VBsemi-Elec-VBZE100P03
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VBZE100P03
P-Channel 30 V (D-S)
MOSFET
FEATURES
PRODUCT SUMMARY
•
Compliant to RoHS Directive 2002/95/EC
V
DS
(V)
R
DS(on)
(
)
I
D
(A)
a
-1
00
–
90
A
v
aila
b
le
0.00
5
at V
GS
= – 10 V
0.0
0
7
at V
GS
= – 4.5 V
RoHS*
– 30
COMPLIANT
S
TO-252
G
D
G
S
D
Top View
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
C
Parameter
Symbol
Limit
Unit
Gate-Source Voltage
V
GS
± 20
V
–
1
00
a
T
C
= 25 °C
Continuous Drain Current (T
J
= 175 °C)
I
D
T
C
= 125 °C
– 90
A
Pulsed Drain Current
Avalanche Current
I
DM
I
AR
– 280
– 80
Repetitive Avalanche Energy
b
L = 0.1 mH
E
AR
180
187
d
mJ
W
T
C
= 25 °C (TO-220AB and TO-263)
T
A
= 25 °C (TO-263)
c
Power Dissipation
P
D
3.75
Operating Junction and Storage
T
e
mperature Range
T
J
, T
stg
– 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
R
thJA
Limit
40
Unit
PCB Mount (TO-263)
c
Free Air (TO-220AB)
Junction-to-Ambient
62.5
0.8
°C/W
Junction-to-Case
R
thJC
Notes:
a. Package limited.
b. Duty cycle
1 %.
c. When mounted on 1″ square PCB (FR-4 material).
d. See SOA curve for voltage derating.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
服务热线：400-655-8788
1
VBZE100P03
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0
V
,
I
D
= – 250 µA
V
DS
= V
GS
, I
D
= – 250 µA
– 30
– 1
V
– 3
± 100
– 1
V
DS
= 0
V
,
V
GS
= ± 20 V
nA
V
DS
= – 30
V
,
V
GS
= 0 V
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
V
DS
= – 30
V
,
V
GS
= 0
V
,
T
J
= 125 °C
V
DS
= – 30
V
,
V
GS
= 0
V
,
T
J
= 175 °C
V
DS
= –
5
V
,
V
GS
= – 10 V
– 50
µA
A
– 250
I
D(on)
– 120
V
GS
= – 10
V
,
I
D
= – 30 A
0.005
0.006
0.008
0.007
V
GS
= – 10
V
,
I
D
= – 30 A, T
J
= 125 °C
GS
= – 10
V
,
I
D
= – 30 A, T
J
= 175 °C
V
GS
= – 4.5
V
,
I
D
= – 20 A
Drain-Source On-State Resistance
a
R
DS(on)
V
Forward
T
r
ansconductance
a
Dynamic
b
g
fs
V
DS
= – 15
V
,
I
D
= – 75 A
20
S
Input Capacitance
Output Capacitance
Reversen
T
r
ansfer Capacitance
T
o
tal Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
T
u
rn-On Delay Time
c
Rise Time
c
C
iss
C
oss
C
rss
Q
g
8000
1565
715
160
32
V
GS
= 0
V
,
V
DS
= – 25
V
, f = 1
M
Hz
V
DS
= – 15
V
,
V
GS
= – 10
V
,
I
D
= – 75 A
pF
nC
240
Q
gs
Q
gd
t
d(on)
t
r
30
25
40
225
150
210
360
240
340
V
DD
= – 15
V
,
R
L
= 0.2
ns
T
u
rn-Off Delay Time
c
Fall Time
c
I
D
– 75 A, V
GEN
= – 10
V
,
R
g
= 2.5
t
d(off)
t
f
Source-Drain Diode Ratings and Characteristics
b
(T
C
= 25 °C)
Continuous Current
I
S
I
SM
–
80
– 240
– 1.5
100
5
A
Pulsed Current
Forward Voltage
a
V
SD
t
rr
I
F
= – 75 A, V
GS
= 0 V
– 1.2
55
V
ns
A
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
RM(REC)
Q
rr
I
F
= – 75 A, dI/dt = 100 A/µs
2.5
0.07
0.25
µC
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
VBZE100P03
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
200
160
120
80
250
T
= – 55 °C
C
V
GS
= 10 V thru 6 V
25 °C
200
150
100
50
125 °C
5 V
4 V
3 V
40
0
0
0
1
2
3
4
5
6
0
2
4
6
8
10
V
GS
– Gate-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.030
150
T
C
= – 55 °C
0.025
0.020
0.015
0.010
0.005
0
120
90
60
30
0
25 °C
125 °C
V
GS
= 4.5 V
V
GS
= 10 V
0
20
40
60
80
100
120
0
20
40
60
80
100
I
D
– Drain Current (A)
I
D
– Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
20
16
12
8
12 000
10 000
8000
6000
4000
2000
0
V
= 15 V
= 75 A
DS
C
iss
I
D
C
oss
4
C
rss
0
0
50
100
150
200
250
300
0
6
12
18
24
30
Q
g
–
T
o
tal Gate Charge (nC)
V
DS
– Drain-to-Source Voltage (V)
Capacitance
Gate Charge
服务热线：400-655-8788
3
VBZE100P03
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1.8
100
V
