VBsemi-Elec-VBQA1303
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VBQA1303
N-Channel 30 V (D-S) MOSFET
FEATURES
•
TrenchFET
®
Power MOSFET
PRODUCT SUMMARY
D
(A)
a, e
120
•
100 % R
g
and UIS Tested
V
DS
(V)
R
DS(on)
(
)
Q
g
(Typ.)
I
0.00
3
at V
GS
= 10 V
0.00
5
at V
GS
= 4.5 V
APPLICATIONS
30
71
nC
90
•
Notebook PC Core
•
VRM/POL
D
DFN5X6
Top View
Top View
Bottom View
1
8
2
3
7
6
G
4
5
PIN1
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
30
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
± 20
120
a, e
9
0
e
T
C
= 25 °C
C
= 70 °C
T
Continuous Drain Current (T
J
= 175 °C)
I
D
21
b, c
T
A
= 25 °C
T
A
= 70 °C
A
2
0
.8
b, c
I
DM
I
AS
Pulsed Drain Current
250
Avalanche Current Pulse
Single Pulse Avalanche Energy
5
6
L = 0.1 mH
T
C
= 25 °C
E
AS
60
mJ
A
8
0
a, e
I
S
Continuous Source-Drain Diode Current
T
T
T
T
A
= 25 °C
C
= 25 °C
C
= 70 °C
A
= 25 °C
76
b, c
2
1
0
a
1
5
5
P
D
Maximum Power Dissipation
W
3
5
b, c
1
3
b, c
T
A
= 70 °C
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
b, d
R
thJA
t
10 s
41
5
0
°C/W
R
thJC
Maximum Junction-to-Case
Steady State
0.
7
0.
9
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1″ x 1″ FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 90 °C/W.
e. Calculated based on maximum junction temperature. Package limitation current is
8
0 A.
服务热线：400-655-8788
1
VBQA1303
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min .
Typ.
Max.
Unit
Static
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0
V
,
I
D
= 250 µA
I
D
= 250 µA
Drain-Source Breakdown Voltage
30
V
V
DS
T
e
mperature Coefficient
35
mV/°C
V
GS(th)
T
e
mperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
–
5
.5
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0
V
,
V
GS
= ± 20 V
V
DS
= 30
V
,
V
GS
= 0 V
DS
= 30
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
5
V
,
V
GS
= 10 V
V
GS
= 10
V
,
I
D
= 32 A
1.0
2.5
± 100
1
V
I
GSS
nA
I
DSS
I
D(on)
R
DS(on)
g
fs
Zero Gate Voltage Drain Current
On-State Drain Current
a
µA
A
V
10
8
0
0.00
3
0.00
5
1
3
0
Drain-Source On-State Resistance
a
S
V
GS
= 4.5
V
,
I
D
= 29 A
V
DS
= 15
V
,
I
D
= 32 A
Forward
T
r
ansconductance
a
Dynamic
b
C
iss
C
oss
C
rss
Input Capacitance
3200
1
0
25
970
71
V
, V
GS
= 0
V
, f = 1
M
Hz
D
S
= 12.5 V
Output Capacitance
Reverse
T
r
ansfer Capacitance
pF
V
DS
= 15
V
,
V
GS
= 10
V
,
I
D
= 32 A
V
DS
= 15
V
,
V
GS
= 4.5
V
,
I
D
= 29 A
f = 1 MHz
Q
g
T
o
tal Gate Charge
6
1.5
34
nC
Q
gs
Q
gd
R
g
Gate-Source Charge
Gate-Drain Charge
29
Gate Resistance
1.4
18
11
70
10
55
180
55
12
2.1
27
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-On Delay Time
Rise Time
17
V
DD
= 15
V
,
R
L
= 0.555
I
D
27 A, V
GEN
= 10
V
,
R
g
= 1
T
u
rn-Off Delay Time
105
15
Fall Time
ns
T
u
rn-On Delay Time
83
Rise Time
270
83
V
DD
= 15
V
,
R
L
= 0.625
I
D
24 A, V
GEN
= 4.5
V
,
R
g
= 1
T
u
rn-Off Delay Time
Fall Time
18
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
I
S
= 22 A
80
A
1
00
1.2
78
0.8
52
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
70.2
27
105
I
F
= 20 A, di/dt = 100 A/µs, T
J
= 25 °C
ns
t
b
25
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
VBQA1303
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
3.0
2.4
1.
