VBsemi-Elec-VBQF2120
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VBQF2120
P-Channel 12 V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free according to IEC 61249-2-21
I
D
(A)
a
–
2
5
V
DS
(V)
R
DS(on)
(
)
Q
g
(Typ.)
Definition
•
•
TrenchFET
®
Power MOSFET
0.0
15
at V
GS
= – 4.5 V
0.0
21
at V
GS
= – 2.5 V
0.0
2
3 at V
GS
= – 1.8 V
Ultra Small
DFN
3
x
3
C
hipscale
Packaging Reduces Footprint Area,
Profile (0.62 mm) and On-Resistance Per
Footprint Area
– 12
–
2
4
35 nC
–
2
4
•
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
•
•
•
PA Switch
Pin Description
Battery Switch
Load Switch
T
o
p View
Bottom View
S
D
D
D
D
Top View
G
G
S
S
1
8
7
6
5
S
2
3
DFN3x3-8(punc
h
t
ype)
4
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
– 12
± 8
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
–
2
5
–
1
9
Continuous Drain Current (T
J
= 150 °C)
I
D
–
2
0
b, c
A
–
1
1
b, c
–
8
0
I
DM
I
S
Pulsed Drain Current
T
C
= 25 °C
T
A
= 25 °C
–
2
6
.7
Continuous Source-Drain Diode Current
–
3
.5
b, c
3
7
T
C
= 25 °C
T
C
= 70 °C
A
= 25 °C
26
P
D
Maximum Power Dissipation
W
3
.9
b, c
T
1.
9
6
b, c
T
A
= 70 °C
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
Package Reflow Conditions
d
– 55 to 150
°C
IR/Convection
260
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1″ x 1″ FR4 board.
c. t = 10 s.
d. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering.
e. In this document, any reference to the
Case
represents the body of the
DFN2X2
device and
Foot
is the bump.
1
VBQF2120
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
3
1
Maximum
Unit
Maximum Junction-to-Ambient
a, b
Maximum Junction-to-Foot (Drain)
R
thJA
4
2
°C/W
R
thJF
Steady State
1
3
16
Notes:
a. Surface mounted on 1″ x 1″ FR4 board.
b. Maximum under steady state conditions is 72 °C/W.
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0
V
,
I
D
= – 250 µA
I
D
= – 250 µA
Drain-Source Breakdown Voltage
– 12
V
V
DS
T
e
mperature Coefficient
– 13.3
2.4
mV/°C
V
GS(th)
T
e
mperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
= V
GS
, I
D
= – 250 µA
V
DS
= 0
V
,
V
GS
= 5 V
– 0.
5
– 1.5
– 100
– 1
V
I
GSS
nA
V
DS
= – 12
V
,
V
GS
= 0 V
DS
= – 12
V
,
V
GS
= 0
V
,
T
J
= 70 °C
V
DS
5
V
,
V
GS
= – 4.5 V
V
GS
= – 4.5
V
,
I
D
= – 1 A
I
DSS
Zero Gate Voltage Drain Current
On-State Drain Current
a
µA
A
V
– 10
I
D(on)
– 20
0.015
0.0
21
0.02
3
8.3
Drain-Source On-State Resistance
a
Forward
T
r
ansconductance
a
R
DS(on)
V
V
GS
= – 2.5
V
,
I
D
= – 1 A
GS
= – 1.8
V
,
I
D
= – 1 A
g
fs
V
DS
= – 4
V
,
I
D
= – 1 A
S
Dynamic
b
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
2220
865
555
38
V
DS
= – 6
V
,
V
GS
= 0
V
, f = 1
M
Hz
pF
V
DS
= – 6
V
,
V
GS
= – 5
V
,
I
D
= – 1 A
V
DS
= – 6
V
,
V
GS
= – 4.5
V
,
I
D
= – 1 A
V
GS
= – 0.1
V
, f = 1
M
Hz
57
53
Q
g
T
o
tal Gate Charge
35
nC
Q
gs
Q
gd
R
g
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
T
u
rn-On Delay Time
Rise Time
7.3
5.9
28
t
d(on)
t
r
t
d(off)
t
f
14
21
40
25
V
DD
= – 6
V
,
R
L
= 4
ns
I
D
– 1 A, V
GEN
= – 4.5
V
,
R
g
= 6
T
u
rn-Off Delay Time
Fall Time
380
240
570
360
2
VBQF2120
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
–
8
A
– 2
5
– 0.65
311
I
S
= – 1 A, V
GS
= 0 V
Body Diode Voltage
– 1.2
467
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
ns
µC
Q
rr
t
a
1.136
116
1.705
I
F
= – 1 A, dI/dt = 100 A/µs, T
J
= 25 °C
ns
t
b
Reverse Recovery Rise Time
195
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
3
VBQF2120
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
1
2
10
5
10.0
