VBsemi-Elec-VBM1615
| Part # | VBsemi-Elec-VBM1615 |
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VBM1615
N-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
175 °C Junction Temperature
I
D
(A)
a
60
V
DS
(V)
R
DS(on)
(
)
TrenchFET
®
Power MOSFET
0.011 at V
GS
= 10 V
0.013 at V
GS
= 4.5 V
Material categorization:
60
50
D
TO-220AB
G
S
D
S
G
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
C
Parameter
Symbol
Limit
± 20
60
Unit
V
GS
Gate-Source Voltage
V
T
C
= 25 °C
Continuous Drain Current (T
J
= 175 °C)
b
I
D
50
a
T
C
= 100 °C
I
DM
I
S
Pulsed Drain Current
200
A
50
a
50
Continuous Source Current (Diode Conduction)
Avalanche Current
I
AS
E
AS
Single Avalanche Energy (Duty Cycle
1 %)
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
125
136
mJ
W
P
D
Maximum Power Dissipation
3
b
, 8.3
b, c
T
J
, T
stg
Operating Junction and Storage Temperature Range
– 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
10 sec
15
40
18
50
Maximum Junction-to-Ambient
a
R
thJA
Steady State
°C/W
R
thJC
Maximum Junction-to-Case
0.85
1.1
Notes:
a.
Package limited.
b.
Surface mounted on 1″ x 1″ FR4 board.
c.
t
10 s.
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1
VBM1615
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Typ.
a
Parameter
Static
Symbol
Test Conditions
Min.
Max.
Unit
V
DS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
60
1
V
3
± 100
1
V
DS
= 0 V, V
GS
= ± 20 V
nA
V
DS
= 60 V, V
GS
= 0 V
I
DSS
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175 °C
V
DS
= 5 V, V
GS
= 10 V
Zero Gate Voltage Drain Current
On-State Drain Current
b
50
µA
A
250
I
D(on)
60
V
GS
= 10 V, I
D
= 20 A
0.011
0.014
0.018
0.013
60
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 °C
V
GS
= 10 V, I
D
= 20 A, T
J
= 175 °C
V
GS
= 4.5 V, I
D
= 15 A
Drain-Source On-State Resistance
b
R
DS(on)
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 20 A
S
Dynamic
C
iss
C
oss
C
rss
Q
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
4200
570
325
47
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
V
DS
= 30 V, V
GS
= 10 V, I
D
= 50 A
pF
nC
Q
gs
Q
gd
t
d(on)
t
r
10
12
10
20
25
50
30
V
DD
= 30 V, R
L
= 0.6
15
ns
I
D
50 A, V
GEN
= 10 V, R
g
= 2.5
Turn-Off Delay Time
c
Fall Time
c
t
d(off)
t
f
35
20
Source-Drain Diode Ratings and Characteristics
(T
C
= 25 °C)
I
SM
V
SD
t
rr
A
V
Pulsed Current
60
1.5
100
I
F
= 20 A, V
GS
= 0 V
Diode Forward Voltage
Reverse Recovery Time
1
I
F
= 20 A, di/dt = 100 A/µs
45
ns
Notes:
a.
For design aid only; not subject to production testing.
b.
Pulse test; pulse width
300 µs, duty cycle
2 %.
c.
Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
VBM1615
TYPICAL CHARACTERISTICS
(25 °C unless noted)
100
80
60
40
20
0
200
V
GS
= 10 thru 5 V
160
4 V
120
80
T
C
= 125 °C
25 °C
40
2 V, 3 V
– 55 °C
0
0
1
2
3
4
5
0
2
4
6
8
10
V
GS
– Gate-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
120
100
80
60
40
20
0
0.020
0.016
0.012
0.008
0.004
0.000
T
C
= – 55 °C
25 °C
125 °C
V
GS
= 10 V
0
20
40
60
80
100
0
10
20
30
40
50
I
D
– Drain Current (A)
I
D
– Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
10
4800
4200
3600
3000
2400
V
DS
= 30 V
I
D
= 50 A
8
6
4
C
iss
1800
1200
2
0
C
oss
600
0
C
rss
0
10
20
30
40
50
0
10
20
30
40
50
60
V
DS
– Drain-to-Source Voltage (V)
Q
g
– Total Gate Charge (nC)
Capacitance
Gate Charge
服务热线：400-655-8788
3
VBM1615
TYPICAL CHARACTERISTICS
(25 °C unless noted)
100
2.5
V
GS
= 10 V
I
D
= 20 A
2.0
1.5
1.0
0.5
0.0
T
J
= 150 °C
T
J
= 25 °C
10
1
– 50
– 25
0
25
50
75 100 125 150
175
0
0.3
0.6
0.9
1.2
1.5
T
J
– Junction Temperature (°C)
V
SD
– Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
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4
VBM1615
THERMAL RATINGS
1000
100
60
Limited by
R
DS(on)
*
50
40
30
20
10
0
10 µs
100 µs
10
1
1 ms
10 ms
100 ms
DC
T
C
= 25 °C
Singl
e
P
ulse
0.1
0.01
0.1
1
10
100
0
25
50
75
100
125
150
175
V
DS
– Drain-to-Source Voltage (V)
T
A
– Ambient Temperature (°C)
*
V
GS
> minimum V
GS
at which R
DS(on)
i
s
s
pecified
Maximum Drain Current vs. Ambient Temperature
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–
4
–
3
10
–
2
–
1
10
10
10
Square Wave Pulse Duration (s)
1
10
100
Normalized Thermal Transient Impedance, Junction-to-Case
服务热线：400-655-8788
5
VBM1615
TO-220AB
MILLIMETERS
MIN.
INCHES
MIN.
MAX.
A
DIM.
E
MAX.
4.65
1.02
1.78
0.61
15.85
10.52
2.67
5.28
1.40
6.71
2.92
14.40
4.04
3.94
3.00
F
A
b
4.24
0.69
1.14
0.36
14.33
9.96
2.41
4.88
1.14
6.10
2.41
13.36
3.33
3.53
2.54
0.167
0.027
0.045
0.014
0.564
0.392
0.095
0.192
0.045
0.240
0.095
0.526
0.131
0.139
0.100
0.183
0.040
0.070
0.024
0.624
0.414
0.105
0.208
0.055
0.264
0.115
0.567
0.159
0.155
0.118
Ø P
b(1)
c
D
E
e
e(1)
F
H(1)
J(1)
L
1
3
2
L(1)
Ø P
Q
*
M
b(1)
ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031
Note
•
M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
C
b
e
J(1)
e(1)
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6
VBM1615
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