VBsemi-Elec-VBZC8205A
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VBZC8205A
Dual N-Channel 25-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free Option Available
TrenchFET
®
Power MOSFETs
V
DS
(V)
R
DS(on)
(
Ω
)
I
D
(A)
6.6
P
b
-free
•
0.022 at V
GS
= 4.5 V
0.032 at V
GS
= 2.5 V
A
v
aila
b
le
25
RoHS*
5.5
COMPLIANT
D
D
TSSOP-8
D
D
1
2
3
4
8
7
6
5
S
1
S
1
1
S
2
S
2
G1
G2
G
G
2
S1
S2
Top View
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
A
Parameter
Symbol
10 s
Steady State
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
25
V
V
GS
± 12
T
A
= 25 °C
T
A
= 70 °C
6.6
5.5
5.2
3.5
Continuous Drain Current (T
J
= 150 °C)
a
I
D
A
I
DM
I
S
Pulsed Drain Current
30
Continuous Source Current (Diode Conduction)
a
1.5
1.5
1.0
1.0
T
A
= 25 °C
T
A
= 70 °C
Maximum Power Dissipation
a
P
D
W
0.96
0.64
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typ.
72
Max.
83
Unit
t
≤
10 s
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
R
thJA
Steady State
Steady State
100
55
120
70
°C/W
R
thJF
Notes:
a. Surface Mounted on FR4 board, t
≤
10 s.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
服务热线：400-655-8788
1
VBZC8205A
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
a
Max.
Unit
Static
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0
V
,
V
GS
= ± 4.5 V
V
DS
= 25
V
,
V
GS
= 0 V
DS
= 25
V
,
V
GS
= 0
V
,
T
J
= 70 °C
V
DS
≤
5
V
,
V
GS
= 4.5 V
V
GS
=
4.5
V
,
I
D
= 6.5 A
V
GS
= 2.5
V
,
I
D
= 5.5 A
V
DS
= 10
V
,
I
D
= 6.5 A
I
S
= 1.5 A, V
GS
= 0 V
Gate Threshold Voltage
0.5
1.0
± 200
1
V
Gate-Body Leakage
nA
I
DSS
I
D(on)
Zero Gate Voltage Drain Current
µA
A
V
25
On-State Drain Current
b
30
0.022
0.032
30
Drain-Source On-State Resistance
b
R
DS(on)
Ω
Forward
T
r
ansconductance
b
Diode Forward Voltage
b
g
fs
S
V
V
SD
0.71
1.2
18
Dynamic
a
Q
g
Q
gs
Q
gd
t
d(on)
t
r
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
T
u
rn-On Delay Time
Rise Time
12
V
DS
= 10
V
,
V
GS
= 4.5
V
,
I
D
= 6.5 A
2.2
nC
ns
3.6
245
330
860
510
365
495
V
DD
= 10
V
,
R
L
= 10
Ω
I
D
≅
1 A, V
GEN
= 4.5
V
,
R
G
= 6
Ω
t
d(off)
t
f
T
u
rn-Off Delay Time
Fall Time
1300
765
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
10000
1000
8
100
6
10
T
= 150 °C
J
4
2
0
1
T
= 25 °C
J
0.1
0.01
0
3
6
9
12
15
0
3
6
9
12
15
18
V
GS
– Gate-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Gate-Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
服务热线：400-655-8788
2
VBZC8205A
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
30
30
25
20
15
10
5
V
= 5 thru 3 V
GS
2.5 V
25
20
15
10
5
T
= 125 °C
C
2 V
4
25 °C
– 55 °C
0
0
0
1
2
3
5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
5
4
3
2
1
0
0.07
0.06
0.05
0.04
0.03
0.02
V
= 10 V
= 6.5 A
DS
I
D
V
GS
= 2.5 V
V
GS
= 4.5 V
0
3
6
9
12
15
0
5
10
D
15
20
25
30
Q
– Total Gate Charge (nC)
I
– Drain
Current (A)
g
On-Resistance vs. Drain Current
Gate Charge
1.6
1.4
1.2
1.0
0.8
0.6
40
10
V
= 4.5 V
= 6.5 A
GS
I
D
T
= 150 °C
J
T
= 25 °C
J
1
0.1
– 50
– 25
0
25
50
75
100 125 150
0
0.3
V
0.6
0.9
1.2
1.5
T
– Junction Temperature (°C)
– Source-to-Drain Voltage (V)
J
SD
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
服务热线：400-655-8788
3
VBZC8205A
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.05
0.4
0.2
I
D
= 250 µA
0.04
0.03
0.0
I
D
= 6.5 A
0.02
0.01
0.00
– 0.2
– 0.4
– 0.6
0
1
2
3
4
5
6
– 50
– 25
0
25
50
75
100 125 150
V
GS
– Gate-to-Source Voltage (V)
T –
T
e
mperature (°C
)
J
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
100
200
160
Limited by R
DS(on)
*
10
1
1 ms
120
10 ms
80
40
100 ms
0.1
1 s
T
= 25 °C
C
10 s
DC
Single Pulse
0.01
0
0.001
0.01
0.1
1
10
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
Time (s)
* V
> minimum V
at which R
is specified
DS(on)
GS
GS
Single Pulse Power
Safe Operating Area, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
=
115 °C/W
thJA
(t)
– T
= P
Z
DM thJA
3. T
JM
A
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
服务热线：400-655-8788
4
VBZC8205A
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
服务热线：400-655-8788
5
VBZC8205A
TSSOP: 8ĆLEAD
JEDEC Part Number:
MO-153
MILLIMETERS
Dim
A
A
1
A
2
B
C
D
E
E
1
e
Min
–
Nom
–
Max
1.20
0.15
1.05
0.30
–
0.05
0.80
0.19
–
0.10
1.00
0.28
0.127
3.00
6.40
4.40
0.65
0.60
1.00
–
2.90
6.20
4.30
–
3.10
6.60
4.50
–
R 0.10
Corners)
D
e
0.45
0.90
–
0.75
1.10
0.10
6
_
E
L
L
1
Y
C
L
B
0
_
3
_
o
K1
R 0.10
o
K1
(4 Corners)
ECN: S-03946—Rev. G, 09-Jul-01
DWG: 5844
L1
服务热线：400-655-8788
6
VBZC8205A
RECOMMENDED MINIMUM
P
A
DS FOR TSSOP-8
0.092
(2.337)
0.026
(0.660)
0.014
0.012
(0.305)
(0.356)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
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7
VBZC8205A
Disclaimer
All products due to improve reliability, function or design or for other reasons, product specifications and
data are subject to change without notice.
Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their
representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
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any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
T
aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
including a particular purpose, non-infringement and merchantability guarantee.
Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
T
aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
Unless expressly stated in writing,
T
aiwan VBsemi products are not intended for use in medical, life saving,
or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal
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T
aiwan VBsemi such applications using client did not express their
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T
aiwan VBsemi people who are related to product design applications and
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Material Category Policy
Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be
RoHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) – modification, unless otherwise specified as
inconsistent.(www.VBsemi.com)
Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
2011/65 /.
Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as
halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products
conform to confirm compliance with IEC 61249-2-21 standard level JS709A.
