VBsemi-Elec-VBN1405
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VBN1405
N-Channel 40-V (D-S) 175
°
C MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
TrenchFET
®
Power MOSFET
I
D
(A)
Q
g
(Typ.)
V
(BR)DSS
(V)
r
DS(on)
(
)
175
°
C Junctio
n
T
emperature
RoHS
0.00
44
at V
GS
= 10 V
40
95
110
COMPLIANT
High Threshold Voltage at High Temperature
D
TO-262
G
S
S
S
D
N-Channe
l
M
OSFET
ABSOLUTE MAXIMUM RATINGS
T =
25
°
C, unless otherwis
e
n
oted
C
Parameter
Symbol
Limit
40
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
20
T
C
= 25
°
C
110
70
Continuous Drain Current (T
J
= 175
°
C)
I
D
T
C
= 125
°
C
A
I
DM
I
AR
Pulsed Drain Current
Avalanche Current
300
50
Repetitive Avalanche Energy
a
E
AR
L = 0.1 mH
125
mJ
W
150
b
3.75
T
C
= 25
°
C
Maximum Power Dissipation
a
P
D
T
A
= 25
°
C
c
T
J
, T
stg
Operating Junction and Storage Temperature Range
– 55 to 175
°
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
R
thJA
Limit
40
Unit
Junction-to-Ambient
Junction-to-Case
PCB Mount
c
°
C/W
R
thJC
1
Notes:
a. Duty cycle
1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1″ square PCB (FR-4 material).
服务热线：400-655-8788
1
VBN1405
SPECIFICATIONS
T =
25
°
C, unless otherwis
e
n
oted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
= 0 V
,
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
(BR)DSS
V
GS(th)
I
GSS
Drain-Source Breakdown Voltage
40
V
Gate-Threshold Voltage
Gate-Body Leakage
3.4
3.8
5.0
±
100
1
V
DS
= 0 V, V
GS
=
±
20 V
nA
V
DS
= 40 V, V
GS
= 0 V
V
DS
= 40 V, V
GS
= 0 V, T
J
= 125
°
C
V
DS
= 40 V, V
GS
= 0 V, T
J
= 175
°
C
V
DS
= 5 V, V
GS
= 10 V
50
I
DSS
Zero Gate Voltage Drain Current
On-State Drain Current
a
µA
A
250
I
D(on)
120
20
V
GS
= 10 V, I
D
= 30 A
0.0044
0.008
0.0106
50
Drain-Source On-State Resistance
a
Forward Transconductance
a
V
GS
= 10 V, I
D
= 30 A, T
J
= 125
°
C
V
GS
= 10 V, I
D
= 30 A, T
J
= 175
°
C
V
DS
= 15 V, I
D
= 15 A
r
DS(on)
g
fs
S
Dynamic
b
C
iss
C
oss
C
rss
Q
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
6700
600
320
95
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
pF
Total Gate Charge
c
Gate-Source Charge
c
Q
gs
Q
gd
R
g
V
DS
= 20 V, V
GS
= 10 V, I
D
= 50 A
f = 1.0 MHz
37
nC
Gate-Drain Charge
c
Gate Resistance
21
1.7
20
Turn-On Delay Time
c
Rise Time
c
t
d(on)
t
r
t
d(off)
t
f
30
145
75
95
V
DD
= 20 V, R
L
= 0.4
I
D
50 A, V
GEN
= 10 V, R
g
= 2.5
ns
Turn-Off Delay Time
c
Fall Time
c
50
12
20
Source-Drain Diode Ratings and Characteristics
T
C
= 25
°
C
b
I
S
I
SM
V
SD
t
rr
Continuous Current
Pulsed Current
100
300
1.50
60
A
Forward Voltage
a
I
F
= 30 A, V
GS
= 0 V
0.90
40
V
I
F
= 30 A, di/dt = 100 A/µs
Reverse Recovery Time
ns
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
服务热线：400-655-8788
2
VBN1405
TYPICAL CHARACTERISTICS
25
°
C, unless otherwise noted
250
250
200
150
100
50
V
GS
= 10 thru
8
V
200
7 V
150
100
6 V
T
C
= 12
5
°
C
25
°
C
50
5 V
– 5
5
°
C
0
0
0
2
4
6
8
10
0
1
2
3
4
5
6
7
8
V
GS
– Gate-to-Source Voltag
e
(
V)
V
DS
– Drain-to-Source Voltag
e
(
V)
Transfer Characteristics
Output Characteristics
160
140
120
100
80
0.010
0.008
0.006
0.004
0.002
0.000
T
C
= – 55
°
C
25
°
C
125
°
C
V
GS
= 10 V
60
40
20
0
0
10
20
30
40
50
60
0
20
40
60
80
100
I
D
– Drain Current (A)
I
D
– Drain Curren
t
(
A)
Transconductance
On-Resistance vs. Drain Current
8400
6300
4200
2100
0
20
16
12
8
C
iss
V
DS
= 2
0
V
I
D
= 50 A
4
C
oss
C
rss
0
0
5
10
15
20
25
30
35
40
0
40
80
120
160
200
V
DS
– Drain-to-Source Voltag
e
(
V)
Q
g
– Total Gate Charge (nC)
Capacitance
Gate Charge
服务热线：400-655-8788
3
VBN1405
25
°
C, unless otherwise noted
TYPICAL CHARACTERISTICS
2.0
100
10
1
V
GS
= 10 V
I
D
= 30 A
1.7
1.4
1.1
0.8
0.5
T
J
= 15
0
°
C
T
J
= 2
5
°
C
– 50
– 25
0
25
50
75 100 125 150
175
0
0.3
0.6
0.9
1.2
T
J
– Junction Temperature (
°
C)
V
SD
– Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Junction Temperature
1000
100
54
51
48
45
42
I
D
=
1
m
A
I
AV
(A) at T
J
= 25
°
C
10
1
I
AV
(A) at T
J
= 150
°
C
0.1
– 50
– 25
0
25
50
75 100 125 150
175
0.00001
0.0001
0.001
0.01
t
in
(s)
0.1
1
T
J
– Junction Temperatur
e
(
°
C)
Avalanche Current vs. Time
Drain Source Breakdown vs.
Junction Temperature
服务热线：400-655-8788
4
VBN1405
THERMAL RATINGS
1000
125
10 µs
100
10
100
75
50
25
0
100 µs
Limited
by r
DS(on)
1 ms
*
10 ms, 100 ms, DC
1
0.1
T
C
= 2
5
°
C
Singl
e
P
ulse
0.01
0.001
0.1
1
10
100
0
25
50
75
100
125
150
175
V
DS
– Drain-to-Source Voltage (V)
T
A
– Ambient Temperature (
°
C)
minimum V
GS
at which r
DS(on)
is specified
* V
GS
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
Square Wave Pulse Duratio
n
(
s)
10
-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
服务热线：400-655-8788
5
VBN1405
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aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
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