VBsemi-Elec-VBZE06N02
| Part # | VBsemi-Elec-VBZE06N02 |
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VBZE06N02
N-Channel 20-V (D-S)175
_
C MOSFET
FEATURES
PRODUCT SUMMARY
D
TrenchFET
r
Power MOSFET
D
175
_
C Maximum Junction
T
e
mperature
D
100% R
g
T
e
sted
V
DS
(V)
r
DS(on)
(
ꢀ
)
I
D
(A)
a
0.0
0
45
@ V
= 4.5 V
100
90
GS
20
0.0
06
@ V
= 2.5 V
GS
D
TO-252
G
Drain Connected to
T
a
b
G
D
S
Top View
S
N-Channel MOSFET
ABSOLUTE MAXIMUM R
A
T
INGS (T
= 25
_
C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
20
DS
GS
V
V
“
15
T
= 25
_
C
= 100
_
C
100
80
C
Continuous Drain Current
I
D
T
C
A
Pulsed Drain Current
I
200
65
DM
I
S
T
= 25
_
C
= 25
_
C
71
C
Maximum Power Dissipation
P
D
W
b,
c
8.3
T
A
Operating Junction and Storage
T
e
mperature Range
T , T
–
5
5 to 175
_
C
J
stg
THERMAL RESISTANCE R
A
T
INGS
Parameter
Symbol
Typical
Maximum
Unit
t
v
10 sec.
15
18
b
Maximum Junction-to-Ambient
R
thJA
R
thJC
Steady State
40
50
_
C/W
Maximum Junction-to-Case
1.75
2.1
Notes
a. Package
Limited
b. Surface
Mounted on 1” x 1” FR4 Board
c. t
v
10 sec
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1
VBZE06N02
SPECIFICATIONS (T
= 25
_
C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Max
Unit
Static
V
= 0
V
, I
=
2
50
ꢁ
A
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
20
GS
D
(BR)DSS
V
V
V
DS
= V
, I
= 250
ꢁ
A
0.5
1.5
“
100
1
GS(th)
GS
D
V
DS
= 0
V
, V
=
“
12 V
GS
I
nA
GSS
V
= 20
V
, V
= 0 V
GS
DS
Zero Gate Voltage Drain Current
I
ꢁ
A
DSS
V
V
= 20
V
, V
= 0 V, T
=
1
25
_
C
50
DS
GS
J
b
On-State Drain Current
I
V
DS
= 5
V
, V
=
4
.5 V
A
100
D(on)
GS
V
= 4.5
V
, I
=
2
0 A
0.0045
0.0055
GS
D
b
= 4.5
V
, I
=
2
0 A, T
= 125
_
C
V
Drain-Source On-State Resistance
r
ꢀ
GS
D
J
DS(on)
= 2.5
V
, I
=
2
0 A
D
GS
0.006
b
Forward Transconductance
g
fs
V
DS
= 5
V
, I
=
4
0 A
20
S
D
Input Capacitance
C
C
3660
730
375
26
iss
V
GS
= 0
V
, V
=
2
0
V
, f = 1
M
Hz
DS
Output Capacitance
pF
oss
Reverse Transfer Capacitance
C
rss
T
o
tal Gate Charge
Q
35
g
Gate-Source Charge
Q
Q
5
V
DS
= 10
V
,
V =
4
.5
V
, I
=
4
0 A
nC
gs
gd
GS
D
Gate-Drain Charge
7
Gate Resistance
R
1
3.7
35
ꢀ
g
Turn-On Delay Time
t
20
120
45
d(on)
Rise Time
t
r
190
70
V
= 10
V
, R
=
0
.25
ꢀ
L
GEN G
DD
ns
I
D
^
40 A, V
= 4.5
V
, R
=
2
.5
ꢀ
Turn-Off Delay Time
t
d(off)
Fall Time
t
f
20
35
Source-Drain Diode Ratings and Characteristic (T
C
= 25
_
C)
Pulsed Current
I
100
1.5
70
A
V
SM
Diode Forward Voltage
V
SD
I
F
= 100 A, V
= 0 V
1.2
35
GS
Source-Drain Reverse Recovery Time
t
rr
I
F
= 40 A, di/dt = 100 A/
ꢁ
s
ns
Notes
a. Guaranteed
by design, not subject to production testing.
b. Pulse
test; pulse width
v
300
ꢁ
s, duty cycle
v
2%.
c. Independent
of operating temperature.
