VBsemi-Elec-VBZE2810
| Part # | VBsemi-Elec-VBZE2810 |
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N-Channel 80 V (D-S) MOSFET
FEATURES
• TrenchFET
®
Power MOSFET
PRODUCT SUMMARY
• 100 % R
g
and UIS Tested
V
DS
(V)
R
DS(on)
(
Ω
)
I
D
(A)
Q
g
(Typ.)
80
19 nC
0.006
at V
GS
= 10 V
1
0
0
APPLICATIONS
• Primary Side Switching
• Synchronous Rectification
• DC/AC Inverters
TO-252
D
• LED Backlighting
G
S
N-Channel MOSFET
D
S
G
Top View
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
80
Unit
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
V
GS
20
T
C
= 25 °C
1
0
0
90
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Continuous Drain Current (T
J
= 150 °C)
I
D
98
85
200
75
A
Pulsed Drain Current (t = 100 μs)
I
DM
I
S
T
C
= 25 °C
Continuous Source-Drain Diode Current
T
A
= 25 °C
4.5
30
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
I
AS
L = 0.1 mH
E
AS
45
mJ
W
T
T
C
= 25 °C
C
= 70 °C
230
180
Maximum Power Dissipation
P
D
200
150
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d, e
T
J
, T
stg
– 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, f
Symbol
R
thJA
Typical
20
Maximum
Unit
t
10 s
25
°C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
1.5
2.0
Notes
a. Package
limited.
b. Surface
mounted on 1″ x 1″ FR4 board.
c. t
= 10 s.
copper (not plated) as
a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework
conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum
under steady state conditions is 70 °C/W.
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1
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
80
V
V
DS
/T
J
V
GS(th)
/T
J
37
mV/°C
– 6.1
V
GS(th
)
V
DS
= V
GS
, I
D
= 250 μA
2.5
30
4.0
100
1
V
I
GSS
V
DS
= 0 V, V
GS
=
20 V
nA
V
DS
= 80 V, V
GS
= 0 V
V
DS
= 80 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 10 V
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
μA
A
10
I
D(on)
0.006
V
GS
= 10 V, I
D
= 20 A
Drain-Source On-State Resistance
a
R
DS(on)
g
fs
V
GS
=
4.5
V, I
D
= 10 A
0.015
Forward Transconductance
a
Dynamic
b
V
DS
= 10 V, I
D
= 20 A
60
S
Input Capacitance
C
iss
C
oss
C
rss
8100
950
76
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 40 V, V
GS
= 0 V, f = 1 MHz
pF
nC
19
15
11
7.3
86
2
V
DS
= 40 V,V
GS
= 10 V, I
D
= 10 A
V
DS
= 40 V, V
GS
= 6 V, I
D
= 10 A
Total Gate Charge
Q
g
Gate-Source Charge
Q
gs
Q
gd
Q
oss
R
g
V
DS
= 40 V,V
GS
= 4.5 V, I
D
= 10 A
Gate-Drain Charge
Output Charge
V
DS
= 40 V, V
GS
= 0 V
f = 1 MHz
57
Gate Resistance
0.5
Turn-On Delay Time
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
12
8
24
16
64
14
28
22
60
16
Rise Time
V
DD
= 40 V, R
L
= 4
I
D
10 A, V
GEN
= 10 V, R
g
= 1
Turn-Off DelayTime
32
7
Fall Time
ns
Turn-On Delay Time
14
11
30
8
Rise Time
V
DD
= 40 V, R
L
= 4
I
D
10 A, V
GEN
= 6.0 V, R
g
= 1
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current (t = 100 μs)
Body Diode Voltage
110
110
1.1
75
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
I
S
= 5 A
A
0.76
38
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
36
70
I
F
= 10 A, dI/dt = 100 A/μs, T
J
= 25 °C
19
ns
t
b
19
Notes
a. Pulse
test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed
by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
120
100
80
60
40
20
0
V
GS
= 10 V thru 6 V
80
V
GS
=5 V
60
40
T
C
= 25
°
C
20
T
C
= 125
°
C
V
GS
= 4 V
T
C
= – 55
°
C
V
GS
= 3 V
4.0
0
2
4
6
8
10
0.0
0.0
1.0
2.0
3.0
5.0
V
GS
–
G
ate-to-
S
ource Voltage (V)
V
D
S
– Drain-to-
S
ource Voltage (V)
Output Characteristics
Transfer Characteristics
3500
2800
2100
1400
700
0.020
0.010
V
GS
= 10 V
C
o
ss
0.0060
0.0050
0.0040
0.0010
C
i
ss
C
r
ss
0
0
60
80
90
0
12
24
36
48
60
1
00
1
1
0
V
D
S
– Drain-to-
S
ource Voltage (V)
I
D
– Drain Current (A)
Capacitance
On-Resistance vs. Drain Current
2.0
1.7
1.4
1.1
0.8
0.5
10
8
I
D
= 10 A
V
GS
= 10 V
I
D
= 20 A
V
D
S
= 40 V
6
V
D
S
= 20 V
V
GS
= 4.5 V
V
D
S
= 60 V
4
2
0
– 50
– 25
0
25
50
75
100
125
150
0
8
16
24
32
40
Q
g
– Total
G
ate Charge (nC)
T
J
– Junction Temperature (
°
C)
Gate Charge
On-Resistance vs. Junction Temperature
服务热线：400-655-8788
3
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.050
