VBsemi-Elec-VBTA2245N
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VBTA2245N
P-Channel 20 V (D-S) MOSFET
FEATURES
• TrenchFET
®
power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(
Ω
)
I
D
(A)
-0.55
-0.50
-0.38
Q
g
(TYP.) (nC)
• 100 % R
tested
0.450 at V
GS
= -4.5 V
0.500 at V
GS
= -2.5 V
0.600 at V
GS
= -1.8 V
• Fast switching speed
-20
1
APPLICATIONS
• Load / power switch for portable
devices
S
• Drivers: relays, solenoids, displays
• Battery operated systems
3
2
1
G
S
1
2
G
SC−75 / SOT−416
3
D
D
T
o
p View
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
-20
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
V
GS
12
T
A
= 25 °C
T
A
= 70 °C
-0.55
b, c
-0.45
b, c
-1.8
Continuous Drain Current (T
J
= 150 °C)
I
D
A
Pulsed Drain Current (t = 300 μs)
I
DM
I
S
Continuous Source-Drain Diode Current
T
A
= 25 °C
T
A
= 25 °C
T
A
= 70 °C
-0.16
b, c
0.19
b, c
0.12
b, c
-55 to +150
Maximum Power Dissipation
P
D
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
440
MAXIMUM
530
UNIT
t
≤
5 s
Maximum Junction-to-Ambient
a, b
R
thJA
°C/W
Steady State
540
650
Notes
a. Maximum
under steady state conditions is 650 °C/W.
b. Surface
mounted on 1″ x 1″ FR4 board.
c. t
= 5 s.
服务热线：400-655-8788
1
VBTA2245N
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0, I
D
= -250 μA
I
D
= -250 μA
-20
–
–
–
V
mV/°C
V
V
DS
Temperature Coefficient
Δ
V
DS
/T
J
Δ
V
GS(th)
/T
J
V
GS(th)
–
-12
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
–
1.8
–
V
DS
= V
GS
, I
D
= -250 μA
-0.4
–
-1
30
1
V
DS
= 0 V, V
GS
DS
= 0 V, V
GS
=
8 V
–
–
Gate-Source Leakage
I
GSS
V
=
4.5 V
–
–
μA
V
DS
= -20 V, V
GS
= 0 V
V
DS
= -20 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
=
≥
5 V, V
GS
= -4.5 V
V
GS
= -4.5 V, I
D
= -0.4 A
V
GS
= -2.5 V, I
D
= -0.2 A
V
GS
= -1.8 V, I
D
= -0.1 A
V
DS
= -10 V, I
D
= 0.4 A
–
–
-1
-10
–
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
–
–
I
D(on)
-1.5
–
A
Ω
S
–
–
–
–
0.450
0.500
0.600
1
–
Drain-Source On-State Resistance
a
R
DS(on)
–
–
Forward Transconductance
Dynamic
b
g
fs
–
Input Capacitance
C
iss
C
oss
C
rss
–
–
45
15
10
1.65
1
–
–
Output Capacitance
Reverse Transfer Capacitance
V
DS
= -10 V, V
GS
= 0 V, f = 1 MHz
DS
= -10 V, V
GS
= -4.5 V, I
D
= -0.4 A
pF
–
–
V
–
2.50
2
Total Gate Charge
Q
g
–
nC
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
gs
Q
gd
R
g
V
DS
= -0 V, V
GS
= -2.5 V, I
D
= -0.4
f = 1 MHz
–
0.2
0.26
12
9
–
–
–
2.4
–
24
18
20
20
16
2
Ω
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
–
10
10
8
V
DD
= -10 V, R
L
= 33.3
Ω
I
D
≅
-0.3 A, V
GEN
= -4.5 V, R
g
= 1
Ω
Turn-Off DelayTime
Fall Time
–
–
ns
Turn-On Delay Time
Rise Time
–
1
–
8
16
18
10
V
DD
= -10 V, R
L
= 33.3
Ω
I
D
≅
-0.3 A, V
GEN
= -8 V, R
g
= 1
Ω
Turn-Off DelayTime
Fall Time
–
9
–
5
Drain-Source Body Diode Characteristics
Pulse Diode Forward Current
a
Body Diode Voltage
I
SM
V
SD
t
rr
–
–
–
–
–
–
–
-0.8
16
8
-1.5
-1.2
24
16
–
A
V
I
S
= -0.3 A
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
ns
nC
Q
rr
t
a
I
F
= -0.3 A, dI/dt = 100 A/μs
11
5
ns
Reverse Recovery Rise Time
t
b
–
Notes
a. Pulse
test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed
by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
VBTA2245N
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
-4
0.010
0.008
0.006
0.004
0.002
0.000
10
-5
10
-6
10
-7
10
-8
T
J
= 150
°
C
T
J
= 25
°
C
T
J
= 25
°
C
0
3
6
9
12
0
3
6
9
12
15
V
GS
–
G
ate-to-
S
ource Voltage (V)
V
GS
–
G
ate-
S
ource Voltage (V)
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
1.5
0.8
0.6
0.4
0.2
0
V
GS
= 5 V thru 3 V
V
GS
= 2.5 V
1.2
0.9
0.6
0.3
0
V
GS
= 2 V
T
C
= 25 °C
V
GS
= 1.5 V
T
C
= 125 °C
T
C
= – 55 °C
1.6
0
0.5
1
1.5
2
0
0.4
0.8
1.2
2
V
D
S
– Drain-to-
S
ource Voltage (V)
V
GS
–
G
ate-to-
S
ource Voltage (V)
Output Characteristics
Transfer Characteristics
2
90
72
54
36
18
0
V
GS
= 1.8 V
1.5
V
GS
= 2.5 V
C
i
ss
1
0.5
0
V
GS
= 4.5 V
C
o
ss
C
r
ss
0
5
10
15
20
0
0.3
0.6
0.9
1.2
1.5
V
D
S
– Drain-to-
S
ource Voltage (V)
I
D
– Drain Current (A)
On-Resistance vs. Drain Current
服务热线：400-655-8788
Capacitance
3
VBTA2245N
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
8
6
4
2
0
1.5
1.3
1.1
0.9
0.7
I
D
= 0.35 A
V
GS
= 2.5 V
I
D
= 0.4 A
V
D
S
= 5 V
V
GS
= 4.5 V
V
D
S
= 10 V
V
D
S
= 16 V
0
0.45
0.9
1.35
1.8
– 50
– 25
0
25
50
75
100 125 150
T
J
– Junction Temperature (
°
C)
Q
g
– Total
G
