6
0.2
0.010
0.008
0.006
0.004
0.002
0.000
– 0.2
– 0.6
– 1.0
I
D
= 5 mA
T
J
= 150 °C
T
J
= 25 °C
I
D
= 250 µA
– 50
– 25
0
25
50
75
100 125 150
0
2
4
6
8
10
T
J
– Temperature (°C)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
1000
Limited by R
DS(on)
*
10 µs
100 µs
100
10
1 ms
10 ms
100 ms, DC
1
0.1
T
C
= 25 °C
Single Pulse
BVDSS
0.01
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
* V
GS
> minimum
V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
服务热线：400-655-8788
4
VBM1403
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
350
400
350
300
250
200
150
100
50
280
210
140
70
0
Package Limited
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
J
– Junction to Case (°C)
T
J
– Junction to Case (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Single Pulse
0.01
10
-1
1
10
-4
10
-3
10
-2
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
服务热线：400-655-8788
5
VBM1403
TO-220AB
MILLIMETERS
MIN.
INCHES
A
E
DIM.
MAX.
4.65
1.01
1.73
0.61
15.49
10.51
2.67
5.28
1.40
6.48
2.92
14.02
3.82
3.94
3.00
MIN.
MAX.
0.183
0.040
0.068
0.024
0.610
0.414
0.105
0.208
0.055
0.255
0.115
0.552
0.150
0.155
0.118
F
A
b
4.25
0.69
1.20
0.36
14.85
10.04
2.41
4.88
1.14
6.09
2.41
13.35
3.32
3.54
2.60
0.167
0.027
0.047
0.014
0.585
0.395
0.095
0.192
0.045
0.240
0.095
0.526
0.131
0.139
0.102
Ø P
b(1)
c
D
E
e
e(1)
F
H(1)
J(1)
L
1
3
2
L(1)
Ø P
Q
*
M
b(1)
ECN: X12-0208-Rev. N, 08-Oct-12
DWG: 5471
Notes
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
C
b
e
J(1)
e(1)
服务热线：400-655-8788
6
VBM1403
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