0.040
0.030
0.020
0.010
0.000
10
I
D
= 20 A
T
J
= 150
°
C
T
J
= 25 °C
1
0.1
T
J
= 125
°
C
0.01
0.001
T
J
= 25
°
C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
S
D
–
S
ource-to-Drain Voltage (V)
V
GS
–
G
ate-to-
S
ource Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
500
400
300
200
100
0
0.5
0.2
– 0.1
– 0.4
– 0.7
– 1.0
I
D
= 5 mA
I
D
= 250 μA
0.001
0.01
0.1
1
10
– 50
– 25
0
25
50
75
100 125 150
Time (
s
)
T
J
– Temperature (
°
C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
1000
I
DM
Limited
I
D
Limited
100
100 μ
s
1 m
s
10
1
10 m
s
Limited by R
D
S
(on)
*
100 m
s
0.1
1
s
T
A
= 25 °C
S
ingle Pul
s
e
10
s
DC
BVD
SS
Limited
0.01
0.01
0.1
1
10
100
V
D
S
– Drain-to-
S
ource Voltage (V)
* V
GS
> minimum V
GS
at which R
D
S
(on)
i
s s
pecified
Safe Operating Area, Junction-to-Ambient
服务热线：400-655-8788
4
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
75
60
Package Limited
45
30
15
0
0
25
50
75
100
125
150
T
C
– Ca
s
e Temperature (
°
C)
Current Derating*
2.5
2.0
1.5
1.0
0.5
75
60
45
30
15
0
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
– Ca
s
e Temperature (
°
C)
T
A
– Ambient Temperature (
°
C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases
where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
服务热线：400-655-8788
5
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
Note
s
:
0.1
0.1
P
DM
t
1
0.05
t
2
t
1
1. Duty Cycle, D =
t
2
2. Per Unit Ba
s
e = R
= 70 °C/W
thJA
0.02
(t)
3. T
– T
= P
JM
Z
A
DM thJA
S
ingle Pul
s
e
4.
S
urface Mounted
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Sq
uare Wave Pul
s
e Duration (
s
)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
S
ingle Pul
s
e
0.01
0.0001
0.001
0.01
0.1
1
Sq
uare Wave Pul
s
e Duration (
s
)
Normalized Thermal Transient Impedance, Junction-to-Case
服务热线：400-655-8788
6
VBZE2810
TO-252AA CASE OUTLINE
E
A
MILLIMETERS
INCHES
C2
b3
DIM.
A
MIN.
MAX.
2.38
0.127
0.88
1.14
5.46
0.61
0.89
6.22
–
MIN.
MAX.
2.18
–
0.086
–
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
–
A1
b
0.64
0.76
4.95
0.46
0.46
5.97
5.21
6.35
4.32
9.40
0.025
0.030
0.195
0.018
0.018
0.235
0.205
0.250
0.170
0.370
b2
b3
C
C2
D
D1
E
6.73
–
0.265
–
E1
H
b
C
b2
e
10.41
0.410
A1
e1
e
2.28 BSC
4.56 BSC
1.40
0.090 BSC
0.180 BSC
e1
L
1.78
1.27
1.02
1.52
0.055
0.070
0.050
0.040
0.060
L3
L4
L5
0.89
–
0.035
–
1.14
0.045
ECN:
X12-0247
-Rev. M, 24-Dec-12
DWG: 5347
E1
Note
Dimension L3 is for reference only.
•
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7
VBZE2810
RECOMMENDED MINIMUM
P
A
DS FOR D
P
A
K (TO-252)
0.224
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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8
VBZE2810
Disclaimer
All products due to improve reliability, function or design or for other reasons, product specifications and
data are subject to change without notice.
Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their
representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of
any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
T
aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
including a particular purpose, non-infringement and merchantability guarantee.
Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
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aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
Unless expressly stated in writing,
T
aiwan VBsemi products are not intended for use in medical, life saving,
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T
aiwan VBsemi such applications using client did not express their
own risk. Contact your authorized
T
aiwan VBsemi people who are related to product design applications and
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Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be
RoHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) – modification, unless otherwise specified as
inconsistent.(www.VBsemi.com)
Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
2011/65 /.
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halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
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