8
1.2
0.6
0.0
100
75
60
45
30
15
0
V
= 10 thr
u
4
V
GS
T
= 125 °C
C
– 55 °C
T
= 25 °C
2
C
V
GS
= 3
V
V
GS
= 2
V
0.0
0.5
1.0
1.5
2.0
2.5
0
1
3
4
V
– Gate-to-So
u
rce
V
oltage (
V
)
GS
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
Output Characteristics
Transfer Characteristics
0.01
2
0.01
0
0.00
8
0.00
6
0.00
4
0.00
2
0.000
600
500
400
300
200
100
0
T
= 25 °C
C
T
= 125 °C
C
V
= 4.5V
GS
T
= – 55 °C
C
V
GS
= 10 V
13
0
12
0
9
0
11
0
– Drain
C
u
rrent (A)
10
0
8
0
0
0
0
10
20
30
40
50
60
70
8
0
90
I
I
D
– Drain
C
u
rrent (A)
D
R
DS(on)
vs. Drain Current
Transconductance
10
8
3
0
00
2
000
I
D
= 32 A
C
iss
V
DS
= 15
V
6
1
500
1000
5
00
0
C
oss
V
DS
= 24
V
4
2
C
rss
0
0
30
60
90
120
150
1
8
0
0
6
12
1
8
24
30
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
Q
g
–
T
o
tal
Gate Charge (nC)
Capacitance
Gate Charge
服务热线：400-655-8788
3
VBQA1303
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
1.6
1.4
1.2
1.0
0.
8
0.6
V
V
= 10
V
, I
= 32
A
D
= 4.5
V
, I
= 29.
8
A
D
GS
GS
10
T
= 150 °C
J
1
T
= 25 °C
J
0.1
0.01
0.001
0
0.2
0.4
0.6
0.
8
1
– 50
– 25
0
25
50
75 100
125 150 175
V
SD
– So
u
rce-to-Drain
V
oltage (
V
)
T –
J
u
nction
T
e
mperat
u
re (°C)
J
On-Resistance vs. Junction Temperature
Forward Diode Voltage vs. Temperature
0.004
0.003
0.002
0.001
0.000
2.
8
2.4
2.0
1.6
1.2
0.
8
I
= 32 A
D
T
A
= 125 °C
I
D
= 250
µ
A
T
= 25 °C
A
0
2
4
6
8
10
– 50
– 25
0
25
50
75 100
125 150 175
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
T
J
–
T
e
mperat
u
re (°C)
R
DS(on)
vs. V
GS
vs. Temperature
Threshold Voltage
1000
Limited by r
*
DS(on)
100
100 µs
1 ms
10
1
10 ms
100 ms
1 s
10 s
DC
0.1
BVDSS Limited
10
0.01
0.001
T
= 25 °C
A
Single Pulse
0.1
1
100
V
– Drain-to-Source
Voltage (V)
DS
*V
GS
minimum V
at which r
is specified
GS
DS(on)
Safe Operating Area, Junction-to-Ambient
服务热线：400-655-8788
4
VBQA1303
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
300
250
200
150
100
50
300
250
200
150
100
Package Limited
50
0
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
T
C
– Case
T
e
mperat
u
re (°C)
T
C
– Case
T
e
mperat
u
re (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–
4
–
3
10
–
2
10
–
1
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
服务热线：400-655-8788
5
VBQA1303
Disclaimer
All products due to improve reliability, function or design or for other reasons, product specifications and
data are subject to change without notice.
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representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
product.(www.VBsemi.com)
Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of
any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
T
aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
including a particular purpose, non-infringement and merchantability guarantee.
Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
T
aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
Unless expressly stated in writing,
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aiwan VBsemi products are not intended for use in medical, life saving,
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aiwan VBsemi such applications using client did not express their
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aiwan VBsemi people who are related to product design applications and
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RoHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
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Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
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7