= 10 V
= 30 A
GS
I
D
1.5
1.2
0.9
0.6
0.3
0
T =
150 °C
J
10
T =
25 °C
J
1
– 50
– 25
0
25
50
75 100
125 150 175
0
0.2
0.4
0.6
0.8
1.0
T –
Junction
T
e
mperature (°C)
J
V
SD
– Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1000
100
45
40
35
30
25
I
D
= 250 µA
I
AV
(A) at T
= 25 °C
A
10
1
I
AV
(A) at T
= 150 °C
A
0.1
– 50
– 25
0
25
50
75 100
125 150 175
0.00001
0.0001
0.001
0.01
0.1
1
t
in
(s)
T
J
– Junction
T
e
mperature (°C)
Avalanche Current vs. Time
Drain Source Breakdown
vs. Junction Temperature
服务热线：400-655-8788
4
VBZE100P03
THERMAL RATINGS
1000
100
10
90
75
60
45
30
15
0
100 µs
1 ms
Limited
by R
*
DS(on)
10 ms
100 ms
DC
1
T
C
= 25 °C
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
V
– Drain-to-Source Voltage (V)
DS
T
– Case
T
e
mperature (°C)
C
* V
minimum V
at which R
is specified
DS(on)
GS
GS
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
– 3
– 2
– 1
– 4
10
10
10
1
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
服务热线：400-655-8788
5
VBZE100P03
TO-252AA CASE OUTLINE
E
A
MILLIMETERS
INCHES
C2
b3
DIM.
A
MIN.
MAX.
2.38
0.127
0.88
1.14
5.46
0.61
0.89
6.22
–
MIN.
MAX.
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
–
2.18
–
0.086
–
A1
b
0.64
0.76
4.95
0.46
0.46
5.97
5.21
6.35
4.32
9.40
0.025
0.030
0.195
0.018
0.018
0.235
0.205
0.250
0.170
0.370
b2
b3
C
C2
D
D1
E
6.73
–
0.265
–
E1
H
b
C
b2
e
10.41
0.410
A1
e1
e
2.28 BSC
4.56 BSC
1.40
0.090 BSC
0.180 BSC
e1
L
1.78
1.27
1.02
1.52
0.055
0.070
0.050
0.040
0.060
L3
L4
L5
0.89
–
0.035
–
1.14
0.045
ECN:
X12-0247
-Rev. M, 24-Dec-12
DWG: 5347
E1
Note
Dimension L3 is for reference only.
•
服务热线：400-655-8788
6
VBZE100P03
RECOMMENDED MINIMUM
P
A
DS FOR D
P
A
K (TO-252)
0.224
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
服务热线：400-655-8788
7
VBZE100P03
Disclaimer
All products due to improve reliability, function or design or for other reasons, product specifications and
data are subject to change without notice.
Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their
representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of
any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
T
aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
including a particular purpose, non-infringement and merchantability guarantee.
Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
T
aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
Unless expressly stated in writing,
T
aiwan VBsemi products are not intended for use in medical, life saving,
or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal
injury or death, use or sale of products used in
T
aiwan VBsemi such applications using client did not express their
own risk. Contact your authorized
T
aiwan VBsemi people who are related to product design applications and
other terms and conditions in writing.
The information provided in this document and the company’s products without a license, express or implied,
by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product
names and trademarks referred to herein are trademarks of their respective representatives will be all.
Material Category Policy
Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be
RoHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) – modification, unless otherwise specified as
inconsistent.(www.VBsemi.com)
Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
2011/65 /.
Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as
halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products
conform to confirm compliance with IEC 61249-2-21 standard level JS709A.