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2
VBZE06N02
TYPICAL CHARACTERISTICS (25
_
C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
100
100
80
60
40
20
0
V
GS
= 4.5 thru 3 V
80
60
40
20
0
2.5 V
2 V
T
= 125
_
C
C
25
_
C
–
5
5
_
C
1 V
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
DS
– Drain-to-Source
Voltage (V)
V
GS
– Gate-to-Source
Voltage (V)
Transconductance
On-Resistance vs. Drain Current
120
100
80
60
40
20
0
0.012
0.009
0.006
0.003
0.000
T
=
–
5
5
_
C
C
25
_
C
V
=
4
.5 V
GS
125
_
C
V
GS
= 4.5 V
1
2
0
0
20
40
60
80
100
0
8
0
9
0
1
1
0
10
0
V
GS
– Gate-to-Source Voltage (V)
I
D
– Drain
Current (A)
Gate Charge
Capacitance
5000
4000
3000
2000
1000
0
12
9
V
D
= 10 V
GS
I
= 40 A
C
iss
6
C
oss
3
C
rss
0
0
4
8
12
16
20
0
10
20
g
30
40
50
60
70
V
– Drain-to-Source
Voltage (V)
Q
–
T
o
tal
Gate Charge (nC)
DS
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3
VBZE06N02
TYPICAL CHARACTERISTICS (25
_
C UNLESS NOTED)
On-Resistanc
e
v
s. Junction Temperature
Source-Drain Diode Forward Voltage
2.0
100
V
D
= 4.5 V
GS
I
= 20 A
1.6
1.2
0.8
0.4
0.0
T =
150
_
C
J
T =
25
_
C
J
10
1
–
5
0
–
2
5
0
25
50
75 100
125 150 175
0
0.3
V
0.6
0.9
1.2
1.5
T
– Junction
T
e
mperature (
_
C)
– Source-to-Drain
Voltage (V)
J
SD
THERMAL R
A
T
INGS
Maximum Avalanche Drain Current
vs. Case Temperature
Safe Operating Area
200
100
50
40
30
20
10
0
10
ꢁ
s
100
ꢁ
s
Limited
by r
DS(on)
10
1 ms
10 ms
100 ms
dc
T
= 25
_
C
C
Single Pulse
1
0.1
0
25
50
75
100
125
150
175
1
10
100
V
DS
– Drain-to-Source
Voltage (V)
T
– Case
T
e
mperature (
_
C)
C
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (sec)
10
100
600
1
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4
VBZE06N02
TO-252AA CASE OUTLINE
E
A
MILLIMETERS
INCHES
C2
b3
DIM.
A
MIN.
MAX.
2.38
0.127
0.88
1.14
5.46
0.61
0.89
6.22
–
MIN.
MAX.
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
–
2.18
–
0.086
–
A1
b
0.64
0.76
4.95
0.46
0.46
5.97
5.21
6.35
4.32
9.40
0.025
0.030
0.195
0.018
0.018
0.235
0.205
0.250
0.170
0.370
b2
b3
C
C2
D
D1
E
6.73
–
0.265
–
E1
H
b
C
b2
e
10.41
0.410
A1
e1
e
2.28 BSC
4.56 BSC
1.40
0.090 BSC
0.180 BSC
e1
L
1.78
1.27
1.02
1.52
0.055
0.070
0.050
0.040
0.060
L3
L4
L5
0.89
–
0.035
–
1.14
0.045
ECN:
X12-0247
-Rev. M, 24-Dec-12
DWG: 5347
E1
Note
Dimension L3 is for reference only.
•
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5
VBZE06N02
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T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
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o
t
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aiwan VBsemi
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aiwan demand that the Taiwan VBsemi of. Statement on whether the
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aiwan
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