ate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
10
1.2
1.0
0.8
0.6
0.4
I
D
= 0.35 A
T
J
= 150
°
C
T
J
= 125 °C
T
J
= 25 °C
1
T
J
= 25
°
C
0.1
0.0
0.3
0.6
0.9
1.2
1.5
1
2
3
4
5
6
7
8
V
GS
–
G
ate-to-
S
ource Voltage (V)
V
S
D
–
S
ource-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.7
0.6
0.5
0.4
0.3
10
8
6
I
D
= 250 μA
4
2
0
– 50
– 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
Time (
s
)
T
J
– Temperature (
°
C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
服务热线：400-655-8788
4
VBTA2245N
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
0.25
0.20
0.15
0.10
0.05
0
Limited by R
D
S
(on)
*
BVD
SS
Limited
100 μ
s
1
1 m
s
10 m
s
0.1
100 m
s
T
A
= 25
°
C
S
ingle Pul
s
e
1
s
10
s
, DC
0.01
0.1
1
10
V
D
S
– Drain-to-
S
ource Voltage (V)
* V
GS
> minimum V
GS
at which R
D
S
(on)
i
s s
pecified
100
0
25
50
75
100
125
150
T
A
– Ambient Temperature (
°
C)
Safe Operating Area, Junction-to-Ambient
Power Derating, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
S
ingle Pul
s
e
0.001
0.01
0.0001
0.01
0.1
1
10
100
1000
Sq
uare Wave Pul
s
e Duration (
s
)
Normalized Thermal Transient Impedance, Junction-to-Ambient
服务热线：400-655-8788
5
VBTA2245N
SC-75: 3 Leads
L2
D
b b b
1
2
D
e2
2X
D
3
B1(b1)
e1
3
3
E/2
1
2
E
E1
1
1
1
2
b b b
C
2X
bbb
C
2X
3
4
e3
B1
b1
2XB1
M
ddd
C
A –
B
D
With Tin Planting
Base Metal
c1
5
Section B-B
b b b
C
4X
Seating Plane
D
DWG: 5868
Notes
MILLIMETERS
DIM.
NOTE
Dimensions in millimeters will govern.
MIN.
–
NOM.
MAX.
0.80
0.10
0.80
0.24
0.21
0.15
0.12
1.68
1.70
0.86
1.Dimension D does not include mold flash, protrusions or gate
burrs. Mold flash protrusions or gate burrs shall not exceed
0.10 mm per end. Dimension E1 does not include Interlead flash
or protrusion. Interlead flash or protrusion shall not exceed
0.10 mm per side.
2.Dimensions D and E1 are determined at the outmost extremes of
the plastic body exclusive of mold flash, tie bar burrs, gate burrs
and interlead flash, but including any mismatch between the top
and bottom of the plastic body.
3.Datums A, B and D to be determined 0.10 mm from the lead tip.
4.Terminal positions are shown for reference only.
5.These dimensions apply to the flat section of the lead between
0.08 mm and 0.15 mm from the lead tip.
A
A1
A2
B1
b1
c
–
0.00
0.65
0.19
0.17
0.13
0.10
1.48
1.50
0.66
–
0.70
–
5
–
–
5
5
c1
D
–
1.575
1.60
1, 2
E
E1
e1
e2
e3
L
0.76
1, 2
DIMENSIONS
TOLERANCES
0.50 BSC
1.00 BSC
0.50 BSC
0.205
0.40 ref.
0.15 BSC
–
aaa
bbb
ccc
ddd
0.10
0.10
0.10
0.10
0.15
0.30
L1
L2
q
0°
4°
8°
q1
–
10°
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6
VBTA2245N
RECOMMENDED MINIMUM PADS FOR SC-75: 3-Lead
0.014
(0.356)
0.264
(0.660)
0.054
(1.372)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
服务热线：400-655-8788
7
VBTA2245N
Disclaimer
All products due to improve reliability, function or design or for other reasons, product specifications and
data are subject to change without notice.
Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their
representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
product.(www.VBsemi.com)
Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of
any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
T
aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
including a particular purpose, non-infringement and merchantability guarantee.
Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
T
aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
Unless expressly stated in writing,
T
aiwan VBsemi products are not intended for use in medical, life saving,
or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal
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T
aiwan VBsemi such applications using client did not express their
own risk. Contact your authorized
T
aiwan VBsemi people who are related to product design applications and
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Material Category Policy
Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be
oHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) – modification, unless otherwise specified as inconsistent.(www.VBsemi.com)
Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
2011/65 /.
Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as
halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products
conform to confirm compliance with IEC 61249-2-21 standard level JS709A.