7.5
5.0
2.5
0.0
V
GS
= 5 V thru 2
V
V
GS
= 1.5 V
T
= 125 °C
C
T
C
= 25 °C
V
GS
= 1 V
T
C
= – 55 °C
0
0.0
0.5
1.0
1.5
2.0
0.0
0.5
1.0
1.5
2.0
V
DS
– Drain-to-Source
V
o
ltage (V)
V
GS
– Gate-to-Source
V
o
ltage (V)
Output Characteristics
Transfer Characteristics
0.06
0.05
0.04
0.03
0.02
0.01
3000
2000
1000
0
C
iss
V
= 1.8 V
= 2.5 V
GS
C
oss
V
GS
C
rss
V
= 4.5 V
GS
0
5
10
– Drain Current (A)
15
20
0
3
6
9
12
I
D
V
– Drain-to-Source
V
o
ltage (V)
DS
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.6
1.4
1.2
1.0
0.8
0.6
5
I
D
= 1
A
I
D
= 1
A
V
GS
= 4.5 V, 2.5 V
4
3
2
1
0
V
DS
= 6 V
V
GS
= 1.8 V
V
DS
= 9.6 V
– 50
– 25
0
25
50
75
100 125 150
0
5
10
Q
15
20
25
30
35
40
–
T
o
tal Gate Charge (nC)
T –
Junction
T
e
mperature
(
°
C)
g
J
Gate Charge
On-Resistance vs. Junction Temperature
4
VBQF2120
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.05
0.04
0.03
0.02
0.01
10
I
D
= 1
A
1
0.1
T
J
= 125 °C
T
A
= 125 °C
T
J
= 25 °C
0.01
T
A
= 25 °C
0.001
0
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
V
GS
– Gate-to-Source
V
o
ltage (V)
V
SD
– Source-to-Drain
V
o
ltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.8
0.7
0.6
0.5
0.4
0.3
0.2
60
50
I
D
= 250
µA
40
30
20
10
0
– 50
– 25
0
25
50
75
100 125 150
0.01
0.001
0.1
1
10
T
J
–
T
e
mperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
IDM limited
Limited by R
DS(on)
*
I
limited
D(on)
10 ms
10
100 ms
1 s
1
10 s
DC
0.1
T
A
= 25 °C
Single Pulse
0.01
BVDSS limited
0.001
0.1
1
10
100
V
DS
– Drain-to-Source
V
o
ltage (V)
* V
GS
> minimum V
at which R
is specified
GS
DS(on)
Safe Operating Area, Junction-to-Ambient
5
VBQF2120
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
8
7
6
5
4
3
2
1
0
16
12
8
4
0
0
25
50
75
100
125
150
25
50
75
100
125
150
T
C
– Case Temperature (°C)
T
F
– Foot Temperature
(
°
C)
Current Derating*
Power Derating
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 72 °C/W
thJA
(t)
3. T
– T
= P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
6
VBQF2120
Disclaimer
All products due to improve reliability, function or design or for other reasons, product specifications and
data are subject to change without notice.
Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their
representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of
any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
T
aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
including a particular purpose, non-infringement and merchantability guarantee.
Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
T
aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
Unless expressly stated in writing,
T
aiwan VBsemi products are not intended for use in medical, life saving,
or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal
injury or death, use or sale of products used in
T
aiwan VBsemi such applications using client did not express their
own risk. Contact your authorized
T
aiwan VBsemi people who are related to product design applications and
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Material Category Policy
Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be
RoHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) – modification, unless otherwise specified as
inconsistent.(www.VBsemi.com)
Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
2011/65 /.
Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as
halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products
conform to confirm compliance with IEC 61249-2-21 standard level JS709A.
